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A unique direct parameter extraction method for the small-signal equivalent-circuit model of InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. $S$ -parameters measured at cut-off bias are used, at first, to extract the distribution factor $X_{0}$ for the base-collector capacitance at zero collector current and the collector-to-emitter overlap capacitance $C_{ceo}$ present in InP DHBT devices. Low-frequency $S$ -parameters measured at normal bias conditions then allows the extraction of the external access resistances $R_{bx}$ , $R_{e}$ , and $R_{cx}$ as well as the intrinsic HBT elements of the device. The terminal inductances of the device are extracted from high frequency $S$ -parameters by employing the intrinsic HBT elements extracted at low-frequency. Compared to other published direct parameter extraction techniques the proposed method is developed specifically for III-V based HBTs and avoids $S$ -parameters measured at the critical open-collector bias condition. The method is applied to an $1.5~\mu{\rm m}$ emitter width InP/GaAsSb/InP DHBT device and leads to excellent prediction of the measured $S$ -parameters in the 250 MHz – 65 GHz frequency range.