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432 results on '"Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL)"'

1. Growth and Memory Effect of Ge in GaAs Epilayers Grown in UHV Environment Using IBGe

Author

Abderraouf Boucherif, Mohammad Reza Aziziyan, Richard Arès, Roxana Arvinte, Simon Fafard, Alex Brice Poungoué Mbeunmi, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Germanium, GaAs, 05 social sciences, UHV environment, memory effect, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], IBGe, 0502 economics and business, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Chemical Beam Epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 050207 economics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; The growth of Germanium (Ge) with iso-butyl germane (IBGe) as germanium source and the study of Ge memory effect in GaAs grown in UHV environment (Chemical beam epitaxy CBE reactor) is presented. High quality Ge epilayers were grown and a strong Ge memory effect was found in GaAs epilayers grown in the same reactor.

Published
2019

2. Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

Author

Gilles Patriarche, Mourad Jellite, Nadi Braidy, Dominique Drouin, Richard Arès, Ali Soltani, Maksym Myronov, Abderraouf Boucherif, Youcef A. Bioud, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), University of Warwick [Coventry], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, Science, TK, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Article, General Biochemistry, Genetics and Molecular Biology, [SPI]Engineering Sciences [physics], Surfaces, interfaces and thin films, Etching (microfabrication), 0103 physical sciences, Lasers, LEDs and light sources, Porous materials, Wafer, lcsh:Science, ComputingMilieux_MISCELLANEOUS, QC, 010302 applied physics, Nanoscale materials, Multidisciplinary, business.industry, General Chemistry, Orders of magnitude (numbers), 021001 nanoscience & nanotechnology, chemistry, Optoelectronics, lcsh:Q, Photonics, Dislocation, 0210 nano-technology, business, Layer (electronics), Materials for optics
Abstract

The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process. Dislocations are eliminated from the epilayer through dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nanovoids that attract dislocations, facilitating their subsequent annihilation. The averaged dislocation density is reduced by over three orders of magnitude, from ~108 cm−2 to a lower-limit of ~104 cm−2 for 1.5 µm thick Ge layer. The optical properties indicate a strong enhancement of luminescence efficiency in GaAs grown on this virtual substrate. Collectively, this work demonstrates the promise for transfer of this technology to industrial-scale production of integrated photonic and optoelectronic devices on Si platforms in a cost-effective way., The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drastically reduce the the defect density.

Published
2019

3. Achieving High Quality Factor Without Vacuum Packaging by High Density Proof Mass Integration in Vibration Energy Harvesters

Author

Luc G. Fréchette, A. Dompierre, Srikar Vengallatore, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), and Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2)

Subjects
Physics, Cantilever, Mechanical Engineering, 020208 electrical & electronic engineering, 02 engineering and technology, Mechanics, 021001 nanoscience & nanotechnology, Piezoelectricity, Vibration, [SPI]Engineering Sciences [physics], Drag, Q factor, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Proof mass, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Order of magnitude, Energy (signal processing)
Abstract

This paper presents a simple approach to control fluidic damping, and thereby improve the mechanical quality factor at ambient pressure, of AlN-based piezoelectric resonant energy harvesters by using high density proof masses. Using models adapted from the literature, and accounting for the simultaneous transverse and rotational motion of the cantilever beam, scaling laws are extracted for the fluidic quality factor, ${Q}_{\mathrm {f}}$ , as a function of the fluid damping regime, either due to drag or squeeze film forces. Subsequently, we demonstrate the utility of the scaling laws by characterizing silicon-based devices and tungsten tip masses. By accounting for other damping sources and the device operating frequency, we achieve close to an order of magnitude improvement on ${Q}_{\mathrm {f}}$ with this strategy, going from 398 to 4193. Beside potential for footprint reductions and higher power outputs, these results suggest that high density proof mass integration can be an alternative to vacuum packaging for MEMS based vibration energy harvesting.

Published
2019

4. Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

Author

Ali Soltani, Meriem Bouchilaoun, Samuel Graham, Georges Pavlidis, Hassan Maher, Christophe Rodriguez, Adrien Cutivet, Bilal Hassan, Francois Boone, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), OMMIC, Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Optoélectronique - IEMN (OPTO - IEMN), and This work was supported in part by the Fonds quèbècois de la recherche sur la nature et les technologies (FRQNT) and in part by the Natural Sciences and Engineering Research Council of Canada (NSERC). The review of this paper was arranged by Editor R. Venkatasubramanian

Subjects
Materials science, Thermal resistance, Gallium nitride, High-electron-mobility transistor, 01 natural sciences, Temperature measurement, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, gate resistance thermometry (GRT), law, 0103 physical sciences, Thermal, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, high-electron-mobilitytransistors (HEMTs), business.industry, Transistor, modeling, Electronic, Optical and Magnetic Materials, chemistry, Gallium nitride (GaN), Logic gate, Optoelectronics, thermoreflectance, Transient (oscillation), business, transient temperature measurement
Abstract

International audience; Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs' temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors' knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.

Published
2019

5. Experimental and numerical investigation of biosensors plasmonic substrates induced differences by e-beam, soft and hard UV-NIL fabrication techniques

Author

M. Lamy de la Chapelle, Mondher Besbes, J-F. Bryche, Julien Moreau, Michael Canva, Philippe Gogol, Frédéric Hamouda, Bernard Bartenlian, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Fabry / Biophotonique, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Institut des Molécules et Matériaux du Mans (IMMM), and Le Mans Université (UM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Fabrication, lcsh:TK7800-8360, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Nanoimprint lithography, law.invention, symbols.namesake, E-beam lithography, law, lcsh:Technology (General), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Lithography, Plasmon, SERS, business.industry, SPRI, lcsh:Electronics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Characterization (materials science), [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, symbols, lcsh:T1-995, Plasmonics, Optoelectronics, UV-NIL, 0210 nano-technology, business, Biosensor, Electron-beam lithography, Raman scattering
Abstract

This paper compares plasmonic substrates manufactured by three lithography methods: E-beam, soft and hard UV NanoImprint Lithography. The different plasmonic modes existing in samples made of an array of gold nanostructures on gold film are investigated for biochemical detections taking advantage of Surface Plasmon Resonance Imaging (SPRI) and Surface-Enhanced Raman Scattering (SERS). Recently, it has been shown that this geometry of substrate is of great interest for both SPRI and SERS measurements. A comparison of their performances obtained by the different lithographic methods is provided. In particular, due to limitations in NanoImprint Lithographic techniques, the impact of sidewall geometry of nanostructures is investigated in regard to plasmonic properties. Thus, experimental optical characterization analyses have been carried out on samples and compared with the numerical simulations. Keywords: Plasmonics, E-beam lithography, Nanoimprint lithography, UV-NIL, SPRI, SERS

Published
2019

6. Comparison of environmental assessment methodology in hybrid energy system simulation software

Author

Hemant Sharma, Elise Monnier, Guillaume Mandil, Peggy Zwolinski, Stéphane Colasson, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Conception Produit Process (G-SCOP_CPP ), Laboratoire des sciences pour la conception, l'optimisation et la production (G-SCOP), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ARC-Nucleart CEA Grenoble (NUCLEART), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES), CIRCULAR, ANR-15-IDEX-0002,UGA,IDEX UGA(2015), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES)

Subjects
Environmental analysis, Downstream (software development), Computer science, 020209 energy, 02 engineering and technology, 010501 environmental sciences, TRNSYS, computer.software_genre, 7. Clean energy, 01 natural sciences, [SPI]Engineering Sciences [physics], Software, 0202 electrical engineering, electronic engineering, information engineering, Environmental impact assessment, ComputingMilieux_MISCELLANEOUS, 0105 earth and related environmental sciences, General Environmental Science, Upstream (petroleum industry), business.industry, Fossil fuel, Simulation software, Risk analysis (engineering), 13. Climate action, General Earth and Planetary Sciences, business, computer
Abstract

The advent of renewable energy systems has led to an increase in decentralised energy systems. Consequently, the last 10 years have seen development of specialised software such as HOMER, iHOGA, EnergyPro, RETScreen and TRNSYS to analyse these systems. This study compares these software in detail especially in terms of the environmental assessment. It is concluded that these software do not adequately include environmental analysis since only 1 out of 5 software considers more than one life cycle stage, neglecting other upstream/downstream emissions. Furthermore, the emphasis is on emissions such as NOx and SO2 that are usually associated with fossil fuel utilization. As the energy systems are becoming increasingly complex, especially with storage technologies such as hydrogen and batteries, emissions ‘shift’ away from the operating stage. Moreover, it becomes essential to look further than global warming potential and take into account other impacts such as depletion of critical materials, acidification, eco-toxicity, etc. Hence, it becomes essential to take into account entire life cycle stages and provide comprehensive environmental impacts along with the already available techno-economic capabilities to the designers and decision-makers. Finally, this study provides recommendations on the methodology to include environmental analysis in the investigated software.

Published
2019

7. Binding strategies for capturing and growing Escherichia coli on surfaces of biosensing devices

Author

Sébastien Choinière, Jan J. Dubowski, Eric Frost, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Université de Sherbrooke (UdeS), and Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT)

Subjects
Antibiotic resistance, [SDV]Life Sciences [q-bio], Aptamer, Green Fluorescent Proteins, Gallium, Biosensing Techniques, 02 engineering and technology, Bacterial growth, Ligands, medicine.disease_cause, 01 natural sciences, Antibodies, Arsenicals, Fluorescence, Analytical Chemistry, chemistry.chemical_compound, Escherichia coli, medicine, Animals, Antibody, Growth medium, Escherichia coli K12, biology, Goats, 010401 analytical chemistry, NeutrAvidin, Avidin, 021001 nanoscience & nanotechnology, biology.organism_classification, 0104 chemical sciences, chemistry, Biotinylation, biology.protein, Biophysics, 0210 nano-technology, Chickens, Biosensor, Bacteria detection, Bacteria, Surface capture
Abstract

Antibiotic resistant bacteria have become a threat to world health. An advanced method of detection, based on the matrix assisted laser desorption ionisation time-of-flight mass spectroscopy can identify bacteria relatively rapidly, but it is not suitable to measure bacterial antibiotic resistance. Biosensors may be able to detect resistance by monitoring growth after capture on sensor surfaces but this option has not been addressed adequately. We have evaluated the growth of Escherichia coli after capture in 96 well microplates and observed that growth/capture efficiency was relatively similar for antibody-based techniques, but non-specific capture varied considerably. We confirm that neutravidin binds E. coli non-specifically, which limited its use with biotinylated antibodies or aptamers. Centrifugation enhanced bacterial growth/capture considerably, indicating that procedures enhancing the interaction between bacteria and surface-bound antibody have the potential to improve growth efficiency. Capture and growth required larger numbers of bacteria than capture and detection on biosensor surfaces. Previously, we reported that the minimum concentration of live E. coli required for initiating growth on a GaAs/AlGaAs biosensor was ~ 10 5 CFU/mL [Nazemi et al., Talanta 178 (2018) 69-77], and we speculated that this could be related to the poisonous effect of Ga- and As-ions released during dark corrosion of the biosensor, however in the present report we observed that the same minimum concentration of E. coli was required for growth in an ELISA plate. Thus, we argue that this limitation was related rather to bacterial inhibition by the capture antibodies. Indeed, antibodies at titres designed to capture bacteria inhibited bacterial growth when the bacteria were added to growth medium at titres less than 10 5 CFU/mL, indicating that antibodies may be responsible for the higher limits of sensitivity due to their potential to restrict bacterial growth. However, we did not observe E. coli release after 6 h following the capture indicating that these bacteria did not degrade antibodies.

Published
2019

8. Early detection of bacteria using SPR imaging and event counting: experiments withListeria monocytogenesandListeria innocua

Author

Alexandra Morlay, Thierry Livache, Marine Boulade, Yoann Roupioz, Michael Canva, Paul G. Charette, Félix Piat, Loïc Leroy, Laboratoire Charles Fabry / Biophotonique, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Chimie pour la Reconnaissance et l’Etude d’Assemblages Biologiques (CREAB), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Prestodiag, Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and ANR-17-EURE-0003,CBH-EUR-GS,CBH-EUR-GS(2017)

Subjects
Identification methods, Spr imaging, Chromatography, biology, Chemistry, General Chemical Engineering, Early detection, 02 engineering and technology, General Chemistry, 010402 general chemistry, 021001 nanoscience & nanotechnology, medicine.disease_cause, biology.organism_classification, [SDV.MP.BAC]Life Sciences [q-bio]/Microbiology and Parasitology/Bacteriology, 01 natural sciences, Rapid detection, 0104 chemical sciences, Listeria monocytogenes, [SDV.IDA]Life Sciences [q-bio]/Food engineering, Surface plasmon resonance imaging, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, medicine, Listeria, 0210 nano-technology, Bacteria
Abstract

International audience; Foodborne pathogens are of significant concern in the agrifood industry and the development of associated rapid detection and identification methods are of major importance. This paper describes the novel use of resolution-optimized prism-based surface plasmon resonance imaging (RO-SPRI) and data processing for the detection of the foodborne pathogens Listeria monocytogenes and Listeria innocua. With an imaging spatial resolution on the order of individual bacteria (2.7 AE 0.5 mm  7.9 AE 0.6 mm) over a field of view 1.5 mm 2 , the RO-SPRI system enabled accurate counting of individual bacteria on the sensor surface. Using this system, we demonstrate the detection of two species of Listeria at an initial concentration of 2  10 2 CFU mL À1 in less than 7 hours. The surface density of bacteria at the point of positive detection was 15 AE 4 bacteria per mm 2. Our approach offers great potential for the development of fast specific detection systems based on affinity monitoring.

Published
2019

9. A fabrication process for self-connected horizontal SiGe nanowires

Author

Dominique Drouin, M. Merhej, Serge Ecoffey, Thierry Baron, B. Lee Sang, Sylvain David, Benattou Sadani, Bassem Salem, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université de Sherbrooke (UdeS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Materials science, Fabrication, Vapor-liquid-solid (VLS) growth, Nanowire, Oxide, 02 engineering and technology, Chemical vapor deposition, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Planar, 0103 physical sciences, Electrical and Electronic Engineering, 010302 applied physics, Horizontal growth, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Nanotrenches, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Silicon-germanium, chemistry, Electrode, Silicon germanium nanowire (SiGe NW), Optoelectronics, 0210 nano-technology, business, Layer (electronics)
Abstract

International audience; We present in this paper a low thermal budget process for self-connecting horizontal silicon-germanium nanowires. The guided nanowires on amorphous oxide layer have been elaborated by a chemical vapor deposition (CVD), using vapor-liquid-solid (VLS) mechanism, via a gold catalyst. We have optimized the growth parameters on reference samples with pre-patterned electrodes on SiO 2 /Si substrate. To control and eliminate the random growth of horizontal NWs, we have developed a technological process to guide these nanowires in nanotrenches created in the oxide to locate gold catalysts and confine planar growth. The silicon germanium nanowire (SiGe NW) connected the predefined electrodes showed an electrical behavior of an intrinsic SiGe NW.

Published
2020

10. Experimental and numerical study of micro-pin-fin heat sinks with variable density for increased temperature uniformity

Author

Jérôme Barrau, Manel Ibañez, Luc G. Fréchette, Montse Vilarrubí, Gerard Laguna, Sara Riera, Mohamed Omri, Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Departamento de Medio Ambiente y Ciencias del Suelo, and Universitat de Lleida

Subjects
Microchannel, Materials science, 020209 energy, Thermal resistance, Flow (psychology), General Engineering, Reynolds number, 02 engineering and technology, Mechanics, Heat sink, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Fin (extended surface), [SPI]Engineering Sciences [physics], symbols.namesake, Heat flux, Heat exchanger, 0202 electrical engineering, electronic engineering, information engineering, symbols, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Current technologies for the cooling of high power integrated circuits (IC) chips employ single-phase liquid flow through microchannel heat sinks. The surface temperature in these devices increases along the flow direction, leading to temperature nonuniformities in the cooled device. Mitigation of this temperature nonuniformity, while enhancing the heat exchange along the flow path, has been demonstrated through the use of variable fin density microchannels. This paper demonstrates experimentally and numerically the potential of micro-pin-fin heat sinks as an effective alternative to microchannel heat sinks for dissipating high heat fluxes from small areas. Results from this experimental and numerical investigation demonstrate the ability of variable pin-fin density with offset configurations to reach low thermal resistance coefficients and reduce the surface temperature nonuniformity while presenting low-pressure drops. For the maximum Reynolds number considered in this study (2200), we demonstrate the capacity of the cooling scheme, when submitted to a heat flux of 50 W/cm2, to reach a pumping to chip power ratio of 0.37%, a thermal resistance coefficient of 0.26 cm2 K/W and a temperature uniformity along the 5 cm long cooling device of 2 °C.

Published
2018

11. How Art Places Climate Change at the Heart of Technological Innovation

Author

Jeanne Bloch, Céline Verchère, Département d'Humanités et Sciences Sociales de l'École polytechnique (X-DEP-HSS), École polytechnique (X), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
0106 biological sciences, lcsh:Management. Industrial management, Sociology and Political Science, Architectural lighting design, visual art, Psychology of self, choreography, Climate change, lcsh:Business, Development, 01 natural sciences, [SHS]Humanities and Social Sciences, Phenomenology (philosophy), 03 medical and health sciences, 0302 clinical medicine, ddc:650, dance, Sociology, ComputingMilieux_MISCELLANEOUS, food culture, art-thinking, light pollution, Environmental ethics, sustainability, innovation, 010601 ecology, Choreography, Climate change mitigation, climate change, lcsh:HD28-70, light design, Sustainability, phenomenology, lcsh:HF5001-6182, General Economics, Econometrics and Finance, 030217 neurology & neurosurgery, Meaning (linguistics)
Abstract

How can we place climate change issues at the heart of technological innovation? From our point of view, artistic practice is a powerful tool to infuse sustainability dimensions into technological developments. By using a sensitive approach based on a dialogue with his/her inner self, the artist questions the nature and meaning of technological developments and therefore appeals to users&rsquo, deep motivations. We explore first how the artist inner self engagement in the creation process relates to climate change mitigation. Then, through a qualitative survey-type experimentation derived from Jeanne Bloch&rsquo, s art-tech installation, we expose how the confrontation with a panel of users helps to understand the characteristics of the dialogue an artist engages in with an &ldquo, immersed&rdquo, audience, particularly on the issue of climate change.

Published
2019

12. Dielectric characterization of vegetation at L band using an open-ended coaxial probe

Author

A. Mavrovic, A. Roy, A. Royer, B. Filali, F. Boone, C. Pappas, O. Sonnentag, Centre d'Applications et de Recherches en TELédétection [Sherbrooke] (CARTEL), Département de géomatique appliquée [Sherbrooke] (UdeS), Université de Sherbrooke (UdeS)-Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Permittivity, Atmospheric Science, L band, 010504 meteorology & atmospheric sciences, lcsh:QC801-809, 0211 other engineering and technologies, Relative permittivity, Geology, Soil science, 02 engineering and technology, Dielectric, Vegetation, 15. Life on land, Oceanography, 01 natural sciences, Black spruce, lcsh:Geophysics. Cosmic physics, Diurnal cycle, [SDE]Environmental Sciences, Environmental science, ComputingMilieux_MISCELLANEOUS, Microwave, 021101 geological & geomatics engineering, 0105 earth and related environmental sciences
Abstract

Decoupling the integrated microwave signal originating from soil and vegetation remains a challenge for all microwave remote sensing applications. To improve satellite and airborne microwave data products in forest environments, a precise and reliable estimation of the relative permittivity (ε=ε′-iε′′) of trees is required. We developed an open-ended coaxial probe suitable for in situ permittivity measurements of tree trunks at L-band frequencies (1–2 GHz). The probe is characterized by uncertainty ratios under 3.3 % for a broad range of relative permittivities (unitless), [2–40] for ε′ and [0.1–20] for ε′′. We quantified the complex number describing the permittivity of seven different tree species in both frozen and thawed states: black spruce, larch, red spruce, balsam fir, red pine, aspen and black cherry. Permittivity variability is substantial and can range up to 300 % for certain species. Our results show that the permittivity of wood is linked to the freeze–thaw state of vegetation and that even short winter thaw events can lead to an increase in vegetation permittivity. The open-ended coaxial probe proved to be precise enough to capture the diurnal cycle of water storage inside the trunk for the length of the growing season.

Published
2018

13. Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices

Author

Bassem Salem, M. Baira, Niyaz Ahamad Madhar, Bouraoui Ilahi, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon)

Subjects
[PHYS]Physics [physics], 010302 applied physics, Materials science, business.industry, Infrared, 02 engineering and technology, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 7. Clean energy, Wavelength, Quantum dot, 0103 physical sciences, Optoelectronics, General Materials Science, Light emission, Direct and indirect band gaps, Electrical and Electronic Engineering, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Astrophysics::Galaxy Astrophysics, Cmos compatible
Abstract

In this work, interband and intraband optical transitions from direct bandgap strained GeSn/Ge quantum dots are numerically tuned by evaluating the confined energies for heavy holes and electrons in Г-and L-valley. The practically exploitable emission wavelength ranges for efficient use in light emission and sensing should fulfill specific criteria imposing the electrons confined states in Г-valley to be sufficiently below those in L-valley. This study shows that GeSn quantum dots offer promising opportunity towards high efficient group IV based infrared optical devices operating in the mid-IR and far-IR wavelength regions.

Published
2018

14. Metastable States in Pressurized Bulk and Mesoporous Germanium

Author

Richard Arès, Patrice Mélinon, Denis Machon, S. Radescu, Andrés Mujica, Abderraouf Boucherif, Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Universidad de La Laguna [Tenerife - SP] (ULL), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)

Subjects
Phase transition, Materials science, chemistry.chemical_element, Nanoparticle, Germanium, 02 engineering and technology, 01 natural sciences, [SPI]Engineering Sciences [physics], Chemical structure, Metastability, Phase (matter), 0103 physical sciences, Physical and Theoretical Chemistry, 010306 general physics, Porosity, Compression, Energy landscape, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, General Energy, Chemical engineering, chemistry, Phase transitions, Nanoparticles, 0210 nano-technology, Mesoporous material
Abstract

International audience; Combination of porosity and hydrostaticity during compression is used with a view to explore the energy landscape of germanium. In this work, pressure-induced phase transformations in mesoporous crystalline Ge has been investigated by in situ Raman spectroscopy. A pressure-induced amorphization to a low-density amorphous (LDA) state was observed prior to a reversible polyamorphic transformation between LDA and high-density amorphous states. These pressure-induced transformations show some similarities with the behavior previously reported in nanoparticles. Thermodynamics models developed in the case of nanoparticles are successfully used indicating that, in both cases, the large surface-to-volume ratio leads to an increase of the system energy and that mesoporous materials may be considered as the negative image of a collection of nanoparticles. However, an inhomogeneous stress distribution is expected in porous materials because of it being a network with hyperbolic geometry. A control experiment is presented using a reference bulk germanium sample. The diamond-to-β-tin transformation is observed starting at around 8.0 GPa. On decompression, the metastable ST12 (Ge-III) phase is observed. Ab initio simulations are used to assign and interpret Raman spectra of this phase.

Published
2018

15. Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI

Author

Abdelkader Souifi, Dominique Drouin, Getenet Tesega Ayele, Serge Ecoffey, Frederic Boeuf, Stephane Monfray, Jean-Pierre Cloarec, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), STMicroelectronics [Crolles] (ST-CROLLES), INL - Chimie et Nanobiotechnologies (INL - C&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Dispositifs Electroniques (INL - DE), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon on insulator, Aluminum oxide, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, ion-sensitive field-effect transistor (ISFET), 01 natural sciences, Reference electrode, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, fully-depleted silicon-on-insulator (FDSOI), ComputingMilieux_MISCELLANEOUS, 010302 applied physics, back-end-of-line (BEOL), business.industry, Transistor, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, extended gate, CMOS, Logic gate, Electrode, capacitive coupling, Optoelectronics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Sensitivity (electronics), Signal amplification, Hardware_LOGICDESIGN, Biotechnology
Abstract

This paper reports ultrahigh-sensitive and ultralow-power CMOS compatible pH sensors that are developed in the back-end-of-line (BEOL) of industrial 28-nm ultrathin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) transistors. Fabricating the sensing gate and the control gate of the sensors in a capacitive divider circuit, CMOS compatible pH sensors are demonstrated where the front gate bias is applied through a control gate rather than a bulky reference electrode. On the other hand, the strong electrostatic coupling between the front gate and the back gate of FDSOI devices provide an intrinsic signal amplification feature for sensing applications. Utilizing an atomic layer deposited aluminum oxide (Al2O3) as a pH sensing film, pH sensors having a sensitivity of 475 mV/pH and 730 mV/pH in the extended gate and BEOL configuration, respectively, are reported. Sensitivities of both configurations are superior to state-of-the-art low power ion-sensitive field-effect transistors. The small sensing area and the FDSOI-based low power technology of the device make the sensors ideal for the IoT market. The proposed approach has been validated by TCAD simulation, and demonstrated through experimental measurements on proof-of-concept extended gate pH sensors and on sensors that are developed in the BEOL of industrial UTBB FDSOI devices.

Published
2018

16. Formation Kinetics of Mixed Self-Assembled Monolayers of Alkanethiols on GaAs(100)

Author

Jan J. Dubowski, Céline Elie-Caille, Walid M. Hassen, Thérèse Leblois, Khalid Moumanis, Vivien Lacour, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Kinetics, Infrared spectroscopy, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], Monolayer, Electrochemistry, Organic chemistry, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spectroscopy, ComputingMilieux_MISCELLANEOUS, [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], chemistry.chemical_classification, Chemistry, Self-assembled monolayer, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Solvent, Chemical engineering, Thiol, 0210 nano-technology, Biosensor
Abstract

International audience; We report on the formation kinetics of mixed self-assembled monolayers (SAMs) comprising 16-mercaptohexadecanoic acid (MHDA) and 11-mercapto-1-undecanol (MUDO) thiols on GaAs(100) substrates. These compounds were selected for their potential in constructing highly selective and efficient architectures for biosensing applications. The molecular composition and quality of one-compound and mixed SAMs were determined by the Fourier transform infrared absorption spectroscopy measurements. The formation of enhanced-quality mixed SAMs was investigated as a function of the molecular composition of the thiol mixture and the proportion of ethanol/water solvent used during their arrangement. Furthermore, the formation of mixed SAMs has been carried out by successive immersion of MHDA SAMs in MUDO thiol solutions and MUDO SAMs in MHDA thiol solution through the process involving thiol-thiol substitution. Our results, in addition to confirming that water-ethanol-based solvents improve the packing density of single thiol monolayers, demonstrate the attractive role of water-ethanol solvents in forming superior quality mixed SAMs.

Published
2017

17. Impact of Via Hole Integration on Multijunction Solar Cells for Through Cell Via Contacts and Associated Passivation Treatment

Author

Clément Colin, Abdelatif Jaouad, Mathieu de Lafontaine, Richard Arès, Simon Fafard, Vincent Aimez, Maxime Darnon, Boussairi Bouzazi, Maite Volatier, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Passivation, 02 engineering and technology, 01 natural sciences, 7. Clean energy, Temperature measurement, through cell via contacts, multijunc- tion solar cells, law.invention, chemistry.chemical_compound, law, Etching (microfabrication), Index Terms—Concentrated photovoltaics (CPVs), 0103 physical sciences, Solar cell, passivation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 010302 applied physics, business.industry, Triple junction, [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.PLASMA]Engineering Sciences [physics]/Plasmas, via holes, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Ammonium sulfide, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Quantum efficiency, 0210 nano-technology, business, Voltage
Abstract

International audience; —The impact of via etching on triple junction solar cell performance has been investigated for through cell via contact ar-chitectures. Triple junction solar cells with standard top and back contacts have been fabricated and vias have been etched through the subcells to investigate the new geometry proposed. The external quantum efficiency, the open-circuit voltage (V o c), the fill factor (FF), and the ideality factor have been measured and compared to those of standard triple junction solar cells without vias. In this way, we evaluate the losses attributable to via etching. Small performance losses from via integration are observed, but performance can be partially restored with an ammonium sulfide passivation treatment. Furthermore, the results show that the V o c losses are almost absent at the high sun concentration that the new architecture is designed for. The source of the performance degradation is correlated with a larger total surface recombination at the edges of the device. The passivation treatment allows an effective surface passivation of the via holes.

Published
2017

18. Wet Metallization of High Aspect Ratio TSV Using Electrografted Polymer Insulator to Suppress Residual Stress in Silicon

Author

Gitanjali Kolhatkar, Andreas Ruediger, Gessie Brisard, Thomas Dequivre, Azza Hadj Youssef, Serge A. Charlebois, Xuan T. Le, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), and Institut National de la Recherche Scientifique [Québec] (INRS)

Subjects
Dielectric, Fabrication, Materials science, Silicon, Isolation technology, Electrografting, Polymer films, Keep Out Zone, chemistry.chemical_element, 02 engineering and technology, Electronic packaging, 7. Clean energy, 01 natural sciences, Through Silicon Vias, Stress (mechanics), [SPI]Engineering Sciences [physics], Stress measurement, Residual stress, Microsystem, 0103 physical sciences, Electronic engineering, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Silicon oxide, 010302 applied physics, chemistry.chemical_classification, business.industry, Polymer, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Microfabrication, 0210 nano-technology, business, Layer (electronics), Three-dimensional integrated
Abstract

International audience; Through-Silicon-Vias (TSV) are the key to 3D integrated microsystems. Their fabrication leads to reliability issues linked to the thermo-mechanical stress induced in the silicon around the vias. In this work, we propose to reduce the silicon residual stress in high aspect ratio copper TSVs (HAR TSV) using an electrografted polymer insulator, poly-4-vinylpyridine (P4VP), in replacement of the traditional silicon oxide layer. We use Raman spectroscopy to make the first investigation of the residual stress in the Si around P4VP insulated TSVs and compare it to SiO2 insulated TSVs. The results show that P4VP acts as a stress buffer layer because of its particular mechanical properties as the measured residual stress in Si is significantly reduced at room temperature around the polymer insulated HAR TSVs. The potential benefits of such a technology are not only a better thermo-mechanical reliability of 3D integrated microsystem, but also a greater integration density.

Published
2017

19. Performance validation of printed strain sensors for active control of intelligent tires

Author

J. Kim, Hassan Hariri, Woo Soo Kim, Patrice Masson, Luc G. Fréchette, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Test bench, Engineering, Acoustics and Ultrasonics, Noise (signal processing), business.industry, Capacitive sensing, Acoustics, 02 engineering and technology, Structural engineering, 021001 nanoscience & nanotechnology, 01 natural sciences, Signal, Dynamic load testing, Vehicle dynamics, [SPI]Engineering Sciences [physics], Transducer, 0103 physical sciences, Noise control, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

To ensure safety and comfort, the automotive industry employs sensors to monitor the vehicle dynamics, with growing interest in intelligent tires. This paper specifically presents the design and validation of a dynamic load sensor proposed for integration in tires to allow active control of noise inside the cabin of the car. The concept of using tire surface strain measurement is first experimentally investigated using a quarter-car test bench, through coherence evaluation between the vertical force injected at the wheel hub and the out-of-plane velocity field over the lateral surface of the tire, as measured using a scanning laser Doppler vibrometer (LDV). The tire sidewall deformations are found to correlate well with vertical road excitations, suggesting that strain measurement on the tires could a useful signal for noise control. Specifications are then established for a sensor to measure strain on the tire, leading to the design and fabrication of a Capacitive Strain Transducer (CST) using printed electrodes on a flexible substrate. A number of CSTs are bonded on the tire and characterized to determine optimal sensor locations. The coherence achieved between the CST measurements and the excitation force is compared with a reference Macro Fiber Composite (MFC) transducer. The CST shows promise for providing the reference signal required in feedforward algorithms for active noise and vibration control inside the car, since it shows good coherence with the force reference signal, but only for relatively large loads.

Published
2017

20. Smoothing effect of the thermal interface material on the temperature distribution in a stepwise varying width microchannel cooling device

Author

Gerard Laguna, Montse Vilarrubí, J.I. Rosell, Luc G. Fréchette, Jérôme Barrau, Sara Riera, Mohamed Omri, Departamento de Medio Ambiente y Ciencias del Suelo, Universitat de Lleida, Centre de Recherche en Nanofabrication et Nanocaractérisation (CRN2), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), and Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT)

Subjects
Fluid Flow and Transfer Processes, Materials science, Microchannel, 020209 energy, Thermal resistance, Thermal grease, 02 engineering and technology, Mechanics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Standard deviation, [SPI]Engineering Sciences [physics], Distribution (mathematics), 13. Climate action, 0202 electrical engineering, electronic engineering, information engineering, 0210 nano-technology, Layer (electronics), ComputingMilieux_MISCELLANEOUS, Smoothing
Abstract

The impact of the thermal interface material (TIM) layer on the performance of a stepwise varying width microchannel cooling device is analysed. A numerical model shows that the TIM layer, besides its well known negative impact on the temperature, also generates a smoothing effect on the temperature distribution. In this study, an analytical model is used to define a nondimensional parameter, called Smoothing Resistance ratio, as the quotient between the origin of the temperature non uniformities and the TIM thermal resistance that flatten the temperature distribution. The relationship between the temperature uniformity of the cooled device, expressed through the temperature standard deviation, and the Smoothing Resistance ratio is shown to be linear. These results lead to the definition of a new design procedure for this kind of cooling device, which aims to reduce the Smoothing Resistance ratio. Two solutions are identified and their drawbacks are analysed.

Published
2017

21. Area downsizing effects on electrical performance and robustness of triple junction solar cells for CPV applications

Author

Albert, Pierre, jaouad, abdelatif, Volatier, Maite, Valdivia, Christopher E., Deshayes, Yannick, Bechou, Laurent, Aimez., Vincent, Darnon, Maxime, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Université d'Ottawa [Ontario] (uOttawa), Laboratoire de l'intégration, du matériau au système (IMS), and Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

22. Scalable small signal modeling of AlGaN/GaN HEMT based on distributed gate resistance

Author

Hassan, Bilal, Cutivet, Adrien, Rodriguez, Christophe, Cozette, Flavien, Soltani, Ali, Boone, François, Maher, Hassan, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

23. Graphene-porous semiconductor nanocomposites scalable synthesis for energy applications

Author

Richard Arès, Arthur Dupuy, Mourad Jellite, Abderraouf Boucherif, Roxana Arvinte, Stéphanie Sauze, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
History, Fabrication, Materials science, chemistry.chemical_element, Germanium, Nanotechnology, 02 engineering and technology, 010402 general chemistry, Porous silicon, 01 natural sciences, Education, law.invention, [SPI]Engineering Sciences [physics], law, Porosity, ComputingMilieux_MISCELLANEOUS, Nanocomposite, Graphene, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Computer Science Applications, Semiconductor, chemistry, 0210 nano-technology, business, Microfabrication
Abstract

The aim of this work is to develop a cost effective and scalable fabrication process for graphene-enhanced porous semiconductor nanocomposite (GPNC). This class of materials combines the remarkable properties of graphene with the unique properties of porous semiconductors, such as porous silicon (PSi) and porous germanium (PGe). The experimental results show that these nanocomposites are chemically resistant to most of the commonly used microfabrication solutions and have enhanced electrical and thermal properties. Besides, we demonstrate the potential of graphene-porous germanium nanocomposite (GPGNC) for energy storage application.

Published
2019

24. Integrated optical microring resonators for absorption spectroscopy

Author

Girault, Pauline, Guillaume, Beaudin, Diez, Miguel, Joly, Simon, Laurent, Oyhenart, Canva, Michael, Charette, P., Bechou, Laurent, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire de l'intégration, du matériau au système (IMS), and Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1

Subjects
[SDV]Life Sciences [q-bio], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

25. Love wave biosensor to diagnose modification of cell viscoelasticy

Author

Paul G. Charette, Frederic Sarry, D. Beyssen, P. A. Segura Chavez, J. Bonhomme, L. Olive, Mourad Oudich, Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
Computer science, Acoustics, System of measurement, [SDV]Life Sciences [q-bio], Surface acoustic wave, Equations of motion, 02 engineering and technology, Viscous liquid, 021001 nanoscience & nanotechnology, Physics::Fluid Dynamics, Love wave, symbols.namesake, [SPI]Engineering Sciences [physics], 020303 mechanical engineering & transports, 0203 mechanical engineering, Sensor array, symbols, Sensitivity (control systems), Rayleigh wave, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

In this work we present the development of an integrated microfluidic platform addressing several challenges. The sensor array combines a dual Rayleigh wave and Love wave for the diagnosis of the modification of cell viscoelasticity. Based on simulations taking into equations of motion and Navier-Stokes equation for the viscous liquid region, we evaluate and correlate the Love surface acoustic wave sensing part in order to enhance the sensitivity. The results corroborate the idea that the whole measurement system must be considered to develop an integrated optimized analysis system.

Published
2019

26. Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-based Memristors at Cryogenic Temperature (1.5 K)

Author

Beilliard, Y., Paquette, F, Brousseau, F, Ecoffey, S., Alibart, F., Drouin, D., Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Nanostructures, nanoComponents & Molecules - IEMN (NCM-IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Nanostructures, nanoComponents & Molecules - IEMN (NCM - IEMN)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

27. Plasma processes for High Efficiency Multi-Junction Solar Cells Fabrication

Author

Darnon, M., Volatier, M., Albert, P., Lafontaine, M., St-Pierre, P., Hamon, G., Petit-Etienne, C., Gay, G., Erwine Pargon, Aimez, V., Fafard, S., Jaouad, A., Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

28. Optical spectroscopy combined with vacuum-free matrix assisted laser fragmentation and transfer for biosensing

Author

Khalid, Moumanis, Hassen, Walid M., Levesque, Simon, Frost, Eric, Dubowski, Jan J., Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
[SDV]Life Sciences [q-bio], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

29. Nano-particle mass sensing using phononic pillars

Author

Bonhomme Jeremy, Oudich Mourad, Paul G. Charette, Djafari-Rouhani Bahram, Bonello Bernard, Beyssen Denis, Sarry Frederic, Pennec Yann, Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, business.industry, 010401 analytical chemistry, Stacking, Pillar, chemistry.chemical_element, Perturbation (astronomy), Nanoparticle, 02 engineering and technology, Tungsten, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Metamaterial, [SPI]Engineering Sciences [physics], chemistry, Homogeneous, Q factor, Optoelectronics, Phononic Crystal, Mass sensing, 0210 nano-technology, business, Biosensor
Abstract

International audience; In this work, we investigate the sensitivity of a pillar based metasurface in order to understand the behavior of the system in real tests conditions where the mass perturbation will not be homogeneous on all the system. The structure we study is composed in stacking alternate layers of Silica and Tungsten and presents a torsional resonant mode which presents a high quality factor and a high mass sensitivity, in a case of a homogeneous perturbation. In a case of a non-homogeneous mass-perturbation over the pillars, each pillar gives a contribution to the signal perturbation under the form of a shifted peak. These results show that each pillar gives a contribution to the output signal and that the high quality factor of the structure allows to distinguishing the different perturbations.

Published
2019

30. Theoretical study of a phononic structure for bio-sensing applications

Author

Mourad Oudich, J. Bonhomme, D. Beyssen, P. A. Segura Chavez, L. Olive, Paul G. Charette, Frederic Sarry, Institut Jean Lamour (IJL), Université de Lorraine (UL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
010302 applied physics, Materials science, business.industry, Band gap, Aperture, [SDV]Life Sciences [q-bio], Stacking, Metamaterial, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI]Engineering Sciences [physics], Quality (physics), Surface wave, 0103 physical sciences, Optoelectronics, Cylinder, Sensitivity (control systems), 0210 nano-technology, business
Abstract

International audience; In this work, we investigate the evolution of the properties of a pillar phononic crystal in order to simplify the fabrication process by reducing the thickness of the layer. The structure is constructed by stacking alternate layers of SiO2 and Tungsten. The reduction of the dimensions moves the band gap to the upper frequencies and it is possible to adjust its aperture with the ratio comparing the radius of the cylinder with the layers' thickness. On a substrate, the pillars give resonant modes that can be excited by shear surface waves and gives a sharp peak in the transmission spectrum of the surface wave with a very high quality factor. We also study the theoretical mass sensitivity of the device and we propose a numerical method to determine the theoretical maximum sensitivity that could be obtain by the pillars system. This pillar based metasurface presents a very promising mass sensitivity and a possible way to increase the performance of SAW bio-sensors.

Published
2019

31. Thermoelectric properties of thin film of Graphene-Mesoporous Semiconductor Nanocomposites

Author

Sauze, Stéphanie, Stolz, Arnaud, Brault, Pascal, Semmar, Nadjib, Aziziyan, Mohammad Reza, Arès, Richard, Boucherif, Abderraouf, Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Université d'Orléans (UO)

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2019

32. Generalized Two-Temperature Fitting Algorithm for Ultrashort Laser Heating of Metal Film and Nanoparticles to spatially and temporally study heat propagation

Author

Bryche, Jean-François, Bresson, Paul, Moreau, Julien, Besbes, Mondher, Karsenti, P.L., Morris, Denis, Charette, Paul G., Canva, Michael, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Fabry / Biophotonique, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Département de chimie [Sherbrooke] (UdeS), Faculté des sciences [Sherbrooke] (UdeS), Université de Sherbrooke (UdeS)-Université de Sherbrooke (UdeS), LN2, UMI3463, Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[SDV] Life Sciences [q-bio], [SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], [SDV]Life Sciences [q-bio], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

33. Enabling III-V photovoltaics on silicon with nanoscale substrate engineering

Author

Boucherif, Abderraouf, Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), and Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

34. Synthesis of nanomaterials based on Graphene-Mesoporous Germanium

Author

Sauze, Stéphanie, Aziziyan, Mohammad Reza, Machon, Denis, Brault, Pascal, Kolhatkar, Gitanjali, Rudinger, Andreas, Korinek, Andreas, Arès, Richard, Boucherif, Abderraouf, Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Groupe de recherches sur l'énergétique des milieux ionisés (GREMI), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), and Institut National de la Recherche Scientifique [Québec] (INRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2019

35. Revisiting Pressure-Induced Transitions in Mesoporous Anatase TiO2

Author

Vittoria Pischedda, Denis Machon, Jérémie Margueritat, Laurence Bois, Quentin Martinet, Sylvie Le Floch, Alexis Forestier, Denis Morris, Lucien Saviot, Défi Jr.Jubgang Fandio, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), (nano)Matériaux pour l'énergie (ENERGIE), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Regroupement Québécois sur les Matériaux de Pointe (RQMP), École Polytechnique de Montréal (EPM)-Université de Sherbrooke (UdeS)-McGill University = Université McGill [Montréal, Canada]-Université de Montréal (UdeM)-Fonds Québécois de Recherche sur la Nature et les Technologies (FQRNT), Spectroscopies optiques des matériaux verres, amorphes et à nanoparticules (SOPRANO), Luminescence (LUMINESCENCE), Laboratoire Interdisciplinaire Carnot de Bourgogne (LICB), Université de Bourgogne (UB)-Centre National de la Recherche Scientifique (CNRS), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)

Subjects
Phase transition, Anatase, Materials science, Nanoparticle, Oxides, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], General Energy, Chemical engineering, Chemical structure, Phase transitions, Phase (matter), Nanoparticles, Physical and Theoretical Chemistry, Mesoporous material, Porosity
Abstract

International audience; Mesoporous materials may be considered as the negative image of a collection of nanoparticles. In both cases, the large surface area induces an increase of the system energy. Pressure-induced phase transitions are used to study the differences between mesoporous TiO 2 and a collection of TiO 2 nanoparticles. The synthesis and characterization of mesoporous TiO 2 with a nanosponge-like structure are presented and the inputs of different spectroscopic techniques (Terahertz, Brillouin and Raman) are highlighted. The results show that the phase stability of mesoporous TiO 2 under pressure is very similar to that observed in nanoparticles. 2

Published
2019

36. An application of OpenLoop Active Gate Voltage Control for GaN Transistors

Author

Beye, M. L., Mogniotte, J. F., Phung, L. V., Idir, N., Maher, H., Allard, Béatrice, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

37. Patterning Platinum using CMP and plasma etching industrially compatible processes

Author

Elshaer, A, Stricher, R, DARNON, M., Drouin, D., Ecoffey, S., Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), and LN2, UMI3463

Subjects
[SPI]Engineering Sciences [physics], [SPI] Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

38. CMP developments in MEMS foundry: Application to direct wafer bonding process

Author

Gond-Charton, P, Landry, S., Stricher, R, Poirier J, S, Ecoffey, S., Drouin, D., Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

39. Pt and Au planarization for the fabrication of microand nano- structures

Author

Stricher, R, Elshaer, A, Drouin, D., Ecoffey, S., Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

40. In-depth study of annealed porous silicon: Understand the morphological properties effect on negative LiB electrode performance

Author

Aude Roland, Arthur Dupuy, Frédérique Cunin, Laure Monconduit, Denis Machon, Abderaouf Boucherif, Nicolas Louvain, Bernard Fraisse, Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut Lumière Matière [Villeurbanne] (ILM), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon, Réseau sur le stockage électrochimique de l'énergie (RS2E), Université de Picardie Jules Verne (UPJV)-Institut de Chimie du CNRS (INC)-Aix Marseille Université (AMU)-Université de Pau et des Pays de l'Adour (UPPA)-Université de Nantes (UN)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Collège de France (CdF (institution))-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM), Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Université de Nantes (UN)-Aix Marseille Université (AMU)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Collège de France (CdF (institution))-Université de Picardie Jules Verne (UPJV)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université de Pau et des Pays de l'Adour (UPPA)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke [Sherbrooke]-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke [Sherbrooke], and Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Silicon, Annealing (metallurgy), General Chemical Engineering, technology, industry, and agriculture, chemistry.chemical_element, 02 engineering and technology, Electrolyte, 010402 general chemistry, 021001 nanoscience & nanotechnology, Porous silicon, Electrochemistry, equipment and supplies, 01 natural sciences, 0104 chemical sciences, [SPI]Engineering Sciences [physics], chemistry, Electrode, Wetting, Composite material, 0210 nano-technology, Porosity
Abstract

International audience; Silicon (Si) used as negative electrode in a Li-ion battery (LIB) is highly attractive for its high energy density, safe cycling, and nontoxicity. However its alloying mechanism with Li induces material pulverization, which leads to a rapid capacity fade. In this work, annealing post treatment was used in order to tune the morphological properties of porous silicon. Playing on annealing temperature, the morphological modification induces electrochemical behavior changes in LIB. The porosification is an interesting way to accommodate the volume expansion occurring during the alloying process. Increase of the annealing temperature leads to porous Si pores and walls reorganization, which has a positive impact on battery performance likely due to a higher wettability of the Si electrode with electrolyte. 700 °C appeared to be the optimized annealing temperature.

Published
2019

41. Experimental characterization of a self-adaptive shape memory alloy cooling approach to regulate temperature under varying heat loads

Author

Jérôme Barrau, G. Morell, Luc G. Fréchette, Montse Vilarrubí, J.I. Rosell, Applied Physics Section of the Environmental Science Department, Universitat de Lleida, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
Fluid Flow and Transfer Processes, Convection, Work (thermodynamics), Materials science, Computer cooling, Mechanical Engineering, Thermal resistance, Flow (psychology), 02 engineering and technology, Shape-memory alloy, Mechanics, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, 010305 fluids & plasmas, Fin (extended surface), [SPI]Engineering Sciences [physics], Heat flux, 0103 physical sciences, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

Electronic cooling devices typically aim to provide low thermal resistance, however, for many applications, temperature non-uniformity across the cooled object is also a key parameter, as it impacts reliability. Tailored microchannels or fin layouts are examples of cooling devices that can be designed to reach uniform wall temperatures but require known and constant heat load distributions. In this work, a self-adaptive liquid cooling device is proposed to provide constant and uniform temperature distributions under spatially and time dependent heat load scenarios. The working principle is based on the use of the Two-Way Shape Memory Effect (TWSME) of trained shape memory alloy (SMA) wings that elevate into the flow to reduce the convective thermal resistance when a critical temperature is reached. The conditions for proper operation are first defined analytically. Then, the impact of SMA wings on thermal resistance is experimentally investigated. Finally, the ability of the self-adaptive concept to maintain a constant wall temperature when the heat flux increases, is demonstrated. In the studied case, for fixed inlet coolant temperature and flow rate, the liquid cooling device was able to maintain the temperature of the cooled object within an interval of 7 °C for a heat flux varying from 32.8 to 67 W/cm2. Without self-adaptation, a temperature variation over 85 °C was expected for the same cooling device, corresponding to an order of magnitude improvement.

Published
2019

42. Source Separation Using Sensor’s Frequency Response: Theory and Practice on Carbon Nanotubes Sensors

Author

Hélène Fremont, Aurore Quelennec, Dominique Drouin, Eric Duchesne, Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), and IBM Canada

Subjects
Frequency response, Materials science, sensing mechanism, Phase (waves), temperature sensor, 02 engineering and technology, Carbon nanotube, Hardware_PERFORMANCEANDRELIABILITY, lcsh:Chemical technology, Biochemistry, Article, Analytical Chemistry, law.invention, gas sensor, 03 medical and health sciences, [SPI]Engineering Sciences [physics], Moisture sensor, law, Source separation, Hardware_INTEGRATEDCIRCUITS, Computer Science::Networking and Internet Architecture, ComputerSystemsOrganization_SPECIAL-PURPOSEANDAPPLICATION-BASEDSYSTEMS, lcsh:TP1-1185, Electronics, Electrical and Electronic Engineering, Instrumentation, Electrical impedance, ComputingMilieux_MISCELLANEOUS, 030304 developmental biology, 0303 health sciences, business.industry, dual sensor, MWCNT, moisture sensor, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Dual sensor, source separation, Optoelectronics, 0210 nano-technology, business
Abstract

Nowadays, there is an increased demand in integrated sensors for electronic devices. Multi-functional sensors provide the same amount of data using fewer sensors. Carbon nanotubes are non-selectively sensitive to temperature, gas and strain. Thus, carbon nanotubes are perfect candidates to design multi-functional sensors. In our study, we are interested in a dual humidity-temperature sensor. Here, we present a novel method to differentiate at least two sources using the sensor&rsquo, s frequency responses based on multiwall carbon nanotubes sensors. The experimental results demonstrate that there are temperature- or moisture-invariant frequencies of the impedance magnitude, and their values depend on the sensor&rsquo, s geometry. The proposed measurement model shows that source-invariant frequencies of the phase can be also determined. In addition, the source separation method is generalized to other materials or sources enabling multi-functional sensors for environment monitoring.

Published
2019

43. Duplicated design to further improve III-V solar cell efficiency at ultra-high concentration factors (> 1000 suns)

Author

El-Gahouchi, Mohamed, Aziziyan, Mohammad, Arvinte, R, Fafard, Simon, Ares, Richard, Boucherif, Abderraouf, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

44. Generalized Two-Temperature Fitting Algorithm for Ultrashort Laser Heating of Metal Film

Author

Bresson, P., Bryche, Jean-François, Moreau, Julien, Besbes, Mondher, Karsenti, Paul-Ludovic, Morris, Denis, Charette, Paul G., Canva, Michael, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Charles Fabry / Biophotonique, Laboratoire Charles Fabry (LCF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Département de chimie [Sherbrooke] (UdeS), Faculté des sciences [Sherbrooke] (UdeS), Université de Sherbrooke (UdeS)-Université de Sherbrooke (UdeS), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[SPI]Engineering Sciences [physics], [SDV]Life Sciences [q-bio], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

45. Using flexible ferrite sheet to design PCB inductor for 1MHz GaN converter taking into account thermal issues

Author

Ammar Chafi, Nadir Idir, Arnaud Videt, Hassan Maher, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d’Électrotechnique et d’Électronique de Puissance - ULR 2697 (L2EP), Centrale Lille-Université de Lille-Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Centrale Lille-Haute Etude d'Ingénieurs-Université de Lille-Arts et Métiers Sciences et Technologies, and HESAM Université (HESAM)-HESAM Université (HESAM)

Subjects
Materials science, business.industry, 020209 energy, 020208 electrical & electronic engineering, Transistor, Electrical engineering, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Converters, Inductor, 7. Clean energy, Energy storage, law.invention, Inductance, [SPI]Engineering Sciences [physics], law, Hardware_GENERAL, Thermal, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Ferrite (magnet), business, Saturation (magnetic), ComputingMilieux_MISCELLANEOUS
Abstract

International audience; Inductors are required in switching power converters for energy storage. They take a large volume compared with the other components of converters because of their small energy density. Nowadays, the operating frequency of power converters increases to MHz range because of the fast switching time of the new power GaN transistors. This allows to reduce the volume of the required inductors. In this paper, a design method for PCB inductor for GaN converter is proposed. The design approach is based on the optimization of the inductor volume taking into account the thermal issues of the ferrite sheets used to enhance the inductance value. The required inductance value for the GaN converter is chosen from a Losses-Volume curve. Also, an experimental method based on S-parameters is used to characterize the inductor saturation.

Published
2019

46. Analysis and Assessment of temperature effect of an Open LoopActive Gate Voltage Control in GaN Transistor During Turn-ON and Turn-OFF

Author

Mamadou Lamine Beye, Jean-Fraçois Mogniotte, Luong-Viet Phung, Nadir Idir, Hassan Maher, bruno francois, Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire d’Électrotechnique et d’Électronique de Puissance - ULR 2697 (L2EP), Centrale Lille-Université de Lille-Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Centrale Lille-Haute Etude d'Ingénieurs-Université de Lille-Arts et Métiers Sciences et Technologies, and HESAM Université (HESAM)-HESAM Université (HESAM)

Subjects
[SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

47. Origin of dynamical instabilities in some simulated two-dimensional materials: GaSe as a case study

Author

S. Radescu, Denis Machon, Patrice Mélinon, Universidad de La Laguna [Tenerife - SP] (ULL), (nano)Matériaux pour l'énergie (ENERGIE), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), and Université de Sherbrooke (UdeS)

Subjects
Work (thermodynamics), Materials science, Physics and Astronomy (miscellaneous), Phonon, Dynamical instability, 2-dimensional systems, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Instability, Stability (probability), Physical property, Brillouin zone, Lift (force), 0103 physical sciences, Density functional theory, General Materials Science, Statistical physics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology
Abstract

International audience; Following the emergence of two-dimensional (2D) materials, a large amount of work has been dedicated to this class of materials. Numerical simulations have proven to be powerful to analyze and predict structure-properties relationships. However, a recurrent issue that arises in some 2D compounds is the appearance of a dynamical instability as an unstable phonon branch in a small pocket close to the Brillouin zone center. The origin (numerical and/or physical) of this instability is hardly discussed. Here, using a rising 2D material, GaSe, as a case study, this issue is tackled by discussing the numerical techniques that may be used to lift the instability but also by understanding the fundamental origin of it. The interlayer distance is the crucial parameter and the ionicity of the compounds is the key physical property governing the propensity for instability. In many works, this distance is arbitrarily fixed to a value for which the absence of interactions between the periodic images of the layers is assumed. A careful control of the effect of this distance on the stability is required prior to subsequent calculations of physical properties.

Published
2019

48. Passivating Antireflection Coating for Improving Optical Properties of Concentrated Photovoltaics Using PECVD

Author

St-Pierre, Philippe, Richard, Olivier, Hamon, Gwenaelle, Darnon, Maxime, Volatier, Maite, Fafard, Simon, jaouad, abdelatif, Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

49. Nanostructured Surfaces in Concentrator Photovoltaic Systems To Improve Temperature-Dependent Energy Output

Author

Forcade, Gavin P, Valdivia, Christopher, St-Pierre, Philippe, Darnon, Maxime, Hinzer, Karin, Université d'Ottawa [Ontario] (uOttawa), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

50. Improving Temperature-Dependent Energy Output of Concentrator Photovoltaic Systems using Nanotextured Surfaces

Author

Forcade, Gavin P, Valdivia, Christopher, St-Pierre, Philippe, Darnon, Maxime, Hinzer, Karin, Université d'Ottawa [Ontario] (uOttawa), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies Nanosystèmes (LN2 ), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Sherbrooke (UdeS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

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