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1,483 results on '"Vandervorst, W."'

1. Analysing the linearised radially polarised light source for improved precision in strain measurement using micro-Raman spectroscopy

Author

Prabhakara, V., Nuytten, T., Bender, H., Vandervorst, W., Bals, S., and Verbeeck, J.

Subjects
Physics - Optics, Physics - Applied Physics, Physics - Data Analysis, Statistics and Probability
Abstract

Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique with high sensitivity to mechanical stress that does not require any special sample preparation procedures in comparison to characterization involving transmission electron microscopy (TEM), making it suitable for inline strain measurement in the semiconductor industry. Indeed at present, strain measurements using Raman spectroscopy are already routinely carried out in semiconductor devices as it is cost effective, fast and non-destructive. In this paper we explore the usage of linearised-radially polarised light as an excitation source, which does provide significantly enhanced accuracy and precision as compared to linearly polarised light for this application. Numerical simulations are done to quantitatively evaluate the electric field intensities that contribute to this enhanced sensitivity. We benchmark the experimental results against TEM diffraction-based techniques like nano-beam diffraction and Bessel diffraction. Differences between both approaches are assigned to strain relaxation due to sample thinning required in TEM setups, demonstrating the benefit of Raman for nondestructive inline testing.

Published
2021

20. FinFETs and Their Futures

Author

Horiguchi, N., Parvais, B., Chiarella, T., Collaert, N., Veloso, A., Rooyackers, R., Verheyen, P., Witters, L., Redolfi, A., De Keersgieter, A., Brus, S., Zschaetzsch, G., Ercken, M., Altamirano, E., Locorotondo, S., Demand, M., Jurczak, M., Vandervorst, W., Hoffmann, T., Biesemans, S., Nazarov, Alexei, editor, Colinge, J.-P., editor, Balestra, Francis, editor, Raskin, Jean-Pierre, editor, Gamiz, Francisco, editor, and Lysenko, V.S., editor

Published
2011
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27. Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

Author

Meuris, M., De Jaeger, B., Van Steenbergen, J., Bonzom, R., Caymax, M., Houssa, M., Kaczer, B., Leys, F., Martens, K., Opsomer, K., Pourghaderi, A. M., Satta, A., Simoen, E., Terzieva, V., Van Moorhem, E., Winderickx, G., Loo, R., Clarysse, T., Conard, T., Delabie, A., Hellin, D., Janssens, T., Onsia, B., Sioncke, S., Mertens, P. W., Snow, J., Van Elshocht, S., Vandervorst, W., Zimmerman, P., Brunco, D., Raskin, G., Letertre, F., Akatsu, T., Billon, T., Heyns, M., Itoh, Kiyoo, editor, Lee, Thomas, editor, Sakurai, Takayasu, editor, Sansen, Willy M. C., editor, Schmitt-Landsiedel, Doris, editor, Dimoulas, Athanasios, editor, Gusev, Evgeni, editor, McIntyre, Paul C., editor, and Heyns, Marc, editor

Published
2007
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39. Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature.

Author

Groven, B., Claes, D., Nalin Mehta, A., Bender, H., Vandervorst, W., Heyns, M., Caymax, M., Radu, I., and Delabie, A.

Subjects
CHEMICAL vapor deposition, LOW temperatures
Abstract

Monolayer-thin WS2 with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF6 and H2S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al2O3 starting surface. We investigate the growth and nucleation mechanism during the CVD process by analyzing the morphology of the WS2 crystals. The CVD process consists of two distinct growth regimes. During (i) the initial growth regime, a fast and self-limiting reaction of the CVD precursors with the Al2O3 starting surface forms predominantly monolayer-thin WS2 crystals and AlF3 crystals that completely cover the starting surface. During (ii) the steady-state growth regime, a much slower, anisotropic reaction on the bottom, first WS2 layer proceeds with the next WS2 layer growing preferentially in the lateral dimensions. We propose that the precursor adsorption reaction rate strongly diminishes when the precursors have no more access to the Al2O3 surface as soon as the WS2 layer completely covers the Al2O3 surface and that the WS2 crystal basal planes and AlF3 crystals have a low reactivity for WF6 adsorption at 450 °C. Nonetheless, a second layer of WS2 starts to form before the first WS2 layer completely covers the starting surface, albeit the surface coverage of the second layer is low (<20%, after 25 min of CVD reaction). During the steady-state growth regime, predominantly the WS2 crystals in the second monolayer continue to grow in lateral dimensions up to ∼40 nm. These crystals reach larger lateral dimensions compared to the crystals in the bottom, first layer due to low reactivity for WF6 adsorption on the WS2 basal plane compared to Al2O3. Presumably, they grow laterally by precursor species that adsorb on and diffuse across the WS2 surface, before being incorporated at the more reactive edges of the WS2 crystals in the second layer. Such a process proceeds slowly with only up to 40% surface coverage of the second WS2 layer after 150 min of CVD reaction. The CVD reaction is mediated by the starting surface: WF6 precursor preferentially adsorbs on Al2O3, whereas adsorption is not observed on SiO2. Nevertheless, WS2 grows on SiO2 in close proximity to Al2O3 in 90 nm pitch Al2O3/SiO2 line patterns. Hence, functionalization of the starting surface (e.g., SiO2 with Al2O3) can provide opportunities to grow monolayer-thin WS2 crystals at predetermined locations by selective, lateral growth with tunable crystal size, even at low deposition temperatures. [ABSTRACT FROM AUTHOR]

Published
2019
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47. Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers

Author

Dhayalan, S, Nuytten, T, Pourtois, G, Simoen, E, Pezzoli, F, Cinquanta, E, Bonera, E, Loo, R, Rosseel, E, Hikavyy, A, Shimura, Y, Vandervorst, W, Dhayalan S. K., Nuytten T., Pourtois G., Simoen E., Pezzoli F., Cinquanta E., Bonera E., Loo R., Rosseel E., Hikavyy A., Shimura Y., Vandervorst W., Dhayalan, S, Nuytten, T, Pourtois, G, Simoen, E, Pezzoli, F, Cinquanta, E, Bonera, E, Loo, R, Rosseel, E, Hikavyy, A, Shimura, Y, Vandervorst, W, Dhayalan S. K., Nuytten T., Pourtois G., Simoen E., Pezzoli F., Cinquanta E., Bonera E., Loo R., Rosseel E., Hikavyy A., Shimura Y., and Vandervorst W.

Abstract

Si:C and Si:C:P alloys are potential candidates for source-drain stressor applications in n-type Fin Field Effect Transistors (FinFETs). Increasing the C content to achieve high strain results in the arrangement of C atoms as third nearest neighbors (3nn) in the Si:C lattice. During thermal annealing, the presence of C atoms as 3nn may promote clustering at the interstitial sites, causing loss of stress. The concentration of C atoms as 3nn is reduced by the incorporation of a small amount of Ge atoms during the growth, whereas in-situ P doping does not influence this 3nn distribution [J Solid State Sci. Technol vol 6, p 755, 2017]. Small amounts of Ge are provided during low temperature selective epitaxial growth scheme, which are based on cyclic deposition and etching (CDE). In this work, we aim to provide physical insights into the aforementioned phenomena, to understand the behavior of 3nn C atoms and the types of defects that are formed in the annealed Si:C films. Using ab-initio simulations, the Ge-C interaction in the Si matrix is investigated and this insight is used to explain how the Ge incorporation leads to a reduced 3nn distribution of the C atoms. The interaction between C and P in the Si:C:P films is also investigated to explain why the P incorporation has not led to a reduction in the 3nn distribution. We then report on the Raman characterization of Si:C layers subjected to post epi annealing. As the penetration depth of the laser is dependent on the wavelength, Raman measurements at two different wavelengths enable us to probe the depth distribution of 3nn C atoms after applying different annealing conditions. We observed a homogeneous loss in 3nn C throughout the layer. Whereas in the kinematic modeling of high resolution X-ray diffraction spectra, a gradient in the substitutional C loss was observed close to the epitaxial layer/substrate interface. This gradient can be due to the out diffusion of C atoms into the Si substrate or to the formation of

Published
2019

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