1. Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice.
- Author
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Tang, Bin, Wan, Zehong, Hu, Hongpo, Gong, Liyan, and Zhou, Shengjun
- Subjects
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SAPPHIRES , *CHEMICAL vapor deposition , *SUPERLATTICES , *CRYSTALS - Abstract
We report the metal-organic chemical vapor deposition growth of high-quality AlN on sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the insertion of an alternating V/III ratio AlN superlattice facilitates the relaxation of tensile stress during growth and assists the annihilation of threading dislocations. Dislocation inclination was proposed to play a major role in the stress relaxation and dislocation reduction, which not only provides an effective misfit-dislocation component but also increases the dislocation reaction probability. By this method, crack-free 3.25 μm-thick AlN films were grown on flat sapphire substrate (FSS) and nano-patterned sapphire substrate (NPSS) at 1180 °C, and the full width at half maximum of (002)/(102) rocking curves was 204/408 and 152/323 arcsec for such AlN/FSS and AlN/NPSS templates. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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