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—Effects implying violation of the Fresnel light reflection laws in semiconductor structures with quantum wells (QWs) have been investigated. This violation is related to the manifestation of spatial dispersion caused by spin–orbit coupling in structures without inversion centers. The spin–orbit coupling constants characterizing polarization conversion in symmetric and asymmetric structures with QWs have been measured.

International audience; Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection coefficients is measured at oblique incidence of s and p polarized light in vicinity of exciton resonances. We demonstrate that this contribution to the reflection is caused by magnetogyrotropy of quantum wells, i.e. by the terms in the optical response which are linear in both the magnetic field strength and light wavevector. Theory of magnetogyrotropic effects in light reflection is developed with account for linear in momentum BIA induced terms in the electron and hole effective Hamiltonians. Theoretical estimates agree with the experimental findings. We have found the electron BIA splitting constant in both GaAs and CdTe based quantum wells is about three times smaller than that for heavy holes.

International audience; Polarization conversion of light reflected from quantum wells governed by both magnetic field and light propagation direction is observed. We demonstrate that the polarization conversion is caused by the magneto-spatial dispersion in quantum wells which manifests itself in the reflection coefficient contribution bilinear in the in-plane components of the magnetic field and the light wavevector. The magneto-spatial dispersion is shown to arise due to structure inversion asymmetry of the quantum wells. The effect is resonantly enhanced in the vicinity of the heavy-hole exciton. We show that microscopically the magneto-spatial dispersion is caused by the mixing of heavy-and light-hole states in the quantum well due to both orbital effect of the magnetic field and the in-plane hole motion. The degree of the structure inversion asymmetry is determined for GaAs/AlGaAs and CdTe quantum wells.

A new magnetooptical phenomenon referred to as the parity effect is predicted and observed. This effect takes the form of a redistribution of the exciton oscillator strength between spatially even and odd states of the exciton’s center of mass quantization in a wide quantum well.

In this paper we predicted and observed a new magneto-optical effect – the “effect of parity”. The effect is manifest as a redistribution of the oscillator strengths between spatially even and odd center of mass quantized states of the exciton in the quantum well. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

В данной работе мы предсказали и наблюдали новый магнитооптический эффект – «эффект четности». Этот эффект проявлялся как перераспределение силы осциллятора экситона между пространственно четными и нечетными состояниями квантования движения центра масс экситона в квантовой яме.

The photoluminescence spectra of individual quantum dots incorporated into a quantum wire are studied. From the behavior of the spectra in a magnetic field, it is possible to estimate the exciton binding energy in a quantum dot incorporated into a quantum wire. It is found that the exciton photoluminescence signal emitted from a quantum dot along the direction of the nanowire axis is linearly polarized. At the same time, the photoluminescence signal propagating in the direction orthogonal to the nanowire axis is practically unpolarized. The experimentally observed effect is attributed to the nonaxial arrangement of the dot in the wire under conditions of a huge increase in the exciton binding energy due to the effect of the image potential on the exciton.

International audience

The photoluminescence (PL) spectra of semiconductor structures, namely, Al0.3Ga0.7As-based quasi-one-dimensional cylindrical nanowires (nanowhiskers), are measured. The diameter of a typical nanowire is 20–50 nm, and its length was 0.5–1.0 μm. Samples containing one or several GaAs-based quantum dots at the center of the quantum wire are studied. The dot thickness is 2 nm, and the dot diameter is 15–40 nm. Individual nanowhiskers, several nanowhiskers (3–4), and ensembles consisting of many nanowhiskers are studied. The PL spectra are measured for different optical-excitation intensities and in magnetic fields of up to 11 T.

We report on the observation of optical activity of quantum wells resulting in the conversion of the light polarization state controlled by the light propagation direction. The polarization conversion is detected in reflection measurements. We show that a pure $s$-polarized light incident on a quantum well is reflected as an elliptically polarized wave. The signal is drastically enhanced in the vicinity of the light-hole exciton resonance. We show that the polarization conversion is caused by the spin-orbit splitting of the light hole states and the birefringence of the studied structure. The bulk inversion asymmetry constant $\beta_{h} \approx 0.14$ eV\AA, is determined for the ground light hole subband in a 10 nm ZnSe/ZnMgSSe quantum well., Comment: 5 pages, 3 figures and Online Supplemental Material (4 pages, 4 figures)

Ultrafast optical excitation of a metal ferromagnetic film results in a modification of the magnetocrystalline anisotropy and induces the magnetization precession. We consider two main contributions to these processes: an effect of noncoherent phonons, which modifies the temperature dependent parameters of the magnetocrystalline anisotropy and coherent phonons in the form of a strain contributing via inverse magnetostriction. Contrary to earlier experiments with high-symmetry ferromagnetic structures, where these mechanisms could not be separated, we study the magnetization response to femtosecond optical pulses in the low-symmetry magnetostrictive galfenol film so that it is possible to separate the coherent and noncoherent phonon contributions. By choosing certain experimental geometry and external magnetic fields, we can distinguish the contribution from a specific mechanism. Theoretical analysis and numerical calculations are used to support the experimental observations and proposed model.

Dynamical strain generated upon excitation of a metallic film by a femtosecond laser pulse may become a versatile tool enabling control of magnetic state of thin films and nanostructures via inverse magnetostriction on a picosecond time scale. Here we explore two alternative approaches to manipulate magnetocrystalline anisotropy and excite magnetization precession in a low-symmetry film of a magnetic metallic alloy galfenol (Fe,Ga) either by injecting picosecond strain pulse into it from a substrate or by generating dynamical strain of complex temporal profile in the film directly. In the former case we realize ultrafast excitation of magnetization dynamics solely by strain pulses. In the latter case optically-generated strain emerged abruptly in the film modifies its magnetocrystalline anisotropy, competing with heat-induced change of anisotropy parameters. We demonstrate that the optically-generated strain remains efficient for launching magnetization precession, when the heat-induced changes of anisotropy parameters do not trigger the precession anymore. We emphasize that in both approaches the ultrafast change of magnetic anisotropy mediating the precession excitation relies on mixed, compressive and shear, character of the dynamical strain, which emerges due to low-symmetry of the metallic film under study., Comment: 12 pages, 5 figures

The results of a study into the photoluminescence spectra of a set of quantum dots based on GaAs enclosed in AlGaAs nanowires are presented. The steady state and time resolved spectra of photoluminescence under optical excitation both from an array of quantum wires/dots and a single quantum wire/dot have been measured. In the photoluminescence spectra of single quantum dots, emission lines of excitons, biexcitons and tritons have been found. The binding energy of the biexciton in the studied structures was deduced to be 8 meV.

Photoluminescence spectra of strained structures Zn1 − xMnxTe/Zn1 − yMgyTe with magnetic quantum wells and nonmagnetic barriers are studied. The Zeeman splitting of the heavy exciton is found to follow an unusual behavior: both spin components shift down in energy. The heavy-exciton photoluminescence Zeeman components are observed to be inversely distributed in intensity, with the higher energy component being stronger than the lower energy component. The Zeeman splitting of the exciton in a magnetic field is calculated. The data obtained permit refinement of some parameters of the energy spectrum and magnetic properties of these structures.

We present a numerical model of quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures strictly based on experimental structures of polyphorm cylindrical nanocolumns.

International audience; We report on a numerical model of quasi onedimensional and quasi zero-dimensional semiconductor heterostructures. This model is strictly based on experimental structures of cylindrical nanocolumns of AlGaAs grown by molecular-beam epitaxy in the (111) direction. The nanocolumns are of 20 - 50 nm in diameter and 0.5 - 1 ìm in length and contain a single GaAs quantum dot, of 2 nm in thickness and 15 - 45 nm in diameter. Since the crystal phase of these nanowires spontaneously switches during the growth from zincblende (Zb) to wurzite (Wz) structures we implement a continuum elastic model and 8 band ~k * ~p model for polymorph crystal structures. The model is used to compute electromechanical fields, wavefunction energies of the confined states and optical transitions. The model compares a pure Zb structure with a polymorph in which the Zb disk of GaAs is surrounded by Wz barriers and results are compared to experimental photoluminescence excitation spectra. The good agreement found between theory and features in the spectra supports the polyphorm model.

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 μm in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the AlGaAs nanowires., Comment: 5 page, 5 figures

For the last 8 years the results of the surgical treatment of 124 patients have been studied in order to get more exact indications for the surgical treatment of gastroduodenal ulcerous hemorrhages. The conservative therapy was found to be effective in the first degree of severity of hemorrhage. The second and third degree are often followed by recurrent hemorrhages which speaks for the early surgical treatment.

An analysis of 185 vagotomies for chronic duodenal ulcers has been made. It has been established that the surgery was an adequate method in 92,1% of the patients. Lethal outcomes and complications were given a detailed consideration. A conclusion was made that for the improvement of results of organ-preserving operations of special significance was analysis of the course of the ulcer disease and the anatomical alterations. It facilitates solution of the question of expediency of vagotomy and correct selection of its variant.