16 results on '"Wang, I-Jung"'
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2. U-MRAM PUF: A Novel Unipolar-MRAM for Power and Area Efficient Hardware Root of Trust
3. Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing.
4. U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory
5. Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing
6. Structure and Performance Co-optimization for the Development of Highly Reliable Spin-Orbit Torque Magnetic Random Access Memory
7. A 4K–400K Wide Operating-Temperature-Range MRAM Technology with Ultrathin Composite Free Layer and Magnesium Spacer
8. The thermal stability improvement of spin-orbit-torque (SOT) devices with a thin PtMn insertion
9. Process-Induced Magnetic Tunnel Junction Damage and its Recovery for the Development of Spin-Orbit Torque Magnetic Random Access Memory
10. An 8kb spin-orbit-torque magnetic random-access memory
11. Challenges toward Low-Power SOT-MRAM
12. Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications
13. Low-environmental-interference & highly-sensitive TMR biosensor for in-vitro diagnosis application
14. Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With Manufacturing-Friendly 8-Inch Wafer-Level Uniformity
15. Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell
16. On the Hardware Implementation of MRAM Physically Unclonable Function
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