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1,976 results on '"Wakabayashi, H."'

22. Accuracy of non-paralytic anthropometric data for nutritional screening in older patients with stroke and hemiplegia

Author

Nishioka, S., Wakabayashi, H., and Yoshida, T.

Subjects
Nutrition -- Product/Service Evaluations, Stroke (Disease) -- Diagnosis -- Demographic aspects, Aged patients -- Food and nutrition, Hemiplegia -- Diagnosis -- Demographic aspects, Food/cooking/nutrition, Health
Abstract

BACKGROUND/OBJECTIVES: Although malnutrition commonly affects stroke patients, there are no validated screening tools. We verified the usefulness of non-paralytic anthropometric measurements for the nutritional screening of stroke. SUBJECTS/METHODS: A cross-sectional study was conducted in consecutive stroke patients with hemiplegia aged [greater-than or slanted equal to]65 years, with Mini Nutritional Assessment Short Form score [[less-than or slanted equal to]11. Diagnostic malnutrition criteria from the European Society for Clinical Nutrition and Metabolism were the reference standards: body mass index (BMI) 10%+BMI RESULTS: We included 488 patients (224 men and 264 women) with a mean age of 78.8 years and mean BMI of 22.0 and 21.1 kg/m.sup.2, respectively. Eighty-one men and 124 women had malnutrition. The AUC for CC, AC, TSF, AMC and Alb was 0.859, 0.825, 0.764, 0.745 and 0.670 for men, and 0.881, 0.843, 0.796, 0.742 and 0.658 for women, respectively. In both sexes, CC had the highest kappa (0.533, 0.608; both P CONCLUSIONS: Non-paralytic CC indicated malnutrition with sufficient accuracy and good correlation with functional capacity; it may be a useful nutritional screening tool for stroke., Author(s): S Nishioka [sup.1] , H Wakabayashi [sup.2] , T Yoshida [sup.3] Author Affiliations: (1) Department of Clinical Nutrition and Food Services, Nagasaki Rehabilitation Hospital, Nagasaki, Japan (2) Department of [...]

Published
2017
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34. The Second Test Results on the Nb3Sn Demo Poloidal Coil(DPC-EX)

Author

Ando, T., Nakajima, H., Sasaki, T-Y., Hiyama, T., Takahashi, Y., Nishi, M., Yoshida, K., Okuno, K., Kato, T., Sugimoto, M., Isono, T., Kawano, K., Koizumi, N., Hamada, K., Oshikiri, M., Sasaki, T., Wadayama, Y., Miyake, A., Iwamoto, S., Takahashi, T., Ebisu, H., Hosono, T., Yamamoto, K., Yasukawa, Y., Tsukamoto, H., Hanawa, H., Seki, S., Wakabayashi, H., Tsuji, H., Takayasu, M., Turck, B., Wuchuner, F., and Kittel, Peter, editor

Published
1994
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37. Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate.

Author

Nishizawa, M., Hoshii, T., Wakabayashi, H., Tsutsui, K., Daigo, Y., Mizushima, I., Yoda, T., and Kakushima, K.

Abstract

A method for using device simulation to extract the hole lifetime (τ p) of a thin n-type SiC epitaxial layer on the basis of the characteristics of parallel diodes is proposed. The voltage drop (Δ V) across a forward-biased pn diode (single-setup) and parallel pn diodes (multi-setup) at the same current density (J) is correlated with the defined τ p. A severe error in the extraction of Δ V was found and attributed to surface recombination. The extraction error was recovered by the introduction of a field-plate between the anodes, where the field-plate was biased to accumulate the surface of the n-base region. An extraction accuracy of 99% was achieved even with a surface recombination velocity of 105 cm s−1. [ABSTRACT FROM AUTHOR]

Published
2022
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38. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure.

Author

Miyata, Atsuki, Hoshii, T., Wakabayashi, H., Tsutsui, K., and Kakushima, K.

Abstract

Photodetectors based on an AlGaN/GaN high electron mobility transistor on Si have a long decay time after removal of light irradiation because of the large number of defects. This behavior is unsuitable for applications that require fast response. In several papers, though decay time was suppressed by thermal heating, it has problems such as fabrication complexity and power consumption. In this paper, we propose a substrate voltage (V sub) application method for suppressing decay time, which modulates the V sub immediately after the removal of UV irradiation, which promotes injecting electrons from two-dimensional electron gas to the carbon-doped GaN (C-GaN) layer. The decay time was suppressed from 75 to 2 s. Moreover, the effectiveness of reset voltage application is confirmed by a demonstration that changes the UV intensity continuously. [ABSTRACT FROM AUTHOR]

Published
2022
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39. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

Author

Watanabe, M., primary, Shigyo, N., additional, Hoshii, T., additional, Furukawa, K., additional, Kakushima, K., additional, Satoh, K., additional, Matsudai, T., additional, Saraya, T., additional, Takakura, T., additional, Muneta, I., additional, Wakabayashi, H., additional, Nakajima, A., additional, Nishizawa, S., additional, Tsutsui, K., additional, Hiramoto, T., additional, Ohashi, H., additional, and Iwai, H., additional

Published
2021
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40. Mobility and velocity enhancement effects of high uniaxial stress on Si (100) and (110) substrates for short-channel pFETs

Author

Mayuzumi, S., Yamakawa, S., Kosemura, D., Takei, M., Nagata, K., Akamatsu, H., Wakabayashi, H., Amari, K., Tateshita, Y., Tsukamoto, M., Ohno, T., Ogura, A., and Nagashima, N.

Subjects
Field-effect transistors -- Innovations, Silicon compounds -- Electric properties, Electron mobility -- Methods, Simulation methods -- Usage, Business, Electronics, Electronics and electrical industries
Published
2010

44. Channel-stress enhancement characteristics for scaled pMOSFETs by using damascene gate with top-cut compressive stress liner and eSiGe

Author

Mayuzumi, S., Yamakawa, S., Kosemura, D., Takei, M., Tateshita, Y., Wakabayashi, H., Tsukamoto, M., Ohno, T., Ogura, A., and Nagashima, N.

Subjects
Silicon alloys -- Electric properties, Silicon alloys -- Mechanical properties, Stress analysis (Engineering) -- Usage, Germanium -- Electric properties, Metal oxide semiconductor field effect transistors -- Composition, Metal oxide semiconductor field effect transistors -- Electric properties, Raman spectroscopy -- Usage, Business, Electronics, Electronics and electrical industries
Published
2009

48. Alternative to Rituximab Therapy for a Patient with Ankylosing Spondylitis Who Was Unable to Continue Anti-TNF Therapy

Author

Katsuyama, E., Wakabayashi, H., Sada, K. -E, Hiramatsu, S., Miyawaki, Y., Morishita, M., Ohashi, K., Watanabe, H., Katsuyama, T., Zeggar, S., Narazaki, M., Tatebe, N., Watanabe, K. S., Kawabata, T., and Jun Wada

Subjects
Adult, Male, musculoskeletal diseases, rituximab, treatment, Antirheumatic Agents, ankylosing spondylitis, Humans, Spondylitis, Ankylosing, Infliximab
Abstract

We herein present a case of a 38-year-old man who had bamboo spine and severe sacroiliitis and who was diagnosed with ankylosing spondylitis (AS). Infliximab (IFX) markedly improved the axial symptom but was discontinued due to the side effect of peripheral neuropathy. Switching from IFX to etanercept worsened the side effect. Rituximab (RTX) administration elicited a good response without side effects. RTX might be a suitable option for AS therapy when TNF inhibitors are difficult to use.

Published
2017

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