Search

Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically that both modes can be coupled to infrared intersubband transitions in GaAs-based multiple quantum wells, yielding an absorbed power gain as high as 5.5, and allowing light absorption at normal incidence. Experimentally, we demonstrate this coupling in a nanoparticle/multiple quantum well structure, where under p-polarization the intersubband absorption is enhanced by a factor of 2.5 and is still observed under s-polarization, forbidden by the usual absorption selection rules. Thus, the integration of CdZnO on GaAs can help improve the figures of merit of quantum well infrared photodetectors, concept that can be extended to other midinfrared detector technologies.

We have designed a synthesis procedure to obtain Cs

We have designed a synthesis procedure to obtain Cs2SnCl6 nanocrystals (NCs) doped with metal ion(s) to emit visible light. Cs2SnCl6 NCs doped with Bi3+, Te4+ and Sb3+ ions emitted blue, yellow and red light, respectively. In addition, NCs simultaneously doped with Bi3+ and Te4+ ions were synthesized in a single run. Combination of both dopant ions together gives rise to the white emission. The photoluminescence quantum yields of the blue, yellow and white emissions are up to 26.5, 28, and 16.6%, respectively under excitation at 350, 390, and 370 nm. Pure white-light emission with CIE chromaticity coordinates of (0.32, 0.33) and (0.32, 0.32) at 340 and 370 nm excitation wavelength, respectively, was obtained. The as-prepared NCs were found to demonstrate a long-time stability, resistance to humidity, and an ability to be well-dispersed in polar solvents without property degradation due to their hydrophilicity, which could be of significant interest for wide application purposes.

High-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques were used to investigate, as a function of the nominal Zn content in the range of 0–50%, the out-of-plane and in-plane crystallographic characteristics of Cd1−xZnxO films grown on r-plane sapphire substrates via atmospheric pressure metal–organic chemical vapor deposition. The study is conducted to search for knowledge relating to the structural details during the transition process from a rock-salt to a wurtzite structure as the Zn content increases in this CdO–ZnO system. It has been found that it is possible to obtain films exhibiting a single (001) cubic orientation with good crystalline quality up to a Zn content of about 10%. For zinc content values higher than 15%, the films become polycrystalline, with two main domains inclined with respect to the plane perpendicular to the surface that contains the c-axis of sapphire. The domains have a tilt that tends asymptotically to ±15° with the Zn content, and the cubic cell presents strong orthorhombic distortion. These two crystallographic domains (orientations) cannot be observed via conventional XRD measurements and are supposed to form part of an intermediate orthorhombic phase in the transition from a rock-salt structure towards a wurtzite structure, which finally appears at higher Zn content values.

We have analysed the growth, morphological and structural characterization of Cd1-xZnxO thin films grown on r-sapphire substrates by atmospheric pressure metal organic chemical vapour deposition, mainly focusing on the Cd-rich rock-salt phase for its promising optical and technological applications. The evolution of the surface morphology and crystalline properties as a function of Zn content has been studied by means of high resolution x-ray diffraction and electron microscopy techniques. Monocrystalline (002) single-phase cubic films were obtained with Zn contents up to 10.4%, and with a low density of dislocations as a consequence of the optimized crystal growth process. Particular attention has been paid to the alloy characterization for compositions when cubic and wurtzite phases coexist.

In this work we propose the use of self-assembled CdZnO nanoparticles as a route to improve power absorption in midinfrared GaAs-based quantum well infrared photodetectors (QWIPs). We experimentally demonstrate low temperature growth of CdZnO nanoparticles on GaAs and characterize their plasmonic response in the mid-IR. Computational analysis of the plasmonic resonances coupled to intersubband transitions in GaAs quantum wells show that intersubband absorption at normal incidence, forbidden by quantum selection rules, can be obtained. Gains in the quantum well power absorption as high as 5.5 are also reported.

The Pb substitution in quantum dots (PQDs) with lesser toxic metals has been widely searched to be environmentally friendly, and be of comparable or improved performance compared to the lead-perovskite. However, the chemical nature of the lead substitute influences the incorporation mechanism into PQDs, which has not been explored in depth. In this work, we analyzed Sr-doping-induced changes in FAPbI3perovskites by studying the optical, structural properties and chemical environment of FAPb1−xSrxI3PQDs. The substitution of Pb by 7 at% Sr allows us to achieve FAPb1−xSrxI3PQDs with 100% PLQY, high stability for 8 months under a relative humidity of 40–50%, andT80= 6.5 months, one of the highest values reported for halide PQDs under air ambient conditions. FAPb0.93Sr0.07I3PQDs also exhibit photobrightening under UV illumination for 12 h, recovering 100% PLQY at 15 days after synthesis. The suppression of structural defects mediated by Sr-doping decreases the non-radiative recombination mechanism. By attempting to increase the Sr content in PQDs, a mixture of 2D nanoplatelets/3D nanocubes has emerged, caused by a high Pb deficiency during the FAPb1−xSrxI3synthesis. This contribution gives a novel insight to understand how the suitable/poor Pb substitution achieved through Sr-doping dictates the photophysical properties of PQDs that may be potentially applicable in optoelectronics.

PbS quantum dots and nanoplatelets (NPLs) are of enormous interest in the development of optoelectronic devices. However, some important aspects of their nature remain unclear. Recent studies have revealed that colloidal PbS NPLs may depart from the rock-salt crystal structure of bulk and form an orthorhombic (Pnma) modification instead. To gain insight into the implications of such a change over the optoelectronic properties, we have synthesized orthorhombic PbS NPLs and determined the lattice parameters by means of selected area electron diffraction measurements. We have then calculated the associated band structure using density functional theory with Perdew–Burke–Ernzerhof functional for solids and with the GW approximation, including spin–orbit interactions. An indirect band gap is found, which may explain the weak luminescence reported in experiments. We derive effective masses for conduction and valence bands and deduce that quantum confinement along the a crystallographic axis (short axis of the NPL) reinforces the indirect band gap but that along b and c axes favors a direct gap instead. Calculations for colloidal nanoplatelets of 1.8 nm thickness, carried out with k·p theory, show that excitonic effects are strong, with binding energies of about 150 meV.

This is the pre-peer reviewed version of the following article: High Optical Performance of Cyan‐Emissive CsPbBr3 Perovskite Quantum Dots Embedded in Molecular Organogels, which has been published in final form at https://doi.org/10.1002/adom.202001786. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions." Perovskite quantum dots (PQDs) have fascinating optoelectronic properties, such as high photoluminescence quantum yield (PLQY) for a broad range of materials, and the possibility to obtain different bandgaps with the same material or halide combinations. Nevertheless, blue‐emissive materials generally present limited PLQY or color instability. Here, two molecular organogels, based on a derivative of an amino acid and succinic acid, are used to embed CsPbBr3 quantum dots, obtaining green and blue emission. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) measurements are performed to confirm that there are no significant changes in the average size of the QDs and the crystal structure. A high near‐unity PLQY is achieved for the blue emission. This contribution opens the door to a postsynthetic treatment for synthesizing blue‐emissive PQDs with high optical performance, which can be attractive for optoelectronic applications.

[EN] Two anomalous broad bands are usually found in the Raman spectrum of bulk and 2D Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, and TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of the anomalous broad bands in tellurides, usually located between 119 and 145 cm(-1). They have been attributed to the intrinsic Raman modes of the sample, to oxidation of the sample, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that of graphene, or to the formation of Te precipitates. In this paper, we provide arguments to demonstrate that such bands correspond to clusters or precipitates of trigonal Te in the form of nanosize or microsize grains or layers that are segregated either inside or at the surface of the samples. Several mechanisms for Te segregation are discussed and sample heating caused by excessive laser power during Raman scattering measurements is emphasized. Besides, we show that anomalous Raman modes related to Se precipitates also occur in selenides, thus providing a general vision for better characterization of selenides and tellurides by means of Raman scattering measurements and for a better understanding of chalcogenides in general., This work has been performed under financial support from the Spanish Ministry of Science, Innovation and Universities, the Spanish Research Agency (AEI), and the European Fund for Regional Development (FEDER) under grants TEC2017-85912C2-2, RED2018-102612-T (MALTA-CONSOLIDER TEAM network) and PID2019-106383 GB-C42/C43. We are also thankful for financial support from Generalitat Valenciana under grant PROMETEO/2018/123 (EFIMAT). The authors also acknowledge Dr Philipp Urban for performing the synthesis of SnBi2Te4.

Transparent Conductive Oxides (TCOs) have been described as a promising alternative to metals for IR plasmonics. However, low propagation of surface plasmons is a major shortcoming limiting the potential of these materials in waveguiding-related applications. As a proof of concept, we propose using polar plasmonic substrates as a method to overcome this issue. In this study, we demonstrate the existence of hybrid phonon-plasmon surface waves in an air-CdZnO-sapphire system and characterize their properties, including an improved propagation distance when compared to a plasmonic-only equivalent system.

Mixed halide perovskites are one of the promising candidates in developing solar cells and light-emitting diodes (LEDs), among other applications, because of their tunable optical properties. Nonetheless, photoinduced phase segregation, by formation of segregated Br-rich and I-rich domains, limits the overall applicability. We tracked the phase segregation with increasing crystalline size of CsPbBr3–xIx and their photoluminescence under continuous-wave laser irradiation (405 nm, 10 mW cm–2) and observed the occurrence of the phase segregation from the threshold size of 46 ± 7 nm. These results have an outstanding agreement with the diffusion length (45.8 nm) calculated also experimentally from the emission lifetime and segregation rates. Furthermore, through Kelvin probe force microscopy, we confirmed the correlation between the phase segregation and the reversible halide ion migration among grain centers and boundaries. These results open a way to achieve segregation-free mixed halide perovskites and improve their performances in optoelectronic devices.

X-ray diffraction has been widely used to characterize the structural properties (strain and structural quality) of semiconductor heterostructures. This work employs hybrid multiple diffraction to analyzer-oriented Zn1−xMgxO layers grown by molecular beam epitaxy on ZnO substrates. In such a low-symmetry material system, additional features appear in symmetric reflection scans, which are described as arising from hybrid multiple diffraction. First, the Bragg conditions necessary for these high-order processes to occur are introduced and applied to explain all the observed satellite reflections, identify the planes that contribute and computea priorithe angles at which they are observed. Furthermore, thanks to this hybrid multiple-diffraction technique, it is possible to determine the layer lattice parameters (in-plane and out-of-plane) in an easy and accurate way by using one single measurement in standard symmetric conditions. The achieved precision is at least as high as that obtained from the combination of symmetric and asymmetric reciprocal space map measurements.

Formamidinium-based perovskite solar cells (PSCs) present the maximum theoretical efficiency of the lead perovskite family. However, formamidinium perovskite exhibits significant degradation in air. The surface chemistry of PbS has been used to improve the formamidinium black phase stability. Here, the use of PbS nanoplatelets with (100) preferential crystal orientation is reported, to potentiate the repercussion on the crystal growth of perovskite grains and to improve the stability of the material and consequently of the solar cells. As a result, a vertical growth of perovskite grains, a stable current density of 23 mA cm(-2), and a stable incident photon to current efficiency in the infrared region of the spectrum for 4 months is obtained, one of the best stability achievements for planar PSCs. Moreover, a better reproducibility than the control device, by optimizing the PbS concentration in the perovskite matrix, is achieved. These outcomes validate the synergistic use of PbS nanoplatelets to improve formamidinium long-term stability and performance reproducibility, and pave the way for using metastable perovskite active phases preserving their light harvesting capability.

The development of new nanophotonic devices requires the understanding and modulation of the propagating surface plasmon and phonon modes arising in plasmonic and polar dielectric materials, respectively. Here we explore the CdZnO alloy as a plasmonic material, with a tunable plasma frequency and reduced losses compared to pure CdO. By means of attenuated total reflectance, we experimentally observe the hybridization of the surface plasmon polariton (SPP) with the surface phonon polariton (SPhP) in the air-CdZnO-sapphire three-layer system. We show how through the precise control of the CdZnO thickness, the resonance frequencies of the hybrid surface plasmon-phonon polariton (SPPP) are tuned in the mid-infrared, and the nature of the hybrid mode turns from a plasmon-like behavior in the thicker films to a phonon-like behavior in the thinnest films. The presence of sapphire phonons not only allows the hybrid mode to be formed, but also improves its characteristics with respect to the bare SPP. The reduced damping of the phonon oscillators allows to reduce the losses of the hybrid mode, enhancing the propagation length above 500 microns, one order of magnitude larger than that of typical SPPs, clearing the path for its application on emerging devices such as plasmonic waveguides., Supporting Information available

Lattice deformation and extended defects such as grain boundaries and dislocations affect the crystalline quality of films and can dramatically change material’s properties. In particular, magnetic and optoelectronic properties depend strongly on these structural and substructural characteristics. In this paper, a combined methodology based on SEM, HRTEM, XRD, and HRXRD measurements is used to determine and assess the structural and substructural characteristics of films. This combined methodology has been applied to Zn1−x Mn x Te films grown on glass substrates by close-spaced vacuum sublimation. Nevertheless the methodology can be applied to a wide variety of materials and could become a useful characterization method which would be particularly valuable in semiconductor growth field. The knowledge of the structural and substructural characteristics can allow not only the optimization of growth parameters, but also the selection of specific samples having the desired characteristics (crystallite size, minimum dislocation content, etc.) for high-quality technological devices.

In this paper, we study the growth of thin films of the Mg1–xCdxO alloy in the Mg-rich range of compositions by using the metal organic chemical vapour deposition (MOCVD) method at low pressure. X-ray diffraction (XRD) has been used to analyse the compound formation and the progressive incorporation of Cd2+ ions into the cubic MgO lattice. Both, layers with a single-cubic phase of Mg1–xCdxO and layers with a phase separation, where Cd1–xMgxO and Mg1–xCdxO coexist, have been studied. Finally, a morphological study of the layers has been carried out by using scanning electron microscopy (SEM) and the layers' composition has been measured by energy dispersive X-ray analysis (EDX). (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

In this work we study the local structure of layered G a 1 − x I n x S e alloys by means of X-ray Absorption. We complement our research with a Raman study. The available alloys have compositions close to the host binaries. The dependence of XANES (X-ray Near Edge Structure) features with synchrotron polarization clearly establishes the substitutional character of the alloying cations. Interstitial atoms, if present, remain under the detection limit of the technique. EXAFS (Extended X-ray Absorption Fine Structure) demonstrates the existence of G a − I n bonds in the alloys. The cation-anion bond-lengths in the alloys remain similar to that of the pure compounds. There is no significant increase of the static disorder. The basic features of Raman spectra are those of the pure compounds, with the Raman peaks shifting continuously as the impurity cation is introduced. New features associated to defects are discussed.

Within the most mesmerizing materials in the world of optoelectronics, mixed halide perovskites (MHPs) have been distinguished because of the tunability of their optoelectronic properties, balancing both the light-harvesting efficiency and the charge extraction into highly efficient solar devices. This feature has drawn the attention of analogous hot topics as photocatalysis for carrying out more efficiently the degradation of organic compounds. However, the photo-oxidation ability of perovskite depends not only on its excellent light-harvesting properties but also on the surface chemical environment provided during its synthesis. Accordingly, we studied the role of surface chemical states of MHP-based nanocrystals (NCs) synthesized by hot-injection (H-I) and anion-exchange (A-E) approaches on their photocatalytic (PC) activity for the oxidation of β-naphthol as a model system. We concluded that iodide vacancies are the main surface chemical states that facilitate the formation of superoxide ions, O2●–, which are responsible for the PC activity in A-E-MHP. Conversely, the PC performance of H-I-MHP is related to the appropriate balance between band gap and a highly oxidizing valence band. This work offers new insights on the surface properties of MHP related to their catalytic activity in photochemical applications.

The effect of plastic deformation on the optical and structural properties of ZnSe crystals has been investigated. The optical properties have been monitored by cathodoluminescence measurements as a function of the deformation degree. Remarkable differences in the defect-related emissions from the most severely deformed areas have been encountered. Deformation of the crystal lattice of ZnSe, associated with slip phenomena, has been studied by means of Electron Backscattered Diffraction and micro-Raman spectroscopy. The relation between the deformation and the optical properties of the ZnSe crystals has been described.

Halide perovskites are revolutionizing the photovoltaic and optoelectronic fields with outstanding performances obtained in a remarkably short time. However, two major challenges remain: the long-term stability and the Pb content, due to its toxicity. Despite the great effort carried out to substitute the Pb by a less hazardous element, lead-free perovskite still remains more unstable than lead-containing perovskites and presents lower performance as well. In this work, we demonstrate the colloidal preparation of Cs–Pb–Sn–Br nanoparticles (NPs) where Sn is incorporated up to 18.8%. Significantly, we have demonstrated that the partial substitution of Pb by Sn does not produce a deleterious effect in their optical performance in terms of photoluminescence quantum yield (PLQY). We observed for the first time a positive effect in terms of enhancement of PLQY when Sn partially substitutes Pb in a considerable amount (i.e., higher than 5%). PLQYs as high as 73.4% have been obtained with a partial Pb replacement of 7% by Sn. We present a systematic study of the synthesis process in terms of different growth parameters (i.e., precursor concentration, time, and temperature of reaction) and how they influence the Sn incorporation and the PLQY. This high performance and long-term stability is based on a significant stabilization of Sn2+ in the NPs for several months, as determined by XPS analysis, and opens an interesting way to obtain less Pb-containing perovskite NPs with excellent optoelectronic properties.

In this paper, we have demonstrated the growth of tin oxide (SnO 2 ) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO 2 thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO 2 films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO 2 thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

ZnO:Mn alloyed nanorods (Mn nominal concentration – 3–5 wt%) were synthesized by using hydrothermal process at an optimized growth temperature of 200 °C and a growth time of 3 h. The XRD, SEM and Raman, FTIR investigations reveal that ZnO:Mn (Mn – 3–5 wt%) retained hexagonal wurtzite crystal structure with nanorod morphology. The HRTEM and SAED analysis confirm the single crystalline nature of hydrothermally grown ZnO and ZnO:Mn (5 wt%) nanorods. The ZnO:Mn nanorods (Mn – 0–5 wt%) displayed optical band gap in the range 3.23–3.28 eV. The blue shift of UV emission peak (PL) from 393 (ZnO) to 386 nm and quenching of photoluminescence emission in ZnO:Mn is due to the Mn incorporation in ZnO lattice. Relative increase in intensity of Raman band at 660 cm−1 with nominal doping of Mn 3–5 wt% in ZnO indicate that defects are introduced in ZnO:Mn system as a result of doping that leads to the quenching of photoluminescence emission at 393 nm.

II-VI oxides ternary alloys have attracted considerable interest of the scientific community due to the possibility of modulating their interesting optoelectronic properties. Despite this interest, MgCdO has been poorly studied. In this work, by using the metal organic chemical vapor deposition method at low pressure, we have analyzed the synthesis of thin films of this alloy. Thus, for a fixed metal-organic precursors content, a change from Mg1-xCdxO (Mg-rich phase) to Cd1-xMgxO (Cd-rich phase) has been induced when decreasing the growth temperature. The temperature range where both phases coexist has been particularly analyzed. Using X-ray diffraction analysis and scanning electron microscopy, a structural and morphological study of the samples has been carried out. In addition, the composition of the alloy has been measured by using energy dispersive X-ray analysis, and the behavior of the lattice parameter as a function of Cd content has been studied.

In this work, the growth of isolated Cd1−xMgxO nanoparticles on r-sapphire substrates is extended to the entire range of Mg content (0 ≤ x ≤ 1) using the spray pyrolysis method. The sizes of the Cd1−xMgxO nanoparticles were in the ranges 4–6 nm and 15–30 nm (with a nanoparticle density of 1010 cm−2). The composition of the nanoparticles was determined using transmission electron microscopy energy dispersive X-ray analysis (TEM-EDAX), while the compound formation was confirmed using X-ray photoelectron spectroscopy. A systematic decrease in the a lattice parameter of Cd1−xMgxO on increasing the Mg content substantiated the successful incorporation of Mg2+ ions into the cubic CdO lattice. Single-phase cubic Cd1−xMgxO nanoparticles were obtained in the range of nominal Mg content 0% to 30% (0 ≤ x ≤ 0.26), whereas a Mg content of about 40% (nominal) forced a phase separation where Cd1−xMgxO and Mg1−xCdxO co-exist (the Mg nominal content was 40% to 90%), providing experimental evidence of the phase separation that exists in the MgO–CdO system. This phase separation was detected using selected area electron diffraction and X-ray diffraction measurements. Cross-sectional transmission electron microscopy analysis shows the growth of a single layer of isolated and crystalline Cd1−xMgxO nanoparticles over the r-sapphire substrate.

The magnetic properties of Mn-doped ZnO (ZnO:Mn) nanorods grown by hydrothermal process at a temperature of 200 °C and a growth time of 3 h have been studied. The samples were characterized by using powder X-ray diffraction with Rietveld refinement, scanning electron microscopy, energy-dispersive X-ray analysis and SQUID magnetometry. Mn (3 wt%) and (5 wt%)-doped ZnO samples exhibit paramagnetic and ferromagnetic behavior, respectively, at room temperature. The spin-glass behavior is observed from the samples with respect to the decrease of temperature. At 10 K, both samples exhibit a hysteresis loop with relatively low coercivity. The room-temperature ferromagnetism in 5 wt% Mn-doped ZnO nanorods is attributed to the increase in the specific area of grain boundaries, interaction between dopant Mn2+ ions substituted at Zn2+ site and the interaction between Mn2+ ions and Zn2+ ions from the ZnO host lattice. M–H curve of hydrothermally grown ZnO:Mn (3 wt%) and ZnO:Mn (5 wt%) nanorods at 10 K.

This work investigates the electronic structure and photoluminescence properties of Co2+-doped ZnO and their pressure and temperature dependences through high-resolution absorption and emission spe...

ZnO nanorods grown on buffered and non buffered sapphire substrates have been investigated by X-ray multiple diffraction using Renninger scans of the ZnO(0001) and ZnO(0003) forbidden reflections. In this technique the diffracted X-ray beam is simultaneously diffracted by several sets of planes, providing information on the broadening in different directions, as well as from nanorods, and from the layer on which they grow. The intensities and angular widths of peaks obtained by azimuthal and omega scans have been analyzed, making a direct comparison with conventional measurements of the full width at half-maximum of symmetric and asymmetric reflections. The analysis leads to establish that the peaks of the Renninger scan are highly sensitive to structural characteristics, providing information related with both the out-plane and in-plane ordering of nanostructured samples with a single scan.

Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 and 500¿K. Studies on these layered semiconductors have increased tremendously in the last years since they have been recently predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies have been done in the recent years in these materials. In this work we summarize the main results of the high-pressure studies performed in this family of semiconductors to date. In particular, we review recent results that address the main characteristics of the pressure-induced electronic topological transition and structural phase transitions observed in this family of compounds. Future high-pressure studies to be performed on these 3D topological insulators are also commented., This study was supported by the Spanish government and EU-FEDER under Grants: MAT2008-06873-C02-02, TEC2011-28076-C02-02, MAT2010-21270-C04-01/03/04, and by MALTA Consolider Ingenio 2010 project (CSD2007-00045). Due acknowledgement is also given to Generalitat Valenciana through projects Prometeo GV2011/035 and ISIC/2012/008. We are also indebted to the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E. P-G., A. M., and P. R-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster.

Nanostructured ZnO layers have been deposited onto SiO 2 /Si substrates by spray pyrolysis, with previously patterned interdigitated gold electrodes. We have then measured the capacitive and resistive response against ambient parameters such as relative humidity and illumination.

The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzite and rock-salt phase separation. We also show that the presence of segregated wurtzite phase in oversaturated thin films phase is responsible for the low-energy absorption tail observed above $x=0.3$ in our Mg$_x$Zn$_{1-x}$O thin films. Our study has also allowed us to extend the concentration dependence of the pressure coefficient of the band gap from the previous limit of $x$ = 0.13 to $x \approx 0.3$ obtaining d$E_g$/d$P$ = 29 meV/GPa for wurtzite with $x \approx 0.3$ and 25 meV/GPa for the segregated $x\approx 0.09$ wurtzite phase., 5 pages, 4 figures

Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 1017 cm−3 and 1018 cm−3, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional CdZn in the ZnO crystal. This research was originally published in the Journal of Applied Physics. © AIP Publishing

By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled MgxZn1−xO quantum dots (size [similar]4–6 nm) in the overall range of compositions 0 ≤ x ≤ 1 on c-sapphire, Si (100) and quartz substrates. Composition of the quantum dots was determined by means of transmission electron microscopy-energy dispersive X-ray analysis (TEM-EDAX) and X-ray photoelectron spectroscopy. Selected area electron diffraction reveals the growth of single phase hexagonal MgxZn1−xO quantum dots with composition 0 ≤ x ≤ 0.32 by using a nominal concentration of Mg in the range 0 to 45%. Onset of Mg concentration about 50% (nominal) forces the hexagonal lattice to undergo a phase transition from hexagonal to a cubic structure which resulted in the growth of hexagonal and cubic phases of MgxZn1−xO in the intermediate range of Mg concentrations 50 to 85% (0.39 ≤ x ≤ 0.77), whereas higher nominal concentration of Mg ≥ 90% (0.81 ≤ x ≤ 1) leads to the growth of single phase cubic MgxZn1−xO quantum dots. High resolution transmission electron microscopy and fast Fourier transform confirm the results and show clearly distinguishable hexagonal and cubic crystal structures of the respective quantum dots. A difference of 0.24 eV was detected between the core levels (Zn 2p and Mg 1s) measured in quantum dots with hexagonal and cubic structures by X-ray photoemission. The shift of these core levels can be explained in the frame of the different coordination of cations in the hexagonal and cubic configurations. Finally, the optical absorption measurements performed on single phase hexagonal MgxZn1−xO QDs exhibited a clear shift in optical energy gap on increasing the Mg concentration from 0 to 40%, which is explained as an effect of substitution of Zn2+ by Mg2+ in the ZnO lattice.

In this paper scanning force microscopy is combined with simple but powerful data processing to determine quantitatively, on a sub-micrometer scale, the orientation of surface facets present on crystalline materials. A high-quality scanning force topography image is used to determine an angular histogram of the surface normal at each image point. In addition to the known method for the assignment of Miller indices to the facets appearing on the surface, a quantitative analysis is presented that allows the characterization of the relative population and morphological quality of each of these facets. Two different CdTe thin films are used as model systems to probe the capabilities of this method, which enables further information to be obtained about the thermodynamic stability of particular crystallographic facets. The method, which is referred to as nanogoniometry, will be a powerful tool to study in detail the surface of crystalline materials, particularly thin films, with sub-micrometer resolution.

Morphology transitions (nanorods–nanowalls and nanorods–nanotubes-layer) were induced in the growth of ZnO nanostructures by metal organic chemical vapor deposition (MOCVD) on c-sapphire, using helium as carrier gas, and dimethylzinc–triethylamine and nitrous oxide as zinc and oxygen sources, respectively. A systematic study of the influence of the VI/II ratio and precursor flow-rates on the morphology of ZnO nanorod arrays has been carried out, taking advantage of the ability of MOCVD to individually control the precursor partial pressures. Growth mechanisms are discussed to understand the evolution of the nanostructures morphology for different growth conditions. In particular, the influence of the gas phase supersaturation on the vertical alignment and aspect ratio of the nanorods is emphasized.

Self-assembled ZnO quantum dots (QDs) have been obtained on different substrates by using the atmospheric spray pyrolysis methodology under well-defined growth conditions. The evolution of size and...

Transparent conducting oxides (TCOs) are widely used in applications from solar cells to light emitting diodes. Here, we show that the metal organic chemical vapor deposition (MOCVD)-grown, rock-salt CdZnO ternary, has excellent potential as a TCO. To assess this compound, we use a combination of infrared reflectance and ultraviolet-visible absorption spectroscopies, together with Hall effect, to determine its optical and electrical transport characteristics. It is found that the incorporation of Zn produces an increment of the electron concentration and mobility, yielding lower resistivities than those of CdO, with a minimum of 1.96 × 10 − 4 Ω · cm for a Zn content of 10%. Moreover, due to a combination of increasing bandgap energy and band filling, the absorption band-edge energy increases from 2.58 eV in CdO up to 2.89 eV for 15% Zn, yielding a largely enhanced transparency in the visible. The low required growth temperatures, together with the scalability of CVD deposition, provide an excellent ground for the integration of this TCO ternary alloy on foreign devices.

The authors report ellipsometrically determined optical properties of epitaxial cadmium oxide thin film grown by metal-organic vapor phase epitaxy on r-plane sapphire substrate. The ellipsometric data were collected from 0.74 to 6.45 eV with the sample at room temperature. Artifacts from the surface overlayers were reduced as far as possible by the premeasurement surface treatment procedures. Complex dielectric function e=e1+ie2 and refractive index N=n+ik spectra were extracted from multilayer modeling of the data with the B-spline functions.

Various one-dimensional (1D) ZnO-based nanostructures, including ZnO nano-wires (NWs) grown using vapour-liquid-solid (VLS) process, ZnO/ZnSe core/shell, nitrogen-doped ZnO and ZnMgO NWs were grown by metalorganic chemical vapour deposition (MOCVD). Transmission electron microscopy (TEM) analysis is presented. For all the samples, a high crystalline quality is observed. Some features are emphasized such as the gold contamination of ZnO wires grown under the metal droplets in the VLS process. It is concluded that MOCVD is a suitable technique for the realization of original ZnO nanodevices.

ZnO micro and nanostructures in the form of tripods, grains, arrows and wires have been grown at temperatures as low as 500–300 ∘ C by a vapour transport method without catalysis and using a well selected value of the carrier gas flow. A transition state between grains and nanowires is reported being characterized by arrow-like structures which are constituted by a pyramidal head and a tail that is growing from the basal plane of the head. In order to understand the effect of growth conditions on the morphology of micro and nanostructures, an analysis of temperature and species concentration conditions has been carried out. In addition two different kinds of substrates have been used, namely quartz and c-sapphire.