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6. Induced Ferromagnetism in bilayer Hexagonal Boron Nitride (h-BN) on vacancy defects at B and N sites

10. Induced out-of-plane piezoelectricity and giant Rashba spin splitting in Janus WSiZ3H (Z = N, P, As) monolayers toward next-generation electronic devices.

37. Unveiling Versatile Electronic Properties and Contact Features of Metal–Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures

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