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495 results on '"Van Campenhout, J"'

1. Optical Pre-Emphasis by Cascaded Graphene Electro Absorption Modulators

Author

Sorianello, V., Contestabile, G., Midrio, M., Pantouvaki, M., Asselbergs, I., Van Campenhout, J., Huyghebaerts, C., and Romagnoli, M.

Subjects
Physics - Applied Physics, Electrical Engineering and Systems Science - Signal Processing
Abstract

A simple optical circuit made by a cascade of two graphene-on-silicon electro absorption modulators (EAMs) of different length is used for the optical pre-emphasis of 10 Gb/s non-return-to-zero (NRZ) signals by delay-inverse-weight compensation. Transmission up to 100 km on single mode fiber (SMF) without dispersion compensation is reported, showing also the large performance advantage (6 dB in back-to back and around 5 dB in transmission) in respect of the conventional single EAM transmitter configuration.

Published
2020
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2. Graphene Phase Modulator

Author

Sorianello, V., Midrio, M., Contestabile, G., Asselberg, I., Van Campenhout, J., Huyghebaerts, C., Goykhman, I., Ott, A. K., Ferrari, A. C., and Romagnoli, M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We demonstrate a 10Gb/s Graphene Phase Modulator (GPM) integrated in a Mach-Zehnder interferometer configuration. This is a compact device, with a phase-shifter length of only 300$\mu$m, and 35dB extinction ratio. The GPM has modulation efficiency of 0.28Vcm, one order of magnitude higher compared to state-of-the-art depletion p-n junction Si phase modulators. Our GPM operates with 2V peak-to-peak driving voltage in a push-pull configuration, and it has been tested in a binary transmission of a non-return-to-zero data stream over 50km single mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy efficient hybrid Si-graphene modulators for telecom, datacom and other applications

Published
2017
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7. Nonlinear optical interactions in silicon waveguides

Author

Kuyken B., Leo F., Clemmen S., Dave U., Van Laer R., Ideguchi T., Zhao H., Liu X., Safioui J., Coen S., Gorza S.P., Selvaraja S. K., Massar S., Osgood R. M., Verheyen P., Van Campenhout J., Baets R., Green W.M. J., and Roelkens G.

Subjects
Physics, QC1-999
Abstract

The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

Published
2017
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8. Packaging of Ultra-dynamic Photonic Switches and Transceivers for Integration into 5G Radio Access Network and Datacenter Sub-systems

Author

Van Steenberge, G., primary, Roelkens, G., additional, Ossieur, P., additional, Missinne, J., additional, Van Asch, J., additional, Zhang, J., additional, Qin, S., additional, Van Campenhout, J., additional, Van Kerkhof, J., additional, Milosevic, M. M., additional, Bakopoulos, P., additional, Syrivelis, D., additional, Mentovich, E., additional, Morozov, K., additional, Stracca, S., additional, Bigongiari, A., additional, Joerg, T., additional, Schlick, D., additional, Braun, T., additional, Wöhrmann, M., additional, Gernhardt, R., additional, Cheng, Q., additional, Li, T., additional, and Penty, R., additional

Published
2023
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9. High speed transceivers beyond 1.6Tb/s for data centre networks

Author

Ossieur, P., primary, Moeneclaey, B., additional, Lambrecht, J., additional, Craninckx, J., additional, Martens, E., additional, Van Driessche, J., additional, Declercq, J., additional, Niu, S., additional, Pannier, T., additional, Gu, Y., additional, Zhang, J., additional, Vanackere, T., additional, Maes, D., additional, Oldenbeuving, R. M., additional, Zhang, X., additional, Van Campenhout, J., additional, Absil, P., additional, Kuyken, B., additional, Yin, X., additional, Torfs, G., additional, Roelkens, G., additional, and Bauwelinck, J., additional

Published
2023
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10. Reconfigurable Interconnects in DSM Systems: A Focus on Context Switch Behavior

Author

Artundo, I., Manjarres, D., Heirman, W., Debaes, C., Dambre, J., Van Campenhout, J., Thienpont, H., Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Dough, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Min, Geyong, editor, Di Martino, Beniamino, editor, Yang, Laurence T., editor, Guo, Minyi, editor, and Rünger, Gudula, editor

Published
2006
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14. Temperature Tolerant On-Chip WDM Silicon Photonic Transmitter and AWGR-based Routing Interconnects

Author

Roumpos, I., primary, Chrysostomidis, T., additional, Grimaldi, V., additional, Zanetto, F., additional, Toso, F., additional, De Heyn, P., additional, Ban, Y., additional, Van Campenhout, J., additional, Ferrari, G., additional, Sampietro, M., additional, Morichetti, F., additional, Melloni, A., additional, Vyrsokinos, K., additional, Alexoudi, T., additional, Pleros, N., additional, and Moralis-Pegios, M., additional

Published
2022
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17. 5 x 25 Gbit/s WDM Transmitters Based on Passivated Graphene-Silicon Electro-Absorption Modulators

Author

Alessandri, C, Asselberghs, I, Brems, S, Huyghebaert, C, Van Campenhout, J, Van Thourhout, D, and Pantouvaki, M

Subjects
graphene modulators, silicon photonics
Abstract

Today, one of the key challenges for the exploitation of graphene devices is establishing fabrication processes that can ensure performance stability, repeatability and that can eventually enable produc- tion in high volumes. In this paper we use up-scalable fabrication processes to demonstrate three 5- channel wavelength-division multiplexing (WDM) transmitters, each based on 5 graphene-silicon electro- absorption modulators (EAM). A passivation-first approach is used to encapsulate graphene, which re- sults in hysteresis-free and uniform performance across the 5 channels of each WDM transmitter, for a total of 15 modulators. Open eye diagrams are obtained at 25 Gb/s using 2.5 Vpp, thus demonstrating potential for multi-channel data transmission at 5 x 25 Gb/s on each of the three WDM transmitters.

Published
2020

18. III-V/Si photonics by die-to-wafer bonding

Author

Roelkens, G., Van Campenhout, J., Brouckaert, J., Van Thourhout, D., Baets, R., Romeo, P. Rojo, Regreny, P., Kazmierczak, A., Seassal, C., Letartre, X., Hollinger, G., Fedeli, J.M., Di Cioccio, L., and Lagahe-Blanchard, C.

Published
2007
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27. Dark current analysis in high-speed germanium p-i-n waveguide photodetectors.

Author

Chen, H., Verheyen, P., De Heyn, P., Lepage, G., De Coster, J., Balakrishnan, S., Absil, P., Roelkens, G., and Van Campenhout, J.

Subjects
DARK currents (Electric), ELECTRIC properties of germanium, PHOTODETECTORS, STRAY currents, ACTIVATION energy, ELECTRIC potential
Abstract

We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. [ABSTRACT FROM AUTHOR]

Published
2016
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30. Automated Thermal Drift Compensation in WDM-based Silicon Photonic Multi-Socket Interconnect Systems

Author

Moralis-Pegios, M., primary, Zanetto, F., additional, Guglielmi, E., additional, Grimaldi, V., additional, Fotiadis, K., additional, Pitris, S., additional, Alexoudi, T., additional, De Heyn, P., additional, Ban, Y., additional, Van Campenhout, J., additional, Aguiar, D., additional, Ferrari, G., additional, Sampietro, M., additional, Melloni, A., additional, and Pleros, N., additional

Published
2020
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36. Transfer printing for silicon photonics tranceivers and interposers

Author

Roelkens, Günther, Zhang, Jing, De Groote, Andreas, Juvert, Joan, Ye, Nan, Kumari, Sulakshna, Goyvaerts, Jeroen, Muliuk, Grigorij, Uvin, Sarah, Chen, Guanyu, Haq, Bahawal, Snyder, B., Van Campenhout, J., Van Thourhout, Dries, Trindade, A.J., Bower, C.A., O'Callaghan, J., Loi, R., Roycroft, B., and Corbett, B.

Published
2018

37. Graphene-silicon phase modulators with gigahertz bandwidth

Author

Sorianello, V, Midrio, M, Contestabile, G, Asselberghs, I, Van Campenhout, J, Huyghebaert, C, Goykhman, I, Ott, AK, Ferrari, AC, Romagnoli, M, Ott, Anna [0000-0002-7652-7322], Ferrari, Andrea [0000-0003-0907-9993], and Apollo - University of Cambridge Repository

Abstract

The modulator is a key component in optical communications. Several graphene-based amplitude modulators have been reported based on electro-absorption. However, graphene phase modulators (GPMs) are necessary for functions such as applying complex modulation formats or making switches or phased arrays. Here, we present a 10 Gb s -1 GPM integrated in a Mach-Zehnder interferometer configuration. This is a compact device based on a graphene-insulator-silicon capacitor, with a phase-shifter length of 300 μm and extinction ratio of 35 dB. The GPM has a modulation efficiency of 0.28 V cm at 1,550 nm. It has 5 GHz electro-optical bandwidth and operates at 10 Gb s -1 with 2 V peak-to-peak driving voltage in a push-pull configuration for binary transmission of a non-return-to-zero data stream over 50 km of single-mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy-efficient hybrid graphene-silicon modulators for telecom, datacom and other applications.

Published
2018

39. TSV-assisted Hybrid FinFET CMOS - Silicon Photonics Technology for High Density Optical I/O

Author

Guermandi, D., primary, Bogaerts, L., additional, Rakowski, M., additional, Ban, Y., additional, De Heyn, P., additional, Pantano, N., additional, Bex, P., additional, De Coster, J., additional, He, J., additional, Phommahaxay, A., additional, Balakrishnan, S., additional, Demeurisse, C., additional, Bertheau, J., additional, Rebibis, K.J., additional, Nolmans, P., additional, Sun, X., additional, Srinivasan, A., additional, Van Huylenbroeck, S., additional, Lardenois, S., additional, Miller, A., additional, Absil, P., additional, Verheyen, P., additional, Velenis, D., additional, Pantouvaki, M., additional, and Van Campenhout, J., additional

Published
2019
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41. Analog Radio-Over-Fiber Transceivers Based on III–V-on-Silicon Photonics

Author

Van Gasse, K., primary, Bogaert, L., additional, Breyne, L., additional, Van Kerrebrouck, J., additional, Dhoore, S., additional, Op de Beeck, C., additional, Katumba, A., additional, Wu, C.-Y., additional, Li, H., additional, Verbist, J., additional, Rahim, A., additional, Abbasi, A., additional, Moeneclaey, B., additional, Wang, Z., additional, Chen, H., additional, Van Campenhout, J., additional, Yin, X., additional, Kuyken, B., additional, Morthier, G., additional, Bauwelinck, J., additional, Torfs, G., additional, and Roelkens, G., additional

Published
2018
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43. High-Speed TSV Integration in an Active Silicon Photonics Interposer Platform

Author

Bogaerts, L., primary, El-Mekki, Z., additional, Van Huylenbroeck, S., additional, Nolmans, P., additional, Pantano, N., additional, Sun, X., additional, Rakowski, M., additional, Velenis, D., additional, Verheyen, P., additional, Balakrishnan, S., additional, De Heyn, P., additional, Snyder, B., additional, Ban, Y., additional, Srinivasan, S., additional, Lardenois, S., additional, De Coster, J., additional, Detalle, M., additional, Absil, P., additional, Miller, A., additional, Pantouvaki, M., additional, and Van Campenhout, J., additional

Published
2018
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45. Transfer Printing for Silicon Photonics Transceivers and Interposers

Author

Roelkens, G., primary, Zhang, J., additional, De Groote, A., additional, Juvert, J., additional, Ye, N., additional, Kumari, S., additional, Goyvaerts, J., additional, Muliuk, G., additional, Uvin, S., additional, Chen, G., additional, Haq, B., additional, Snyder, B., additional, Van Campenhout, J., additional, Van Thourhout, D., additional, Trindade, A. J., additional, Bower, C.A., additional, O'Callaghan, J., additional, Loi, R., additional, Roycroft, B., additional, and Corbett, B., additional

Published
2018
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46. Hybrid 14nm FinFET - Silicon Photonics Technology for Low-Power Tb/s/mm2 Optical I/O

Author

Rakowski, M., primary, Ban, Y., additional, De Heyn, P., additional, Pantano, N., additional, Snyder, B., additional, Balakrishnan, S., additional, Van Huylenbroeck, S., additional, Bogaerts, L., additional, Demeurisse, C., additional, Inoue, F., additional, Rebibis, K. J., additional, Nolmans, P., additional, Sun, X., additional, Bex, P., additional, Srinivasan, A., additional, De Coster, J., additional, Lardenois, S., additional, Miller, A., additional, Absil, P., additional, Verheyen, P., additional, Velenis, D., additional, Pantouvaki, M., additional, and Van Campenhout, J., additional

Published
2018
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47. Studies on the Diagnostic use Of LH-RH

Author

Rochefort, J. Guy, Chapdelaine, A., Tolis, G., Van Campenhout, J., O’Malley, Bert W., editor, Means, Anthony R., editor, Labrie, Fernand, editor, Meites, Joseph, editor, and Pelletier, Georges, editor

Published
1976
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48. III-V on silicon DFB laser arrays

Author

Van Thourhout, Dries, Shi, Yuting, Tian, Bin, Wang, Zhechao, Pantouvaki, M, Merckling, C, Kunert, B, Guo, W, and Van Campenhout, J

Subjects
Technology and Engineering
Abstract

We will present our work on epitaxially grown III-V on silicon DFB laser arrays, including results of pure InP-based lasers emitting around 900nm and InGaAs-on-InP lasers emitting around 1300nm.

Published
2016
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