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1,342 results on '"Ustinov, V. M."'

2. Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers

Author

Blokhin, S. A., Babichev, A. V., Gladyshev, A. G., Karachinsky, L. Ya., Novikov, I. I., Blokhin, A. A., Bobrov, M. A., Maleev, N. A., Kuzmenkov, A. G., Nadtochiy, A. M., Nevedomskiy, V. N., Andryushkin, V. V., Rochas, S. S., Denisov, D. V., Voropaev, K. O., Zhumaeva, I. O., Ustinov, V. M., Egorov, A. Yu., and Bougrov, V. E.

Published
2023
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10. 1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers

Author

Blokhin, S. A., Babichev, A. V., Karachinsky, L. Ya., Novikov, I. I., Blokhin, A. A., Bobrov, M. A., Kuzmenkov, A. G., Maleev, N. A., Andryushkin, V. V., Bougrov, V. E., Gladyshev, A. G., Denisov, D. V., Voropaev, K. O., Zhumaeva, I. O., Ustinov, V. M., Li, H., Tian, S. C., Han, S. Y., Sapunov, G. A., Egorov, A. Yu., and Bimberg, D.

Published
2023
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19. Spin-dependent recombination in GaAsN alloys

Author

Kalevich, V. K., Ivchenko, E. L., Afanasiev, M. M., Egorov, A. Yu., Shiryaev, A. Yu., Ustinov, V. M., Pal, B., and Masumoto, Y.

Subjects
Condensed Matter - Materials Science
Abstract

The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the polarization of the exciting light is changed from circular to linear or the transverse magnetic field of ~300 gauss (G) is applied. The interband absorption of the circularly polarized light results in a spin polarization of conduction electrons, which reaches 35% with increasing the pump intensity. The effects observed are explained by dynamical polarization of deep paramagnetic centers and spin-dependent capture of conduction electrons by these centers. The PL depolarization in a transverse magnetic field (Hanle effect) allows us to estimate the electron spin relaxation time in the range of 1 ns. Theoretically, it has been concluded that, due to the SDR, this long time is controlled by slow spin relaxation of bound electrons. In all the three alloy samples, a positive sign of the bound-electron g-factor is determined experimentally from the direction of their mean spin rotation in the magnetic field., Comment: 4 pages, 2 figures, submitted to JETP Letters

Published
2005
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20. Nitrogen local electronic structure in Ga(In)AsN alloys by soft-X-ray absorption and emission: Implications for optical properties

Author

Strocov, V. N., Nilsson, P. O., Schmitt, T., Augustsson, A., Gridneva, L., Debowska-Nilsson, D., Claessen, R., Egorov, A. Yu., Ustinov, V. M., and Alferov, Zh. I.

Subjects
Condensed Matter - Materials Science
Abstract

Soft-X-ray emission and absorption spectroscopies with their elemental specificity are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both valence and conduction bands. In particular, a depletion of the valence band maximum in the N local charge, taking place at the N impurities, appears as one of the fundamental origins of reduced optical efficiency of Ga(In)AsN. Incorporation of In in large concentrations forms In-rich N local environments such as In4N whose the electronic structure evolves towards improved efficiency. Furthermore, a k-character of some valence and conduction states, despite the random alloy nature of Ga(In)AsN, manifests itself in resonant inelastic X-ray scattering., Comment: Major revisions (including new experimental data), 7 pages, 3 Postscript figures, accepted by Phys. Rev. B

Published
2003

21. Monopolar Optical Orientation of Electronic Spins in Semiconductors

Author

Tarasenko, S. A., Ivchenko, E. L., Bel'kov, V. V., Ganichev, S. D., Schowalter, D., Schneider, Petra, Sollinger, M., Prettl, W., Ustinov, V. M., Zhukov, A. E., and Vorobjev, L. E.

Subjects
Condensed Matter
Abstract

It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.

Published
2003

22. Optical Spin Orientation under Inter- and Intra-Subband Transitions in QWs

Author

Tarasenko, S. A., Ivchenko, E. L., Bel'kov, V. V., Ganichev, S. D., Schowalter, D., Schneider, Petra, Sollinger, M., Prettl, W., Ustinov, V. M., Zhukov, A. E., and Vorobjev, L. E.

Subjects
Condensed Matter
Abstract

It is shown that absorption of circularly polarized infrared radiation achieved by inter-subband and intra-subband (Drude-like) transitions results in a monopolar spin orientation of free carriers. The monopolar spin polarization in zinc-blende-based quantum wells (QWs) is demonstrated by the observation of the spin-galvanic and circular photogalvanic effects. It is shown that monopolar spin orientation in n-type QWs becomes possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.

Published
2003

28. Electronic structure of GaAs1-xNx alloy by soft-X-ray absorption and emission: Origin of the reduced optical efficiency

Author

Strocov, V. N., Nilsson, P. O., Augustsson, A., Schmitt, T., Debowska-Nilsson, D., Claessen, R., Egorov, A. Yu., Ustinov, V. M., and Alferov, Zh. I.

Subjects
Condensed Matter - Materials Science
Abstract

The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline GaN, in particular in the conduction band, are dramatic. Employing the orbital character and elemental specificity of the SXE/SXA spectroscopies, we identify a charge transfer from the N atoms at the valence band maximum, reducing the overlap with the wavefunction in conduction band minimum, as the main factor limiting the optical efficiency of GaAs1-xNx alloys. Moreover, a k-conserving process of resonant inelastic x-ray scattering involving the L1 derived valence and conduction states is discovered., Comment: 3 pages, physica status solidi (Rapid Research Notes), in press

Published
2002
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29. Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band

Author

Agrinskaya, N. V., Ivanov, Yu. L., Petrov, P. V., and Ustinov, V. M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons
Abstract

By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of the Hall effect, variable range hopping conductivity and the photoluminescence spectra of the corresponding structures. The experimental data demonstrated that the binding energy of the A+ states significantly increases with respect to 3D case and strongly depends on well width (9nm,15nm). The localization radii of the A+ states are of the order of well widths., Comment: 6 pages, 5 figures

Published
2002
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30. Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction.

Author

Blokhin, S. A., Bobrov, M. A., Blokhin, A. A., Maleev, N. A., Kuzmenkov, A. G., Vasyl'ev, A. P., Rochas, S. S., Babichev, A. V., Novikov, I. I., Karachinsky, L. Ya., Gladyshev, A. G., Denisov, D. V., Voropaev, K. O., Egorov, A. Yu., and Ustinov, V. M.

Subjects
SURFACE emitting lasers, OPTICAL losses, QUANTUM efficiency, EPITAXY
Abstract

Abstract—The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaA-sP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08 and 0.14% per one pass (round-trip) at temperatures of 20 and 90°C, respectively. [ABSTRACT FROM AUTHOR]

Published
2023
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39. Avalanche photodiodes based on InAlAs/InGaAs heterostructures with sulfide–polyamide passivation of mesa structures

Author

Maleev, N. A., primary, Kuzmenkov, A. G., additional, Kulagina, M. M., additional, Guseva, Yu. A., additional, Vasil’ev, A. P., additional, Blokhin, S. A., additional, Bobrov, M. A., additional, Troshkov, S. I., additional, Andryushkin, V. V., additional, Kolodeznyi, E. S., additional, Bougrov, V. E., additional, and Ustinov, V. M., additional

Published
2022
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40. 1.55-µm range optical transmitter based on a vertical-cavity surface-emitting laser

Author

Blokhin, S. A., primary, Babichev, A. V., additional, Karachinsky, L. Ya., additional, Novikov, I. I., additional, Blokhin, A. A., additional, Bobrov, M. A., additional, Kovach, Y. N., additional, Maleev, N. A., additional, Kulikov, A. V., additional, Bougrov, V. E., additional, Varzhel, S. V., additional, Voropaev, K. O., additional, Ustinov, V. M., additional, and Egorov, A. Yu., additional

Published
2022
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