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A long wavelength emission in 1.3micrommeter optical communication range from nitrided InAs/GaAs quantum dots (QDs) is studied. It was observed that as compared to the conventional QDs grown without nitriding the quantum dots surface, it was found that nitridation results in larger dots with a larger large aspect ratio.

The effect of Fourier transformed photoreflectance (PR) spectroscopy on GaAs/Ga0.5In0.5P heterojunction bipolar transistor wafers is presented. It is reported that the atomic ordering in the Ga0.5In0.5P emitter plays an important role in determining the characteristics of the emitter-base interface.

A study was conducted on ultrafast all-optical switches based on semiconductor quantum well structures for the development of modulators or switches for ultrafast all-optical networks in the future. The application of ultrashort intersubband light pulses to maintain the sufficiently low optical energy required for device operations is considered. A novel scheme based on the simultaneous use of intersubband-control and interband-signal lights both in the pulse form is also proposed.

We have studied long-wavelength emission in 1.3-μm optical communication range from nitrided InAs/GaAs quantum dots (QDs). Atomic-layer nitridation just after the growth of InAs QDs realizes a remarkable redshift of the photoluminescence peak by more than 150 nm. Growth temperature plays a key role in achieving room-temperature emission from the QDs. The emission wavelength can be adjusted by controlling the growth conditions of the initial InAs QDs. As compared with conventional QDs grown without nitridizing the QD surface, it is found that the nitridation results in larger dots with a large aspect ratio. [ABSTRACT FROM AUTHOR]

Presents information on a study which explored the early stage of the superconductor degradation in barium[sub2] yttrium copper[sub3] oxide[sub7--y] from a microscopic standpoint using transmission electron microscopy. Changes before and after the exposure to air; Exposure to nitrogen atmosphere nearly saturated with water vapor; High resolution images of the planar defects.

Presents a study which discussed the impact of ionization rates of holes in Al[subx]Ga[sub1-x]Sb near x=0.06, where resonance impact ionization is expected. Results of measurement of impact ionization rates; Impact ionization probability at the spin-split-off band; Scattering rates of holes.