Search

Your search keyword '"Vogel, Dietmar"' showing total 123 results
Start Over Author "Vogel, Dietmar"
123 results on '"Vogel, Dietmar"'

1. List of contributors

Author

Aalto, Timo, primary, Airaksinen, Veli-Matti, additional, Albert, Stephan Gerhard, additional, Allegato, Giorgio, additional, Amiotti, Marco, additional, Anttila, Olli, additional, Auersperg, Juergen, additional, Bonucci, Antonio, additional, Bose, Indranil Ronnie, additional, Braun, Tanja, additional, Broas, Mikael, additional, Burggraf, J., additional, Cameron, Christopher, additional, Candler, Rob N., additional, Cao, Zhen, additional, Cardoso, André, additional, Chen, Kuo-Shen, additional, Conte, Andrea, additional, Cozma, Adriana, additional, Davis, Cristina E., additional, Dempwolf, Sophia, additional, Dixit, Pradeep, additional, Dost, Michael, additional, Dragoi, Viorel, additional, Eränen, Simo, additional, Fain, Bruno, additional, Figeys, B., additional, Fischer, Andreas C., additional, Flötgen, Christoph, additional, Franssila, Sami, additional, Friedberger, Alois, additional, Fueldner, Marc, additional, Ganchenkova, Maria, additional, Gonzalez, Pilar, additional, Gosálvez, Miguel A., additional, Grimes, Michael, additional, Haapalinna, Atte, additional, Hagelin, Paul, additional, Hammond, Paul, additional, Henttinen, Kimmo, additional, Henttonen, Vesa, additional, Horsley, David, additional, Hoshi, Takeo, additional, Itoh, Satoshi, additional, Jakobsen, Henrik, additional, Jansen, R., additional, Jonsson, Kerstin, additional, Kähler, Dirk, additional, Kannojia, Harindra Kumar, additional, Kattelus, Hannu, additional, Kissinger, Gudrun, additional, Knechtel, Roy, additional, Knese, Kathrin, additional, Kolari, Kai, additional, Koskenvuori, Mika, additional, Kuisma, Heikki, additional, Kulkarni, Amit, additional, Laermer, Franz, additional, Landesberger, Christof, additional, Leinenbach, Christina, additional, LeVasseur, Michael K., additional, Li, Jue, additional, Lin, Yuyuan, additional, Lindner, Paul F., additional, Lodewijks, K., additional, Lofink, Fabian, additional, Longoni, Giorgio, additional, Luber, Sebastian Markus, additional, Mahmud-ul-hasan, M., additional, Mäkinen, Jari, additional, Mäntysalo, Matti, additional, Martin, Devin, additional, Maspero, Federico, additional, Mattila, Toni T., additional, Mauri, Luca, additional, Merz, Peter, additional, Meyer, Doug, additional, Moraja, Marco, additional, Motooka, Teruaki, additional, Müller, Gerhard, additional, Muralt, Paul, additional, Nieminen, Risto M., additional, Niklaus, Frank, additional, Oggioni, Laura, additional, Olkkonen, Juuso, additional, Österlund, Elmeri, additional, Ou, Kuang-Shun, additional, Paloheimo, Jari, additional, Pasanen, Toni P., additional, Paulasto-Kröckel, Mervi, additional, Plach, Thomas, additional, Polizzi, Jean-Philippe, additional, Pressel, Klaus, additional, Putkonen, Matti, additional, Puurunen, Riikka L., additional, Reinert, Wolfgang, additional, Rizzi, Enea, additional, Rochus, V., additional, Ross, Glenn, additional, Rottenberg, X., additional, Sainiemi, Lauri, additional, Savin, Hele, additional, Schenk, Harald, additional, Schikowski, Marc, additional, Schulze, Matthias, additional, Seema, S., additional, Severi, S., additional, Skogström, Lasse, additional, Suga, Tadatomo, additional, Sullivan, Scott, additional, Suni, Tommi, additional, Theuss, Horst, additional, Tilli, Markku, additional, Tilmans, H.A.C., additional, Tittonen, Ilkka, additional, Tofteberg, Hannah, additional, Törmä, Pekka, additional, Tuomikoski, Santeri, additional, Tyholdt, Frode, additional, Uda, Tsuyoshi, additional, Vallin, Örjan, additional, Valzasina, Carlo, additional, Veijola, Timo, additional, Viinikka, Eeva, additional, Vogel, Dietmar, additional, Vogl, Andreas, additional, Vuorinen, Vesa, additional, Westervelde, W.J., additional, Wicht, Sebastian, additional, Wieland, Robert, additional, Winkler, Bernhard, additional, Yobas, Levent, additional, Zanotti, Luca, additional, and Zubel, I., additional

Published
2020
Full Text
View/download PDF

12. Residual stress measurement on a MEMS structure with high-spatial resolution

Author

Sabate, Neus, Vogel, Dietmar, Gollhardt, Astrid, Keller, Jurgen, Cane, Carles, Gracia, Isabel, Morante, Joan R., and Michel, Bernd

Subjects
Microelectromechanical systems -- Design and construction, Residual stresses -- Measurement, Silicon nitride -- Electric properties, Silicon nitride -- Mechanical properties, Engineering and manufacturing industries, Science and technology
Abstract

A new approach to the local measurement of residual stress in microstructures is described in this paper. The presented technique takes advantage of the combined milling-imaging features of a focused ion beam (FIB) equipment to scale down the widely known hole drilling method. This method consists of drilling a small hole in a solid with inherent residual stresses and measuring the strains/displacements caused by the local stress release, that takes place around the hole. In the presented case, the displacements caused by the milling are determined by applying digital image correlation (DIC) techniques to high resolution micrographs taken before and after the milling process. The residual stress value is then obtained by fitting the measured displacements to the analytical solution of the displacement fields. The feasibility of this approach has been demonstrated on a micromachined silicon nitride membrane showing that this method has high potential for applications in the field of mechanical characterization of micro/nano-electromechanical systems. [1634] Index Terms--Microreliability, residual stress.

Published
2007

27. Residual stress measurement on a MEMS structure with high-spatial resolution

Author

Sabaté Vizcarra, María Neus, Vogel, Dietmar, Gollhardt, Astrid, Keller, Jürgen, Cané, Carles, Gràcia, Isabel, Morante, Joan R., Michel, Bernd, Sabaté Vizcarra, María Neus, Vogel, Dietmar, Gollhardt, Astrid, Keller, Jürgen, Cané, Carles, Gràcia, Isabel, Morante, Joan R., and Michel, Bernd

Abstract

A new approach to the local measurement of residual stress in microstructures is described in this paper. The presented technique takes advantage of the combined milling-imaging features of a focused ion beam (FIB) equipment to scale down the widely known hole drilling method. This method consists of drilling a small hole in a solid with inherent residual stresses and measuring the strains/displacements caused by the local stress release, that takes place around the hole. In the presented case, the displacements caused by the milling are determined by applying digital image correlation (DIC) techniques to high resolution micrographs taken before and after the milling process. The residual stress value is then obtained by fitting the measured displacements to the analytical solution of the displacement fields. The feasibility of this approach has been demonstrated on a micromachined silicon nitride membrane showing that this method has high potential for applications in the field of mechanical characterization of micro/nanoelectromechanical systems. © 2007 IEEE.

Published
2007

28. Digital image correlation of nanoscale deformation fields for local stress measurement in thin films

Author

Sabaté Vizcarra, María Neus, Vogel, Dietmar, Gollhardt, Astrid, Marco, J.F., Gràcia, Isabel, Cané, Carles, Michel, Bernd, Sabaté Vizcarra, María Neus, Vogel, Dietmar, Gollhardt, Astrid, Marco, J.F., Gràcia, Isabel, Cané, Carles, and Michel, Bernd

Abstract

In this paper, the application of an in situ stress measurement technique to a silicon nitride thin film deposited onto a thick silicon substrate is presented. The method is based on the measurement of the displacement field originated when a slot is milled into the material under study. Displacements are obtained by digital correlation analysis of scanning electron microscope (SEM) images, whereas milling is performed by ion milling in focused ion-beam equipment. Due to the mechanical constraint introduced by the substrate and the small thickness of the tested layer, the displacements generated by the milling process are in the range 0-5nm, which is one of the smallest displacement ranges measured up to now in a relaxation-based measurement technique. The local stress value determined with this new method is in good agreement with values obtained by a classical method like the wafer bending test. © 2000 IOP Publishing Ltd.

Published
2006

29. Measurement of residual stresses in micromachined structures in a microregion

Author

Sabaté Vizcarra, María Neus, Vogel, Dietmar, Gollhardt, Astrid, Keller, Juergen, Michel, Bernd, Cané, Carles, Gràcia, Isabel, Morante, Juan Roman, Sabaté Vizcarra, María Neus, Vogel, Dietmar, Gollhardt, Astrid, Keller, Juergen, Michel, Bernd, Cané, Carles, Gràcia, Isabel, and Morante, Juan Roman

Abstract

The use of a focused ion beam equipment is reported to find out the in-plane residual stress value of a microelectromechanical system structure by performing a local stress release. The ion beam column is used to mill stress-release slots of a few microns, whereas the scanning electron column captures micrographs of the milled area before and after the stress release process. The displacement component perpendicular to the slot is obtained from digital image correlation analysis of the captured high-resolution micrographs. The fitting of the experimental results with an analytical model together with the independent determination of the Young's modulus allows one to find the residual stress value of the layer under study to a very good accuracy. © 2006 American Institute of Physics.

Published
2006

Catalog

Books, media, physical & digital resources
See catalog results