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Hf0.6Zr0.2Dy0.1Ta0.1O2 thin films were deposited on Si (100) at 600°C using pulsed laser deposition for gate oxide applications because of the compatibility of the elements with the CMOS process. Special emphasis was placed on the properties of Hf0.6Zr0.2Dy0.1Ta0.1O2 thin films within metal-insulator-semiconductor (MIS) structure (Pt/Hf0.6Zr0.2Dy0.1Ta0.1O2/Si) for high-k application in logic devices. The capacitance-voltage and current-voltage measurements are used to determine the electrical characteristics of MIS capacitor structures. The minimum equivalent oxide thickness and maximum dielectric constant of the thin films obtained were as low as 1.2 nm and as high as 35.7 at 10 kHz, respectively. Results on the gate stacks obtained based on the MIS structures appear to be promising as the high-k material for logic devices.