1. Mobility in Graphene Double Gate Field Effect Transistors
- Author
-
Lemme, M. C., Echtermeyer, T. J., Baus, M., Szafranek, B. N., Bolten, J., Schmidt, M., Wahlbrink, T., and Kurz, H.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values., Comment: 7 pages, 9 figures
- Published
- 2008
- Full Text
- View/download PDF