Search

Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented., Comment: 6 pages, 4 figures

An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for resonant generation of the particle accelerating field. The etch rate non-uniformity due to depletion of the radicals has been overcome by the simultaneous movement of the gas flow inlet and the inner electrode. An effective shape of the inner electrode to reduce the plasma asymmetry for the coaxial cylindrical rf plasma reactor is determined and implemented in the cavity processing method. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise way to establish segmented plasma columns. The test structure was a pillbox cavity made of steel of similar dimension to the standard SRF cavity. This was adopted to experimentally verify the plasma surface reaction on cylindrical structures with variable diameter using the segmented plasma generation approach. The pill box cavity is filled with niobium ring- and disk-type samples and the etch rate of these samples was measured., Comment: 8 pages, 10 figures

The reduction of the asymmetry in the plasma sheath voltages of a cylindrical coaxial capacitively coupled plasma is crucial for efficient surface modification of the inner surfaces of concave three-dimensional structures, including superconducting radio frequency cavities. One critical asymmetry effect is the negative dc self-bias, formed across the inner electrode plasma sheath due to its lower surface area compared to the outer electrode. The effect on the self-bias potential with the surface enhancement by geometric modification on the inner electrode structure is studied. The shapes of the inner electrodes are chosen as cylindrical tube, large and small pitch bellows, and disc-loaded corrugated structure (DLCS). The dc self-bias measurements for all these shapes were taken at different process parameters in Ar/Cl2 discharge. The reversal of the negative dc self-bias potential to become positive for a DLCS inner electrode was observed and the best etch rate is achieved due to the reduction in plasma asymmetry., Comment: 5 pages, 8 figures

An rf coaxial capacitively coupled Ar/Cl2 plasma is applied to processing the inner wall of superconducting radio frequency cavities. A dc self-bias potential is established across the inner electrode sheath due to the surface area difference between inner and outer electrodes of the coaxial plasma. The self-bias potential measurement is used as an indication of the plasma sheath voltage asymmetry. The understanding of the asymmetry in sheath voltage distribution in coaxial plasma is important for the modification of the inner surfaces of three dimensional objects. The plasma sheath voltages were tailored to process the outer wall by providing an additional dc current to the inner electrode with the help of an external dc power supply. The dc self-bias potential is measured for different diameter electrodes and its variation on process parameters such as gas pressure, rf power and percentage of chlorine in the Ar/Cl2 gas mixture is studied. The dc current needed to overcome the self-bias potential to make it zero is measured for the same process parameters.

The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task, because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial RF discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, RF power, DC bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

Plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl2/Ar plasma etching has to address several crucial parameters which influence the etching rate and surface roughness, and eventually, determine cavity performance. This includes dependence of the process on the frequency of the RF generator, gas pressure, power level, the driven (inner) electrode configuration, and the chlorine concentration in the gas mixture during plasma processing. To demonstrate surface layer removal in the asymmetric non-planar geometry, we are using a simple cylindrical cavity with 8 ports symmetrically distributed over the cylinder. The ports are used for diagnosing the plasma parameters and as holders for the samples to be etched. The etching rate is highly correlated with the shape of the inner electrode, radio-frequency (RF) circuit elements, chlorine concentration in the Cl2/Ar gas mixtures, residence time of reactive species and temperature of the cavity. Using cylindrical electrodes with variable radius, large-surface ring-shaped samples and d.c. bias implementation in the external circuit we have demonstrated substantial average etching rates and outlined the possibility to optimize plasma properties with respect to maximum surface processing effect.