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In ferromagnetic oxide epitaxial multilayers, magnetic properties and interlayer coupling are determined by a variety of factors. Beyond the contribution of interlayer exchange coupling, strain and interfacial effects, such as structural reconstructions or charge transfer, play significant roles, resulting in complex magnetic behaviour. In this study the interlayer coupling of ferromagnetic La0.7Sr0.3Mn0.95Ru0.05O3 (LSMRO) layers (8 nm thick) was investigated, when separated by epitaxial spacers of paramagnetic metallic LaNiO3 (LNO), in stacks exhibiting perpendicular magnetic anisotropy. By varying the thickness of the spacer, it was found that the coupling between two LSMRO layers changes from antiferromagnetic (with a 4 unit cell thick LNO spacer) to ferromagnetic (with a 6 unit cells thick LNO spacer). For multilayers comprising five LSMRO layers and a 4 unit cell thick LNO spacer, the antiferromagnetic coupling was preserved. However, the effective magnetic anisotropy changed, causing the magnetization to cant more towards the in-plane direction. This behavior was corroborated by X-ray magnetic circular dichroism (XMCD) investigations at the Mn and Ni L3-edges. The XMCD results indicated that the 4 unit cells thick LNO spacer in the multilayer become magnetically ordered, closely following the magnetization of adjacent LSMRO layers.

Magneto-optic Kerr effect can probe the process of magnetization reversal in ferromagnetic thin films and thus be used as an alternative to magnetometry. Kerr effect is wavelength-dependent and the Kerr rotation can reverse sign, vanishing at particular wavelengths. We investigate epitaxial heterostructures of ferromagnetic manganite, La$_{0.7}$Sr$_{0.3}$Mn$_{0.9}$Ru$_{0.1}$O$_3$, by polar Kerr effect and magnetometry. The manganite layers are separated by or interfaced with a layer of nickelate, NdNiO$_3$. Kerr rotation hysteresis loops of trilayers, with two manganite layers of different thickness separated by a nickelate layer, have intriguing humplike features, when measured with light of 400 nm wavelength. By investigating additional reference samples we disentangle the contributions of the individual layers to the loops: we show that the humps originate from the opposite sense of the Kerr rotation of the two different ferromagnetic layers, combined with the additive behavior of the Kerr signal.

Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the structure may deviate largely from that of the bulk. The temperature-dependent structure of 3 to 44 unit cell thick ferromagnetic SrRuO$_3$ films grown on Nb-doped SrTiO$_3$ substrates are investigated using a combination of high-resolution synchrotron X-ray diffraction and high-resolution electron microscopy. This aims to shed light on the intriguing magnetic and magnetotransport properties of epitaxial SRO layers, subjected to extensive investigations lately. The oxygen octahedral tilts and rotations are found to be strongly dependent on the temperature, the film thickness, and the distance away from the film-substrate interface. As a striking manifestation of the coupling between magnetic order and lattice structure, the Invar effect is observed below the ferromagnetic transition temperature in epitaxial layers as thin as 8 unit cells, similar to bulk ferromagnetic SrRuO$_3$.

A key element to tailor the properties of magnetic multilayers is the coupling between the individual magnetic layers. In case of skyrmion hosting multilayers, coupling of skyrmions across the magnetic layers is highly desirable. Here the magnetic interlayer coupling was studied in epitaxial all-oxide heterostructures of ferromagnetic perovskite SrRuO$_3$ layers separated by spacers of the strong spin-orbit coupling oxide SrIrO$_3$. This combination of oxide layers is being discussed as a potential candidate system to host N\'{e}el skyrmions. First order reversal curve (FORC) measurements were performed in order to distinguish between magnetic switching processes of the individual layers and to disentangle the signal of soft magnetic impurities from the samples$'$ signal. Additionally, FORC investigations enabled to determine whether the coupling between the magnetic layers is ferromagnetic or antiferromagnetic. The observed interlayer coupling strength was weak for all the heterostructures, with SrIrO$_3$ spacers between 2 monolayers and 12 monolayers thick., Comment: 22 pages

We demonstrate the stability of ferromagnetic order of one unit cell thick optimally doped manganite (La0.7Ba0.3MnO3, LBMO) epitaxially grown between two layers of SrRuO3 (SRO) by using x-ray magnetic circular dichroism. At low temperature LBMO shows an inverted hysteresis loop due to the strong antiferromagnetic coupling to SRO. Moreover, above SRO TC the manganite still exhibits magnetic remanence. Density Functional Theory calculations show that coherent interfaces of LBMO with SRO hinder electronic confinement and the strong magnetic coupling enables the increase of the LBMO TC. From the structural point of view, interfacing with SRO enables LBMO to have octahedral rotations similar to bulk. All these factors jointly contribute for stable ferromagnetism up to 130 K for a one unit cell LBMO film.

The proposal that very small N\'eel skyrmions can form in SrRuO$_3$/SrIrO$_3$ epitaxial bilayers and that the electric field-effect can be used to manipulate these skyrmions in gated devices strongly stimulated the recent research of SrRuO$_3$ heterostructures. A strong interfacial Dzyaloshinskii-Moriya interaction, combined with the breaking of inversion symmetry, was considered as the driving force for the formation of skyrmions in SrRuO$_3$/SrIrO$_3$ bilayers. Here, we investigated nominally symmetric heterostructures in which an ultrathin ferromagnetic SrRuO$_3$ layer is sandwiched between large spin-orbit coupling SrIrO$_3$ layers, for which the conditions are not favorable for the emergence of a net interfacial Dzyaloshinskii-Moriya interaction. Previously the formation of skyrmions in the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers was inferred from anomalous Hall resistance loops showing humplike features that resembled topological Hall effect contributions. Symmetric SrIrO$_3$/SrRuO$_3$/SrIrO$_3$ trilayers do not show hump anomalies in the Hall loops. However, the anomalous Hall resistance loops of symmetric multilayers, in which the trilayer is stacked several times, do exhibit the humplike structures, similar to the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers. The origin of the Hall effect loop anomalies likely resides in unavoidable differences in the electronic and magnetic properties of the individual SrRuO$_3$ layers rather than in the formation of skyrmions.

We investigated the structural and magnetic properties of bare SrRuO$_3$ (SRO) ultra-thin films and SrRuO$_3$/SrIrO$_3$/SrZrO$_3$ (SRO/SIO/SZO: RIZ) trilayer heterostructures between 10 K and 80 K, by comparing macroscopic data using magneto-optical Kerr effect (MOKE) and magneto-transport (anomalous Hall effect: AHE), with nanoscale fingerprints when applying non-contact scanning force microscopy (nc-SFM) and magnetic force microscopy (MFM). SRO and RIZ ultra-thin films were epitaxially grown at 650C onto vicinal SrTiO$_3$ (100) single-crystalline substrates to a nominal thickness of 4 and 4/2/2 unit cells (uc), respectively. Our correlated analysis allows associating topographic sample features of overgrown individual layers to their residual magnetization, as is shown here to be relevant for interpreting the macroscopic AHE data. Although the hump-like features in the AHE suggest a magnetically extured skyrmion phase to exist around 55 K associated to the topological Hall effect (THE), both our MOKE and MFM data cannot support this theory. In contrast, our SFM/MFM local-scale analysis finds the local coercive field to be strongly dependent on the effective layer thickness and stoichiometry in both the SRO and RIZ samples, with huge impact on the local band-structure. In fact, it is these variations that in turn mimic a potential THE through anomalies in the AHE resistivity loops., Comment: 16 pages

Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it has been generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. However, the detection is unrelated to the radius of an AFM tip, and in fact, a matter of the switched area. In this work, we demonstrate the direct probing of the polarization charge at the nanoscale using the Positive-Up-Negative-Down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. We successfully probed the polarization charge densities of 73.7 and 119.0 uC/cm2 in ferroelectric nanocapacitors and thin films, respectively. The obtained results show the feasibility of the evaluation of the polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale., Comment: 40 pages, 17 figures

We synthesize sub-THz longitudinal quasi-monochromatic acoustic phonons in a SrTiO$_3$ single crystal using a SrRuO$_3$/SrTiO$_3$ superlattice as an optical-acoustic transducer. The generated acoustic phonon spectrum is determined using ultrafast X-ray diffraction. The analysis of the generated phonon spectrum in the time domain reveals a k-vector dependent phonon lifetime. It is observed that even at sub-THz frequencies the phonon lifetime agrees with the 1/$\omega^2$ power law known from Akhiezer's model for hyper sound attenuation. The observed shift of the synthesized spectrum to the higher $q$ is discussed in the framework of non-linear effects appearing due to the high amplitude of the synthesized phonons.

We present ultrafast x-ray diffraction experiments on thin films of metallic SrRuO$_3$ (SRO) after their excitation with ultrashort intense laser pulses. Depending on the layer thickness, the data exhibit a transient splitting of the (002) SRO Bragg peak evidencing the generation and propagation of sharp acoustic strain waves. These distinct structural dynamics are due to the exceptionally fast electron-phonon relaxation that gives rise to a quasi-instantaneous thermal stress in SRO. The interpretation is corroborated by numerical simulations which show excellent agreement with the experimental findings. Despite the qualitatively different lattice dynamics for different SRO layer thicknesses, we identify a universal evolution of the transient average layer strain. The inferred discrepancy of the thermal stress profile from the excitation profile may hint toward a temperature-dependent effective Gr\"uneisen parameter of SRO., Comment: 10 pages, 6 figures

The 71{\deg} stripe domain patterns of epitaxial BiFeO3 thin films are frequently being explored to achieve new functional properties, dissimilar from the BiFeO3 bulk properties. We show that in-plane switching and out-of-plane switching of these domains behave very differently. In the in-plane configuration the domains are very stable, whereas in the out-of-plane configuration the domains change their size and patterns, depending on the applied switching voltage frequency. This paper has been published in Phys. Status Solidi B (http://dx.doi.org/10.1002/pssb.201248329)

We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls start to propagate into the neighbouring capacitors initiating a significant cross-talk. The propagation paths and the propagated area into the neighbouring capacitors were always the same under repeated runs. The experimental and the simulated results show that the observed cross-talk is related to the capacitor parameters combined with local defects. The results can be helpful to test the reliability of nanoscale ferroelectric memory devices.

Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 films grown on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. Using the additional interface provided by the ferroelectric bilayer structure and changing the sequence of the layers, the dislocation content and domain patterns were varied. The resulting microstructure was investigated by transmission electron microscopy. Macroscopic ferroelectric measurements have shown a large impact of the formation of dislocations and the a/c domain structure on the ferroelectric polarization and dielectric constant. A thermodynamic analysis using the LANDAU-GINZBURG-DEVONSHIRE approach that takes into account the ratio of the thicknesses of the two ferroelectric layers and electrostatic coupling is used to describe the experimental data., Comment: 9 pages, 3 figures

PbZrxTi1-xO3 (PZT) is one of the technologically most important ferroelectric materials. Bulk single-domain single crystals of PZT have never been synthesized for a significant compositional range across the solid-solution phase diagram. This leaves the fundamental properties of PZT under debate. Synthesis of defect-free single crystalline films enables us to unambiguously determine the intrinsic quantities that describe ferroelectric materials, such as spontaneous polarization and dielectric constant. Defect-free single crystalline, strained PbZr0.2Ti0.8O3 thin films were grown by pulsed-laser deposition (PLD) onto vicinal SrTiO3 (001) single crystal substrates. Single crystalline SrRuO3 films fabricated by PLD were employed as bottom electrode. The PZT films have square shape hysteresis loops and remnant polarization values of up to Pr= 110 micro C/cm2, which is considerably higher than the theoretical value predicted for (unstrained) bulk single crystalline PZT of the investigated composition. The films have a dielectric constant eps33= 90 and a piezoelectric coefficient d33= 50 pm/V., Comment: 15 pages, 3 figures