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122 results on '"Vanhoenacker D"'

10. Non-linear relationship between intensity of plant-animal interactions and selection strength

Author

Vanhoenacker, D., Ågren, Jon, Ehrlén, J., Vanhoenacker, D., Ågren, Jon, and Ehrlén, J.

Abstract

The shape of the relationship between intensity of biotic interactions and strength of selection is important for spatial variation in selection, but is little explored. We quantified interactions and selection in 69 populations of the short-lived herb Primula farinosa. As predicted because of saturation and depletion effects, the strength of selection on a discrete and on a continuously varying floral display trait were in several cases significantly non-linearly related to the mean intensity of mutualistic and antagonistic interactions. Strength of selection was strongest at low levels of fruit initiation and at high intensities of seed predation. Seed predation varied more among populations than did fruit initiation and could explain a larger proportion of the among-population variation in strength of selection. Our results support the contention that interaction intensity affects selection strength, and suggests that for mutualistic and antagonistic interactions that can be saturated or depleted, this relationship is sometimes non-linear.

Published
2013
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11. 70 GHZ FMAX fully-depleted SOI MOSFET’S for low-power wireless applications

Author

Raynaud, C., Faynot, O., Pelloie, J.-L., Tabone, C., Grouillet, A., Martin, F., Dambrine, G., Vanmackelberg, M., Picheta, L., Mackowiak, E., Brut, H., Llinares, P., Sevenhans, J., Compagne, E., Fletcher, G., Flandre, D., Dessard, V., Vanhoenacker, D., and Raskin, J.-P.

Subjects
ING-INF/01 Elettronica
Abstract

For the first time, excellent microwave performances including high frequency noise are ported for 0.25 micron gate channel length Fully Depleted (FD) Silicon-on-Insulator (SOI) MOSFET’s: a maximum extrapolated oscillation frequency (fmax) of 70 GHz and the state-of-the-art minimum noise figure (NFmin) of 0.8 dB with high available associated gain (Gass) of 13 dB at 6 GHz, at Vds = 0.75 V, Pdc < 3 mW, have been measured. We demonstrate that the kink related low frequency noise overshoot induced by the floating body effects disappears if the active silicon film thickness is thinned down to 30 nm. Ring oscillators measurements show also that SOI inverters are 30% faster than bulk ones. Finally, the operation at 1.8 V of a sigma delta modulator as well as of critical RF circuits (quadrature generator and mixers) for a zero IF 2 GHz GSM receiver has been demonstrated with this technology.

Published
2000
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12. High frequency noise parameters of 0.25 µm SOI MOSFETs : comparison between fully and partially-depleted devices

Author

Vanmackelberg, M., Picheta, L., Raynaud, C., Pelloie, J.L., Martin, F., Vanhoenacker, D., Dambrine, Gilles, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2000

13. Comparison of microwave performances for fully and partially depleted sub-quarter micron SOI MOSFETs

Author

Goffioul, M., Dambrine, Gilles, Vanhoenacker, D., Raskin, J.P., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2000

17. Alternative architectures of SOI MOSFET for improving DC and microwave characteristics

Author

Dehan, M., Vanhoenacker, D., Raskin, J.-P., Dehan, M., Vanhoenacker, D., and Raskin, J.-P.

Abstract

DC and high frequency characteristics of innovative SOI MOSFET’s such as graded channel and dynamic threshold voltage MOS are presented in this paper. These architectures are very promising for high frequency low power low voltage analog applications.

Published
2001

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