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658 results on '"Van Thourhout, D."'

1. Graphene phase modulators operating in the transparency regime

Author

Watson, H. F. Y., Ruocco, A., Tiberi, M., Muench, J. E., Balci, O., Shinde, S. M., Mignuzzi, S., Pantouvaki, M., Van Thourhout, D., Sordan, R., Tomadin, A., Romagnoli, M., and Ferrari, A. C.

Subjects
Physics - Instrumentation and Detectors, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterised by the voltage required to achieve a $\pi$ phase shift V$_{\pi}$, the device length L, and their product V$_{\pi}$L. To reduce power consumption, IQ modulators are needed with$<$1V drive voltages and compact (sub-cm) dimensions, which translate in V$_\pi$L$<$1Vcm. Si and LiNbO$_3$ (LN) IQ modulators do not currently meet these requirements, because V$_{\pi}$L$>$1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparent regime, where optical losses are minimised and remain constant with increasing voltage. Our device has $V_{\pi}L\sim$0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss ($\sim$5dB), essential for IQ modulation. Our $V_\pi L$ is$\sim$5 times lower than the lowest thin-film LN MZMs, and$\sim$3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible V$_\pi$L ($<$1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by one order of magnitude.

Published
2023

2. Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits

Author

Maiti, R., Patil, C., Xie, T., Azadani, J. G., Saadi, M. A. S. R., Amin, R., Miscuglio, M., Van Thourhout, D., Solares, S. D., Low, T., Agarwal, R., Bank, S., and Sorger, V. J.

Subjects
Physics - Applied Physics, Physics - Optics
Abstract

In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

Published
2019

3. Piezoelectrically driven Fano resonance in silicon photonics.

Author

Ansari, I., Feutmba, G. F., George, J. P., Rijckaert, H., Beeckman, J., and Van Thourhout, D.

Subjects
PIEZOELECTRIC thin films, FANO resonance, VIBRATION (Mechanics), SILICON films, THIN films, LEAD zirconate titanate
Abstract

Piezoelectric optomechanical platforms provide a promising avenue for efficient signal transduction between microwave and optical domains. Lead zirconate titanate (PZT) thin film stands out as a compelling choice for building such a platform given its high piezoelectricity and optical transparency, enabling strong electro-optomechanical transduction. This work explores the application of such transduction to induce Fano resonance in a silicon photonics integrated circuit (PIC). Our methodology involves integrating a PZT thin film onto a silicon PIC and subsequently removing the SiO2 layer to suspend the silicon waveguide, allowing controlled mechanical vibrations. Fano resonances, characterized by their distinctive asymmetric line shape, were observed at frequencies up to 6.7 GHz with an extinction ratio of 21 dB. A high extinction ratio of 41 dB was achieved at the lower resonance frequency of 223 MHz. Our results demonstrate the potential of piezoelectric thin film integration for the generation of Fano resonances on passive photonic platforms such as Si, paving the way for highly sensitive, compact, and power-efficient devices relevant to a wide range of applications. [ABSTRACT FROM AUTHOR]

Published
2024
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5. Quantum Rod Emission Coupled to Plasmonic Lattice Resonances: A Collective Directional Source of Polarized Light

Author

Rodriguez, S. R. K., Lozano, G., Verschuuren, M. A., Gomes, R., Lambert, K., De Geyter, B., Hassinen, A., Van Thourhout, D., Hens, Z., and Rivas, J. Gomez

Subjects
Physics - Optics
Abstract

We demonstrate that an array of optical antennas may render a thin layer of randomly oriented semiconductor nanocrystals into an enhanced and highly directional source of polarized light. The array sustains collective plasmonic lattice resonances which are in spectral overlap with the emission of the nanocrystals over narrow angular regions. Consequently, different photon energies of visible light are enhanced and beamed into definite directions., Comment: 4 pages, 3 figures

Published
2013
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7. Generation of correlated photons in hydrogenated amorphous-silicon waveguides

Author

Clemmen, S., Perret, A., Selvaraja, S. K., Bogaerts, W., van Thourhout, D., Baets, R., Emplit, Ph., and Massar, S.

Subjects
Quantum Physics, Physics - Optics
Abstract

We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous- silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geome- try. In particular, we show that amorphous silicon has a higher nonlinearity and competes with crystalline silicon in spite of higher loss., Comment: 3 pages, 4 figures

Published
2011

9. PZT micro-transfer printing for photonic MEMS

Author

Ansari, I., primary, De Geest, K., additional, De Witte, J., additional, Vandekerckhove, T., additional, Rijckaert, H., additional, Picavet, E., additional, Lievens, E., additional, Feutmba, G. F., additional, Van de Veire, T., additional, Kuyken, B., additional, Beeckman, J., additional, and Van Thourhout, D., additional

Published
2023
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20. 5 x 25 Gbit/s WDM Transmitters Based on Passivated Graphene-Silicon Electro-Absorption Modulators

Author

Alessandri, C, Asselberghs, I, Brems, S, Huyghebaert, C, Van Campenhout, J, Van Thourhout, D, and Pantouvaki, M

Subjects
graphene modulators, silicon photonics
Abstract

Today, one of the key challenges for the exploitation of graphene devices is establishing fabrication processes that can ensure performance stability, repeatability and that can eventually enable produc- tion in high volumes. In this paper we use up-scalable fabrication processes to demonstrate three 5- channel wavelength-division multiplexing (WDM) transmitters, each based on 5 graphene-silicon electro- absorption modulators (EAM). A passivation-first approach is used to encapsulate graphene, which re- sults in hysteresis-free and uniform performance across the 5 channels of each WDM transmitter, for a total of 15 modulators. Open eye diagrams are obtained at 25 Gb/s using 2.5 Vpp, thus demonstrating potential for multi-channel data transmission at 5 x 25 Gb/s on each of the three WDM transmitters.

Published
2020

21. III-V/Si photonics by die-to-wafer bonding

Author

Roelkens, G., Van Campenhout, J., Brouckaert, J., Van Thourhout, D., Baets, R., Romeo, P. Rojo, Regreny, P., Kazmierczak, A., Seassal, C., Letartre, X., Hollinger, G., Fedeli, J.M., Di Cioccio, L., and Lagahe-Blanchard, C.

Published
2007
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22. Wavelength-resolved Purcell enhancement of PbS/CdS quantum dots measured on a chip-based platform

Author

Elsinger, L., Gourgues, R., Zadeh, I. E., Maes, J., Guardiani, A., Bulgarini, G., Pereira, S. F., Dorenbos, S. N., Zwiller, Val, Hens, Z., Van Thourhout, D., Elsinger, L., Gourgues, R., Zadeh, I. E., Maes, J., Guardiani, A., Bulgarini, G., Pereira, S. F., Dorenbos, S. N., Zwiller, Val, Hens, Z., and Van Thourhout, D.

Abstract

Future quantum optical networks will require an integrated solution to multiplex suitable sources and detectors on a low-loss platform. Here we combined superconducting single-photon detectors with colloidal PbS/CdS quantum dots (QDs) and low-loss silicon nitride passive photonic components to show their combined operation at cryogenic temperatures. Using a planar concave grating spectrometer, we performed wavelength-resolved measurements of the photoluminescence decay of QDs, which were deterministically placed in the gap of plasmonic antennas, in order to improve their emission rate. We observed a Purcell enhancement matching the antenna simulations, with a concurrent increase of the count rate on the superconducting detectors., QC 20200629

Published
2020
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30. Tunable and Efficient Red to Near-Infrared Photoluminescence by Synergistic Exploitation of Core and Surface Silver Doping of CdSe Nanoplatelets

Author

Khan, A, Pinchetti, V, Tanghe, I, Dang, Z, Martín-García, B, Hens, Z, Van Thourhout, D, Geiregat, P, Brovelli, S, Moreels, I, Khan, Ali Hossain, Pinchetti, Valerio, Tanghe, Ivo, Dang, Zhiya, Martín-García, Beatriz, Hens, Zeger, Van Thourhout, Dries, Geiregat, Pieter, Brovelli, Sergio, Moreels, Iwan, Khan, A, Pinchetti, V, Tanghe, I, Dang, Z, Martín-García, B, Hens, Z, Van Thourhout, D, Geiregat, P, Brovelli, S, Moreels, I, Khan, Ali Hossain, Pinchetti, Valerio, Tanghe, Ivo, Dang, Zhiya, Martín-García, Beatriz, Hens, Zeger, Van Thourhout, Dries, Geiregat, Pieter, Brovelli, Sergio, and Moreels, Iwan

Abstract

We report on the synthesis of silver (Ag)-doped CdSe nanoplatelets (NPLs) via postsynthesis cation exchange, using silver acetate as the Ag precursor. High-resolution transmission electron microscopy and X-ray diffraction confirmed that the NPLs maintain their morphology and crystal structure after doping when executing the exchange under reduced temperature in an ice bath. Spectroelectrochemistry and transient absorption spectroscopy revealed that Ag + acts as an acceptor dopant. Ag doping results in an emission that is tunable from 609 to 880 nm, with a Stokes shift up to 1 eV and a photoluminescence quantum efficiency exceeding 50%. This is achieved by varying the Ag dopant concentration, which determines the hole energy level, and by controlling the electron energy level via quantum confinement in CdSe NPLs with varying core thickness or in CdSe/CdS core/shell NPLs. As highly fluorescent materials with a strongly suppressed emission reabsorption because of the large Stokes shift, Ag-doped colloidal two-dimensional NPLs offer new opportunities for the development of colloidal nanocrystal-based optoelectronic and photonic devices such as light-emitting diodes or luminescent solar concentrators

Published
2019

33. Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits.

Author

Maiti, R., Patil, C., Saadi, M. A. S. R., Xie, T., Azadani, J. G., Uluutku, B., Amin, R., Briggs, A. F., Miscuglio, M., Van Thourhout, D., Solares, S. D., Low, T., Agarwal, R., Bank, S. R., and Sorger, V. J.

Abstract

In integrated photonics, specific wavelengths such as 1,550 nm are preferred due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, two-dimensional materials bear scientifically and technologically relevant properties such as electrostatic tunability and strong light–matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with two-dimensional transition metal dichalcogenide materials due to their large optical bandgaps. Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A W–1) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material. Non-planarized waveguide structures show a bandgap modulation of 0.2 eV, resulting in a large photoresponse in an otherwise photoinactive medium when unstrained. Unlike graphene-based photodetectors that rely on a gapless band structure, this photodetector shows an approximately 100-fold reduction in dark current, enabling an efficient noise-equivalent power of 90 pW Hz–0.5. Such a strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems. A strain-induced absorption-enhanced MoTe2-based silicon photonic microring-integrated photodetector is demonstrated, featuring high responsivity of ~0.5 A W–1 at 1,550 nm, with a low noise-equivalent power of 90 pW Hz–0.5. [ABSTRACT FROM AUTHOR]

Published
2020
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35. Transfer Printing for Silicon Photonics Transceivers and Interposers

Author

Roelkens, G., primary, Zhang, J., additional, De Groote, A., additional, Juvert, J., additional, Ye, N., additional, Kumari, S., additional, Goyvaerts, J., additional, Muliuk, G., additional, Uvin, S., additional, Chen, G., additional, Haq, B., additional, Snyder, B., additional, Van Campenhout, J., additional, Van Thourhout, D., additional, Trindade, A. J., additional, Bower, C.A., additional, O'Callaghan, J., additional, Loi, R., additional, Roycroft, B., additional, and Corbett, B., additional

Published
2018
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37. Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides.

Author

Karle, T. J., Halioua, Y., Raineri, F., Monnier, P., Braive, R., Le Gratiet, L., Beaudoin, G., Sagnes, I., Roelkens, G., van Laere, F., Van Thourhout, D., and Raj, R.

Subjects
PLASMA waveguides, ELECTRIC properties of crystals, ULTRAVIOLET radiation, ELECTRON beam lithography, ELECTRON optics, WAVEGUIDES, ELECTRON beams, SEMICONDUCTORS
Abstract

The integration of two-dimensional III-V InP-based photonic crystal and silicon wire waveguides is achieved through an accurate alignment of the two optical levels using mix-and-match deep ultraviolet (DUV)/electron beam lithography. The adhesively bonded structures exhibit an enhancement of light emission at frequencies where low group velocity modes of the photonic crystal line defect waveguides occur. Pulsed laser operation is obtained from these modes at room temperature under optical pumping. The laser light is coupled out of the Si waveguide via grating couplers directly to single mode fiber. [ABSTRACT FROM AUTHOR]

Published
2010
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38. Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration.

Author

Roelkens, G., Liu, L., Van Thourhout, D., Baets, R., Nötzel, R., Raineri, F., Sagnes, I., Beaudoin, G., and Raj, R.

Subjects
NONLINEAR theories, NANOPHOTONICS, WAVEGUIDES, THIN films, RESONANCE
Abstract

The heterogeneous integration of a III–V thin film on top of a silicon-on-insulator (SOI) optical waveguide circuit by means of adhesive divinylsiloxane-benzocyclobutene (DVS-BCB) die-to-wafer bonding is demonstrated, thereby achieving light emission and enhanced nonlinearity in ultracompact SOI cavities. This approach requires ultrathin DVS-BCB bonding layers to allow the highly confined optical mode to overlap with the bonded III–V film. The transfer of sub-100-nm III–V layers using a 65 nm DVS-BCB bonding layer onto SOI racetrack resonator structures is demonstrated. Spontaneous emission coupled to a SOI bus waveguide, spectrally centered around the resonator resonances, is observed by optically pumping the III–V layer. Strong carrier-induced nonlinearities are observed in the transmission characteristics of the III–V/SOI resonator structure. The all-optical control of an optical signal in these III–V/SOI resonators is demonstrated. [ABSTRACT FROM AUTHOR]

Published
2008
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39. Ultra-compact silicon nitride grating coupler for microscopy systems

Author

Zhu, Y., Wang, J., Xie, W., Tian, B., Li, Y., Brainis, E., Jiao, Y., van Thourhout, D., Zhu, Y., Wang, J., Xie, W., Tian, B., Li, Y., Brainis, E., Jiao, Y., and van Thourhout, D.

Abstract

Grating couplers have been widely used for coupling light between photonic chips and optical fibers. For various quantum-optics and bio-optics experiments, on the other hand, there is a need to achieve good light coupling between photonic chips and microscopy systems. Here, we propose an ultra-compact silicon nitride (SiN) grating coupler optimized for coupling light from a waveguide to a microscopy system. The grating coupler is about 4 by 2 μm2 in size and a 116 nm 1 dB bandwidth can be achieved theoretically. An optimized fabrication process was developed to realize suspended SiN waveguides integrated with these couplers on top of a highly reflective bottom mirror. Experimental results show that up to 53% (2.76 dB loss) of the power of the TE mode can be coupled from a suspended SiN waveguide to a microscopy system with a numerical aperture (NA) 0.65. Simulations show this efficiency can increase up to 75% (1.25 dB loss) for NA = 0.95.

Published
2017

41. Optical Interconnect Solution With Plasmonic Modulator and Ge Photodetector Array

Author

Hoessbacher, C., primary, Salamin, Y., additional, Fedoryshyn, Y., additional, Heni, W., additional, Baeuerle, B., additional, Josten, A., additional, Haffner, C., additional, Zahner, M., additional, Chen, H., additional, Elder, D. L., additional, Wehrli, S., additional, Hillerkuss, D., additional, Van Thourhout, D., additional, Van Campenhout, J., additional, Dalton, L. R., additional, Hafner, C., additional, and Leuthold, J., additional

Published
2017
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46. Plasmonic-organic hybrid (POH) modulators for OOK and BPSK signaling at 40 Gbit/s

Author

Melikyan, A., Koehnle, K., Lauermann, M., Palmer, R., Koeber, S., Muehlbrandt, S., Schindler, P. C., Elder, D.L., Wolf, S., Heni, W., Haffner, C., Fedoryshyn, Y., Hillerkuss, D., Sommer, M., Dalton, L. R., Van Thourhout, D., Freude, W., Kohl, M., Leuthold, J., and Koos, C.

Subjects
Technology and Engineering, POWER, HIGH-SPEED, ddc:620, SILICON, Engineering & allied operations, WAVE-GUIDE
Abstract

We report on high-speed plasmonic-organic hybrid Mach-Zehnder modulators comprising ultra-compact phase shifters with lengths as small as 19 mu m. Choosing an optimum phase shifter length of 29 mu m, we demonstrate 40 Gbit/s on-off keying (OOK) modulation with direct detection and a BER < 6 x 10(-4). Furthermore, we report on a 29 mu m long binary-phase shift keying (BPSK) modulator and show that it operates error-free (BER < 1 x 10(-10)) at data rates up to 40 Gbit/s and with an energy consumption of 70 fJ/bit. (C) 2015 Optical Society of America

Published
2015

47. Heterogenously integrated InP on Si microdisk lasers

Author

Morthier, G., Spuesens, T., Mechet, P., Olivier, N., Fedeli, J., Regreny, Philippe, van Thourhout, D., Roelkens, G., Grand Centre, SATT, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Inl, Laboratoire INL UMR5270

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

FEB 09-12, 2015; International audience; We review recent theoretical and experimental work on InP membrane microdisk lasers heterogeneously integrated on SOI and coupled to a Si bus waveguide. After a general introduction on the fabrication and the operation principles, we will describe various improvements in the fabrication technology. This includes improvements in the yield of the bonding of the InP die on the SOI die and in the controllability of the bonding layer thickness, as well as an optimization of the alignment of the microdisk with respect to the silicon waveguide and some proposals for better heat sinking and loss reduction. Improvement in the alignment and the bonding has led to interesting results on the uniformity in device characteristics. In a second part, unidirectional behaviour and reflection sensitivity will be briefly discussed. Theoretical, numerical and experimental results will be shown about the unidirectional behavior and it will be explained how unidirectional microdisk lasers can be a lot less sensitive to external reflections than other lasers. We will also show how such lasers can be used as optical signal regenerators that can work with low optical input powers and that have small power consumption. We will end with a description of demonstrations of optical interconnects based on heterogeneously integrated microdisk lasers and heterogeneously integrated photodetectors. Optical interconnects on chip have been demonstrated at 10 Gb/s. An epitaxial layer stack that contains both the laser and the detector structure has been used for this purpose.

Published
2015

48. Strain-engineered high-responsivity MoTe2photodetector for silicon photonic integrated circuits

Author

Maiti, R., Patil, C., Saadi, M. A. S. R., Xie, T., Azadani, J. G., Uluutku, B., Amin, R., Briggs, A. F., Miscuglio, M., Van Thourhout, D., Solares, S. D., Low, T., Agarwal, R., Bank, S. R., and Sorger, V. J.

Abstract

In integrated photonics, specific wavelengths such as 1,550 nm are preferred due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, two-dimensional materials bear scientifically and technologically relevant properties such as electrostatic tunability and strong light–matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with two-dimensional transition metal dichalcogenide materials due to their large optical bandgaps. Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A W–1) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material. Non-planarized waveguide structures show a bandgap modulation of 0.2 eV, resulting in a large photoresponse in an otherwise photoinactive medium when unstrained. Unlike graphene-based photodetectors that rely on a gapless band structure, this photodetector shows an approximately 100-fold reduction in dark current, enabling an efficient noise-equivalent power of 90 pW Hz–0.5. Such a strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

Published
2020
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49. Integration platform for optical switching of magnetic elements

Author

Subramania, Ganapathi S., Foteinopoulou, Stavroula, Sobolewska, E. K., Pelloux-Prayer, J., Becker, H., Li, G., Davies, C. S., Krückel, C. J., Avilés Félix, L., Olivier, A., Sousa, R. C., Prejbeanu, I. L., Kiriliouk, A. I., Van Thourhout, D., Rasing, T., Moradi, F., and Heck, M. J. R.

Published
2020
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50. Thin film III-V devices integrated on silicon-on-insulator waveguide circuits

Author

Roelkens, G., Brouckaert, J., van Thourhout, D., Baets, R., Nötzel, R., Smit, M., Photonic Integration, and Photonics and Semiconductor Nanophysics

Subjects
Materials science, business.industry, Electronic engineering, Optoelectronics, Silicon on insulator, Thin film, business, Waveguide (optics), Electronic circuit
Abstract

Thin film InP/InGaAsP active opto-electronic devices were fabricated on top of Silicon-on-Insulator waveguide circuits. Device integration was done using adhesive die to wafer bonding. Both photodetectors and laser diodes were fabricated on and coupled to Silicon-on-Insulator waveguide circuits. Integration of laser diodes and photodetectors was done simultaneously using identical processing steps. copyright The Electrochemical Society.

Published
2006

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