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10 results on '"Vera-Marun, I.J."'

1. Colloquium: Spintronics in graphene and other two-dimensional materials

Author

Avsar A., Ochoa H., Guinea F., Zyilmaz B., Van Wees B.J., Vera-Marun I.J. and We thank D. Bercioux, J. Fabian, A. Ferreira, M.?V. Kamalakar, A.?G. Moghaddam, S. Roche, E. Sherman, S.?O. Valenzuela, and I. Žuti?, for the valuable discussions. A.?A. thanks A. Ciarrocchi and J.?F.?G. Marin for the help with the preparation of Fig. 1 . B.?J.?v.?W. acknowledges the support from the Zernike Institute for Advanced Materials, and the Spinoza Prize, awarded by the Netherlands Organisation for Scientific Research (NWO). B.?Ö. acknowledges support from the National Research Foundation, Prime Ministers Office, Singapore, under its NRF Investigatorship (Grant No. NRF-NRFI2018-08) and the Medium-Sized Centre Programme. I.?J.?V.-M. acknowledges the support of the Future and Emerging Technologies (FET) Programme within the Seventh Framework Programme for Research of the European Commission, under FET-Open Grant No. 618083 (CNTQC). We acknowledge the financial support from the European Union’s Horizon 2020 research and innovation program under Grant Agreements No. 696656 and No. 785219 (Graphene Flagship Cores 1 and 2).

Published
2020

3. Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

Author

Ghazaryan, D., Greenaway, M.T., Wang, Z., Guarochico-Moreira, V.H., Vera-Marun, I.J., Yin, J., Katsnelson, M.I., Novoselov, K.S., Misra, A., Ghazaryan, D., Greenaway, M.T., Wang, Z., Guarochico-Moreira, V.H., Vera-Marun, I.J., Yin, J., Katsnelson, M.I., Novoselov, K.S., and Misra, A.

Abstract

Contains fulltext : 195539.pdf (preprint version ) (Open Access)

Published
2018

4. Magnetic Tunnel Junctions With $\hbox{Co:TiO}_{2}$ Magnetic Semiconductor Electrodes

Author

Lee, Y.J., Abhishek Kumar, A.K., Kumar, A., Vera Marun, I.J., de Jong, Machiel Pieter, and Jansen, R.

Subjects
Materials science, EWI-19221, Condensed matter physics, Spintronics, METIS-279129, Doping, La0.67Sro.33MnO3, Magnetic semiconductor, Cobalt-doped TiO2, magnetic tunnel junction, IR-75549, Electronic, Optical and Magnetic Materials, Paramagnetism, Tunnel magnetoresistance, Ferromagnetism, Charge carrier, Electrical and Electronic Engineering, Quantum tunnelling, magnetic semiconductor
Abstract

Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO2, while the junction resistance increases strongly. This suggests that the ultrathin Co:TiO2 is a paramagnetic insulator that acts as an additional tunnel barrier, in contrast to thick (180 nm) layers grown under comparable conditions, which exhibit metallic impurity band conduction and room-temperature ferromagnetism.

Published
2010
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5. Tunneling magnetoresistance with positive and negative sign in La0.67Sr0.33MnO3/SrTiO3/Co junctions

Author

Vera Marun, I.J., Postma, F.M., Lodder, J.C., and Jansen, R.

Subjects
METIS-247031, IR-61960, EWI-11219
Abstract

We have investigated the effects of modification of the SrTiO3 /Co interface as well as the SrTiO3 barrier on the tunnel magnetoresistance TMR of La0.67Sr0.33MnO3 /SrTiO3 /Co junctions. Modification was realized by the introduction of one atomic layer of either TiO2 or SrO at the SrTiO3 /Co interface. Barriers with different oxygen content were also studied. In these structures we have observed positive as well as negative TMR, with a trend towards positive TMR for junctions with interfacial SrO and/or more oxygen-deficient barriers. This work offers more insight into the SrTiO3 /Co tunnel spin polarization and its sign.

Published
2007
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6. Spin Heat Accumulation Induced by Tunneling from a Ferromagnet

Author

Vera-Marun, I.J., Wees, B.J. van, Jansen, R., Vera-Marun, I.J., Wees, B.J. van, and Jansen, R.

Abstract

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

Published
2014

7. Quantum Hall transport as a probe of capacitance profile at graphene edges

Author

Vera-Marun, I.J., Zomer, P.J., Veligura, A., Guimaraes, M.H.D., Visser, L., Tombros, N., Elferen, H.J. van, Zeitler, U., Wees, B.J. van, Vera-Marun, I.J., Zomer, P.J., Veligura, A., Guimaraes, M.H.D., Visser, L., Tombros, N., Elferen, H.J. van, Zeitler, U., and Wees, B.J. van

Abstract

Contains fulltext : 111398.pdf (publisher's version ) (Open Access)

Published
2013

8. Field-induced quantum hall ferromagnetism in suspended bilayer graphene

Author

Elferen, H.J. van, Veligura, A., Kurganova, E.V., Zeitler, U., Maan, J.C., Tombros, N., Vera-Marun, I.J., Wees, B.J. van, Elferen, H.J. van, Veligura, A., Kurganova, E.V., Zeitler, U., Maan, J.C., Tombros, N., Vera-Marun, I.J., and Wees, B.J. van

Abstract

Contains fulltext : 93859.pdf (publisher's version ) (Open Access)

Published
2012

10. Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

Author

Ghazaryan, D., Greenaway, M.T., Wang, Z., Guarochico-Moreira, V.H., Vera-Marun, I.J., Yin, J., Liao, Y., Morozov, S.V., Kristanovski, O., Lichtenstein, A.I., Katsnelson, M.I., Withers, F., Mishchenko, A., Eaves, Laurence, Geim, A.K., Novoselov, K.S., Misra, A., Ghazaryan, D., Greenaway, M.T., Wang, Z., Guarochico-Moreira, V.H., Vera-Marun, I.J., Yin, J., Liao, Y., Morozov, S.V., Kristanovski, O., Lichtenstein, A.I., Katsnelson, M.I., Withers, F., Mishchenko, A., Eaves, Laurence, Geim, A.K., Novoselov, K.S., and Misra, A.

Abstract

Van der Waals heterostructures, which are composed of layered two-dimensional materials, offer a platform to investigate a diverse range of physical phenomena and could be of use in a variety of applications. Heterostructures containing two-dimensional ferromagnets, such as chromium triiodide (CrI3), have recently been reported, which could allow two-dimensional spintronic devices to be developed. Here we study tunnelling through thin ferromagnetic chromium tribromide (CrBr3) barriers that are sandwiched between graphene electrodes. In devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localized states. In contrast, in the devices with ferromagnetic barriers, the major tunnelling mechanisms are the emission of magnons at low temperatures and the scattering of electrons on localized magnetic excitations at temperatures above the Curie temperature. Magnetoresistance in the graphene electrodes further suggests induced spin–orbit coupling and proximity exchange via the ferromagnetic barrier. Tunnelling with magnon emission offers the possibility of spin injection.

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