1. Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In2Se3.
- Author
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Wang, Rui-Qi, Lei, Tian-Min, and Fang, Yue-Wen
- Subjects
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MAGNETIC anisotropy , *GRAPHENE , *FERROELECTRIC materials , *MAGNETIC properties , *TRANSITION metals - Abstract
The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3d transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In2Se3, and the magnetocrystalline anisotropy energy (MAE) can be high to −0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3d TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by the second variation method. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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