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GdMnO3 (GMO) thin films were sputtered using an RF Magnetron unit on Quartz substrates. Films post-annealed for 12 h at 750 ℃ and 850 ℃ confirm the orthorhombic structure with pbnm symmetry. The increase in temperature of the films increases their crystallinity and grain size. Raman study substantiates the results of XRD. Annealing at higher temperatures shows a broadening in Raman peaks along with a right shift in the active modes. XPS anlaysis revelas the presense of Mn with Mn3+ and Mn4+ oxidation state. The AFM topography images show increased values in average roughness, root mean square roughness, Kurtosis, skewness and Shannon entropy as a function of rising temperature values. The second-order transition from the incommensurate antiferromagnetic phase to the canted A-type commensurate antiferromagnetic phase is observed. The magnetization value is found to be higher for the film annealed at 850 ℃, whereas the film annealed at 750 ℃ exhibits spin glass behaviour. [ABSTRACT FROM AUTHOR]

Multifuctional materials are promising for the ever-increasing demand in next-generation miniaturized and integrated multiple-state memory devices. In this regard, new double perovskite Y2FeMnO6 which combines the unique properties of both YFeO3 and YMnO3 single perovskites in a single compound is studied. The individual property of B and B'cations greatly influence the physiochemical nature of the double perovskite, thus the effect of the interaction of Fe and Mn ions on the properties of double perovskite Y2FeMnO6, is investigated. Double perovskite Y2FeMnO6 is synthesized through solid-state reaction method with subsequent sintereing. Distorted orthorhombic Pbnm structure with the random ordering of Fe and Mn cations at the octahedral sites is confirmed. Raman phonon modes and UV transitions substantiate the orthorhombic structure. The influence of Mn3+ ions on Fe3+ exchange integral paths leads to a shift of Neel temperature nearer to room temperature. A strong frequency-dependent dielectric dispersion is observed, attributed to Maxwell–Wagner type. Temperature-dependent relaxations are evidenced in the vicinity of magnetic transition, proving the influence of electric and magnetic ordering on each other. These observations open a route to achieve magnetoelectric effect at higher temperatures in Y2FeMnO6, making it new plausible material in memory device manufacturing. [ABSTRACT FROM AUTHOR]

Novel functional materials with competing degrees of freedom have potential breakthrough in the research and development of memory devices and spintronics. In this perspective, double perovskite provides flexible selection of cations and invoke keen interest for technological applications. In this report rare earth oxide material, Nd2FeMnO6 double perovskite have been investigated. Nd2FeMnO6 double perovskite was conventionally synthesized via solid state reaction method followed by sintering at high temperature of 1200 °C. Rietveld refined X-ray diffractograms establish the crystallization of the Nd2FeMnO6 system to be orthorhombic distorted structure having Pbnm space group and Fe/Mn cations being randomly arranged at B and B’ sites in the oxygen octahedra. The vibrational modes corresponding to the Fe and Mn cations in the Raman study substantiate the blending of NdMnO3 and NdFeO3 sublattices in Nd2FeMnO6 double perovskite. XPS measurement evidence the oxidation state of Fe and Mn ions in the oxygen octahedra to be + 3. Magnetic studies reveal room temperature antiferromagnetic ordering in Nd2FeMnO6 with a Neel transition at 505 K, are attributed to the Fe3+–O–Mn3+ and Mn3+–O–Mn3+ exchange integral chains. Low temperature ZFC/FC curves mark the appearance of thermomagnetic irreversibility at 90 K caused by the magnetic anisotropy of Jahn-Teller Mn3+ cations. Dielectric studies disclose an abrupt change in the dielectric constant at the vicinity of the Neel temperature for all measured frequencies, evidencing the existence of magnetodielectricity in Nd2FeMnO6 double perovskite. [ABSTRACT FROM AUTHOR]

Rare-earth element dysprosium (Dy)-doped SnO2 plays a crucial role in optoelectronics due to its tunable emission property in the visible region. Using simple spray pyrolysis process, trivalent rare-earth Dy (0–5 wt%) is successfully incorporated into the SnO2 lattice as Dy-doped SnO2 (DTO) thin films. X-ray diffraction measurements indicate that the films are considerably textured. Binding energy and elemental charge state are explored using X-ray photoelectron spectroscopy. Optical transmittance of 88.17% and band gap of 3.99 eV is observed for 2 wt% Dy-doped (DTO2) film. Among all the doped films, DTO2 film shows higher hydrophilicity (contact angle 70.7°) due to higher surface roughness (5.71 nm), which is beneficial for photocatalytic activity. The DTO2 film also shows highest carrier concentration (1.8 × 1019 cm−3) and electrical conductivity (3.19 Scm−1). Although, the electrical sheet resistance of the DTO films is high, it can be fine-tuned by further careful optimization of several deposition and/or doping parameters. It is observed that 2 wt% Dy doping into the SnO2 lattice aids the tunability of its optical and electrical properties according to device requirements. Photocatalytic activity of all the spray-pyrolyzed thin films is investigated by degrading methylene blue (MB) dye. The degradation efficiency is found to be highest for DTO2 film (~ 86% for 240 min) under visible LED light irradiation supported by a defect mediated mechanism. [ABSTRACT FROM AUTHOR]

An organization's ability to recruit, assess and choose the best candidates with the necessary abilities, expertise, and expertise to support its stated objectives and goals is crucial to its success. A methodical approach that starts with a clear comprehension of the company's requirements and wants for a specific role is necessary for effective candidate selection. In line with the strategic goals of the organisation, this process entails developing descriptions of roles, identifying essential abilities, and establishing hiring requirements. [ABSTRACT FROM AUTHOR]