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Optoelectronic devices combining single-layer graphene (SLG) and colloidal semiconducting nanocrystal (NC) heterojunctions have recently gained significant attention as efficient hybrid photodetectors. While most research has concentrated on systems using heavy metal-based semiconductor NCs, there is a need for further exploration of environmentally friendly nanomaterials, such as Cu2-xS. Chemical ligands play a crucial role in these hybrid photodetectors, as they enable charge transfer between the NCs and SLG. This study investigates the photoresponse of an SLG/Cu2-xS NCs heterojunction, comparing the effect of two short molecules-tetrabutylammonium iodide (TBAI) and 3,4-dimethylbenzenethiol (DMBT)-as surface ligands on the resulting structures. We have analysed charge transfer at the heterojunctions between SLG and the Cu2-xS NCs before and after modification with TBAI and DMBT using Raman spectroscopy and transconductance measurements under thermal equilibrium. The photoresponse of two hybrid devices based on three layers of Cu2₋xS NCs, deposited in one case on SLG/Cu2-xS/TBAI (TBAI-only device) and in the other on SLG/Cu2-xS/DMBT (DMBT + TBAI device), with a TBAI treatment applied, for both, after each layer deposition, has been evaluated under 450 nm laser diode illumination. The results indicate that the TBAI-only device exhibited a significant increase in photocurrent (4 μA), with high responsivity (40 mA/W) and fast response times (

Abstract: Understanding the behavior of water-immersed membranes in the megahertz range is critical to develop novel acoustic metamaterials compatible with biomedical ultrasound applications. Herein, we study the influence of water on the resonance frequency and quality factor near the megahertz range of silicon nitride membranes fully immersed in water using laser Doppler vibrometry. The resonance frequency of silicon nitride membranes significantly decreases in water compared to air. For a 40 µm wide membrane, the resonance frequency is reduced from 11.2 MHz in air to 1.24 MHz after immersion in water, which is confirmed by finite element method simulations. Our results indicate that the water mass loading plays a major role in the resonance frequency reduction, with a ratio of water mass to membrane mass of m w a t e r / m m e m b r a n e ∼ 102 and NAVMI factors of Γ∼1.3. We attribute the main losses to acoustic radiation with small contributions from viscous damping. We estimate that silicon nitride membranes with widths below 50 µm are required to build negative metamaterials operating above 1 MHz. The large NAVMI factors suggest strong coupling between membrane motion and acoustic waves in water, which is important to develop metamaterials able to manipulate acoustic fields.

Optoelectronic devices combining single-layer graphene (SLG) and colloidal semiconducting nanocrystal (NC) heterojunctions have recently gained significant attention as efficient hybrid photodetectors. While most research has concentrated on systems using heavy metal-based semiconductor NCs, there is a need for further exploration of environmentally friendly nanomaterials, such as Cu2−xS. Chemical ligands play a crucial role in these hybrid photodetectors, as they enable charge transfer between the NCs and SLG. This study investigates the photoresponse of an SLG/Cu2−xS NCs heterojunction, comparing the effect of two short molecules—tetrabutylammonium iodide (TBAI) and 3,4-dimethylbenzenethiol (DMBT)—as surface ligands on the resulting structures. We have analysed charge transfer at the heterojunctions between SLG and the Cu2−xS NCs before and after modification with TBAI and DMBT using Raman spectroscopy and transconductance measurements under thermal equilibrium. The photoresponse of two hybrid devices based on three layers of Cu2₋xS NCs, deposited in one case on SLG/Cu2−xS/TBAI ("TBAI-only" device) and in the other on SLG/Cu2−xS/DMBT ("DMBT + TBAI" device), with a TBAI treatment applied, for both, after each layer deposition, has been evaluated under 450 nm laser diode illumination. The results indicate that the TBAI-only device exhibited a significant increase in photocurrent (4 μA), with high responsivity (40 mA/W) and fast response times (<1 s), while the DMBT + TBAI device had lower photocurrent (0.2 μA) and responsivity (2.4 μA), despite similar response speeds. The difference is attributed to DMBT's π–π interactions with SLG, which enhances electronic coupling but reduces SLG's mobility and responsivity. [ABSTRACT FROM AUTHOR]

The diffusion length of quantum dot (QD) films is a critical parameter to improve the performance of QD-based optoelectronic devices. The dot-to-dot hopping transport mechanism results in shorter diffusion lengths compared to bulk solids. Herein, we present an experimental method to measure the diffusion length in PbS QD films using single layer graphene as a charge collector to monitor the density of photogenerated carriers. By producing devices with different thicknesses, we can construct light absorption and photocarrier density profiles, allowing extracting light penetration depths and carrier diffusion lengths for electrons and holes. We realized devices with small (size: ∼2.5 nm) and large (size: ∼4.8 nm) QDs, and use λ = 532 nm and λ = 635 nm wavelength illumination. For small QDs, we obtain diffusion lengths of 180 nm for holes and 500 nm for electrons. For large QDs, we obtain diffusion lengths of 120 nm for holes and 150 nm for electrons. Our results show that films made of small QD films have longer diffusion lengths for holes and electrons. We also observe that wavelength illumination may have a small effect, with electrons showing a diffusion length of 500 and 420 nm under λ = 532 nm and λ = 635 nm illumination, respectively, which may be due to increased interactions between photocarriers for longer wavelengths with deeper penetration depths. Our results demonstrate an effective technique to calculate diffusion lengths of photogenerated electrons and holes and indicate that not only QD size but also wavelength illumination can play important roles in the diffusion and electrical transport of photocarriers in QD films. [ABSTRACT FROM AUTHOR]

Lead sulfide quantum dots (QDs) have been widely used for various optoelectronic devices due to their high absorption coefficient and tunable bandgap. However, the low mobility of QD films results in poor charge collection and device performance. By combining QDs with graphene into hybrid graphene/QD photodetectors, photocarriers from QDs are transferred to graphene, improving charge collection and transport, drastically increasing the photoresponsivity. Herein, we carry a systematic analysis on how critical tuning parameters such as QD size and QD film thickness affect responsivity, spectral response, and time response. We report the absorption coefficient, refractive index (n, k), penetration depth, and energy bandgap of PbS QDs of different sizes. We study systematically how the photocurrent, photoresponsivity, time response, and power density dependence vary with QD size in hybrid Gr/QD. The bandgap of lead sulfide quantum dots was size-tuned between 0.86 and 1.39 eV. The time response shows that subsecond modulation can be achieved for different QD sizes with a responsivity up to 107 A/W at power densities of 10−5 mW/cm2. We also studied how the performance of the photodetectors is affected by the thickness, discussing the limitations on the thickness by the compromise between light absorption and charge collection. We describe how the optical response shifts toward the infrared as QD films get thicker. Time responses below 1 s are obtained for graphene/QD devices with thickness from 150 nm to 1 μm. This systematic study provides important guidelines to design hybrid graphene/QD photodetectors and tune their spectral response and performance. [ABSTRACT FROM AUTHOR]

Hybrid graphene and quantum dots (QDs) photodetectors merge the excellent conductivity and ambipolar electric field sensitivity of graphene, with the unique properties of QDs. The photoresponsivity of these devices depends strongly on the charge transfer at the graphene/QDs interface. Here 1‐pyrene butyric acid (PBA)‐coated PbS QDs with single layer graphene (SLG) are used to investigate the effect of pyrene as a π–π mediator to enhance charge transfer at the SLG/QDs junction under illumination. The surface chemistry at the QD–QD and SLG/QD interface is studied with the conventional tetrabutylammonium iodide (TBAI) QD linker. The hybrid SLG/QD photodetectors with PBA as a SLG‐QD linker demonstrate a photoresponse up to 30% higher than that recorded for devices where only TBAI is used, due to the strong electron coupling between SLG and QDs. Transconductance measurements show that PBA provokes electron depletion in SLG ascribed to the tendency to delocalize the QDs holes, favoring their transfer to SLG. This surface ligand is found to improve the interaction between the QDs light absorbers and the SLG charge collector, leading to an increased photodetection response. This demonstrates that ligand engineering can enhance charge dynamics and boost the performance of the hybrid device. [ABSTRACT FROM AUTHOR]

We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date. [ABSTRACT FROM AUTHOR]

Theoptical transparency and high electron mobility of graphene make itan attractive material for photovoltaics. We present a field-effectsolar cell using graphene to form a tunable junction barrier withan Earth-abundant and low cost zinc phosphide (Zn3P2) thin-film light absorber. Adding a semitransparent top electrostaticgate allows for tuning of the graphene Fermi level and hence the energybarrier at the graphene-Zn3P2junction, goingfrom an ohmic contact at negative gate voltages to a rectifying barrierat positive gate voltages. We perform current and capacitance measurementsat different gate voltages in order to demonstrate the control ofthe energy barrier and depletion width in the zinc phosphide. Ourphotovoltaic measurements show that the efficiency conversion is increased2-fold when we increase the gate voltage and the junction barrierto maximize the photovoltaic response. At an optimal gate voltageof +2 V, we obtain an open-circuit voltage of Voc= 0.53 V and an efficiency of 1.9% under AM 1.5 1-sun solarillumination. This work demonstrates that the field effect can beused to modulate and optimize the response of photovoltaic devicesincorporating graphene. [ABSTRACT FROM AUTHOR]