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162 results on '"Vinckier C"'

4. Kinetic investigation of the reaction Sr(1S)+O2+ He in the temperature range from 303 to 968 K

Author

Vinckier, C. and Helaers, J.

Subjects
Recombinant molecules -- Research, Oxidation-reduction reaction -- Research, Chemicals, plastics and rubber industries
Abstract

Research was conducted to examine the trend in the activation energies of the recombination reactions with molecular oxygen. The third-order recombination reaction Sr(1S) + O2 + He -> SrO2 + He experiment was performed in a fast-flow reactor in the temperature and pressure range of 303-968 K and 6-12 Torr, respectively. Results show the occurrence of activation energies using ab initio calculations.

Published
1998

11. Kinetics of the silicon dioxide growth process in afterglows of microwave-induced plasmas.

Author

Vinckier, C., Coeckelberghs, P., Stevens, G., Heyns, M., and De Jaegere, S.

Subjects
*SILICA, *PLASMA gases, *MICROWAVES, *OXIDATION
Abstract

Investigates the kinetics of the silicon dioxide growth process in afterglows of microwave-induced plasmas. Information on the technological application of silicon dioxide layers; List of alternative thermal oxidation techniques; Advantages of the flowing afterglow technique in thermal oxidation.

Published
1987
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12. Abstracts of papers Pharmaceutical and biomedical analysis meeting

Author

Bandhoe, A. U., Paalman, A. C. A., Underberg, W. J. M., Beijnen, J. H., Bekers, O., Otagiri, M., Bult, A., Beuman, Gert, van der Heijden, Jacques, Janss, Jenny, Ceelen, P. R. J., Feenstra-Bielders, G. G. L. M., Groeneveld, D. J., de Boer, D., Rutten, M. J. A., de Jong, E. G., Maes, R. A. A., van Rossum, J. M., de Groot, G., Kopps, R., Savelkoul, T. J. F., van Vloten, P., de Jonag, E. G., van Ooyen, R., Kiffers, J., de Kroon, I. F. I., Langendijk, P. N. J., de Goede, P. N. F. C., De Smet, M., Musch, C., Peeters, A., Buydens, L., Massart, D. L., De Turck, K., Cachet, Th., Hoogmartens, J., Delrue, M., Lannoo, P., Drenth, B. F. H., Beckeringh, F. J., Bosman, J., Feitsma, K. G., van Nijhuisvan Dam, A., Driebergen, R. J., van Gorp, J. A., Ensing, K., Farlam, A., de Jong, G. J., Frel, R. W., Brinkman, U. A. Th., Gerding, T. K., van de Grampel, V. J. M., Niemeijer, N. R., de Zeeuw, R. A., Tepper, P. G., Horn, A. S., Halvax, J. J., Wiese, G., van Bennekom, W. P., Hindriks, Rik, Buydens, Lutgarde, Peeters, Anne, de Smet, Marina, Massart, Luc, Blokland, Aric, Vink, Jan, Keizers, S., de Jong, E. G., Niessen, W. M. A., Verhey, E. R., LaVos, G. F., Tjaden, U. R., van der Greef, J., Ooms, J. A., Haak, G. S. J., Grooten, G., Pattyn, G., Sandra, P., David, F., van Oosterom, A. T., de Bruijn, E. A., Pouwelse, A. V., de Jong, D., Lammers, N. G. F. M., van den Berg, J. H. M., Quintens, I., Roets, E., Reeuwijk, H. J. E. M., Lingeman, H., Keizer, H. J., Rosing, H., Elferink, F., van de Vaart, F. J., Kloeg, P. H. A. M., Sauter, André, Stegehuis, D. S., Reinhoud, N. J., Steijger, O. M., Hilhorst, J. J. L., Holthuis, J. J. M., Underberg-Chitoe, U. K., Meenhorst, P. L., Van den Mooter, G., Hauchecorne, R., Vinckier, C., van der Horst, A., Martens, H. J. M., van der Horst, F. A. L., Post, M. H., van Ginkel, L. A., Zoontjes, P. W., van Blitterswijk, H., Stephany, R. W., van Gijn, R., Bakker, C. H., Koks, C. H. W., Rodenhuis, S., van Opstal, M. A. J., van den Horst, F. A. L., Krabbenborg, P., van Tellingen, O., Woude, H. R. v. d., van Beers, C. J. T., Nooyen, W. J., Varossieau, F. J., Los, G., Nagel, J. D., McVie, J. G., Veen, R. N., Land, J. T. Op 't, Vendrig, D. E. M. M., Teeuwsen, J., Verlaar, F. C. A. M., Trum, T. J. H. M., de Kleijn, J. P., Vervoort, R., Vrieling, M., Maris, F., Hindriks, H., Walhagen, A., Edholm, L. -E., Heeremans, C. E. M., and van der Hoeven, R. A. M.

Published
1989
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15. Effect of membrane filtration on ozonation efficiency for removal of atrazine from surface water

Author

UCL - SST/IMMC/IMAP - Materials and process engineering, Luis Alconero, Patricia, Saquib, M., Vinckier, C., Van Der Bruggen, B., UCL - SST/IMMC/IMAP - Materials and process engineering, Luis Alconero, Patricia, Saquib, M., Vinckier, C., and Van Der Bruggen, B.

Abstract

The kinetics of the decay rate of atrazine from surface water by ozonation was studied at pH 3, 7, and 9 without and with pretreatment with several pressure-driven membrane filtration methods: ultrafiltration (UF), nanofiltration (NF), and reverse osmosis (RO), in order to determine the influence of the feedwater quality on the chemical oxidation of atrazine. First, the atrazine decay rate was determined in surface water (without pretreatment with membranes) in the presence of natural organic matter (NOM). An increase in the atrazine decay rate is observed at pH 3 and 7 in surface water, which can be attributed to the presence of NOM since it acts as OH radicals promoter. However, at pH = 9, the NOM effect vanishes since at this high pH, the advanced oxidation process (AOP) effect becomes far dominant. The efficiency of combining membrane filtration techniques with a subsequent ozonation step for removing atrazine from surface water mainly depends on the pH and the molecular weight fraction of the NOM. Under acidic conditions only UF enhances the atrazine decay rate since this technique does not retain the low molecular weight fraction of the NOM, which acts as OH radical promoter, while removing the high molecular weight fraction of the NOM which acts as a radical scavenger. At pH = 7, the presence of carbonate/bicarbonate ions as OH radical scavengers starts to prevail over the NOM effect. Because RO is the most efficient technique to decrease the carbonate/bicarbonate content, RO enhances the atrazine decay by more than 50%. At pH = 9, the AOP effect becomes by far dominant and annuls the NOM and carbonate/bicarbonate effect. The efficiency of membrane filtration techniques becomes doubtful in view of their marginal effect on the atrazine removal rate and the low statistical confidence levels of the measured kinetic constants under alkaline conditions.

Published
2011

47. HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle.

Author

Nyns, L., Delabie, A., Caymax, M., Heyns, M. M., Van Elshocht, S., Vinckier, C., and De Gendt, S.

Subjects
CHEMICAL vapor deposition, HYDROXYLATION, CHEMICAL reactions, CHEMISORPTION, SILICON, OXIDES, ELECTROCHEMISTRY
Abstract

The growth behavior and film quality of HfO2 deposited by atomic layer deposition (ALD) using HfCl4/H2O depends on the hydroxylation of the exposed surface. In this work, we investigate the dependence of the first HfCl4 chemisorption reaction at 300°C on the OH density of the silicon surface. We observe that the hydroxyl density, and hence the Hf deposition, on O3/H2O wet oxides depends on the initial preparation as well as on the stabilization time in the ALD reactor. A good understanding of the initial nucleation behavior is necessary because wet oxides are used in complementary metal-oxide-semiconductor transistors as surface pretreatment for aggressively scaled HfO2 gate dielectrics. Moreover, the HfCl4 chemisorption reaction is used to estimate the hydroxylated fraction of these surfaces by means of theoretical models. Finally, the temperature dependence of the OH density, as available in the literature, is applied to gain insight into the stoichiometry of the HfCl4 chemisorption reaction. [ABSTRACT FROM AUTHOR]

Published
2008
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49. Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean-room production environments.

Author

Hellin, D., De Gendt, S., Rip, J., and Vinckier, C.

Abstract

In this paper, a number of case studies on the analysis of novel metallic contaminants on conventional and alternative substrates using the technique of total reflection X-ray fluorescence spectrometry (TXRF) is presented. Investigated materials include Si and Ge substrates, high-κ dielectric contaminants, and layers, and Si wafers contaminated with elements from metal gates and Cu interconnects. One focus is on the application and optimization of detection limits in direct TXRF. For the TXRF analysis of contaminants on Si wafers, a general conclusion is that a combination of three excitation sources is needed to cover the whole range of interest: a low-energy excitation (about 5 keV, e.g., WMα, Cr Kα) for the low Z elements such as Na, Mg, and Al, a moderate-energy excitation (10-20 keV, e.g., WLβ, MoKα) for the 3d-transition elements, and a high-energy excitation (25-35 keV, e.g., W, continuum) for the analysis of elements such as Zr, Ru, Mo, and Pd. Also, for the analysis of novel substrates using direct TXRF, a careful selection of the excitation source results in better detection limits. In this way, detection limits at 1010-1011 at/cm2 can be achieved, even for novel contaminants and substrates. As the International Technology Roadmap for Semiconductors (ITRS) requires control below 5×109 at/cm2, the application of a preconcentration procedure such as vapor phase decomposition-droplet collection TXRF (VPD-DC-TXRF) is required. Proper use of this procedure allows the improvement of the detection limits by two to three orders of magnitude, depending on wafer size and chemical collection efficiency. The usability of this preconcentration procedure in combination with TXRF will be demonstrated for noble elements and germanium substrates. [ABSTRACT FROM PUBLISHER]

Published
2005
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