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The work presents the extended theoretical model of the electrical conductance in non-magnetic and magnetic nano-size point contacts. The developed approach describes diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved conductance. It is based on the electron transport through metallic junction within approach of the circular constriction. The model provides unified description of the contact resistance from Maxwell diffusive through the ballistic to purely quantum transport regimes without any residual terms depending from the scale. An application are given for experimental treatment of the golden nanocontacts as a non-magnetic case and Permalloy nanowire with/without domain wall as example for the magnetic system. The model of quantum point contact assumes that contact area can be replaced by the quantum object (i.e. magnetic tunnel junction, narrow domain wall, etc.), where potential energy profile determine its electrical properties., Comment: 4 fugures

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and nonmagnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in literature., Comment: 9 pages, 6 figures

In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained within the tunneling model, where NP is simulated as a quantum well (QW). The coherent (direct) double barrier tunneling is dominating over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry., Comment: 4 pages, 5 figures