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Your search keyword '"Wahl, Jeremy A."' showing total 10 results
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10 results on '"Wahl, Jeremy A."'

1. Multiple-fluorophore-specie detection with a tapered Fabry-Perot fluorescence spectrometer

Author

Wahl, Jeremy A., Van Delden, Jay S., and Tiwari, Sandip

Subjects
Optics -- Research, Fluorescence -- Research, Algorithms -- Research, Algorithms -- Technology application, Algorithm, Technology application, Astronomy, Physics
Abstract

A novel fluorescence spectrometer and method for the simultaneous detection of multiple-fluorophore species in a no-moving-parts, instantaneous manner is described. In the reported embodiment of the instrument, a tapered Fabry-Perot filter is used to spatially encode the fluorescence spectrum from a multiple-dye-containing test sample. Using a pseudoinverse reconstruction algorithm, we spectrally decode the particle concentration for each dye specie in the test sample. Experimental results are reported along with a theoretical treatment of the method.

Published
2005

2. mmWave and sub-THz Technology Development in Intel 22nm FinFET (22FFL) Process

Author

Yu, Qiang, primary, Rami, Said, additional, Waldemer, James, additional, Ma, Yunzhe, additional, Neeli, Vijaya, additional, Garrett, Jeffrey, additional, Liu, Guannan, additional, Koo, Jabeom, additional, Marulanda, Mauricio, additional, Morarka, Saurabh, additional, Ravikumar, Surej, additional, Yeh, Yi-Shin, additional, Chou, Jessica, additional, Brown, Thomas, additional, Rane, Triveni, additional, Nieva, Carlos, additional, Ali, Dyan, additional, Joglekar, Sameer, additional, Armstrong, Mark, additional, Wahl, Jeremy, additional, Paulson, Leif, additional, Dogiamis, Georgios, additional, Monroe, Nathan, additional, Han, Ruonan, additional, Lee, Hyung-Jin, additional, Fu, Hui, additional, Sell, Bernhard, additional, Karl, Eric, additional, and Zhang, Ying, additional

Published
2020
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3. (Invited)Extending Advanced CMOS Scaling with SiGe Channel Materials

Author

Carter, Rick J, primary, Sporer, Ryan, additional, McArdle, Timothy J, additional, Mulfinger, George Robert, additional, Holt, Judson Robert, additional, Beasor, Scott, additional, Child, Amy, additional, Fronheiser, Jody, additional, Wahl, Jeremy A, additional, Geisler, Holm, additional, Kluth, George J, additional, Triyoso, Dina H, additional, Punchihewa, Kasun, additional, Rana, Uzma, additional, Vanamurthy, Laks, additional, and Sohn, D K, additional

Published
2018
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4. XPS-XRF hybrid metrology enabling FDSOI process

Author

Hossain, Mainul, additional, Subramanian, Ganesh, additional, Triyoso, Dina, additional, Wahl, Jeremy, additional, Mcardle, Timothy, additional, Vaid, Alok, additional, Bello, A. F., additional, Lee, Wei Ti, additional, Klare, Mark, additional, Kwan, Michael, additional, Pois, Heath, additional, Wang, Ying, additional, and Larson, Tom, additional

Published
2016
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6. (Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)

Author

Triyoso, Dina, primary, Carter, Rick, additional, Kluth, Jon, additional, Luning, Scott, additional, Child, Amy, additional, Wahl, Jeremy, additional, Mulfinger, Bob, additional, Punchihewa, Kasun, additional, Kumar, Anil, additional, Kang, Laegu, additional, Sporer, Ryan, additional, Chen, Xiaobo, additional, Straub, Sherry, additional, Bohra, Girish, additional, Patil, Suraj, additional, Zhang, Xing, additional, Chen, Alex, additional, Togo, Mitsuhiro, additional, and Pal, Rohit, additional

Published
2015
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7. (Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials

Author

Carter, Rick J, Sporer, Ryan, McArdle, Timothy J, Robert, George, Robert, Judson, Beasor, Scott, Child, Amy, Fronheiser, Jody, Wahl, Jeremy A, Geisler, Holm, Kluth, George J, Triyoso, Dina H, Punchihewa, Kasun, Rana, Uzma, Vanamurthy, Laks, and Sohn, D K

Abstract

Advanced CMOS Scaling has benefited from the introduction of novel materials and integration techniques over the past two decades. Consumer demand for more connectivity and real-time information continues to drive the need for product solutions with advanced power management and increased functionality while maintaining low cost. New device architectures such as FINFET and Fully Depleted Silicon-On-Insulator are part of the solution, however these device architectures still rely on advanced channel strain engineering to meet power, performance, and scaling requirements. The use of SiGe as a channel material is attractive due to enhanced mobility and compatibility with standard CMOS processing. PFET drive current enhancement has already been realized to enable platforms based on high performance planar FDSOI devices, while SiGe as part of the channel is also a top solution to enable next generation FINFET and Gate-All-Around devices. In this invited paper we will provide a look into the device benefits and challenges of SiGe as a channel material.

Published
2018

9. Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing.

Author

Itokawa, Hiroshi, Berliner, Nathaniel C., Teehan, Sean, Wall, Donald R., Wahl, Jeremy A., Kim, Eunha, Li, Juntao, Demarest, James J., Ronsheim, Paul, and Paruchuri, Vamsi

Abstract

Formation of heavy C and/or P doping Si alloy with a strain and/or low resistivity in FinFET S/D having only {110} plane on fin sidewall poses a challenge because, if the CVD selective epitaxy typically used in recent S/D process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on {110} crystallographic plane. We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incorporated Si solid-phase epitaxy and improvement of P-activation in heavily P-doped Si alloy epitaxially grown film, while annihilating defects. In this paper, the diffusion and the activation of C atoms and P atoms in Si with C additive are investigated for different nonmelt laser annealing conditions. Additionally, the influence of cryogenic implantation of Si+ into amorphized P-doped Si epitaxial layer followed by nonmelt laser annealing recystallization on the diffusion and activation of P atoms in Si is discussed. [ABSTRACT FROM PUBLISHER]

Published
2012
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10. XPS-XRF hybrid metrology enabling FDSOI process

Author

Sanchez, Martha I., Ukraintsev, Vladimir A., Hossain, Mainul, Subramanian, Ganesh, Triyoso, Dina, Wahl, Jeremy, Mcardle, Timothy, Vaid, Alok, Bello, A. F., Lee, Wei Ti, Klare, Mark, Kwan, Michael, Pois, Heath, Wang, Ying, and Larson, Tom

Published
2016
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