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High-quality III–V quantum structures, advanced epitaxial technologies, and characterization methods are essential to drive the development of infrared optoelectronic materials and devices. As an important component of type II superlattices, InAs/InxGa1−xAsySb1−y would play an important role in the field of high-performance infrared detectors due to their excellent luminescence efficiency and high crystal quality. However, their interfacial characteristics and the associated minority carrier lifetime are still difficult to identify. In this paper, an atomic imaging technique was used to identify the arrangement and distribution of elements of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice. Our results confirm the epitaxy mechanism that the quaternary alloy consists of two kinds of ternary alloy in one monolayer. Moreover, by separating the cation and anion columns in the elementally resolved atomic images of the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice, we demonstrate that the interfacial atomic intermixing is less than one molecular layer thickness. Therefore, benefiting from excellent interface quality, InAs/In0.5Ga0.5As0.5Sb0.5 superlattice exhibited high radiation recombination efficiency in the long-wave infrared band (∼8.5 μm), and longer minority carrier lifetime (∼810 ns at 90 K). [ABSTRACT FROM AUTHOR]

To address the most significant environmental challenges, the quest for high-performance gas sensing materials is crucial. Among numerous two-dimensional materials, this study investigates the gas-sensitive capabilities of monolayer As, Sb, and Bi materials. To compare the gas detection abilities of these three materials, we employ first-principles calculations to comprehensively study the adsorption behavior of NO and NO2 gas molecules on the material surfaces. The results indicate that monolayer Bi material exhibits reasonable adsorption distances, substantial adsorption energies, and significant charge transfer for both NO and NO2 gases. Therefore, among the materials studied, it demonstrates the best gas detection capability. Furthermore, monolayer As and Sb materials exhibit remarkably high capacities for adsorbing NO and NO2 gas molecules, firmly interacting with the gas molecules. Gas adsorption induces changes in the material's work function, suggesting the potential application of these two materials as catalysts. [ABSTRACT FROM AUTHOR]

Two-dimensional materials have been extensively investigated for fabricating high-performance visible optoelectronic devices. Considering the significance of mid-infrared band, narrow-band two-dimensional semiconductor materials have become the key point. In this work, we bring out two kinds of monolayer lateral heterostructures (LHSs) based on arsenic (As)/antimony (Sb) to realize the narrow band structure. The bandgap of LHS with an armchair interface is calculated to be 1.1 eV with an indirect band through the first principle, and the bandgap of LHS with a zigzag interface is 0.57 eV with a direct band. Their bandgaps are all shrunk by applying tensile or compressive strains. Furthermore, indirect-to-direct transitions appear in the armchair LHS when tensile strains are applied. Partial density-of-states and charge density distributions indicate that electron transmission from Sb atoms to As atoms may be the main factor for the reduction of the bandgap. In addition, the tensile strain extends the optical absorption to the infrared region. The As/Sb lateral heterostructures proposed in this paper are of great significance for infrared optoelectronic devices. [ABSTRACT FROM AUTHOR]

The investigation of the oxidation behavior of van der Waals chalcogenides holds significant importance in terms of preventing and controlling oxidation, utilizing surface oxidation structures to regulate properties, and advancing applications. Here, taking GaSe as a candidate, its thermal oxidation and surface structure evolution are intensively studied. Through systematic microscopic analyses, oxidized structures at multi‐scale (from atomic scale to millimeters) are resolved, and various assembly heterogeneous surfaces including Ga2Se3/Ga2O3 and Ga2O3 multilayers are uncovered at different oxidation temperatures. The temperature‐dependent oxidation behavior and surface structure evolution of the GaSe are revealed, and the oxidation mechanisms in the entire temperature range are also disclosed. Finally, the photoluminescence regulation of the GaSe is initially explored via thermal oxidation, demonstrating great potential for surface oxidation engineering. This study is not only of great importance for the deep understanding and utilization of GaSe oxidation, but also beneficial for materials/device design and development of relative systems. [ABSTRACT FROM AUTHOR]

Predicting and designing highly gas‐sensitive semiconductors is crucial for solving growing environmental problems. Herein, four lateral heterostructures (LHSs), As6/Sb6 AC‐/ZZ‐LHSs and Sb6/Bi6 AC‐/ZZ‐LHSs, are constructed. The adsorption of NO molecule on these LHSs is investigated using first‐principle calculations. The results indicate that the adsorption of NO molecule on As6/Sb6 LHS with armchair (AC) interface is physisorption, whereas NO molecule is chemically adsorbed on As6/Sb6 LHS with zigzag (ZZ) interface and Sb6/Bi6 AC‐/ZZ‐LHSs, with strong adsorption energy and large charge transfer. All LHSs act as charge donors for the NO molecule. Meanwhile, the adsorption of NO molecule causes a significant change in the electronic properties of As6/Sb6 ZZ‐LHS and Sb6/Bi6 AC‐/ZZ‐LHSs, which shows that these LHSs have great potential for application in NO gas sensors. [ABSTRACT FROM AUTHOR]

Strain engineering is an effective way to adjust the sensing properties of two-dimensional materials. In this paper, lateral heterojunctions (LHSs) based on arsenic and antimony have been designed along the armchair (AC) or zigzag (ZZ) edges. The adsorption and sensing characteristics of As/Sb LHSs to NO2 before and after applying different types of strain are calculated by first principles. The band gaps of all As/Sb heterostructures are contributed by As-p and Sb-p orbitals. In addition, the adsorption energy of As/Sb ZZ-LHS with −4% compression strain is the largest. Furthermore, its work function changes significantly before and after the adsorption of NO2. Meanwhile, strong orbital hybridizations near the Fermi level are observed and a new state is yielded after applying compressive strain. These results indicate that the As/Sb LHS with ZZ interface under −4% compression strain possesses the best sensing properties to NO2. This work lays the foundation for the fabrication of high-performance NO2 gas sensors. High-performance gas sensors can be used to track and regulate NO2 exposure and emission, as well as to track NO2 concentrations in the atmosphere and support the assessment of air quality. [ABSTRACT FROM AUTHOR]

Perovskite materials with excellent optical and electronic properties have huge potential in the research field of photodetectors. Constructing heterojunctions and promoting carrier transportation are significant for the development of perovskite-based optoelectronics devices with high performances. Herein, we demonstrated a CsPbBr3/SnO2 heterojunction photodetector and improved the device performances through post-annealing treatment of SnO2 film. The results indicated that the electrical properties of SnO2 films will make an important impact on carrier extraction, especially for type-II heterojunction. As the electrons transfer layer in CsPbBr3/SnO2 type-II heterojunction, defects related to oxygen vacancy should be the key factor to affect carrier concentration, induce carriers' limitation and recombination rate. Under proper annealing temperature for SnO2 layer, the recombination rate can decrease to 1.37 × 1021 cm3 s and the spectral responsivity will be highly increased. This work can enhance the understanding on the photoresponse of perovskite photodetectors, and will be helpful for the further optimization and design of optoelectronic devices based on the perovskite heterojunction. [ABSTRACT FROM AUTHOR]