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14 results on '"Wang, Che‐Hung"'

4. Atomic‐Scale Phase Transformation in Perovskite LaCoOx Resistive Switching Memristive Devices.

Author

Chen, Yen‐Jung, Lo, Hung‐Yang, Chiu, Chun‐Chien, Wang, Che‐Hung, Yang, Jan‐Chi, Chen, Jui‐Yuan, and Wu, Wen‐Wei

Subjects
SCANNING transmission electron microscopy, PHASE transitions, RANDOM access memory, REVERSIBLE phase transitions, X-ray photoelectron spectroscopy, PEROVSKITE, TRANSITION metals
Abstract

Resistive random‐access memory (RRAM) is considered the next‐generation nonvolatile memory owing to its simplicity, low power consumption, and high storage density. Resistive switching (RS) occurs in a wide range of materials among the transition metal oxides. Herein, an epitaxial ternary metal oxide layer, LaCoOx (LCO), grown on Nb‐doped SrTiO3 substrates, is utilized as an RRAM device. When voltage is applied, it exhibits excellent RS behavior. More than 900 cycles are obtained, and the retention time reaches up to 104 s. To investigate the RS behavior, high‐resolution transmission electron microscopy and atomic‐scale scanning transmission electron microscopy are used to observe the structural evolution and oxygen ion migration in LCO. The structure exhibits a perovskite–brownmillerite topotactic phase transformation from LaCoO2.5 or LaCoO2.67 to the LaCoO3 conductive regions. The reversible transition between the low‐resistance states and high‐resistance states enables the RS mechanism. Additionally, the valence states are confirmed using high‐resolution X‐ray photoelectron spectroscopy. This study not only illustrates the oxygen‐ion migration mechanism of LCO but also demonstrates its suitability for RRAM applications. [ABSTRACT FROM AUTHOR]

Published
2024
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5. Revealing Resistive Switching Mechanism in CaFeOx Perovskite System with Electroforming‐Free and Reset Voltage‐Controlled Multilevel Resistance Characteristics

Author

Lo, Hung‐Yang, primary, Huang, Chun‐Wei, additional, Chiu, Chun‐Chien, additional, Chen, Jui‐Yuan, additional, Shen, Fang‐Chun, additional, Wang, Che‐Hung, additional, Chen, Yen‐Jung, additional, Wang, Chien‐Hua, additional, Yang, Jan‐Chi, additional, and Wu, Wen‐Wei, additional

Published
2022
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13. The Transitional Factors of Professional Immigrant Entrepreneurs

Author

Wang, Che Hung

Subjects
Entrepreneurship, Immigrant Entrepreneurship, Immigrant, Barriers, Opportunity, Entrepreneurship,
Abstract

This study aims to find the motivational factors that influence professional immigrant entrepreneurs to transition from their corporate jobs to start their own ventures within the United States. International migration for education and entrepreneurial activity has seen a significant increase in the last five years in the United States. This niche group of entrepreneurs is defined as immigrant entrepreneurs with at least a four-year degree that first pursued a corporate job before starting a business. The purpose is to gain insights into this emerging group of immigrant entrepreneurs in order to help advance entrepreneurial activity within the United States. There were 20 semi-structured interviews recorded that were chain sampled from professional connections or referrals. The methodological approach for all participants was grounded theory with three participants selected for phenomenological inquiry. The data collected were transcribed and thematically coded to allow for individual and holistic comparisons. Results indicated there are similar intrinsic and extrinsic factors that can be categorized that influences an entrepreneur’s decision to transition in career path. The outcomes from the study depict that an entrepreneur’s environmental factors had the most significant influence in career transition. Additionally, the barriers faced by these entrepreneurs in terms of equal financial funding for their ventures in comparison to United States citizens led to an implication discovery of potentially developing a universal credit system.

Published
2019

14. Revealing Resistive Switching Mechanism in CaFeO x Perovskite System with Electroforming-Free and Reset Voltage-Controlled Multilevel Resistance Characteristics.

Author

Lo HY, Huang CW, Chiu CC, Chen JY, Shen FC, Wang CH, Chen YJ, Wang CH, Yang JC, and Wu WW

Abstract

Recently, perovskite (PV) oxides with ABO 3 structures have attracted considerable interest from scientists owing to their functionality. In this study, CaFeO x is introduced to reveal the resistive switching properties and mechanism of oxygen vacancy transition in PV and brownmillerite (BM) structures. BM-CaFeO 2.5 is grown on an Nb-STO conductive substrate epitaxially. CaFeO x exhibits excellent endurance and reliability. In addition, the CaFeO x also demonstrates an electroforming-free characteristic and multilevel resistance properties. To construct the switching mechanism, high-resolution transmission electron microscopy is used to observe the topotactic phase change in CaFeO x . In addition, scanning TEM and electron energy loss spectroscopy show the structural evolution and valence state variation of CaFeO x after the switching behavior. This study not only reveals the switching mechanism of CaFeO x , but also provides a PV oxide option for the dielectric material in resistive random-access memory (RRAM) devices., (© 2022 Wiley-VCH GmbH.)

Published
2022
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