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11 results on '"Umishio, Hiroshi"'

3. Evaluation of a Novel Boron-Containing α-d-Mannopyranoside for BNCT

Author

Tsurubuchi, Takao, primary, Shirakawa, Makoto, additional, Kurosawa, Wataru, additional, Matsumoto, Kayo, additional, Ubagai, Risa, additional, Umishio, Hiroshi, additional, Suga, Yasuyo, additional, Yamazaki, Junko, additional, Arakawa, Akihiro, additional, Maruyama, Yutaka, additional, Seki, Takuya, additional, Shibui, Yusuke, additional, Yoshida, Fumiyo, additional, Zaboronok, Alexander, additional, Suzuki, Minoru, additional, Sakurai, Yoshinori, additional, Tanaka, Hiroki, additional, Nakai, Kei, additional, Ishikawa, Eiichi, additional, and Matsumura, Akira, additional

Published
2020
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6. Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance.

Author

Umishio, Hiroshi, Sai, Hitoshi, Koida, Takashi, and Matsui, Takuya

Subjects
SILICON solar cells, SOLAR cells, PLASMA-enhanced chemical vapor deposition, HYDROGENATED amorphous silicon, ELECTRICAL conductivity measurement, CELLULAR evolution
Abstract

Hydrogenated amorphous silicon (a‐Si:H) is a key enabler in high‐efficiency crystalline silicon solar cells known as the silicon heterojunction technology. Although efforts have been devoted to replacing doped a‐Si:H contact layer by hydrogenated nanocrystalline silicon (nc‐Si:H) to take advantage of its superior optoelectrical properties, it is still unclear whether the nc‐Si:H outperforms the a‐Si:H at the high efficiency level. Here, we show that boron‐doped (p)nc‐Si:H prepared by plasma‐enhanced chemical vapor deposition (PECVD) acts as an efficient hole contact layer, providing not only a mitigation of the parasitic absorption loss but also improvements in passivation and electrical contact properties. This results in an efficiency increase by 0.3%–0.6% absolute compared to the reference cell with the (p)a‐Si:H, and a best cell efficiency of 23.54%. We find that the critical thickness of the (p)nc‐Si:H layers required for gaining high efficiency (tc ~ 15–30 nm) is a factor of 3–6 greater than that of the (p)a‐Si:H. UV Raman spectroscopy and electrical conductivity measurements reveal that the tc of the (p)nc‐Si:H is associated with the layer growth needing for the surface coalescence of nanocrystals, determining the hole selectivity and the contact resistivity at the electrode/(p)nc‐Si:H interface. Our results suggest that such nanostructure evolution can be hastened by using a very‐high‐frequency PECVD process. [ABSTRACT FROM AUTHOR]

Published
2021
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10. Light ion production in 175 MeV quasi mono-energetic neutron induced reactions on carbon, oxygen, and silicon

Author

Watanabe, Yukinobu, primary, Hirayama, Shusuke, additional, Umishio, Hiroshi, additional, Naitou, Yuuki, additional, Hayashi, Masateru, additional, Bevilacqua, Riccardo, additional, Simutkin, Vasily, additional, Pomp, Stephan, additional, Gustavsson, Cecilia, additional, Österlund, Michael, additional, Hjalmarsson, Anders, additional, Prokofiev, Alexander, additional, and Tippawan, Udomrat, additional

Published
2014
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11. Measurement of Neutron Yields from Thick Al and SUS304Targets Bombarded by 5-MeV and 9-MeV Deuterons

Author

HIRABAYASHI, Keiichi, primary, NISHIZAWA, Tomoya, additional, UEHARA, Haruhiko, additional, HIRANO, Hidetaka, additional, KAJIMOTO, Tsuyoshi, additional, SHIGYO, Nobuhiro, additional, MAEDA, Makoto, additional, YASUMUNE, Takashi, additional, MAEHATA, Keisuke, additional, TAJIRI, Yuta, additional, UMISHIO, Hiroshi, additional, ABE, Shin-ichirou, additional, WATANABE, Yukinobu, additional, SAGARA, Kenshi, additional, MAEBARA, Sunao, additional, TAKAHASHI, Hiroki, additional, and SAKAKI, Hironao, additional

Published
2012
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