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Talent is one of the basic and strategic supports for building a modern socialist country in all aspects. Since the 1980s, the establishment of forensic medicine major and the cultivation of innovative talents in forensic medicine have become hot topics in higher education in forensic medicine. Over the past 43 years, the forensic medicine team of Shanxi Medical University has adhered to the joint education of public security and colleges, and made collaborative innovation, forming a training mode of “One Combination, Two Highlights, Three Combinations, Four in One” for innovative talents in forensic medicine. It has carried out “5+3/X” integrated reform, and formed a relatively complete talent training innovation mode and management system in teaching, scientific research, identification, major, discipline, team, platform and cultural construction. It has made a historic contribution to China’s higher forensic education, accumulated valuable experience for the construction of first-class major and first-class discipline of forensic medicine, and provided strong support for the construction of the national new forensic talent training system. The popularization of this training mode is conducive to the rapid and sustainable development of forensic science, and provides more excellent forensic talents for national building, regional social development and the discipline construction of forensic science.

Diamond Schottky barrier diodes (SBDs) could theoretically operate at high voltage, high temperature, and high frequency and be potentially used in power electronics. However, the device breaks down prematurely and cannot operate stably at high voltages due to the edge electric field crowding. In this work, a vertical diamond SBD with a curved field plate (CFP) was prepared using a chemical reflow method, inductively coupled plasma etching, and electron-beam evaporation. This structure alleviates the electric field crowding at the edge of the Schottky electrode and results in a breakdown voltage and current density of 380 V and over 3000 A/cm2, respectively. After repetitive measurements, we found that the device can repeatedly breakdown at around 380 V. These results indicate that CFP structure diamond SBDs have great application in high-voltage and high-power electronic devices. [ABSTRACT FROM AUTHOR]

In this work, the temperature dependence of diamond GeV centers that were formed by germanium (Ge) ion implantation and annealed in a hydrogen atmosphere at 1000 °C was investigated by photoluminescence spectroscopy. It was found that the intensity of the GeV centers had a thermal quenching effect with the increase in temperature, and the activation energy was fitted at 62.32 meV. Then, the laser power dependence was mainly dependent on radiative recombination so that the diamond GeV center intensity increased with the laser power. Furthermore, the electron-phonon coupling and thermal softening effect were found between Ge ions and vacancies chemical bonds, which made the GeV center peak position red shift with the increase of temperature. Finally, the FWHM of the diamond GeV center exhibited both homogeneous (Lorentzian component) and inhomogeneous broadening (Gaussian component) at 80–280 K, indicating that the Lorentzian component was dominant in the FWHM of the GeV center. [ABSTRACT FROM AUTHOR]

Normally Off diamond field-effect transistor (FET) is demanded for energy saving and safety for practical application. Metal/diamond Schottky junction serving as the gate is a simple and effective approach to deplete holes under the gate, whereas low Schottky barrier height (SBH) is undesirable. In this work, a dual-barrier Schottky gate hydrogen,oxygen-terminated diamond (H,O-diamond) FET (DBG-FET) with Al gate was realized. Normally Off DBG-FET with enhanced SBH and reduced leakage was achieved. H,O-diamond, which was defined by x-ray photoelectron spectroscopy (XPS) technique, was realized by ultraviolet ozone (UV/O3) treatment with nanoparticle-Al mask. The enlarged SBH of 0.94 eV owing to the C–O bond minimized the diode reverse current and nicely shut down the DBG-FET at zero gate bias. Moreover, the forward current of diode can be well-reduced by hundred times ascribed to oxidized Al nanoparticles during the UV/O3 process. Based on this diode gate structure, the maximum drain current density, transconductance, on/off ratio, and subthreshold swing of the normally off DBG-FET are 21.8 mA/mm, 9.1 mS/mm, 109, and 96 mV/dec, respectively. The DBG-FET is expected to promote the development of normally off diamond FETs. [ABSTRACT FROM AUTHOR]

Ni based composite coatings containing micro-and nano-TiC particles were prepared by dipulse electrodepositing in Watt's nickel solution.The effect of nano-TiC content in the solution on the micro morphology,microstructure,hardness and wear resistance of composite coatings was investigated.The results show that the agglomeration of composite coatings of Ni-TiC appears and the density decreases by adding nano-TiC particles in electrolyte,the microstructure of coatings consists of Ni and TiC phase;the hardness of composite coatings firstly increases and then decreases with increasing the content of nano-TiC in bath;however,the friction coefficient of coatings firstly decreases and then increases,the maximum value of microhardness of coating with 445HV is achieved when containing 6.0g/L nano-TiC in bath,at the same time,the smaller friction coefficient of coating is about 0.22.The wear mechanism is mainly abrasive wear.Coatings under the oxidation condition at 900℃ for 100h show the best oxidation resistance which the mass gain with 6.828mg/cm2 is 1/2 of that of micro-TiC composite coating.