1. Transient out-of-SOA robustness of SiC power MOSFETs
- Author
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Asad Fayyaz, Nicholas G. Wright, Alberto Castellazzi, Andrea Irace, Michele Riccio, G. Romano, J. Urresti-Ibanez, Castellazzi, Alberto, Fayyaz, Asad, Romano, Gianpaolo, Riccio, Michele, Irace, Andrea, Urresti ibanez, Jesu, and Wright, Nick
- Subjects
010302 applied physics ,Silicon Carbide ,business.industry ,Computer science ,020208 electrical & electronic engineering ,Electrical engineering ,02 engineering and technology ,Technology development ,Converters ,01 natural sciences ,Avalanche breakdown ,Safe operating area ,Current limiting ,Engineering (all) ,Robustness (computer science) ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Robustne ,Power semiconductor device ,Power MOSFET ,Semiconductor Device Reliability ,business ,Wide Band Gap Semiconductor - Abstract
Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements.
- Published
- 2017