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We report the redox switching of ferrocene moieties embedded in a double tunnel barrier plasmonic cavity fabricated from a click-chemistry self-assembled monolayers of ferrocenyl-alkylthiol on ultra flat gold surfaces, connected to a single poly(vinylpyrrolidone) capped silver nanocube, AgNC, which is contacted by the tip of a conductive-AFM to study the electron transport properties in the dark and under light irradiation at the plasmonic resonance wavelengths. We observe a dual behavior in the current-voltage (I-V) characteristics in the dark: a large hysteresis loop at positive voltages and an hysteretic negative differential conductance (NDC) at negative voltages, due to the redox switching of ferrocene between its oxidized (Fc+) and neutral (Fc0) states. The I-V curves are analyzed by a generalized combined Marcus-Landauer model. We determine the highest occupied molecular orbital of the Fc+ and Fc0 states at 0.54 and 0.42 eV below the Fermi energy, respectively, with a weak reorganization energy < 0.1 eV upon switching. Under plasmonic excitation, the hysteresis and NDC behaviors are no longer observed and the I-V characteristics of the Au-ferrocenyl-alkylthiol/AgNC junctions become similar to Au-ferrocenyl-alkylthiol SAMs. A virtual molecular orbital due to the plasmon-induced coupling (fast electron transfer) between the two redox states of the Fc is determined at 0.46 eV. This dynamic behavior opens perspectives in artificial synaptic devices for neuromorphic computing with the additional function to turn on/off this synaptic behavior on-demand by light., Comment: Full manuscript with the supporting information

We report a combined experimental (C-AFM and SThM) and theoretical (DFT) study of the thermoelectric properties of molecular junctions made of self-assembled monolayers on Au of thiolated benzothieno-benzothiophene (BTBT) and alkylated BTBT derivatives (C8-BTBT-C8). We measure the thermal conductance per molecule at 15 pW/K and 8.8 pW/K, respectively, among the lowest values for molecular junctions so far reported (10-50 pW/K). The lower thermal conductance for C8-BTBT-C8 is consistent with two interfacial thermal resistances introduced by the alkyl chains, which reduce the phononic thermal transport in the molecular junction. The Seebeck coefficients are 36 {\mu}V/K and 245 {\mu}V/K, respectively, the latter due to the weak coupling of the core BTBT with the electrodes. We deduce a thermoelectric figure of merit ZT up to ca. 1E-4 for the BTBT molecular junctions at 300K, on a par with the values reported for archetype molecular junctions (olygo(phenylene ethynylene) derivatives)., Comment: Full paper and supporting information

We study the low-frequency noise (LFN), i.e. flicker noise, also referred to as 1/f noise, in 2D networks of molecularly functionalized gold nanoparticles (NMN: nanoparticle-molecule network). We examine the noise behaviors of the NMN hosting alkyl chains (octanethiol), fatty acid oleic acids (oleylamine), redox molecule switches (polyoxometalate derivatives) or photo-isomerizable molecules (azobenzene derivatives) and we compare their 1/f noise behaviors. These noise metrics are used to evaluate which molecules are the best candidates to build in-materio reservoir computing molecular devices based on NMNs., Comment: Full paper and supporting information, revised

The attachment of redox active molecules to transition metal dichalcogenides (TMDs), such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material charge/spin transport properties by the redox state of the grafted molecule and thus the applied electrical potential. In this work, defective plasma treated MoS2 is functionalized by a ferrocene derivative and thoroughly investigated by various characterization techniques, such as Raman, photoluminescence, X-ray photoelectron spectroscopies, atomic force microscopy (AFM) and electrochemistry. Furthermore, in-plane and out-of-plane conductive-AFM measurements (I-V and first derivative dI/dV-V curves) are measured to investigate the effect of the chemical functionalization of MoS2 on the electron transport properties. While the conduction and valence bands are determined at +0.7 and -1.2 eV with respect of the electrode Fermi energy for pristineMoS2, additional states in an energy range of ca. 0.45 eV below the MoS2 conduction band are measured after plasma treatment, attributed to S-vacancies. For ferrocene functionalized MoS2, the S-vacancy states are no longer observed resulting from the defect healing. However, two bumps at lower voltages in the dI/dV-V indicate a contribution to the electron transport through ferrocene HOMO, which is located in the MoS2 band gap at ca. 0.4-0.6 eV below the Fermi energy. These results are in good agreement with theoretical density functional theory (DFT) calculations and UV photoelectron spectroscopy (UPS) measurements., Comment: Full manuscript with figures and supporting information

We report a study of the electron transport (ET) properties at the nanoscale (conductive-AFM noted C-AFM thereafter) of individual Prussian Blue Analog (PBA) cubic nanocrystals (NCs) of CsCo(III)Fe(II), with size between 15 and 50 nm deposited on HOPG. We demonstrate that these PBA NCs feature an almost size independent electron injection barriers of 0.41 +/- 0.02 eV and 0.27 +/- 0.03 eV at the CsCo(III)Fe(II)/HOPG and CsCo(III)Fe(II)/C-AFM tip, respectively, and an intrinsic electron conductivity evolving from largely dispersed between ca. 5E-4 and 2E-2 S/cm without a clear correlation with the nanocrystal size. The conductivity values measured on individual nanocrystals are higher by up to 5 decades than those reported on PBA films.

Molecular electronics targets tiny devices exploiting the electronic properties of the molecular orbitals, which can be tailored and controlled by the chemical structure/conformation of the molecules. Many functional devices have been experimentally demonstrated; however, these devices were operated in the low frequency domain (mainly, dc to MHz). This represents a serious limitation for electronic applications, albeit molecular devices working in the THz regime were theoretically predicted. Here, we experimentally demonstrate molecular THz switches at room temperature. The devices consist of self-assembled monolayers of molecules bearing two conjugated moieties coupled through a non-conjugated linker. These devices exhibit clear negative differential conductance behaviors (peaks in the current-voltage curves), as confirmed by ab initio simulations, which were reversibly suppressed under illumination with a 30 THz wave. We analyze how the THz switching behavior depends on the THz wave properties (power, frequency), and we benchmark that these molecular devices would outperform actual THz detectors., Comment: Full paper, figures and supporting information

We demonstrate a high electron conductivity (> 10^2 S/cm and up to 10^3 S/cm) of tungsten suboxide W18O(52.4-52.9)(or equivalently WO(2.91-2.94)) nanotubes (2 to 3 nm in diameter, ca. micrometer long). The conductivity is measured in the temperature range 120 to 300K by a four probe scanning tunneling microscope in ultra high vacuum. The nanotubes are synthesized by a low temperature and low cost solvothermal method. They selfassemble in bundles of hundreds of nanotubes forming nanowires (ca. micrometer long, few tens nm wide). We observe a large anisotropy of the conductivity with a ratio (longitudinal conductivity/perpendicular conductivity) of ca. 10^5. A large fraction of them (ca. 65 to 95%) shows a metallic like, thermal activation less, electron transport behavior. Few of them, with a lower conductivity from 10 to 10^2 S/cm, display a variable range hopping behavior. In this latter case, a hopping barrier energy of ca. 0.24 eV is inferred in agreement with the calculated energy level of the oxygen vacancy below the conduction band. This result is in agreement with a relative average concentration of oxygen vacancies of ca. 3%, for which a semiconductor to metal transition was theoretically predicted. These tungsten suboxide nanostructures are prone to a wide range of applications in nanoelectronics., Comment: Main text and supporting information

Polyoxometalates are nanoscale molecular oxides with promising properties that are currently explored for molecule-based memory devices. In this work, we synthesize a series of Preyssler polyoxometalates (POMs), (Na-P5W30O110)14-,stabilized with four different counterions, H+, K+, NH4+ and tetrabutylammonium (TBA+), and we study the electron transport properties at the nanoscale (conductive atomic force microscopy, C-AFM) of molecular junctions formed by self-assembled monolayers (SAMs) of POMs electrostatically deposited on ultraflat gold surface prefunctionalized with a positively charged SAM of amine-terminated alkylthiol chains. We report that the electron transport properties of P5W30-based molecular junctions depend on the nature of the counterions, the low-bias current (in the voltage range -0.6 V to 0.6 V) gradually increasing by a factor ca. 100 by changing the counterion in the order K+, NH4+, H+ and TBA+. From a statistical study (hundreds of current-voltage traces) using a simple analytical model for charge transport in nanoscale devices, we show that the energy position of the lowest unoccupied molecular orbital (LUMO) of the P5W30 with respect of the Fermi energy of the electrodes increases from ca. 0.4 eV to 0.7 eV and that that electrode coupling energy also increases from ca. 0.05 to 1 meV in the same order from K+, NH4+, H+ to TBA+. We discuss several hypotheses on the possible origin of these features, such as a counterion-dependent dipole at the POM/electrode interface and counterion-modulated molecule/electrode hybridization, with, in both cases, the largest effect in the case of TBA+ counterions., Comment: Preprint: full text, figures and supporting information

We report a study on the relationship between structure and electron transport properties of nanoscale graphene/pentacene interfaces. We fabricated graphene/pentacene interfaces from 10-30 nm thick needle-like pentacene nanostructures down to two-three layers (2L-3L) dendritic pentacene islands, and we measured their electron transport properties by conductive atomic force microscopy (C-AFM). The energy barrier at the interfaces, i.e. the energy position of the pentacene highest occupied molecular orbital (HOMO) with respect to the Fermi energy of the graphene and the C-AFM metal tip, are determined and discussed with the appropriate electron transport model (double Schottky diode model and Landauer-Buttiker model, respectively) taking into account the voltage-dependent charge doping of graphene. In both types of samples, the energy barrier at the graphene/pentacene interface is slightly larger than that at the pentacene/metal tip interface, resulting in 0.47-0.55 eV and 0.21-0.34 eV, respectively, for the 10-30 nm thick needle-like pentacene islands, and in 0.92-1.44 eV and 0.67-1.05 eV, respectively, for the 2L-3L thick dendritic pentacene nanostructures. We attribute this difference to the molecular organization details of the pentacene/graphene heterostructures, with pentacene molecules lying flat on the graphene in the needle-like pentacene nansotructures, while standing upright in 2L-3L dendritic islands, as observed from Raman spectroscopy., Comment: Paper and its supplementary information

We demonstrate the reversible in situ photoreduction of molecular junctions of phosphomolybdate [PMo12O40]3- monolayer self-assembled on flat gold electrodes, connected by the tip of a conductive atomic force microscope. The conductance of the one electron reduced [PMo12O40]4- molecular junction is increased by ca. 10, this open-shell state is stable in the junction in air at room temperature. The analysis of a large current-voltage dataset by unsupervised machine learning and clustering algorithms reveals that the electron transport in the pristine phosphomolybdate junctions leads to symmetric current-voltage curves, controlled by the lowest unoccupied molecular orbital (LUMO) at 0.6 - 0.7 eV above the Fermi energy with ca. 25% of the junctions having a better electronic coupling to the electrodes than the main part of the dataset. This analysis also shows that a small fraction (ca. 18% of the dataset) of the molecules is already reduced. The UV light in situ photoreduced phosphomolybdate junctions are systematically featuring slightly asymmetric current - voltage behaviors, which is ascribed to electron transport mediated by the single occupied molecular orbital (SOMO) nearly at resonance with the Fermi energy of the electrode and by a closely located single unoccupied molecular orbital (SUMO) at ca. 0.3 eV above the SOMO with a weak electronic coupling to the electrodes (ca. 50% of the dataset) or at ca. 0.4 eV but with a better electrode coupling (ca. 50% of the dataset). These results shed lights to the electronic properties of reversible switchable redox polyoxometalates, a key point for potential applications in nanoelectronic devices.

Two new photo-switchable terphenylthiazoles molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high vacuum reveal a conductance of the light-induced closed (c) form larger than for the open (o) form. We report an unprecedented conductance ratio up to 380 between the closed and open forms on Co for the molecule with the anchoring group (thiol) on the side of the two N atoms of the thiazole unit. This result is rationalized by Density Functional Theory (DFT) calculations coupled to the Non-Equilibrium Green's function (NEGF) formalism. These calculations show that the high conductance in the closed form is due to a strong electronic coupling between the terphenylthiazole molecules and the Co electrode that manifests by a resonant transmission peak at the Fermi energy of the Co electrode with a large broadening. This behavior is not observed for the same molecules self-assembled on gold electrodes. These high conductance ratios make these Co-based molecular junctions attractive candidates to develop and study switchable molecular spintronic devices., Comment: Paper and supporting information

This review presents recent results on the physics of electron transport in molecular devices. The review is organized as follows. A brief description of molecular junction (MJ) technology is first given followed by an introduction to the basic physics of electron transport through MJs from DC to about 20 GHz. Then, several sections review selected results on spin-dependent transport, plasmonics, quantum interferences, thermal transport and electronic noise in ME devices.

We report the formation of self-assembled monolayers of a molecular photoswitch (azobenzene-bithiophene derivative, AzBT) on cobalt via a thiol covalent bond. We study the electrical properties of the molecular junctions formed with the tip of a conductive atomic force microscope under ultra-high vacuum. The statistical analysis of the current-voltage curves shows two distinct states of the molecule conductance, suggesting the coexistence of both the trans and cis azobenzene isomers on the surface. The cis isomer population (trans isomer) increases (decreases) upon UV light irradiation. The situation is reversed under blue light irradiation. The experiments are confronted to first-principle calculations performed on the molecular junctions with the Non-Equilibrium Green's Function formalism combined with Density Functional Theory (NEGF/DFT). The theoretical results consider two different molecular orientations for each isomer. Whereas the orientation does not affect the conductance of the trans isomer, it significantly modulates the conductance of the cis isomer and the resulting conductance ON/OFF ratio of the molecular junction. This helps identifying the molecular orientation at the origin of the observed current differences between the trans and cis forms. The ON state is associated to the trans isomer irrespective of its orientation in the junction, while the OFF state is identified as a cis isomer with its azobenzene moiety folded upward with respect to the bithiophene core. The experimental and calculated ON/OFF conductance ratios have a similar order of magnitude. This conductance ratio seems reasonable to make these Co-AzBT molecular junctions a good test-bed to further explore the relationship between the spin-polarized charge transport, the molecule conformation and the molecule-Co spinterface., Comment: Full manuscript and supporting information

We study by scanning thermal microscopy the nanoscale thermal conductance of films (40 to 400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-of-plane thermal conductivity is significant along the interlayer direction, larger for BTBT (0.63 +/- 0.12 W m-1 K-1) compared to C8-BTBT-C8 (0.25 +/- 0.13 W m-1 K-1). These results are supported by molecular dynamics calculations (Approach to Equilibrium Molecular Dynamics method) performed on the corresponding molecular crystals. The calculations point to significant thermal conductivity (3D-like) values along the 3 crystalline directions, with anisotropy factors between the crystalline directions below 1.8 for BTBT and below 2.8 for C8-BTBT-C8, in deep contrast with the charge transport properties featuring a two-dimensional character for these materials. In agreement with the experiments, the calculations yield larger values in BTBT compared to C8-BTBT-C8 (0.6-1.3 W m-1 K-1 versus 0.3-0.7 W m-1 K-1, respectively). The weak thickness dependence of the nanoscale thermal resistance is in agreement with a simple analytical model., Comment: Nanoscale (2021)

Immobilization of polyoxometalates (POMs) onto oxides is relevant to many applications in the fields of catalysis, energy conversion/storage or molecular electronics. Optimization and understanding the molecule/oxide interface is crucial to rationally improve the performance of the final molecular materials. We herein describe the synthesis and covalent grafting of POM hybrids with remote carboxylic acid functions onto flat Si/SiO2 substrates. Special attention has been paid to the characterization of the molecular layer and to the description of the POM anchoring mode at the oxide interface through the use of various characterization techniques, including ellipsometry, AFM, XPS and FTIR. Finally, electron transport properties were probed in a vertical junction configuration and energy level diagrams have been drawn and discussed in relation with the POM molecular electronic features inferred from cyclic-voltammetry, UV-visible absorption spectra and theoretical calculations. The electronic properties of these POM-based molecular junctions are driven by the POM LUMO (d-orbitals) whatever the nature of the tether or the anchoring group., Comment: Manuscript and supporting information

We report electron transport measurements through nano-scale devices consisting of 1 to 3 Prussian blue analog (PBA) nanocrystals connected between two electrodes. We compare two types of cubic nanocrystals, CsCoFe (15 nm) and CsNiCr (6 nm), deposited on highly oriented pyrolytic graphite and contacted by conducting-AFM. The measured currents show an exponential dependence with the length of the PBA nano-device (up to 45 nm), with low decay factors \b{eta}, in the range 0.11 - 0.18 nm-1 and 0.25 - 0.34 nm-1 for the CsCoFe and the CsNiCr nanocrystals, respectively. From the theoretical analysis of the current-voltage curve for the nano-scale device made of a single nanoparticle, we deduce that the electron transport is mediated by the localized d bands at around 0.5 eV from the electrode Fermi energy in the two cases. By comparison with previously reported ab-initio calculations, we tentatively identify the involved orbitals as the filled Fe(II)-t2g d band (HOMO) for CsCoFe and the half-filled Ni(II)-eg d band (SOMO) for CsNiCr. Conductance values measured for multi-nanoparticle nano-scale devices (2 and 3 nanocrystals between the electrodes) are consistent with a multi-step coherent tunneling in the off-resonance regime between adjacent PBAs, a simple model gives a strong coupling (around 0.1 - 0.25 eV) between the adjacent PBA nanocrystals, mediated by electrostatic interactions.

The increasing popularity of machine learning solutions puts increasing restrictions on this field if it is to penetrate more aspects of life. In particular, energy efficiency and speed of operation is crucial, inter alia in portable medical devices. The Reservoir Computing (RC) paradigm poses as a solution to these issues through foundation of its operation: the reservoir of states. Adequate separation of input information translated into the internal state of the reservoir, whose connections do not need to be trained, allow to simplify the readout layer thus significantly accelerating the operation of the system. In this brief review article, the theoretical basis of RC was first described, followed by a description of its individual variants, their development and state-of-the-art applications in chemical sensing and metrology: detection of impedance changes and ion sensing. Presented results indicate applicability of reservoir computing for sensing and validating the SWEET algorithm experimentally.

This mini review focuses on conductance measurements through molecular junctions containing few tens of molecules, which are fabricated along two approaches: (i) conducting atomic force microscope contacting a self-assembled monolayers on metal surface, and (ii) tiny molecular junctions made of metal nanodot (diameter < 10 nm), covered by fewer than 100 molecules and contacted by a conducting atomic force microscope. In particular, this latter approach has allowed to obtain new results or to revisit previous ones, which are reviewed here: (i) how the electron transport properties of molecular junctions are modified by mechanical constraint, (ii) the role of intermolecular interactions on the shape of conductance histograms of molecular junctions, and (iii) the demonstration that a molecular diode can operate in the microwave regime up to 18 GHz.

Organic electrochemical transistors offer powerful functionalities for biosensors and neuroinspired electronics, with still much to understand on the time dependent behavior of this electrochemical device. Here, we report on distributed element modeling of the impedance of such microfabricated device, systematically performed under a large concentration variation for KCl(aq) and CaCl2(aq). We propose a new model which takes into account three main deviations to ideality, that were systematically observed, caused by both the materials and the device complexity, over large frequency range (1 Hz to 1 MHz). More than introducing more freedom degree, the introduction of these non redundant parameters and the study of their behaviors as function of the electrolyte concentration and applied voltage give a more detailed picture of the OECT working principles. This optimized model can be further useful for improving OECT performances in many applications (e.g. biosensors, neuroinspired devices) and circuit simulations., Comment: Full paper with supporting information

We use a network of molecularly linked gold nanoparticles (NPSAN: nanoparticles self-assembled network) to demonstrate the electrical detection (conductance variation) of a plasmon-induced isomerization (PII) of azobenzene derivatives (azobenzene bithiophene : AzBT). We show that PII is more efficient in a 3D-like (cluster-NPSAN) than in a purely two-dimensional NPSAN (i.e., a monolayer of AzBT functionalized Au NPs). By comparison with usual optical (UV-visible light) isomerization of AzBT, the PII shows a faster (a factor about 10) isomerization kinetics. Possible PII mechanisms are discussed: electric field-induced isomerization, two-phonon process, plasmon-induced resonant energy transfer (PIRET), the latter being the most likely., Comment: Final manuscript with supporting information

Neuromorphic computing and engineering has been the focus of intense research efforts that have been intensified recently by the mutation of Information and Communication Technologies (ICT). In fact, new computing solutions and new hardware platforms are expected to emerge to answer to the new needs and challenges of our societies. In this revolution, lots of candidates technologies are explored and will require leveraging of the pro and cons. In this perspective paper belonging to the special issue on neuromorphic engineering of Journal of Applied Physics, we focus on the current achievements in the field of organic electronics and the potentialities and specificities of this research field. We highlight how unique material features available through organic materials can be used to engineer useful and promising bioinspired devices and circuits. We also discuss about the opportunities that organic electronic are offering for future research directions in the neuromorphic engineering field.

Polyoxometalates (POMs) are unconventional electro-active molecules with a great potential for applications in molecular memories, providing efficient processing steps onto electrodes are available. The synthesis of the organic-inorganic polyoxometalate hybrids [PM$_{11}$O$_{39}$(Sn(C$_6$H$_4$)C$\equiv$C(C$_6$H$_4$)N$_2$)]$^{3-}$ (M = Mo, W) endowed with a remote diazonium function is reported together with their covalent immobilization onto hydrogenated n-Si(100) substrates. Electron transport measurements through the resulting densely-packed monolayers contacted with a mercury drop as a top electrode confirms their homogeneity. Adjustment of the current-voltage curves with the Simmons equation gives a mean tunnel energy barrier of 1.8 eV and 1.6 eV, for the Silicon-Molecules-Metal (SMM) junctions based on the polyoxotungstates (M = W) and polyoxomolybdates (M = Mo), respectively. This follows the trend observed in the electrochemical properties of POMs in solution, the polyoxomolybdates being easier to reduce than the polyoxotungstates, in agreement with lowest unoccupied molecular orbitals (LUMOs) of lower energy. The molecular signature of the POMs is thus clearly identifiable in the solid-state electrical properties and the unmatched diversity of POM molecular and electronic structures should offer a great modularity.

Based on bottom-up assembly of highly variable neural cells units, the nervous system can reach unequalled level of performances with respect to standard materials and devices used in microelectronic. Reproducing these basic concepts in hardware could potentially revolutionize materials and device engineering which are used for information processing. Here, we present an innovative approach that relies on both iono-electronic materials and intrinsic device physics to show pattern classification out of a 12-unit bio-sensing array. We use the reservoir computing and learning concept to demonstrate relevant computing based on the ionic dynamics in 400-nm channel-length organic electrochemical transistor (OECT). We show that this approach copes efficiently with the high level of variability obtained by bottom-up fabrication using a new electropolymerizable polymer, which enables iono-electronic device functionality and material stability in the electrolyte. We investigate the effect of the array size and variability on the performances for a real-time classification task paving the way to new embedded sensing and processing approaches., Comment: Accepted manuscript, Adv. Electron. Mater

In this work, we propose a strategy to sense quantitatively and specifically cations, out of a single organic electrochemical transistor (OECT) device exposed to an electrolyte. From the systematic study of six different chloride salts over 12 different concentrations, we demonstrate that the impedance of the OECT device is governed by either the channel dedoping at low frequency and the electrolyte gate capacitive coupling at high frequency. Specific cationic signatures, which originates from the different impact of the cations behavior on the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer and their conductivity in water, allow their discrimination at the same molar concentrations. Dynamic analysis of the device impedance at different frequencies could allow the identification of specific ionic flows which could be of a great use in bioelectronics to further interpret complex mechanisms in biological media such as in the brain., Comment: Full text and supporting information

Functionalization of polyoxotungstates with organoarsonate co-ligands enabling surface decoration was explored for the triangular cluster architectures of the composition [CoII9(H2O)6(OH)3(p-RC6H4AsVO3)2({\alpha}-PV2WVI15O56)3]25-({Co9(P2W15)3}, R = H or NH2), isolated as Na25[Co9(OH)3(H2O)6(C6H5AsO3)2(P2W15O56)3]86H2O (Na-1) and Na25[Co9(OH)3(H2O)6(H2NC6H4AsO3)2(P2W15O56)3]86H2O (Na-2). The axially oriented para-aminophenyl groups in 2 facilitate the formation of self-assembled monolayers on gold surfaces, and thus provide a viable molecular platform for charge transport studies of magnetically functionalized polyoxometalates. The title systems were isolated and characterized in the solid state and in aqueous solutions, and on metal surfaces. Using conducting tip atomic force microscopy (C-AFM), the energies of {Co9(P2W15)3} frontier molecular orbitals in the surface-bound state were found to directly correlate with cyclic voltammetry data in aqueous solution., Comment: Full paper with figures and supporting information

Oxygen plasma is a widely used treatment to change the surface properties of organic layers. This treatment is particularly interesting to enable the deposition from solution of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) on top of the active layer of organic solar cells or photodetectors. However, oxygen is known to be detrimental to organic devices, as the active layer is very sensitive to oxygen and photo-oxidation. In this study, we aim to determine the impact of oxygen plasma surface treatment on the performance of organic photodetectors (OPD). We show a significant reduction of the sensitivity as well as a change in the shape of the external quantum efficiency (EQE) of the device. Using hole density and conductivity measurements, we demonstrate the p-doping of the active layer induced by oxygen plasma. Admittance spectroscopy shows the formation of trap states approximately 350 meV above the highest occupied molecular orbital of the active organic semiconductor layer. Numerical simulations are carried out to understand the impact of p-doping and traps on the electrical characteristics and performance of the OPDs., Comment: Full paper, figures and supporting information

The polymer (PBDTTT-c) p-doped with the molecular dopant (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concentrations, which limits the performance attainable through organic semiconductor doping. Scanning Electron Microscopy is used to correlate the evolution of hole conductivity and hopping transport activation energy with the formation of aggregates in the layer. Transmission Electron Microscopy with energy-dispersive X-ray analysis along with liquid-state Nuclear Magnetic Resonance experiments are carried out to determine the composition of the aggregates. This study offers an explanation to the limited efficiency of doping at high dopant concentrations and reinforces the need to increase doping efficiency in order to be able to reduce the dopant concentration and not negatively affect conductivity., Comment: Full papers and figures with supporting information

We demonstrate an electrolyte-gated hybrid nanoparticle/organic synapstor (synapse-transistor, termed EGOS) that exhibits short-term plasticity as biological synapses. The response of EGOS makes it suitable to be interfaced with neurons: short-term plasticity is observed at spike voltage as low as 50 mV (in a par with the amplitude of action potential in neurons) and with a typical response time in the range of tens milliseconds. Human neuroblastoma stem cells are adhered and differentiated into neurons on top of EGOS. We observe that the presence of the cells does not alter short-term plasticity of the device., Comment: Full paper, figures and supporting information

Self-assembled functionalized nano particles are at the focus of a number of potential applications, in particular for molecular scale electronics devices. Here we perform experiments of self-assembly of 10 nm Au nano particles (NPs), functionalized by a dense layer of azobenzene-bithiophene (AzBT) molecules, with the aim of building a light-switchable device with memristive properties. We fabricate planar nanodevices consisting of NP self-assembled network (NPSANs) contacted by nanoelectrodes separated by interelectrode gaps ranging from 30 to 100 nm. We demonstrate the light-induced reversible switching of the electrical conductance in these AzBT NPSANs with a record on/off conductance ratio up to 620, an average value of ca. 30 and with 85% of the devices having a ratio above 10. Molecular dynamics simulation of the structure and dynamics of the interface between molecular monolayers chemisorbed on the nano particle surface are performed and compared to the experimental findings. The properties of the contact interface are shown to be strongly correlated to the molecular conformation which in the case of AzBT molecules, can reversibly switched between a cis and a trans form by means of light irradiations of well-defined wavelength. Molecular dynamics simulations provide a microscopic explanation for the experimental observation of the reduction of the on/off current ratio between the two isomers, compared to experiments performed on flat self-assembled monolayers contacted by a conducting cAFM tip., Comment: pdf files : publication and supporting information

Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the architecture level to the basic device level (i.e., investigating the opportunities offered by emerging nanotechnologies to build such systems). Nanodevices, or, more precisely, memory or memristive devices, have been proposed for the implementation of synaptic functions, offering the required features and integration in a single component. In this paper, we demonstrate that the basic physics involved in the filamentary switching of electrochemical metallization cells can reproduce important biological synaptic functions that are key mechanisms for information processing and storage. The transition from short- to long-term plasticity has been reported as a direct consequence of filament growth (i.e., increased conductance) in filamentary memory devices. In this paper, we show that a more complex filament shape, such as dendritic paths of variable density and width, can permit the short- and long-term processes to be controlled independently. Our solid-state device is strongly analogous to biological synapses, as indicated by the interpretation of the results from the framework of a phenomenological model developed for biological synapses. We describe a single memristive element containing a rich panel of features, which will be of benefit to future neuromorphic hardware systems.

Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were taken at selected temperatures in the 77K

Two new thiol compounds with {\sigma}-{\pi}-{\sigma} structure were synthesized and self-assembled on gold substrates. The morphology and the structural characterization of SAMs assessed by infrared spectroscopy, contact angle, XPS, electrochemistry and scanning tunneling microscopy (STM) show the formation of monolayers. SAMs with a terthiophene (3TSH) core as conjugated system are much better organized compared to those with a naphthalene carbodiimide (NaphSH) core as demonstrated by the cyclic voltammetry and STM studies. The surface concentration of 3TSH and NaphSH is respectively three and six times lower than ordered SAMs of pure alkyl chains. A large number of I/V characteristics have been studied either by STS measurements on gold substrates or by C-AFM on gold nanodots. Transition Voltage Spectroscopy (TVS) was used to clearly identify the transport in these partially organized monolayers. The chemical nature of the conjugated system, donor for 3TSH and acceptor for NaphSH, involves an opposite rectification associated to the asymmetrical coupling of the molecular orbitals and the electrodes. The conductance histograms show that the 3TSH junctions are less dispersed than those of NaphSH junctions. This is explained by a better control of the molecular organization in the molecular junctions., Comment: Full paper with supporting information

We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when stimulating the device with input spikes of 1 volt. Both significant facilitating and depressing behaviors of this artificial synapse are observed with a relative amplitude of about 50% and a dynamic response < 200 ms. From a series of in-situ experiments, i.e. measuring the current-voltage characteristic curves in-situ and in real time, during the growth of the pentacene over a network of gold nanoparticles, we elucidate these results by analyzing the relationship between the organic film morphology and the transport properties. This synapstor works at a low energy of about 2 nJ/spike. We discuss the implications of these results for the development of neuro-inspired computing architectures and interfacing with biological neurons., Comment: Full paper with supporting information

Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the latter is linked to the oxygen affinity or the ionic radius, of the X element, several IXZO samples are synthesized by the sol-gel process, with a large number (14) of X elements. The IXZOs are characterized by XPS, SIMS, DRX, and UV-spectroscopy and used for fabricating thin film transistors. Channel mobility and the interface defect density NST, extracted from the TFT electrical characteristics and low frequency noise, followed an increasing trend and the values of mobility and NST are linked by an exponential relation. The highest mobility (8.5 cm2/Vs) is obtained in In-Ga-Zn-O, and slightly lower value for Sb and Sn-doped IXZOs, with NST is about 2E12 cm2/eV, close to that of the In-Zn-O reference TFT. This is explained by a higher electronegativity of Ga, Sb, and Sn than Zn and In, their ionic radius values being close to that of In and Zn. Consequently, Ga, Sb, and Sn induce weaker perturbations of In-O and Zn-O sequences in the sol-gel process, than the X elements having lower electronegativity and different ionic radius. The TFTs with X = Ca, Al, Ni and Cu exhibited the lowest mobility and NST > 1E13 cm2/eV, most likely because of metallic or oxide clusters formation.

A crown-ether dithiol quaterthiophene is synthesized for its covalent immobilization by double fixation on gold surface. While the corresponding dithioester precursor exhibits Pb2+ complexation properties in solution as evidenced by UV-vis spectroscopy and cyclic voltammetry, this Pb2+ affinity is still maintained for monolayers of the dithiol on gold. In addition, current-voltage measurements by Eutectic GaIn drop contact on the monolayer show a significant increase (up to 1.6 x 1E3) of the current at low bias after Pb2+ complexation., Comment: Paper and supplementary information; Advanced Materials (on line, 2012)

We assess the performances of the transition voltage spectroscopy (TVS) method to determine the energies of the molecular orbitals involved in the electronic transport though molecular junctions. A large number of various molecular junctions made with alkyl chains but with different chemical structure of the electrode-molecule interfaces are studied. In the case of molecular junctions with clean, unoxidized electrode-molecule interfaces, i.e. alkylthiols and alkenes directly grafted on Au and hydrogenated Si, respectively, we measure transition voltages in the range 0.9 - 1.4 V. We conclude that the TVS method allows estimating the onset of the tail of the LUMO density of states, at energy located 1.0 - 1.2 eV above the electrode Fermi energy. For oxidized interfaces (e.g. the same monolayer measured with Hg or eGaIn drops, or monolayers formed on a slightly oxidized silicon substrate), lower transition voltages (0.1 - 0.6 V) are systematically measured. These values are explained by the presence of oxide-related density of states at energies lower than the HOMO-LUMO of the molecules. As such, the TVS method is a useful technique to assess the quality of the molecule-electrode interfaces in molecular junctions., Comment: Accepted for publication in J. Phys. Chem C. One pdf file including manuscript, figures and supporting information

Molecular electronics is a fascinating area of research with the ability to tune device properties by a chemical tailoring of organic molecules. However, molecular electronics devices often suffer from dispersion and lack of reproducibility of their electrical performances. Here, we show that water molecules introduced during the fabrication process or coming from the environment can strongly modify the electrical transport properties of molecular junctions made on hydrogen-terminated silicon. We report an increase in conductance by up to three orders of magnitude, as well as an induced asymmetry in the current-voltage curves. These observations are correlated with a specific signature of the dielectric response of the monolayer at low frequency. In addition, a random telegraph signal is observed for these junctions with macroscopic area. Electrochemical charge transfer reaction between the semiconductor channel and H+/H2 redox couple is proposed as the underlying phenomenon. Annealing the samples at 150{\deg}C is an efficient way to suppress these water-related effects. This study paves the way to a better control of molecular devices and has potential implications when these monolayers are used as hydrophobic layers or incorporated in chemical sensors., Comment: Full paper and supplementary information. Accepted for publication in J. Phys. Chem. C

Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long technological challenge requiring well controlled nanometric electrodes. Here we report molecular junctions fabricated on a large array of sub-10 nm single crystal Au nanodots electrodes, a new approach that allows us to measure the conductance of up to a million of junctions in a single conducting Atomic Force Microscope (C-AFM) image. We observe two peaks of conductance for alkylthiol molecules. Tunneling decay constant (beta) for alkanethiols, is in the same range as previous studies. Energy position of molecular orbitals, obtained by transient voltage spectroscopy, varies from peak to peak, in correlation with conductance values., Comment: ACS Nano (in press)

The current-voltage characteristics in Langmuir-Blodgett monolayers of \gamma-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the position of the LUMO and HOMO relative to the Fermi levels of the electrodes as in the Aviram-Ratner mechanism, but also on the profile of the electrostatic potential which is extremely sensitive to where the electroactive part of the molecule lies in the monolayer. This second effect can produce rectification in the direction opposite to the Aviram-Ratner prediction.

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraph-signal noise induced by trapping and detrapping of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FET., Comment: To be published in IEEE Trans. Nanotechnol

Molecular electronics is envisioned as a promising candidate for the nanoelectronics of the future. More than a possible answer to ultimate miniaturization problem in nanoelectronics, molecular electronics is foreseen as a possible way to assemble a large numbers of nanoscale objects (molecules, nanoparticules, nanotubes and nanowires) to form new devices and circuit architectures. It is also an interesting approach to significantly reduce the fabrication costs, as well as the energetical costs of computation, compared to usual semiconductor technologies. Moreover, molecular electronics is a field with a large spectrum of investigations: from quantum objects for testing new paradigms, to hybrid molecular-silicon CMOS devices. However, problems remain to be solved (e.g. a better control of the molecule-electrode interfaces, improvements of the reproducibility and reliability, etc...)., Comment: Review paper. To be published in Proceedings of the IEEE

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y <1.2. We observe a slight bias dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\partial I/\partial V)^2 . A model is proposed showing qualitative agreements with our experimental data.

A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7x1E3 (with an average value of 1.5x1E3) is reported. The "on" conductance state is clearly identified to the cis isomer of the azobenzene moiety. The high "on/off" ratio is explained in terms of photo-induced, configuration-related, changes in the electrode-molecule interface energetics (changes in the energy position of the molecular orbitals with respect to the Fermi energy of electrodes) in addition to changes in the tunnel barrier length (length of the molecules). First principles DFT calculations demonstrate a better delocalization of the frontier orbitals, as well as a stronger electronic coupling between the azobenzene moiety and the electrode for the cis configuration over the trans one. Measured photoionization cross-sections for the molecules in the SAM are close to the known values for azobenzene derivatives in solution., Comment: 1 file with main text, figure and suppementary information

We study the dynamic electrical response of a silicon-molecular monolayer-metal junctions and we observe two contributions in the admittance spectroscopy data. These contributions are related to dipolar relaxation and molecular organization in the monolayer in one hand, and the presence of defects at the silicon/molecule interface in the other hand. We propose a small signal equivalent circuit suitable for the simulations of these molecular devices in commercial device simulators. Our results concern monolayers of alkyl chains considered as a model system but can be extended to other molecular monolayers. These results open door to a better control and optimization of molecular devices., Comment: 1 pdf file including text, figures and tables. Phys. Rev. B, in press