Search

Your search keyword '"Vojáček, Libor"' showing total 22 results
Start Over Author "Vojáček, Libor"
22 results on '"Vojáček, Libor"'

1. Dzyaloshinskii-Moriya interaction chirality reversal with ferromagnetic thickness

Author

Gueneau, Capucine, Ibrahim, Fatima, Fischer, Johanna, Vojáček, Libor, Fillion, Charles-Élie, Pizzini, Stefania, Ranno, Laurent, Joumard, Isabelle, Auffret, Stéphane, Faure-Vincent, Jérôme, Baraduc, Claire, Chshiev, Mairbek, and Béa, Hélène

Subjects
Condensed Matter - Materials Science
Abstract

In ultrathin ferromagnetic films sandwiched between two distinct heavy metal layers or between a heavy metal and an oxide layer, the Dzyaloshinskii-Moriya interaction (DMI) is recognized as being of interfacial origin. Its chirality and strength are determined by the properties of the adjacent heavy metals and the degree of oxidation at the interfaces. Here, we demonstrate that the chirality of the DMI can change solely with variations in the thickness of the ferromagnetic layer - an effect that has not been experimentally observed or explained until now. Our experimental observation in the trilayer system Ta/FeCoB/TaOx is supported by ab initio calculations: they reveal that variations in orbital filling and inter-atomic distances at the interface, driven by the number of ferromagnetic atomic layers, lead to an inversion of DMI chirality. This mechanism takes place for ferromagnetic layers with more than three atomic layers, for which the two interfaces start to be decoupled. We hence propose a new degree of freedom to tune DMI chirality and the associated chiral spin textures by tailoring crystal structure e.g. using strain or surface acoustic waves., Comment: 5 figures + supplementary materials

Published
2025

2. Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface

Author

Krishnia, Sachin, Vojáček, Libor, Gomes, Tristan Da Câmara Santa Clara, Sebe, Nicolas, Ibrahim, Fatima, Li, Jing, Vicente-Arche, Luis Moreno, Collin, Sophie, Denneulin, Thibaud, Dunin-Borkowski, Rafal E., Ohresser, Philippe, Jaouen, Nicolas, Thiaville, André, Fert, Albert, Jaffrès, Henri, Chshiev, Mairbek, Reyren, Nicolas, and Cros, Vincent

Subjects
Condensed Matter - Materials Science
Abstract

Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxidation of the Co|Al interface in the archetypal Platinum-Cobalt-Aluminum oxide system. Here, we observe a double sign change in the anisotropy and about threefold variation in interfacial chiral interaction, influenced not only by the oxidation, but also by the metallic Al thickness. Contrary to previous assumptions about negligible spin-orbit effects at light metal interfaces, we not only observe strong PMA with fully oxidized Al, decreasing and turning negative (in-plane) with less oxygen at the Co|Al interface, we also observe that the magnetic anisotropy reverts to positive (out-of-plane) values at fully metallic Co|Al interface. These findings suggest modification in Co d band via Co|Al orbital hybridization, an effect supported by X-ray absorption spectroscopy and ab initio theory calculations, highlighting the key impact of strain on interfacial mechanisms at fully metallic Co|Al interface., Comment: 6 pages, 5 figures

Published
2024

3. Giant Spin-Orbit Torque in Cr-based Janus Transition Metal Dichalcogenides

Author

Vojáček, Libor, Dueñas, Joaquín Medina, Li, Jing, Ibrahim, Fatima, Manchon, Aurélien, Roche, Stephan, Chshiev, Mairbek, and García, José H.

Subjects
Condensed Matter - Materials Science
Abstract

We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of $\sim 100 \,\text{V} \,\text{nm}^{-1}$ in non-Janus CrTe\textsubscript{2}, completely out of experimental reach. By performing transport simulations on custom-made Wannier tight-binding models, Janus systems are found to exhibit a SOT performance comparable to the most efficient two-dimensional materials, while allowing for field-free perpendicular magnetization switching owing to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices., Comment: 6 pages

Published
2024

4. Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Author

Vojáček, Libor, Chshiev, Mairbek, and Li, Jing

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However, its ferroelectric switching on a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing $ab~initio$ methods, such a mechanism is characterized by an energy barrier of $66.8$ meV/nm$^2$, in a suitable range for retention and switchability. In accompanying the domain wall migration, the net Rashba effect is tunable, as it is a result of competition between layers with opposite electric polarization. These results shed light on the ferroelectric switching mechanism in GeTe, paving stones for the design of potential GeTe-based devices.

Published
2024
Full Text
View/download PDF

5. Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Author

Guillet, Quentin, Vojacek, Libor, Dosenovic, Djordje, Ibrahim, Fatima, Boukari, Herve, Li, Jing, Choueikani, Fadi, Ohresser, Philippe, Ouerghi, Abdelkarim, Mesple, Florie, Renard, Vincent, Jacquot, Jean-Francois, Jalabert, Denis, Okuno, Hanako, Chshiev, Mairbek, Vergnaud, Celine, Bonell, Frederic, Marty, Alain, and Jamet, Matthieu

Subjects
Condensed Matter - Materials Science
Abstract

Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface., Comment: 18 pages, 13 figures and Supplemental Material

Published
2023

6. Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer

Author

Vojáček, Libor, Ibrahim, Fatima, Hallal, Ali, Dieny, Bernard, and Chshiev, Mairbek

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands., Comment: 20 pages, 3 figures and supporting information

Published
2020
Full Text
View/download PDF

9. Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission.

Author

Abdukayumov, Khasan, Mičica, Martin, Ibrahim, Fatima, Vojáček, Libor, Vergnaud, Céline, Marty, Alain, Veuillen, Jean‐Yves, Mallet, Pierre, de Moraes, Isabelle Gomes, Dosenovic, Djordje, Gambarelli, Serge, Maurel, Vincent, Wright, Adrien, Tignon, Jérôme, Mangeney, Juliette, Ouerghi, Abdelkarim, Renard, Vincent, Mesple, Florie, Li, Jing, and Bonell, Frédéric

Published
2024
Full Text
View/download PDF

10. Epitaxial van der Waals heterostructures of Cr2Te3 on two-dimensional materials

Author

Guillet, Quentin, primary, Vojáček, Libor, additional, Dosenovic, Djordje, additional, Ibrahim, Fatima, additional, Boukari, Hervé, additional, Li, Jing, additional, Choueikani, Fadi, additional, Ohresser, Philippe, additional, Ouerghi, Abdelkarim, additional, Mesple, Florie, additional, Renard, Vincent, additional, Jacquot, Jean-François, additional, Jalabert, Denis, additional, Okuno, Hanako, additional, Chshiev, Mairbek, additional, Vergnaud, Céline, additional, Bonell, Frédéric, additional, Marty, Alain, additional, and Jamet, Matthieu, additional

Published
2023
Full Text
View/download PDF

11. Epitaxial van der Waals heterostructures of Cr 2 Te 3 on two-dimensional materials

Author

Guillet, Quentin, Vojáček, Libor, Dosenovic, Djordje, Ibrahim, Fatima, Boukari, Hervé, Li, Jing, Choueikani, Fadi, Ohresser, Philippe, Ouerghi, Abdelkarim, Mesple, Florie, Renard, Vincent, Jacquot, Jean-François, Jalabert, Denis, Okuno, Hanako, Chshiev, Mairbek, Vergnaud, Céline, Bonell, Frédéric, Marty, Alain, Jamet, Matthieu, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Microbiologie Environnementale et Moléculaire (MEM), Institut de Biosciences et Biotechnologies d'Aix-Marseille (ex-IBEB) (BIAM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Institut Universitaire de France (IUF), and Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.)

Subjects
[PHYS]Physics [physics], [SPI]Engineering Sciences [physics]
Abstract

International audience; Abstract The recent discovery of superconductivity in paramagnetic UTe 2 turns spotlight on a serious candidate for spin-triplet state. To draw a complete picture of the superconducting state in UTe 2 precise knowledge of the electronic properties of the 5 f states of Uranium is missing. We report on x-ray absorption and magnetic circular dichroism experiments performed at the U M 4,5 edges at 2.7 K. At ambient pressure the 5 f electron count is found to be in-between 2.6 and 2.8. Partial delocalization of the 5 f electrons is further confirmed by the reduced value of the U orbital to spin magnetic moment ratio. The 5 f count is reduced by as large as 7 percent at the transition to a magnetically ordered state at P c ≈ 1.5 GPa. At pressures above 4 GPa, the 5 f count increases back towards U 3+ in the tetragonal phase. The observed “valence instabilities” and their interplay with magnetism seem to be important ingredients to understand the electronic structure in UTe 2 in different phases.

Published
2023
Full Text
View/download PDF

13. Giant Perpendicular Magnetic Anisotropy Enhancement in MgO -Based Magnetic Tunnel Junction by Using Co / Fe Composite Layer

Author

Vojáček, Libor, Ibrahim, Fatima, Hallal, Ali, Diény, Bernard, Chshiev, Mairbek, SPINtronique et TEchnologie des Composants (SPINTEC), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS), CEITEC BUT, Brno University of Technology, Purkynova 123, 612 00 Brno, Czech Republic, Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, Physics - Applied Physics, Applied Physics (physics.app-ph), ComputingMilieux_MISCELLANEOUS
Abstract

Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands., Comment: 20 pages, 3 figures and supporting information

Published
2021
Full Text
View/download PDF

16. Magnetooptická charakterizace materiálů pro spintroniku

Author

Arregi Uribeetxebarria, Jon Ander, Flajšman, Lukáš, Vojáček, Libor, Arregi Uribeetxebarria, Jon Ander, Flajšman, Lukáš, and Vojáček, Libor

Abstract

Magnetooptický Kerrův jev představuje užitečný nástroj pro zkoumání magnetických vlastností kovových povrchů. Jeho využití při měření procesu přepínání magnetizace vnějším magnetickým polem nám může poskytnout cennou informaci o magnetické anizotropii zkoumané látky. V předložené práci se zabýváme teoretickými aspekty procesu přepínání magnetizace a změny polarizace světla při odrazu od magnetických povrchů. Dále je popsána optická sestava založená na modulaci polarizace světla schopná měřit magnetooptické veličiny s vysokou citlivostí. Tento přístroj byl sestaven modifikací již existující, podobné optické sestavy. Funkčnost zařízení byla ověřena měřeními na tenkých magnetických vrstvách. Získaná data pomáhají odhalit vlastnosti tenkých metamagnetických vrstev z FeRh, materiálu s potenciálními aplikacemi pro spintroniku., The magneto-optical Kerr effect is a useful tool for accessing the magnetic properties of metallic surfaces. The magnetization reversal process controlled by an external applied field and magneto-optically measured can give us information about the anisotropic properties of magnetic systems. In the presented work, we review the theoretical aspects of magnetization reversal and the changes of light polarization upon reflection from a magnetized medium. Description of a functional, high-sensitivity magneto-optical setup based on the polarization modulation technique is given. The apparatus was assembled by modifying an already existing similar setup. Measurements on thin-film magnetic layers prove its functionality and reveal the properties of metamagnetic thin films from FeRh, which is a material with potential applications in spintronics.

17. Magnetooptická charakterizace materiálů pro spintroniku

Author

Arregi Uribeetxebarria, Jon Ander, Flajšman, Lukáš, Vojáček, Libor, Arregi Uribeetxebarria, Jon Ander, Flajšman, Lukáš, and Vojáček, Libor

Abstract

Magnetooptický Kerrův jev představuje užitečný nástroj pro zkoumání magnetických vlastností kovových povrchů. Jeho využití při měření procesu přepínání magnetizace vnějším magnetickým polem nám může poskytnout cennou informaci o magnetické anizotropii zkoumané látky. V předložené práci se zabýváme teoretickými aspekty procesu přepínání magnetizace a změny polarizace světla při odrazu od magnetických povrchů. Dále je popsána optická sestava založená na modulaci polarizace světla schopná měřit magnetooptické veličiny s vysokou citlivostí. Tento přístroj byl sestaven modifikací již existující, podobné optické sestavy. Funkčnost zařízení byla ověřena měřeními na tenkých magnetických vrstvách. Získaná data pomáhají odhalit vlastnosti tenkých metamagnetických vrstev z FeRh, materiálu s potenciálními aplikacemi pro spintroniku., The magneto-optical Kerr effect is a useful tool for accessing the magnetic properties of metallic surfaces. The magnetization reversal process controlled by an external applied field and magneto-optically measured can give us information about the anisotropic properties of magnetic systems. In the presented work, we review the theoretical aspects of magnetization reversal and the changes of light polarization upon reflection from a magnetized medium. Description of a functional, high-sensitivity magneto-optical setup based on the polarization modulation technique is given. The apparatus was assembled by modifying an already existing similar setup. Measurements on thin-film magnetic layers prove its functionality and reveal the properties of metamagnetic thin films from FeRh, which is a material with potential applications in spintronics.

18. Teoretická studie magnetické anizotropie v magnetických tunelových spojích na bázi MgO

Author

Chshiev,, Mairbek, Li,, Jing, Vojáček, Libor, Chshiev,, Mairbek, Li,, Jing, and Vojáček, Libor

Abstract

Magnetický tunelový spoj (MTJ) je spintronická součástka komerčně používaná ve vysoce citlivých čtecích hlavách pevných disků. Počínaje rokem 2007 přispěla k udržení exponenciálního nárůstu hustoty magnetického zápisu. Kromě toho se také stala stavebním kamenem rychlé, odolné, úsporné a nevolatilní magnetické paměti s přímým přístupem (MRAM). Tento nový typ polovodičové paměti, stejně jako je tomu u čtecích hlav disků, využívá tunelové spoje založené na krystalickém oxidu hořečnatém (MgO) spolu s 3d kovovými magnetickými prvky (Fe a Co). Pro zmenšení MTJ a současné udržení dlouhodobé stability paměti proti tepelným fluktuacím je zapotřebí silná magnetická anizotropie ve směru kolmém na rozhraní kov|MgO. V této práci proto nejdříve provedeme analýzu magnetokrystalické anizotropie (MCA) kubického prostorově centrovaného Fe, Co a Ni na MgO pomocí ab initio simulací. Dále bude vyvinut program pro výpočet tvarové anizotropie, která je kromě MCA velmi podstatná, neboť v součtu dávají efektivní anizotropii. Na závěr implementujeme program pro výpočet MCA na základě poruchové teorie druhého řádu. To nám umožní dát pozorované anizotropní vlastnosti do souvislosti přímo s elektronickou strukturou systému (pásovou strukturou a hustotou stavů)., A magnetic tunnel junction (MTJ) is a spintronic device commercially used in highly sensitive hard disk drive reading heads. Since 2007 it has helped to sustain the exponential increase in the magnetic storage density. Moreover, it also became the building block of the fast, durable, power-efficient, and non-volatile magnetic random-access memory (MRAM). Just like reading heads, this new type of solid-state memory uses MTJs based on crystalline magnesium oxide (MgO) along with 3d metallic magnetic elements (Fe and Co). Strong magnetic anisotropy in the direction perpendicular to the metal|MgO interface is needed to provide long-term thermal memory stability as the device is downscaled. This work will analyze the magnetocrystalline anisotropy (MCA) of body-centered cubic Fe, Co, and Ni on MgO using ab initio simulations. Numerical code will be developed to calculate the shape anisotropy, crucial to consider in addition to MCA, because together they add up to the effective anisotropy. Finally, a calculation of MCA based on the second-order perturbation theory will be implemented. This will enable us to link the observed anisotropic properties directly to the system’s electronic structure (the band structure and density of states).

19. Teoretická studie magnetické anizotropie v magnetických tunelových spojích na bázi MgO

Author

Chshiev,, Mairbek, Li,, Jing, Vojáček, Libor, Chshiev,, Mairbek, Li,, Jing, and Vojáček, Libor

Abstract

Magnetický tunelový spoj (MTJ) je spintronická součástka komerčně používaná ve vysoce citlivých čtecích hlavách pevných disků. Počínaje rokem 2007 přispěla k udržení exponenciálního nárůstu hustoty magnetického zápisu. Kromě toho se také stala stavebním kamenem rychlé, odolné, úsporné a nevolatilní magnetické paměti s přímým přístupem (MRAM). Tento nový typ polovodičové paměti, stejně jako je tomu u čtecích hlav disků, využívá tunelové spoje založené na krystalickém oxidu hořečnatém (MgO) spolu s 3d kovovými magnetickými prvky (Fe a Co). Pro zmenšení MTJ a současné udržení dlouhodobé stability paměti proti tepelným fluktuacím je zapotřebí silná magnetická anizotropie ve směru kolmém na rozhraní kov|MgO. V této práci proto nejdříve provedeme analýzu magnetokrystalické anizotropie (MCA) kubického prostorově centrovaného Fe, Co a Ni na MgO pomocí ab initio simulací. Dále bude vyvinut program pro výpočet tvarové anizotropie, která je kromě MCA velmi podstatná, neboť v součtu dávají efektivní anizotropii. Na závěr implementujeme program pro výpočet MCA na základě poruchové teorie druhého řádu. To nám umožní dát pozorované anizotropní vlastnosti do souvislosti přímo s elektronickou strukturou systému (pásovou strukturou a hustotou stavů)., A magnetic tunnel junction (MTJ) is a spintronic device commercially used in highly sensitive hard disk drive reading heads. Since 2007 it has helped to sustain the exponential increase in the magnetic storage density. Moreover, it also became the building block of the fast, durable, power-efficient, and non-volatile magnetic random-access memory (MRAM). Just like reading heads, this new type of solid-state memory uses MTJs based on crystalline magnesium oxide (MgO) along with 3d metallic magnetic elements (Fe and Co). Strong magnetic anisotropy in the direction perpendicular to the metal|MgO interface is needed to provide long-term thermal memory stability as the device is downscaled. This work will analyze the magnetocrystalline anisotropy (MCA) of body-centered cubic Fe, Co, and Ni on MgO using ab initio simulations. Numerical code will be developed to calculate the shape anisotropy, crucial to consider in addition to MCA, because together they add up to the effective anisotropy. Finally, a calculation of MCA based on the second-order perturbation theory will be implemented. This will enable us to link the observed anisotropic properties directly to the system’s electronic structure (the band structure and density of states).

20. Magnetooptická charakterizace materiálů pro spintroniku

Author

Arregi Uribeetxebarria, Jon Ander, Flajšman, Lukáš, Vojáček, Libor, Arregi Uribeetxebarria, Jon Ander, Flajšman, Lukáš, and Vojáček, Libor

Abstract

Magnetooptický Kerrův jev představuje užitečný nástroj pro zkoumání magnetických vlastností kovových povrchů. Jeho využití při měření procesu přepínání magnetizace vnějším magnetickým polem nám může poskytnout cennou informaci o magnetické anizotropii zkoumané látky. V předložené práci se zabýváme teoretickými aspekty procesu přepínání magnetizace a změny polarizace světla při odrazu od magnetických povrchů. Dále je popsána optická sestava založená na modulaci polarizace světla schopná měřit magnetooptické veličiny s vysokou citlivostí. Tento přístroj byl sestaven modifikací již existující, podobné optické sestavy. Funkčnost zařízení byla ověřena měřeními na tenkých magnetických vrstvách. Získaná data pomáhají odhalit vlastnosti tenkých metamagnetických vrstev z FeRh, materiálu s potenciálními aplikacemi pro spintroniku., The magneto-optical Kerr effect is a useful tool for accessing the magnetic properties of metallic surfaces. The magnetization reversal process controlled by an external applied field and magneto-optically measured can give us information about the anisotropic properties of magnetic systems. In the presented work, we review the theoretical aspects of magnetization reversal and the changes of light polarization upon reflection from a magnetized medium. Description of a functional, high-sensitivity magneto-optical setup based on the polarization modulation technique is given. The apparatus was assembled by modifying an already existing similar setup. Measurements on thin-film magnetic layers prove its functionality and reveal the properties of metamagnetic thin films from FeRh, which is a material with potential applications in spintronics.

21. Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe 2 Probed by THz Spintronic Emission.

Author

Abdukayumov K, Mičica M, Ibrahim F, Vojáček L, Vergnaud C, Marty A, Veuillen JY, Mallet P, de Moraes IG, Dosenovic D, Gambarelli S, Maurel V, Wright A, Tignon J, Mangeney J, Ouerghi A, Renard V, Mesple F, Li J, Bonell F, Okuno H, Chshiev M, George JM, Jaffrès H, Dhillon S, and Jamet M

Abstract

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe 2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe 2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe 2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe 2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe 2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe 2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)

Published
2024
Full Text
View/download PDF

22. Controlling the Metamagnetic Phase Transition in FeRh/MnRh Superlattices and Thin-Film Fe 50-x Mn x Rh 50 Alloys.

Author

Horký M, Arregi JA, Patel SKK, Staňo M, Medapalli R, Caha O, Vojáček L, Horák M, Uhlíř V, and Fullerton EE

Abstract

Equiatomic and chemically ordered FeRh and MnRh compounds feature a first-order metamagnetic phase transition between antiferromagnetic and ferromagnetic order in the vicinity of room temperature, exhibiting interconnected structural, magnetic, and electronic order parameters. We show that these two alloys can be combined to form hybrid metamagnets in the form of sputter-deposited superlattices and alloys on single-crystalline MgO substrates. Despite being structurally different, the magnetic behavior of the alloys with substantial Mn content resembles that of the FeRh/MnRh superlattices in the ultrathin individual layer limit. For FeRh/MnRh superlattices, dissimilar lattice distortions of the constituent FeRh and MnRh layers at the antiferromagnetic-ferromagnetic transition cause double-step transitions during cooling, while the magnetization during the heating branch shows a smooth, continuous trend. For Fe 50- x Mn x Rh 50 alloy films, the substitution of Mn at the Fe sites introduces an effective tensile in-plane strain and magnetic frustration in the highly ordered epitaxial films, largely influencing the phase transition temperature T M (by more than 150 K). In addition, Mn acts as a surfactant, enabling the growth of continuous thin films at higher temperatures. Thus, the introduction of hybrid FeRh-MnRh systems with adjustable parameters provides a pathway for the realization of tunable spintronic devices based on magnetic phase transitions.

Published
2022
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results