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42 results on '"Ullan, Miguel"'

1. Understanding the Humidity Sensitivity of Sensors with TCAD Simulations

Author

Ninca, Ilona-Stefana, Bloch, Ingo, Bruers, Ben, Fadeyev, Vitaliy, Fernandez-Tejero, Xavi, Jessiman, Callan, Keller, John Stakely, Klein, Christoph Thomas, Koffas, Thomas, Lacker, Heiko Markus, Li, Peilin, Scharf, Christian, Staats, Ezekiel, Ullan, Miguel, and Unno, Yoshinobu

Subjects
Physics - Instrumentation and Detectors
Abstract

The breakdown voltage of silicon sensors without special surface is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p test structures for different effective relative humidity. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field, carrier densities and avalanche breakdown in the periphery of p-bulk silicon sensors is presented.

Published
2024

4. The ABC130 barrel module prototyping programme for the ATLAS strip tracker

Author

Poley, Luise, Sawyer, Craig, Addepalli, Sagar, Affolder, Anthony, Allongue, Bruno, Allport, Phil, Anderssen, Eric, Anghinolfi, Francis, Arguin, Jean-François, Arling, Jan-Hendrik, Arnaez, Olivier, Asbah, Nedaa Alexandra, Ashby, Joe, Asimakopoulou, Eleni Myrto, Atlay, Naim Bora, Bartsch, Ludwig, Basso, Matthew J., Beacham, James, Beaupré, Scott L., Beck, Graham, Beichert, Carl, Bergsten, Laura, Bernabeu, Jose, Bhattarai, Prajita, Bloch, Ingo, Blue, Andrew, Bochenek, Michal, Botte, James, Boynton, Liam, Brenner, Richard, Brueers, Ben, Buchanan, Emma, Bullard, Brendon, Capocasa, Francesca, Carr, Isabel, Carra, Sonia, Chao, Chen Wen, Chen, Jiayi, Chen, Liejian, Chen, Yebo, Chen, Xin, Cindro, Vladimir, Ciocio, Alessandra, Civera, Jose V., Cormier, Kyle, Cornell, Ella, Crick, Ben, Dabrowski, Wladyslaw, Dam, Mogens, David, Claire, Demontigny, Gabriel, Dette, Karola, DeWitt, Joel, Diez, Sergio, Doherty, Fred, Dopke, Jens, Dressnandt, Nandor, Edwards, Sam, Fadeyev, Vitaliy, Farrington, Sinead, Fawcett, William, Fernandez-Tejero, Javier, Filmer, Emily, Fleta, Celeste, Gallop, Bruce, Galloway, Zachary, Argos, Carlos Garcia, Garg, Diksha, Gignac, Matthew, Gillberg, Dag, Giovinazzo, Dena, Glover, James, Goettlicher, Peter, Gonella, Laura, Gorišek, Andrej, Grant, Charles, Grant, Fiona, Gray, Calum, Greenall, Ashley, Gregor, Ingrid-Maria, Greig, Graham, Grillo, Alexander A., Gu, Shan, Guescini, Francesco, da Costa, Joao Barreiro Guimaraes, Gunnell, Jane, Gupta, Ruchi, Haber, Carl, Halgeri, Amogh, Hamersly, Derek, Haugen, Tom-Erik, Hauser, Marc, Heim, Sarah, Heim, Timon, Helling, Cole, Herde, Hannah, Hessey, Nigel P., Hommels, Bart, Hönig, Jan Cedric, Hunter, Amelia, Jackson, Paul, Jewkes, Keith, John, Jaya John, Johnson, Thomas Allan, Jones, Tim, Kachiguin, Serguei, Kang, Nathan, Kaplon, Jan, Kareem, Mohammad, Keener, Paul, Keller, John, Key-Charriere, Michelle, Kilani, Samer, Kisliuk, Dylan, Klein, Christoph Thomas, Koffas, Thomas, Kramberger, Gregor, Krizka, Karol, Kroll, Jiri, Kuehn, Susanne, Kurth, Matthew, Labitan, Charilou, Lacasta, Carlos, Lacker, Heiko, Leitao, Pedro Vicente, León, Pablo, Li, Boyang, Li, Chenyang, Li, Yiming, Li, Zhiying, Liang, Zhijun, Liberatore, Marianna, Lister, Alison, Liu, Kai, Liu, Peilian, Lohse, Thomas, Lönker, Jonas, Lou, Xinchou, Lu, Weiguo, Luce, Zachary, Lynn, David, MacFadyen, Ross, Mägdefessel, Sven, Mahboubi, Kambiz, Malik, Usha, Mandić, Igor, La Marra, Daniel, Martin, Jean-Pierre, Martinez-Mckinney, Forest, Mikestikova, Marcela, Mikuž, Marko, Mitra, Ankush, Mladina, Evan, Montalbano, Alyssa, Monzat, David, Morii, Masahiro, Mullier, Geoffrey, Neundorf, Jonas, Newcomer, Mitch, Ng, Yanwing, Nikolica, Adrian, Nikolopoulos, Konstantinos, Oechsle, Jan, Oliver, Jason, Orr, Robert S., Ottino, Gregory, Paillard, Christian, Pani, Priscilla, Paowell, Sam, Parzefall, Ulrich, Phillips, Peter W., Platero, Adrián, Platero, Vicente, Prahl, Volker, Pyatt, Simon, Ran, Kunlin, Reardon, Nikita, Rehnisch, Laura, Renardi, Alessia, Renzmann, Martin, Rifki, Othmane, Rodriguez, Arturo Rodriguez, Rosin, Guy, Rossi, Edoardo, Ruggeri, Tristan, Rühr, Frederik, Rymaszewski, Piotr, Sadrozinski, Hartmut F. -W., Sanethavong, Phathakone, Santpur, Sai Neha, Scharf, Christian, Schillaci, Zach, Schmitt, Stefan, Sharma, Abhishek, Sciolla, Gabriella, Seiden, Abraham, Shi, Xin, Simpson-Allsop, Cameron, Snoek, Hella, Snow, Steve, Solaz, Carles, Soldevila, Urmila, Sousa, Filipe, Sperlich, Dennis, Staats, Ezekiel, Stack, Tynan Louis, Stanitzki, Marcel, Starinsky, Nikolai, Steentoft, Jonas, Stegler, Martin, Stelzer, Bernd, Stucci, Stefania, Swientek, Krzysztof, Taylor, Geoffrey N., Taylor, Wendy, Teoh, Jia Jian, Teuscher, Richard, Thomas, Jürgen, Tigchelaar, Allen, Tran, Tony, Tricoli, Alessandro, Trischuk, Dominique Anderson, Unno, Yoshinobu, van Nieuwenhuizen, Gerrit, Ullán, Miguel, Vermeulen, Jos, Vickey, Trevor, Vidal, Guillem, Vreeswijk, Marcel, Warren, Matt, Weidberg, Tony, Wiehe, Moritz, Wiglesworth, Craig, Wiik-Fuchs, Liv, Williams, Scott, Wilson, John, Witharm, Rhonda, Wizemann, Felix, Wonsak, Sven, Worm, Steve, Wormald, Mike, Xella, Stefania, Yang, Yuzhen, Yarwick, Joseph, Yu, Tang-Fai, Zhang, Dengfeng, Zhang, Kaili, Zhou, Maosen, and Zhu, Hongbo

Subjects
Physics - Instrumentation and Detectors, High Energy Physics - Experiment
Abstract

For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests., Comment: 82 pages, 66 figures

Published
2020
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5. Mapping the depleted area of silicon diodes using a micro-focused X-ray beam

Author

Poley, Luise, Blue, Andrew, Bloch, Ingo, Buttar, Craig, Fadeyev, Vitaliy, Fernandez-Tejero, Javier, Fleta, Celeste, Hacker, Johannes, Llacer, Carlos Lacasta, Miñano, Mercedes, Renzmann, Martin, Rossi, Edoardo, Sawyer, Craig, Sperlich, Dennis, Stegler, Martin, Ullán, Miguel, and Unno, Yoshinobu

Subjects
Physics - Instrumentation and Detectors, High Energy Physics - Experiment
Abstract

For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k{\Omega} cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge.

Published
2018
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7. Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

Author

Flaschel, Nils, Ariza, Dario, Diez, Sergio, Gerboles, Marta, Gregor, Ingrid-Maria, Jorda, Xavier, Mas, Roser, Quirion, David, Tackmann, Kerstin, and Ullan, Miguel

Subjects
Physics - Instrumentation and Detectors, High Energy Physics - Experiment
Abstract

Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today`s prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods., Comment: 10 pages, submitted to NIMA (accepted)

Published
2016
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8. Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Author

Poley, Luise, Blue, Andrew, Bates, Richard, Bloch, Ingo, Diez, Sergio, Fernandez-Tejero, Javier, Fleta, Celeste, Gallop, Bruce, Greenall, Ashley, Gregor, Ingrid-Maria, Hara, Kazuhiko, Ikegami, Yoichi, Lacasta, Carlos, Lohwasser, Kristin, Maneuski, Dzmitry, Nagorski, Sebastian, Pape, Ian, Phillips, Peter W., Sperlich, Dennis, Sawhney, Kawal, Soldevila, Urmila, Ullan, Miguel, Unno, Yoshinobu, and Warren, Matt

Subjects
Physics - Instrumentation and Detectors, High Energy Physics - Experiment
Abstract

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 um FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 Um thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 Um thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 um strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch., Comment: 12 pages, to be published to Journal of Instrumentation

Published
2016
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9. Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker

Author

Fernandez-Martinez, Pablo, Ullan, Miguel, Flores, David, Hidalgo, Salvador, Quirion, David, and Lynn, David

Subjects
Physics - Instrumentation and Detectors
Abstract

This work presents a new silicon vertical JFET (V-JFET) device, based on the trenched 3D-detector technology developed at IMB-CNM, to be used as switches for the High-Voltage powering scheme of the ATLAS upgrade Inner Tracker. The optimization of the device characteristics is performed by 2D and 3D TCAD simulations. Special attention has been paid to the on-resistance and the switch-off and breakdown voltages to meet the specific requirements of the system. In addition, a set of parameter values has been extracted from the simulated curves to implement a SPICE model of the proposed V-JFET transistor. As these devices are expected to operate under very high radiation conditions during the whole experiment life-time, a study of the radiation damage effects and the expected degradation on the device performance is also presented at the end of the paper., Comment: KEYWORDS: Radiation-hard electronics; Voltage distributions; Large detector systems for particle and astroparticle physics. 9 Pages, 7 Figures

Published
2015
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11. Monitoring Quality of ATLAS ITk Strip Sensors Through Database

Author

Fadeyev, Vitaliy, primary, Beránek, Marek, additional, Bach, Eric, additional, Basso, Matthew, additional, Blue, Andrew James, additional, Federicova, Pavla, additional, Fernandez-Tejero, Javier, additional, Fournier, Andrew, additional, Greig, Graham, additional, Hamersly, Derek, additional, Hara, Kazuhiko, additional, Hill, Ewan, additional, Hirose, Shigeki, additional, Hommels, Bart, additional, Jones, Dominic, additional, Klein, Christoph Thomas, additional, Koffas, Thomas, additional, Latonova, Vera, additional, Mikestikova, Marcela, additional, Nakamura, Koji, additional, Poley, Luise, additional, Orr, Robert, additional, Rousso, David, additional, Stelzer, Bernd, additional, Sykora, Martin, additional, Ullan, Miguel, additional, and Unno, Yoshinobu, additional

Published
2023
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12. Analysis of humidity sensitivity of silicon strip sensors for ATLAS upgrade tracker, pre- and post-irradiation

Author

Consejo Superior de Investigaciones Científicas (España), Fernández-Tejero, Javier, et al., Fleta, Celeste, Ullan, Miguel, Consejo Superior de Investigaciones Científicas (España), Fernández-Tejero, Javier, et al., Fleta, Celeste, and Ullan, Miguel

Abstract

During the prototyping phase of the new ATLAS Inner-Tracker (ITk) strip sensors, a degradation of the device breakdown voltage at high humidity was observed. Although the degradation was temporary, showing a fast recovery in dry conditions, the study of the influence of humidity on the sensor performance was critical to establish counter-measures and handling protocols during production testing in order to ensure the proper performance of the upgraded detector. The work presented here has the objective to study for the first time the breakdown voltage deterioration in presence of ambient humidity of ATLAS ITk production-layout strip sensors with different surface properties, before and after proton, neutron and gamma irradiations. A study of the humidity sensitivity of miniature ATLAS ITk strip sensors, before and after proton irradiations, is also presented to compare the sensitivity of devices with different sizes. The sensors were also exposed for several days to high humidity with the aim to recreate and evaluate the influence of the detector integration environment expected during the Large Hadron Collider (LHC) Long Shutdown 3 (LS3) in 2026, where the sensors will be exposed to ambient humidity for prolonged times.

Published
2023

13. Specifications and Pre-Production of n+-in-p Large-format Strip Sensors fabricated in 6-inch Silicon Wafers, ATLAS18, for Inner Tracker of ATLAS Detector for High-Luminosity Large Hadron Collider

Author

Abidi, Haider, Affolder, Tony, Affolder, Kirsten, Allport, Philip Patrick, Beaupre, Scott Lee, Beck, Graham, Bernabeu Verdu, Jose, Bevan, Adrian, Chisholm, Andrew Stephen, Ciungu, Bianca Monica, Dawson, Ian, Dowling, Andrew Jay, Fadeyev, Vitaliy, Federicova, Pavla, Fernandez-Tejero, Xavi, Fleta Corral, Celeste, Fournier, Andrew Curtis, Gignac, Matthew, Gonella, Laura, Greig, Graham George, Gunnell, Jane Frances, Hara, Kazuhiko, Hirose, Shigeki, Hommels, Bart, Ishii, Tatsuya, Jessiman, Callan, Johnson, Jacob Wayne, Jones, Dominic, Kachiguine, Serguei, Kang, Nathan Jihoon, Keller, John Stakely, Klein, Christoph Thomas, Koffas, Thomas, Kopsalis, Ioannis, Kroll, Jiri, Kvasnicka, Jiri, Lacasta Llacer, Carlos, Latonova, Vera, Lomas, Joshua David, Mikestikova, Marcela, Miyagawa, Paul, Orr, Robert, Poley, Anne-Luise, Rousso, David, Shah, Aashaq, Solaz Contell, Carles, Soldevila Serrano, Urmila, Staats, Ezekiel, Stack, Tynan Louis, Stelzer, Bernd, Ullan, Miguel, Unno, Yoshinobu, and Zenz, Seth

Subjects
Particle Physics - Experiment
Abstract

The full volume of the inner tracker of the ATLAS experiment will be replaced with new all-Silicon detectors for HL-LHC. The strip detectors, in the radial extent of 40 to 100 cm, are made of four layers of cylindrical-structures in the barrel and six layers of disk-structures in the endcap section with 2 layers of strip sensors for stereo-viewing in each layer-structure. The corresponding area of strip sensors, at 165 m^2, will be covered with 10976 barrel and 6912 endcap sensors. A new approach is adopted to use p-type material to be more radiation-tolerant, making the readout in n-strips, so-called n+-in-p sensors, to cope with the fluence of 9.7×10^14 (1.6×10^15) 1-MeV neutron-equivalent (neq)/cm^2 and ionizing dose of 44 (66) Mrad at the maximum in the barrel (endcap in the parenthesis) section, for its lifetime including a safety factor of 1.5. The readout is AC-coupled and the strips are biased via Polysilicon resistors for all sensors. In the barrel sensors, the geometry is square, 9.8×9.8 cm^2, to have the largest area of sensor possible from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 µm and 4 or 2 rows of strip segments in two types of sensors, "short strips (SS)" for the inner 2 layers and "long strips (LS)" for the outer 2, respectively. In the endcap, we have designed roughly trapezoidal sensors with built-in stereo angle, curved edges along the circumference, and in 6 unique shapes in each radial extent, R0 to R5. The strips are in fan geometry, with a mean pitch of approximately 75 µm and 4 or 2 rows of strip segments. The sensors of this specification are labelled as "ATLAS18xx" where xx stands for SS, LS, Rx (x=0 to 5). With the specifications of mechanical features and electrical performance, CAD files for processing were laid out by following successful designs of ATLAS07, ATLAS12 and ATLAS17LS of the barrel sensors, and ATLAS12EC/R0 of the R0 endcap sensors, together with a number of optimizations. "Pre-Production" amount of 1041 wafers were fabricated and delivered with the tests carried out by vendor. The quality of the sensors was reviewed through the data as provided by the vendor. These sensors were used for establishing and exercising acceptance procedures, and subsequently to be used for pre-production of strip modules and layer structures.

Published
2023

14. ATLAS ITk strip sensor quality assurance tests and results of ATLAS18 pre-production sensors

Author

Hirose, Shigeki, Allport, Philip Patrick, Bach Marques, Eric, Basso, Matthew Joseph, Bhardwaj, Avani, Chisholm, Andrew Stephen, Cindro, Vladimir, Ciungu, Bianca Monica, Crick, Benjamin Matthew, Fernandez-Tejero, Xavi, Fleta Corral, Celeste, George, William Frederick, Gonella, Laura, Hara, Kazuhiko, Hunter, Amelia, Ishii, Tatsuya, Knight, Timothy Michael, Kopsalis, Ioannis, Kroll, Jiri, Kvasnicka, Jiri, Latonova, Vera, Lomas, Joshua David, Mandic, Igor, Mikestikova, Marcela, Nakamura, Koji, Orr, Robert, Saito, Kota, Ullan, Miguel, and Unno, Yoshinobu

Subjects
Particle Physics - Experiment
Abstract

Towards the high luminosity (HL) operation of the Large Hadron Collider (LHC), the inner tracking system of the ATLAS detector is replaced by a fully silicon-based inner tracker (ITk). Its outer region consists of 17,888 $n^+$-in-$p$ silicon strip sensors. In order to confirm key properties of the production sensors as well as to establish a solid workflow of quality inspection and monitoring of the various sensor properties, about 5\% of the total strip sensors were produced in 2020 as a pre-production run. As a quality assurance (QA) program, irradiation of dedicated QA test pieces was periodically performed. The fluences of proton, neutron and $\gamma$-ray irradiations were up to $1.6 \times 10^{15}$ 1-MeV neutrons$/\mathrm{cm}^2$ and 0.66 MGy, which are equivalent to the maximum expected radiation fluences at the HL-LHC operation with a safety factor of 1.5. Results from 154 QA test pieces demonstrated high quality of the strip sensors through the pre-production. Detailed understanding of post-irradiated strip sensors was acquired, and the procedures of irradiation and post-irradiation QA testing were fully established. Consequently, the 3.8-year project of the strip sensor production for the ATLAS ITk detector was initiated in July 2021.

Published
2023

15. Experimental Study and Empirical Modelling of Long Term Annealing of the ATLAS18 Sensors

Author

Orr, Robert, Affolder, Tony, Bhardwaj, Avani, Chisholm, Andrew Stephen, Cindro, Vladimir, Crick, Benjamin Matthew, Fadeyev, Vitaliy, Gonella, Laura, Kopsalis, Ioannis, Lacasta Llacer, Carlos, Lomas, Joshua David, Mandic, Igor, Solaz Contell, Carles, Soldevila Serrano, Urmila, Ullan, Miguel, Unno, Yoshinobu, Bernabeu Verdu, Jose, Kanda, Mei, Basso, Matthew Joseph, George, William Frederick, and Allport, Philip Patrick

Subjects
Particle Physics - Experiment
Abstract

In order to continue the program of the LHC, the accelerator will be upgraded to the HL-LHC, which will have a design luminosity 10e3 cm^2 s^-1, an order of magnitude greater than the present machine. In order to meet the occupancy and radiation hardness requirements resulting from this increase in luminosity, the present ATLAS tracking detector must be replaced. The ATLAS Collaboration is constructing a new central tracking system based completely on silicon sensors. The system comprises an inner pixel detector, a barrel strip detector and an endcap strip detector. In order to satisfy the radiation hardness requirements we have developed a new n-in-p sensor design. Extensive studies have shown that it results in detectors which comfortably reach the required end-of-life performance. The latest sensor layouts prepared for preproduction, known as ATLAS18, implement this design. However, as well as knowing the performance after a given irradiation fluence, operational considerations require an understanding of the time development of the annealing, and resulting variation of the collected charge, of irradiated detectors at different temperatures. This requirement results from the fact that there are various proposed temperature profiles for the operation of the detector over the expected lifetime of 14 years. Here we describe the measurement of charge collection performance as a function of irradiated fluence and long term annealing time. We also describe a semi-empirical model based on these measurements which allows us to predict the end-of-life charge collection as a function of the temperature profile during operation of the detector. The use of the model to study the effect of annealing on the strip detector at a radius of 40 cm and an integrated irradiation fluence of 16e14 MeV neutron equiv. is presented. This methodology can be applied to other regions of the detector, such as the pixels.

Published
2023

16. Monitoring Quality of ATLAS ITk Strip Sensors/wafers through Database

Author

Fadeyev, Vitaliy, Bach Marques, Eric, Basso, Matthew Joseph, Blue, Andrew James, Federicova, Pavla, Fernandez-Tejero, Xavi, Fournier, Andrew Curtis, Greig, Graham George, Hamersly, Derek August, Hara, Kazuhiko, Hill, Ewan Chin, Hirose, Shigeki, Hommels, Bart, Jones, Dominic, Klein, Christoph Thomas, Koffas, Thomas, Latonova, Vera, Mikestikova, Marcela, Poley, Anne-Luise, Orr, Robert, Rousso, David, Stelzer, Bernd, Sykora, Martin, Ullan, Miguel, Unno, Yoshinobu, and Nakamura, Koji

Subjects
Particle Physics - Experiment
Abstract

High-Luminosity LHC upgrade necessitated a complete replacement of the ATLAS Inner Detector with a larger all-silicon tracker. The strip portion of it covers 165 m2 area, afforded by the strip sensors. Following several prototype iterations and a successful pre-production, a full-scale production started in 2021, to finish by the beginning of 2025. It will include over 20,000 wafers and a factor of 5 higher throughput than pre-production, with about 500 sensors produced and tested per month. The transition to production stressed the need to evaluate the results from the Quality Control (QC) and Quality Assurance (QA) tests quickly to meet the monthly delivery schedule. The test data come from 15 collaborating institutes, therefore a highly distributed system with standardized interfaces was required. Specialized software layers of QA and QC Python code were developed against the backend of ITkdatabase (DB) for this purpose. The developments included particularities and special needs of the Strip Sensors community, such as the large variety of different test devices and test types, the necessary test formats, and different workflows at the test sites. Special attention was paid to techniques facilitating the development and user operations, for example creation of “parallel” set of dummy DB objects for practice purpose, iterative verification of operability, and the automatic upload of test data. The scalability concerns, and automation of the data handling were included in the system architecture from the very inception. The full suite of functionalities include data integrity checks, data processing to extract and evaluate key parameters, cross-test comparisons, and summary reporting for continuous monitoring. We will also describe the lessons learned and the necessary evolution of the system.

Published
2023

17. ATLAS ITk strip sensor quality control procedures and testing site qualification

Author

Mikestikova, Marcela, Affolder, Tony, Affolder, Kirsten, Beaupre, Scott Lee, Beck, Graham, Bernabeu Verdu, Jose, Bevan, Adrian, Dawson, Ian, Dowling, Andrew Jay, Fadeyev, Vitaliy, Federicova, Pavla, Fernandez-Tejero, Xavi, Fournier, Andrew Curtis, Gignac, Matthew, Greig, Graham George, Gunnell, Jane Frances, Hara, Kazuhiko, Hirose, Shigeki, Hommels, Bart, Ishii, Tatsuya, Jessiman, Callan, Johnson, Jacob Wayne, Jones, Dominic, Kachiguine, Serguei, Kang, Nathan Jihoon, Keller, John Stakely, Klein, Christoph Thomas, Koffas, Thomas, Kroll, Jiri, Kvasnicka, Jiri, Lacasta Llacer, Carlos, Latonova, Vera, Martinez-Mc Kinney, Forest, Miyagawa, Paul, Montalbano, Alyssa Rae, Nakamura, Koji, Poley, Anne-Luise, Rousso, David, Ahad, Shah, Slavikova, Eliska Alice, Solaz Contell, Carles, Soldevila Serrano, Urmila, Staats, Ezekiel, Stack, Tynan Louis, Stelzer, Bernd, Tuma, Pavel, Ullan, Miguel, Unno, Yoshinobu, and Zenz, Seth

Subjects
Particle Physics - Experiment
Abstract

The high-luminosity upgrade of the Large Hadron Collider, scheduled to become operational in 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). Radiation hard n+-in-p micro-strip silicon sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. Production of the total amount of 22 000 ITk strip sensors has started in 2020 and will continue until 2025. The ATLAS ITk strip sensor collaboration has the responsibility to monitor the quality of the fabricated devices by performing detailed measurements of individual sensor characteristics and by comparing the obtained results with the tests done by the manufacturer. Dedicated Quality Control (QC) procedures were developed to check whether the delivered large-format sensors adhere to the ATLAS specifications. The institutes performing the QC testing of the pre-production and production ATLAS ITk strip sensors (QC sites) had to initially be qualified for multiple high-throughput tests by successfully completing Site Qualification process. The QC procedures and the qualification process are described in this paper.

Published
2022

18. Evaluation of MOS and Gated Diode Devices of the ATLAS ITk Test Chip

Author

Staats, Ezekiel, Koffas, Thomas, Klein, Christoph Thomas, Jessiman, Callan, Kopsalis, Ioannis, Allport, Philip Patrick, Fleta Corral, Celeste, Ullan, Miguel, Mikestikova, Marcela, Kroll, Jiri, Unno, Yoshinobu, Fadeyev, Vitaliy, and Scharf, Christian

Subjects
Particle Physics - Experiment
Abstract

The new ATLAS Inner Tracker (ITk) sub-detector is necessitated by the impending High Luminosity Large Hadron Collider (HL-LHC) upgrade. This replacement is part of the phase-II upgrade programme for the HL-LHC which will see a sevenfold increase in peak instantaneous luminosity with a total ionizing dose of 53 MRad. The fully solid state ITk will employ silicon n^{+}-in-p microstrip sensors in the outer layers of the tracking detector. The main sensors are manufactured on 6” diameter silicon wafers. Periphery wafer area (halfmoons) to which the main sensor does not extend serves as convenient venues for the implementation of test devices. The primary utility of the test devices is Quality Assurance (QA), that is, the monitoring of the consistency and reliability of the manufacturing process. A Metal-Oxide-Semiconductor (MOS) and Gate-Controlled Diode (GCD) are two such test devices aimed at characterizing the surface oxide and silicon-oxide interface. Measurement procedures and parameters for QA are established for these devices and the viability of these tests for gamma irradiated samples is evaluated. The suitability of these devices to further monitor the strip sensor fabrication process is also investigated.

Published
2022

19. Effect of irradiation and annealing performed with bias voltage applied across the coupling capacitors on the interstrip resistance of ATLAS ITk silicon strip sensors

Author

Kroll, Jiri, Allport, Philip Patrick, Chisholm, Andrew Stephen, Fadeyev, Vitaliy, George, William Frederick, Gonella, Laura, Kopsalis, Ioannis, Kvasnicka, Jiri, Latonova, Vera, Lomas, Joshua David, Mikestikova, Marcela, Shi, Xin, Tuma, Pavel, Ullan, Miguel, Unno, Yoshinobu, and Martinez-Mc Kinney, Forest

Subjects
Particle Physics - Experiment
Abstract

The powering configuration of the silicon strip modules developed for the new Inner Tracker of the ATLAS experiment includes a voltage of up to 0.5 V across the coupling capacitor of each individual strip. However, this voltage is usually not applied in the sensor irradiation studies due to the significant technical and logistical complications. To study the effect of an irradiation and a subsequent beneficial annealing on the strip sensors in real experimental conditions, four prototype ATLAS17LS miniature sensors were irradiated by $^{60}$Co source and annealed, both with and without the bias voltage of 0.5 V applied across the coupling capacitors. The values of interstrip resistance measured on irradiated samples before and after annealing indicate that increase of radiation damage caused by the applied voltage can be compensated by the presence of this voltage during annealing.

Published
2022

20. Analysis of humidity sensitivity of silicon strip sensors for ATLAS upgrade tracker, pre- and post-irradiation

Author

Fernandez-Tejero, Xavi, Affolder, Tony, Bach Marques, Eric, Basso, Matthew Joseph, Bhardwaj, Avani, Cindro, Vladimir, Dowling, Andrew Jay, Fadeyev, Vitaliy, Fleta Corral, Celeste, Fournier, Andrew Curtis, Hara, Kazuhiko, Jessiman, Callan, Keller, John Stakely, Kisliuk, Dylan Perry, Klein, Christoph Thomas, Koffas, Thomas, Kroll, Jiri, Latonova, Vera, Mahtani, Kuunal Kelash, Mandic, Igor, Martinez-Mc Kinney, Forest, Mikestikova, Marcela, Nakamura, Koji, Orr, Robert, Poley, Anne-Luise, Staats, Ezekiel, Stelzer, Bernd, Suzuki, Junki, Ullan, Miguel, Unno, Yoshinobu, and Zatocilova, Iveta

Subjects
Particle Physics - Experiment
Abstract

The ATLAS collaboration is working on a major upgrade of the Inner-Tracker, able to withstand the extreme operational conditions expected for the forthcoming High-Luminosity Large Hadron Collider (HL-LHC) upgrade. During the prototyping phase of the new large area silicon strip sensors, the community observed a degradation of the breakdown voltage (down to 200-500 V from >= 1 kV in bias voltage) when the devices with final technology options were exposed to high humidity, recovering the electrical performance prior to the exposure after a short period in dry conditions [J. Fernandez-Tejero, et al., NIM A 978 (2020) 164406]. These findings helped to understand the humidity sensitivity of the new sensors, defining the optimal working conditions and handling recommendations during production testing. In 2020, the ATLAS strip sensor community started the pre-production phase, receiving the first sensors fabricated by Hamamatsu Photonics K.K. using the final layout design. The work presented here is focused on the analysis of the humidity sensitivity of production-like sensors with different surface properties, providing new results on their influence on the humidity sensitivity observed during the prototyping phase. Additionally, the new production strip sensors were exposed to short (days) and long (months) term exposures to high humidity. This study allows to recreate and evaluate the influence of the detector integration environment expected during the Long Shutdown 3 (LS3) in 2025, where the sensors will be exposed to ambient humidity for prolonged times. A subset of the production-like sensors were irradiated up to fluences expected at the end of the HL-LHC lifetime, allowing the study of the evolution of the humidity sensitivity and influence of the passivation layers on sensors exposed to extreme radiation conditions.

Published
2022

21. Establishing the Quality Assurance programme for the strip sensor production of the ATLAS tracker upgrade including irradiation with neutrons, photons and protons to HL-LHC fluences

Author

Kopsalis, Ioannis, Allport, Philip Patrick, Bach Marques, Eric, Bhardwaj, Avani, Chisholm, Andrew Stephen, Cindro, Vladimir, Fadeyev, Vitaliy, Federicova, Pavla, Fernandez-Tejero, Xavi, Fleta Corral, Celeste, Freeman, Patrick Moriishi, Glover, James Julian, Gonella, Laura, Hirose, Shigeki, Hunter, Amelia, Ishii, Tatsuya, Knight, Timothy Michael, Kroll, Jiri, Kvasnicka, Jiri, Lacasta Llacer, Carlos, Latonova, Vera, Lomas, Joshua David, Mandic, Igor, Mikestikova, Marcela, Nakamura, Koji, Orr, Robert, Pyatt, Simon, Sato, Koki, Solaz Contell, Carles, Soldevila Serrano, Urmila, Thomas, Juergen, Ullan, Miguel, Unno, Yoshinobu, George, William Frederick, and Hara, Kazuhiko

Subjects
Instrumentation, Particle Physics - Experiment, Mathematical Physics
Abstract

The successful pre-production delivery of strip sensors for the new Inner Tracker (ITk) for the upgraded ATLAS detector at the High Luminosity LHC (HL-LHC) at CERN was completed and based on their performance full production has commenced. The overall delivery period is anticipated to last 4 years to complete the approximately 22000 sensors required for the ITk. For Quality Assurance (QA), a number of test structures designed by the collaboration, along with a large area diode and miniature version of the main sensor, are produced in every wafer by the foundry Hamamatsu Photonics K.K (HPK). As well as Quality Control (QC) checks on every main sensor, samples of the QA pieces from each delivery batch are tested both before and after irradiation with results after exposure to neutrons, gammas or protons to fluences and doses corresponding to those anticipated after operation at the HL-LHC to roughly 1.5 times the ultimate integrated luminosity of 4000 fb-1. In this paper the procedures are presented and the studies carried out to establish that the seven ITk QA Strip Sensor irradiation and test sites meet all the requirements to support this very extensive programme throughout the strip sensor production phase for the ITk project.

Published
2023

26. Bulk damage in DMILL npn bipolar transistors caused by thermal neutrons versus protons and fast neutrons

Author

Mandic, Igor, Cindro, Vladimir, Kramberger, Gregor, Kristof, Edvard S., Mikuz, Marko, Vrtacnik, Danilo, Ullan, Miguel, and Anghinolfi, Francis

Subjects
Bipolar transistors -- Research, Circuit components -- Analysis, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

DMILL bipolar transistors (npn) were exposed to 24 GeV protons and fast and thermal neutrons to fluences up to 6 x [10.sup.14] n/[cm.sup.2]. Transistor common emitter current gain ([[beta] = [I.sub.collector]/[I.sub.base]) was measured after irradiations. It was found that [beta] degradation scales as [DELTA] (1/[beta]) = [k.sub.T] x [[PHI].sub.T], where [[PHI].sub.T], is the fluence of thermal neutrons and as [DELTA] (1//[beta]) = [k.sub.eq] x [[PHI].sub.eq], with [[PHI].sub.eq], 1-MeV equivalent fluence, if transistors are irradiated with protons or fast neutrons. Large damage factor [k.sub.T] ~ 3 x [k.sub.eq] was measured. Thermal neutrons do not have sufficient energy to displace a Si atom. Their damage mechanism is, therefore, identified with [sup.10]B[(n, [alpha]).sup.7] Li reaction from which energetic [alpha] and Li particles produce bulk damage in the base of the device. Boron is used as the base dopant in these transistors having also highly doped regions below base contacts. Irradiations with neutrons with energies distributed from thermal to fast show that gain degradation adds up as [DELTA](1/[beta]) = [k.sub.T] x [[PHI].sub.T] + [k.sub.eq] x [[PHI].sub.eq]. Index Terms--Bipolar transistor, radiation damage, thermal neutrons.

Published
2004

27. High-pitch metal-on-glass technology for pad pitch adaptation between detectors and readout electronics

Author

Ullan, Miguel, Lozano, Manuel, Campabadal, Francesca, Fleta, Celeste, Garcia, Carmen, Gonzalez, Francisco, and Bernabeu, Jose

Subjects
Nuclear physics -- Research, Detectors, Electronics industry, Electronics industry, Business, Electronics, Electronics and electrical industries
Abstract

Modern high-energy physics and astrophysics strip detectors have increased channel density to levels at which their connection with readout electronics has become very complex due to high pad pitch. Also, direct wire bonding is prevented by the fact that typically detector's pad pitch and electronics' pad pitch do not match. A high-pitch metal-on-glass technology is presented, that allows pad pitch adaptation between detectors and readout electronics. It consists of high-density metal lines on top of an insulating glass substrate. A photoresist layer is deposited covering the metal tracks for passivation and protection The technology is tested for conductivity, bondability, bonding pull force, peel off, and radiation hardness, and it is an established technology in the clean room of the CNM Institute in Barcelona. This technology has been chosen by the ATLAS Collaboration for the pad pitch adapters (PPA) of the SCT Endcap Modules, by a Compton camera project, and by other HEP groups for interconnection between detectors and readout electronics. Index Terms--Hybrid integrated circuit bonding, Hybrid integrated circuit interconnections, integrated circuit bonding, integrated circuit metallization, interconnections, microstrip, radiation detectors, thin film circuit fabrication.

Published
2004

28. Radiation hardness of silicon detectors for high-energy physics applications

Author

Candelori, Andrea, Bisello, Dario, Rando, Riccardo, Kaminski, Alexander, Wyss, Jeff, Litovchenko, Alexei, Betta, Gianfranco Dalla, Lozano, Manuel, Boscardin, Maurizio, Martinez, Carlos, Ullan, Miguel, and Zorzi, Nicola

Subjects
Neutrons -- Research, Silicon diodes -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Oxygenated and standard (not oxygenated) silicon diodes processed by CNM and IRST have been irradiated by 27 MeV protons and compared with standard devices from ST Microelectronics. As expected, the leakage current density increase rate ([alpha]) and its annealing do not show any significant dependence on starting material, oxygenation and/or device processing. On the contrary, oxygenation improves the radiation hardness by decreasing the acceptor introduction rate ([beta]) and mitigating the depletion voltage ([V.sub.dep]) increase, with the [beta] parameter depending also on starting material and/or effects related to device processing for standard diodes. Finally, these results are included in a general review on the state of the art for silicon detector radiation hardening, confirming the good performance of the considered technologies. Index Terms--Diodes, neutron radiation effects, oxygenation, proton radiation effects, radiation detectors.

Published
2003

29. Ionization damage on ATLAS-SCT front-end electronics considering low-dose-rate effects

Author

Ullan, Miguel, Dorfan, David, Dubbs, Tim, Grillo, Alexander A., Spencer, Ned, Seiden, Abraham, Spieler, Helmuth, Gilchriese, Murdock, and Lozano, Manuel

Subjects
Bipolar integrated circuits -- Testing, Radiation warning systems -- Testing, Skin, Effect of radiation on the -- Measurement, Laser materials, Effect of radiation on, Metals, Effect of radiation on, Silicon crystals, Effect of radiation on, Diamonds, Effect of radiation on, Crystals, Effect of radiation on, Business, Electronics, Electronics and electrical industries
Abstract

Low-dose-rate effects (LDREs) in bipolar technologies complicate the hardness assurance testing for high energy physics applications. The damage produced in the ICs in the real experiment can be underestimated if fast irradiations are carried out, while experiments done at the real dose rate are usually unpractical due to the still high total doses involved. In this work, the sensitivity to LDREs of the two bipolar technologies proposed for the ATLAS-SCT experiment in the LHC at CERN is evaluated, its magnitude measured at the total dose of interest for the transistors, and accelerated tests are performed, when necessary, on the actual ICs using high temperatures in order to mimic the effects of the low dose rate. One of the proposed technologies (DMILL) has been found free of LDREs, thus easing the radiation damage studies performed on it. The other one (CB2) suffers from LDRE. The effects have been measured for the individual devices. Experiments have been carried out to find the temperature that best mimics the LDRE at high dose rates. This temperature has been used in accelerated tests that have been performed on the chip fabricated with this technology in order to obtain the ionization damage that this IC will suffer under the real conditions. Index Terms--Bipolar integrated circuits, Bipolar transistors, ionisation damage, low-dose-rate effects (LDRE), radiation detectors, radiation effects.

Published
2002

31. Test structures for MCM-D technology characterization

Author

Lozano, Manuel, Santander, Joaquin, Cabruja, Enric, Perello, Carles, Ullan, Miguel, Lora-Tamayo, Emilio, Doyle, Rory, McCarthy, Ger, and Barton, John

Subjects
Semiconductor chips -- Testing, Semiconductors -- Testing, Electric resistance -- Research, Integrated circuits -- Testing, Business, Computers, Electronics, Electronics and electrical industries
Abstract

In this paper we present a set of classic and novel test structures addressed to fully characterize multichip module (MCM) technologies. The structures have been implemented and fabricated in our D-type, flip-chip, ball grid array, silicon substrate technology. In this technology, a silicon chip is used as a substrate on which other commercial chips are flipped and soldered by a screen-printing method. These complex technologies have specific test problems that are solved with this approach. We have specially focused on the measurement of the effects of wafer rerouting on CMOS parameters, the chip-to-chip ball contact resistance, thermal behavior, yield, and reliability of the technology. Experimental results are shown, proving that this methodology is suitable for our technology and can also be applied to other different MCM technologies. Index Terms - Contact resistance, flip-chip devices, multichip modules, packaging, reliability testing, semiconductor device testing, test structures.

Published
1999

32. Characterisation of strip silicon microstrip detectors for the ATLAS Phase-II upgrade with a micro-focused X-ray beam

Author

Poley, Luise, Blue, Andrew, Bates, Richard, Bloch, Ingo, Diez, Sergio, Fernandez-Tejero, Javier, Fleta, Celeste, Gallop, Bruce, Greenall, Ashley, Gregor, Ingrid-Maria, Hara, Kazuhiko, Ikegami, Yoichi, Lacasta, Carlos, Lohwasser, Kristin, Maneuski, Dzmitry, Nagorski, Sebastian, Pape, Ian, Phillips, Peter W., Sperlich, Dennis, Sawhney, Kawal, Soldevila, Urmila, Ullan, Miguel, Unno, Yoshinobu, and Warren, Matt

Subjects
Physics::Instrumentation and Detectors
Abstract

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed\ud to maximise the physics potential through a sizable increase in the\ud luminosity up to 6 · 1034 cm−2\ud s\ud −1\ud . A consequence of this increased luminosity\ud is the expected radiation damage at 3000 fb−1\ud after ten years of\ud operation, requiring the tracking detectors to withstand fluences to over\ud 1 · 1016 1 MeV neq/cm2\ud . In order to cope with the consequent increased\ud readout rates, a complete re-design of the current ATLAS Inner Detector\ud (ID) is being developed as the Inner Tracker (ITk).\ud Two proposed detectors for the ATLAS strip tracker region of the\ud ITk were characterized at the Diamond Light Source with a 3 µm FWHM\ud 15 keV micro focused X-ray beam. The devices under test were a 320 µm\ud thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to\ud a 130 nm CMOS binary readout chip (ABC130) and a 320 µm thick full\ud size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire\ud bonded to 250 nm CMOS binary readout chips (ABCN-25).\ud A resolution better than the inter strip pitch of the 74.5 µm strips\ud was achieved for both detectors. The effect of the p-stop diffusion layers\ud between strips was investigated in detail for the wire bond pad regions.\ud Inter strip charge collection measurements indicate that the effective\ud width of the strip on the silicon sensors is determined by p-stop regions\ud between the strips rather than the strip pitch.

Published
2016

34. The International Large Detector: Letter of Intent

Author

Abe, Toshinori, Abernathy, Jason M., Abramowicz, Halina, Adamus, Marek, Adeva, Bernardo, Afanaciev, Konstantin, Aguilar-Saavedra, Juan Antonio, Alabau Pons, Carmen, Albrecht, Hartwig, Andricek, Ladislav, Anduze, Marc, Aplin, Steve J., Arai, Yasuo, Asano, Masaki, Attie, David, Attree, Derek J., Burger, Jochen, Bailey, David, Balbuena, Juan Pablo, Ball, Markus, Ballin, James, Barbi, Mauricio, Barlow, Roger, Bartels, Christoph, Bartsch, Valeria, Bassignana, Daniela, Bates, Richard, Baudot, Jerome, Bechtle, Philip, Beck, Jeannine, Beckmann, Moritz, Bedjidian, Marc, Behnke, Ties, Belkadhi, Khaled, Bellerive, Alain, Bentvelsen, Stan, Bergauer, Thomas, Berggren, C.Mikael U., Bergholz, Matthias, Bernreuther, Werner, Besancon, Marc, Besson, Auguste, Bhattacharya, Sudeb, Bhuyan, Bipul, Biebel, Otmar, Bilki, Burak, Blair, Grahame, Blumlein, Johannes, Bo, Li, Boisvert, Veronique, Bondar, A., Bonvicini, Giovanni, Boos, Eduard, Boudry, Vincent, Bouquet, Bernard, Bouvier, Joel, Bozovic-Jelisavcic, Ivanka, Brient, Jean-Claude, Brock, Ian, Brogna, Andrea, Buchholz, Peter, Buesser, Karsten, Bulgheroni, Antonio, Butler, John, Buttar, Craig, Buzulutskov, A.F., Caccia, Massimo, Caiazza, Stefano, Calcaterra, Alessandro, Caldwell, Allen, Callier, Stephane L.C., Calvo Alamillo, Enrique, Campbell, Michael, Campbell, Alan J., Cappellini, Chiara, Carloganu, Cristina, Castro, Nuno, Castro Carballo, Maria Elena, Chadeeva, Marina, Chakraborty, Dhiman, Chang, Paoti, Charpy, Alexandre, Chen, Xun, Chen, Shaomin, Chen, Hongfang, Cheon, Byunggu, Choi, Suyong, Choudhary, B.C., Christen, Sandra, Ciborowski, Jacek, Ciobanu, Catalin, Claus, Gilles, Clerc, Catherine, Coca, Cornelia, Colas, Paul, Colijn, Auke, Colledani, Claude, Combaret, Christophe, Cornat, Remi, Cornebise, Patrick, Corriveau, Francois, Cvach, Jaroslav, Czakon, Michal, D'Ascenzo, Nicola, Da Silva, Wilfrid, Dadoun, Olivier, Dam, Mogens, Damerell, Chris, Danilov, Mikhail, Daniluk, Witold, Daubard, Guillaume, David, Dorte, David, Jacques, De Boer, Wim, De Groot, Nicolo, De Jong, Sijbrand, De Jong, Paul, De La Taille, Christophe, De Masi, Rita, De Roeck, Albert, Decotigny, David, Dehmelt, Klaus, Delagnes, Eric, Deng, Zhi, Desch, Klaus, Dieguez, Angel, Diener, Ralf, Dima, Mihai-Octavian, Dissertori, Gunther, Dixit, Madhu S., Dolezal, Zdenek, Dolgoshein, Boris A., Dollan, Ralph, Dorokhov, Andrei, Doublet, Philippe, Doyle, Tony, Doziere, Guy, Dragicevic, Marko, Drasal, Zbynek, Drugakov, Vladimir, Duarte Campderros, Jordi, Dulucq, Frederic, Dumitru, Laurentiu Alexandru, Dzahini, Daniel, Eberl, Helmut, Eckerlin, Guenter, Ehrenfeld, Wolfgang, Eigen, Gerald, Eklund, Lars, Elsen, Eckhard, Elsener, Konrad, Emeliantchik, Igor, Engels, Jan, Evrard, Christophe, Fabbri, Riccardo, Faber, Gerard, Faucci Giannelli, Michele, Faus-Golfe, Angeles, Feege, Nils, Feng, Cunfeng, Ferencei, Jozef, Fernandez Garcia, Marcos, Filthaut, Frank, Fleck, Ivor, Fleischer, Manfred, Fleta, Celeste, Fleury, Julien L., Fontaine, Jean-Charles, Foster, Brian, Fourches, Nicolas, Fouz, Mary-Cruz, Frank, Sebastian, Frey, Ariane, Frotin, Mickael, Fujii, Hirofumi, Fujii, Keisuke, Fujimoto, Junpei, Fujita, Yowichi, Fusayasu, Takahiro, Fuster, Juan, Gaddi, Andrea, Gaede, Frank, Galkin, Alexei, Galkin, Valery, Gallas, Abraham, Gallin-Martel, Laurent, Gamba, Diego, Gao, Yuanning, Garrido Beltran, Lluis, Garutti, Erika, Gastaldi, Franck, Gaur, Bakul, Gay, Pascal, Gellrich, Andreas, Genat, Jean-Francois, Gentile, Simonetta, Gerwig, Hubert, Gibbons, Lawrence, Ginina, Elena, Giraud, Julien, Giraudo, Giuseppe, Gladilin, Leonid, Goldstein, Joel, Gonzalez Sanchez, Francisco Javier, Gournaris, Filimon, Greenshaw, Tim, Greenwood, Z.D., Grefe, Christian, Gregor, Ingrid-Maria, Grenier, Gerald Jean, Gris, Philippe, Grondin, Denis, Grunewald, Martin, Grzelak, Grzegorz, Gurtu, Atul, Haas, Tobias, Haensel, Stephan, Hajdu, Csaba, Hallermann, Lea, Han, Liang, Hansen, Peter H., Hara, Takanori, Harder, Kristian, Hartin, Anthony, Haruyama, Tomiyoshi, Harz, Martin, Hasegawa, Yoji, Hauschild, Michael, He, Qing, Hedberg, Vincent, Hedin, David, Heinze, Isa, Helebrant, Christian, Henschel, Hans, Hensel, Carsten, Hertenberger, Ralf, Herve, Alain, Higuchi, Takeo, Himmi, Abdelkader, Hironori, Kazurayama, Hlucha, Hana, Hommels, Bart, Horii, Yasuyuki, Horvath, Dezso, Hostachy, Jean-Yves, Hou, Wei-Shu, Hu-Guo, Christine, Huang, Xingtao, Huppert, Jean Francois, Ide, Yasuhiro, Idzik, Marek, Iglesias Escudero, Carmen, Ignatenko, Alexandr, Igonkina, Olga, Ikeda, Hirokazu, Ikematsu, Katsumasa, Ikemoto, Yukiko, Ikuno, Toshinori, Imbault, Didier, Imhof, Andreas, Imhoff, Marc, Ingbir, Ronen, Inoue, Eiji, Ioannis, Giomataris, Ishikawa, Akimasa, Itagaki, Kennosuke, Ito, Kazutoshi, Itoh, Hideo, Iwabuchi, Masaya, Iwai, Go, Iwamoto, Toshiyuki, Jacosalem, Editha P., Jaramillo Echeverria, Richard, Jeans, Daniel T D., Jing, Fanfan, Jing, Ge, Jokic, Stevan, Jonsson, Leif, Jore, Matthieu, Jovin, Tatjana, Kafer, Daniela, Kajino, Fumiyoshi, Kamai, Yusuke, Kaminski, Jochen, Kamiya, Yoshio, Kaplan, Alexander, Kapusta, Frederic, Kar, Deepak, Karlen, Dean, Katayama, Nobu, Kato, Eriko, Kato, Yukihiro, Kaukher, Alexander, Kawagoe, Kiyotomo, Kawahara, Hiroki, Kawai, Masanori, Kawasaki, Takeo, Khan, Sameen Ahmed, Kieffer, Robert, Kielar, Eryk, Kiesenhofer, Wolfgang, Kiesling, Christian M., Killenberg, Martin, Kim, Donghee, Kim, Choong Sun, Kim, Guinyun, Kim, Hong Joo, Kim, Eun-Joo, Kim, Hyunok, Kim, Shinhong, Kircher, Francois, Kisielewska, Danuta, Kleinwort, Claus, Klimkovich, Tatsiana, Kluge, Hanna, Kluit, Peter Martin, Kobayashi, Makoto, Kobel, Michael, Kodama, Hideyo, Kodys, Peter, Koetz, U., Koffeman, Els, Kohriki, Takashi, Komamiya, Sachio, Kondou, Yoshinari, Korbel, Volker, Kotera, Katsushige, Krucker, Dirk, Kraml, Sabine, Krammer, Manfred, Krastev, Kaloyan, Krause, Bernward, Krautscheid, Thorsten, Kschioneck, Kirsten, Kuang, Yu-Ping, Kuhlmann, Jan, Kuroiwa, Hirotoshi, Kusano, Tomonori, Kvasnicka, Peter, Lacasta Llacer, Carlos, Lagorio, Eric, Laktineh, Imad, Lange, Wolfgang, Lebrun, Patrice, Lee, Jik, Lehner, Frank, Lesiak, Tadeusz, Levy, Aharon, Li, Bo, Li, Ting, Li, Yulan, Li, Hengne, Liang, Zuotang, Lima, Guilherme, Linde, Frank, Linssen, Lucie, Linzmaier, Diana, List, Benno, List, Jenny, Liu, Bo, Llopart Cudie, Xavier, Lohmann, Wolfgang, Lopez Virto, Amparo, Lozano, Manuel, Lu, Shaojun, Lucaci-Timoce, Angela Isabela, Lumb, Nick, Lundberg, Bjorn, Lutz, Pierre, Lutz, Benjamin, Lux, Thorsten, Luzniak, Pawel, Lyapin, Alexey, Ma, Wengan, Maczewski, Lukasz, Mader, Wolfgang F., Maity, Manas, Majumdar, Nayana, Majumder, Gobinda, Maki, Akihiro, Makida, Yasuhiro, Mamuzic, Judita, Marc, Dhellot, Marchesini, Ivan, Marcisovsky, Michal, Marias, Carlos, Marshall, John, Martens, Cornelius, Martin, Victoria J., Martin, Jean-Pierre, Martin-Chassard, Gisele, Martinez Rivero, Celso, Martyn, Hans-Ulrich, Mathez, Herve, Mathieu, Antoine, Matsuda, Takeshi, Matsunaga, Hiroyuki, Matsushita, Takashi, Mavromanolakis, Georgios, Mcdonald, Kirk T., Mereu, Paolo, Merk, Marcel, Merkin, Mikhail M., Meyer, Niels, Meyners, Norbert, Mihara, Satoshi, Miller, David J., Miller, Owen, Mitaroff, Winfried A., Miyamoto, Akiya, Miyata, Hitoshi, Mjornmark, Ulf, Mnich, Joachim, Monig, Klaus, Moll, Andreas, Moortgat-Pick, Gudrid A., Mora De Freitas, Paulo, Morel, Frederic, Moretti, Stefano, Morgunov, Vasily, Mori, Toshinori, Mori, Takashi, Morin, Laurent, Morozov, Sergey, Moser, Hans-Gunther, Moser, Fabian, Moya, David, Mudrinic, Mihajlo, Mukhopadhyay, Supratik, Murakami, Takeshi, Musa, Luciano, Musat, Gabriel, Nagamine, Tadashi, Nakamura, Isamu, Nakano, Eiichi, Nakashima, Kenichi, Nakayoshi, Kazuo, Nakazawa, Hideyuki, Nam, Shinwoo, Nam, Jiwoo, Nemecek, Stanislav, Niebuhr, Carsten, Niechciol, Marcus, Niezurawski, Piotr, Nishida, Shohei, Nishiyama, Miho, Nitoh, Osamu, Norbeck, Ed, Nozaki, Mitsuaki, O'Shea, Val, Ohlerich, Martin, Okada, Nobuchika, Olchevski, Alexander, Olivier, Bob, Oliwa, Krzysztof, Omori, Tsunehiko, Onel, Yasar, Ono, Hiroaki, Ono, Yoshimasa, Onuki, Yoshiyuki, Ootani, Wataru, Orava, Risto, Orlandea, Marius Ciprian, Oskarsson, Anders, Osland, Per, Ossetski, Dmitri, Osterman, Lennart, Padilla, Cristobal, Pandurovic, Mila, Park, Il Hung, Park, Hwanbae, Parkes, Chris, Patrick, Ghislain, Patterson, J.Ritchie, Pawlik, Bogdan, Pellegrini, Giulio, Pellegrino, Antonio, Peterson, Daniel, Petrov, Alexander, Pham, Thanh Hung, Piccolo, Marcello, Poeschl, Roman, Polak, Ivo, Popova, Elena, Postranecky, Martin, Prahl, Volker, Prudent, Xavier, Przysiezniak, Helenka, Puerta-Pelayo, Jesus, Qian, Wenbin, Quadt, Arnulf, Rarbi, Fatah-Ellah, Raspereza, Alexei, Ratti, Lodovico, Raux, Ludovic, Raven, Gerhard, Re, Valerio, Regler, Meinhard, Reinhard, Marcel, Renz, Uwe, Repain, Philippe, Repond, Jose, Richard, Francois, Riemann, Sabine, Riemann, Tord, Riera-Babures, Jordi, Riu, Imma, Robert, Kieffer, Robson, Aidan, Roloff, Philipp, Rosca, Aura, Rosemann, Christoph, Rosiek, Janusz, Rossmanith, Robert, Roth, Stefan, Royon, Christophe, Ruan, Manqi, Ruiz-Jimeno, Alberto, Rusinov, Vladimir, Ruzicka, Pavel, Ryzhikov, Dmitri, Saborido, Juan J., Sadeh, Iftach, Sailer, Andre, Saito, Masatoshi, Sakuma, Takayuki, Sanami, Toshiya, Sanuki, Tomoyuki, Sarkar, Sandip, Sasaki, Rei, Sato, Yutaro, Saveliev, Valeri, Savoy-Navarro, Aurore, Sawyer, Lee, Schafer, Oliver, Schalicke, Andreas, Schuler, K.Peter, Schade, Peter, Schaffran, Joern, Scheirich, Jan, Schlatter, Dieter, Schmidt, Ringo Sebastian, Schmitt, Sebastian, Schneekloth, Uwe, Schreiber, Heinz Juergen, Schultz-Coulon, Hans-Christian, Schumacher, Markus, Schumm, Bruce A., Schuwalow, Sergej, Schwierz, Rainer, Sefkow, Felix, Sefri, Rachid, Seguin-Moreau, Nathalie, Seidel, Katja, Sekaric, Jadranka, Sendai, Hiroshi, Settles, Ronald Dean, Shao, Ming, Shechtman, L.I., Shimazaki, Shoichi, Shumeiko, Nikolai, Sicho, Petr, Simon, Frank, Sinram, Klaus, Smiljanic, Ivan, Smiljkovic, Nebojsa, Smolik, Jan, Sobloher, Blanka, Soldner, Christian, Song, Kezhu, Sopczak, Andre, Speckmayer, Peter, Stenlund, Evert, Stockinger, Dominik, Stoeck, Holger, Strohmer, Raimund, Straessner, Arno, Stromhagen, Richard, Sudo, Yuji, Suehara, Taikan, Suekane, Fumihiko, Suetsugu, Yusuke, Sugimoto, Yasuhiro, Sugiyama, Akira, Sumisawa, Kazutaka, Suzuki, Shiro, Swientek, Krzysztof, Tabassam, Hajrah, Takahashi, Tohru, Takeda, Hiroshi, Takeshita, Tohru, Takubo, Yosuke, Tanabe, Tomohiko, Tanaka, Shuji, Tanaka, Ken-Ichi, Tanaka, Manobu, Tapprogge, Stefan, Tarkovsky, Evgueny I., Tauchi, Toshiaki, Tauchi, Kazuya, Telnov, Valery I., Teodorescu, Eliza, Thomson, Mark, Tian, Junping, Timmermans, Jan, Titov, Maxim P., Tokushuku, Katsuo, Tozuka, Shunsuke, Tsuboyama, Toru, Ueno, Koji, Ullan, Miguel, Uozumi, Satoru, Urakawa, Junji, Ushakov, Andriy, Ushiroda, Yutaka, Valentan, Manfred, Valin, Isabelle, Van Der Graaf, Harry, Van Doren, Brian, Van Kooten, Rick J., Vander Donckt, Muriel, Vanel, Jean-Charles, Vazquez Regueiro, Pablo, Verzocchi, Marco, Vescovi, Christophe, Videau, Henri L., Vila, Ivan, Vilasis-Cardona, Xavier, Vogel, Adrian, Volkenborn, Robert, Vos, Marcel, Voutsinas, Yorgos, Vrba, Vaclav, Vreeswijk, Marcel, Walsh, Roberval, Waltenberger, Wolfgang, Wang, Min-Zu, Wang, Yi, Wang, Xiaoliang, Wang, Qun, Wang, Meng, Ward, David R., Warren, Matthew, Watanabe, Minori, Watanabe, Takashi, Watson, Nigel K., Wattimena, Nanda, Wendt, Oliver, Wermes, Norbert, Weuste, Lars, Wichmann, Katarzyna, Wienemann, Peter, Wierba, Wojciech, Wilson, Graham W., Wilson, John A., Wing, Matthew, Winter, Marc, Wobisch, Markus, Worek, Malgorzata, Xella, Stefania, Xu, Zizong, Yamaguchi, Akira, Yamaguchi, Hiroshi, Yamamoto, Hitoshi, Yamaoka, Hiroshi, Yamashita, Satoru, Yamauchi, M., Yamazaki, Yuji, Yamouni, Mahfoud, Yan, Wenbiao, Yanagida, Koji, Yang, Haijun, Yang, Jongmann, Yang, Jin Min, Yang, Zhenwei, Yasu, Yoshiji, Yonamine, Ryo, Yoshida, Kohei, Yoshida, Takuo, Yoshioka, Tamaki, Yu, Chunxu, Yu, Intae, Yue, Qian, Zacek, Josef, Zalesak, Jaroslav, Zarnecki, Aleksander Filip, Zawiejski, Leszek, Zeitnitz, Christian, Zerwas, Dirk, Zeuner, Wolfram, Zhang, Yanxi, Zhang, Ziping, Zhang, Renyou, Zhang, Xueyao, Zhang, Zhiqing, Zhao, Jiawei, Zhao, Zhengguo, Zheng, Baojun, Zhong, Liang, Zhou, Yongzhao, Zhu, Xianglei, Zhu, Chengguang, Zomer, Fabian, and Zutshi, Vishnu

Subjects
Physics, Particle physics, Time projection chamber, Large Hadron Collider, International Linear Collider, Physics::Instrumentation and Detectors, 010308 nuclear & particles physics, Detector, Particle accelerator, Magnetic detector, 01 natural sciences, law.invention, law, 0103 physical sciences, Physics::Accelerator Physics, High Energy Physics::Experiment, 010306 general physics, Particle Physics - Experiment, Lepton, Event reconstruction
Abstract

The International Large Detector (ILD) is a concept for a detector at the International Linear Collider, ILC. The ILC will collide electrons and positrons at energies of initially 500 GeV, upgradeable to 1 TeV. The ILC has an ambitious physics program, which will extend and complement that of the Large Hadron Collider (LHC). A hallmark of physics at the ILC is precision. The clean initial state and the comparatively benign environment of a lepton collider are ideally suited to high precision measurements. To take full advantage of the physics potential of ILC places great demands on the detector performance. The design of ILD is driven by these requirements. Excellent calorimetry and tracking are combined to obtain the best possible overall event reconstruction, including the capability to reconstruct individual particles within jets for particle ow calorimetry. This requires excellent spatial resolution for all detector systems. A highly granular calorimeter system is combined with a central tracker which stresses redundancy and efficiency. In addition, efficient reconstruction of secondary vertices and excellent momentum resolution for charged particles are essential for an ILC detector. The interaction region of the ILC is designed to host two detectors, which can be moved into the beam position with a push-pull scheme. The mechanical design of ILD and the overall integration of subdetectors takes these operational condition s into account. The International Large Detector (ILD) is a concept for a detector at the International Linear Collider, ILC. The ILC will collide electrons and positrons at energies of initially 500 GeV, upgradeable to 1 TeV. The ILC has an ambitious physics program, which will extend and complement that of the Large Hadron Collider (LHC). A hallmark of physics at the ILC is precision. The clean initial state and the comparatively benign environment of a lepton collider are ideally suited to high precision measurements. To take full advantage of the physics potential of ILC places great demands on the detector performance. The design of ILD is driven by these requirements. Excellent calorimetry and tracking are combined to obtain the best possible overall event reconstruction, including the capability to reconstruct individual particles within jets for particle ow calorimetry. This requires excellent spatial resolution for all detector systems. A highly granular calorimeter system is combined with a central tracker which stresses redundancy and efficiency. In addition, efficient reconstruction of secondary vertices and excellent momentum resolution for charged particles are essential for an ILC detector. The interaction region of the ILC is designed to host two detectors, which can be moved into the beam position with a push-pull scheme. The mechanical design of ILD and the overall integration of subdetectors takes these operational conditions into account.

Published
2010

41. Bulk Damage in DMILL npn Bipolar Transistors Caused by Thermal Neutrons Versus Protons and Fast Neutrons.

Author

Mandió, Igor, Cindro, Vladimir, Kramberger, Gregor, Krištof, Edvard S., Miku&zcaron, Marko, Vrtčnik, Danilo, Ullan, Miguel, and Anghinolfi, Francis

Subjects
TRANSISTORS, THERMAL neutrons, PROTONS, NEUTRONS, IRRADIATION, BORON
Abstract

DMILL bipolar transistors (npn) were exposed to 24 GeV protons and fast and thermal neutrons to fluences up to 6 · 1014 n/cm2. Transistor common emitter current gain (β = I collector/Ibase) was measured after irradiations. It was found that β degradation scales as Δ(1/β) = kT · ΦT where φT is the fluence of thermal neutrons and as Δ(1/β) = keq with · φeq 1-MeV equivalent fluence, if transistors are irradiated with protons or fast neutrons. Large damage factor kT ∼ 3 · keq was measured. Thermal neutrons do not have sufficient energy to displace a Si atom. Their damage mechanism is, therefore, identified with 10B(n, α)7 Li reaction from which energetic α and Li particles produce bulk damage in the base of the device. Boron is used as the base dopant in these transistors having also highly doped regions below base contacts. Irradiations with neutrons with energies distributed from thermal to fast show that gain degradation adds up as Δ(1/β) = kT · φ T + keq· keq. [ABSTRACT FROM AUTHOR]

Published
2004
Full Text
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42. RD50 status report 2006: Radiation hard semiconductor devices for very high luminosity colliders

Author

Balbuena, Pablo, Campabadal, Francesca, Diez, Sergio, Lozano, Manuel, Pellegrini, Giulio, Rafi, Joan Marc, Ullan, Miguel, Ambrico, Marianna, Creanza, Donato, Palma, Mauro, Ligonzo, Teresa, Manna, Norman, Radicci, Valeria, Schiavulli, Luigi, Kierstead, Jim, Li, Zheng, Cavallini, Anna, Buda, Manuela, Lazanu, Sorina, Pintilie, Lucian, Pintilie, Ioana, Popa, Andreia-Ioana, Lazanu, Ionel, Collins, Paula, Gill, Karl Aaron, Glaser, Maurice, Hoedlmoser, Herbert, Joram, Christian, Moll, Michael, Wright, Victoria, Gossling, Claus, Klingenberg, Reiner, Weber, Jens, Wunstorf, Renate, Roder, Ralf, Stolze, Dieter, Uebersee, Hartmut, Adey, James, Blumenau, A., Coutinho, J., Eberlein, T., Fall, C., Goss, J., Hourahine, B., Jones, Robert, Pinho, N., Coluccia, Rita, Kwan, Simon, Sellberg, Greg, Borchi, Emilio, Bruzzi, Mara, Focardi, Ettore, Lagomarsino, Stefano, Macchiolo, Anna, Menichelli, David, Miglio, Stefania, Scaringella, Monica, Sciortino, Silvio, Tosi, Carlo, Eckert, Simon, Ehrich, Thies, Kuehn, Susanne, Parzefall, Ulrich, Bates, Richard, Blue, Andrew, Bussey, Peter, Craig Buttar, Cunningham, William, Doherty, Freddie, Eklund, Lars, Fleta, Celeste, Bates, Alison G., Haddad, Lina, James, Grant, Mathieson, Keith, Melone, J., O Shea, Val, Parkes, Chris, Pennicard, David, Saavedra, Aldo, Buhmann, Peter, Contarato, Devis, Fretwurst, Eckhart, Honniger, Frank, Lindstrom, Gunnar, Pein, Uwe, Stahl, Jorg, Harkonen, Jaakko, Lassila-Perini, Katri, Luukka, Panja, Nysten, Jukka, Tuominen, Eija, Tuovinen, Esa, Eremin, Vladimir, Ilyashenko, Igor, Ivanov, Alexander, Kalinina, Evgenia, Lebedev, Alexander, Strokan, Nikita, Verbitskaya, Elena, Barcz, Adam, Brzozowski, Andrzej, Kaminski, Pawel, Kozlowski, Roman, Kozubal, Michal, Luczynski, Zygmunt, Nossarzewska-Orlowska, Elzbieta, Surma, Barbara, Zabierowski, Piotr, Boer, Wim, Furgeri, Alex, Hartmann, Frank, Zhukov, Valery, Barabash, L., Dolgolenko, A., Groza, A., Karpenko, A., Khivrich, V., Lastovetsky, V., Litovchenko, P., Polivtsev, L., Brodbeck, Timothy John, Campbell, Duncan, Chilingarov, Alexandre, Hughes, Gareth, Jones, Brian Keith, Sloan, Terence, Koski, Miia, Leinonen, Kari, Palviainen, Tanja, Tuuva, Tuure, Allport, Philip, Biagi, Stephen, Bowcock, Themis J. V., Casse, Gianluigi, Vossebeld, Joost, Cindro, Vladimir, Dolenc, Irena, Kramberger, Gregor, Mandic, Igor, Mikuz, Marko, Zavrtanik, Marko, Assouak, Samia, Forton, Eric, Gregoire, Ghislain, Lemaitre, Vincent, Militaru, Otilia, Piotrzkowski, Krzysztof, Rodeghiero, Pierre, Kazuchits, Nikolai, Makarenko, Leonid, Charron, Sebastien, Genest, Marie-Helene, Houdayer, Alain, Lebel, Celine, Leroy, Claude, Golovin, Victor, Grigoriev, Eugene, Karpov, Aleksey, Kazakov, Sergey, Martemianov, Alexander, Rogozhkin, Sergey, Zaluzhny, Alexandre, Andricek, Ladislav, Moser, Hans-Gunther, Richter, Rainer Helmut, Wei, Qingyu, Gorelov, Igor, Hoeferkamp, Martin, Metcalfe, Jessica, Seidel, Sally, Vataga, Elena, Hartjes, Fred, Koffeman, Els, Graaf, Harry, Visschers, Jan, Alfieri, Giovanni, Johansen, Klaus M. H., Kuznetsov, Andrej, Monakhov, Edouard, Svensson, Bengt G., Bisello, Dario, Candelori, Andrea, Khomenkov, Vladimir, Litovchenko, Alexei, Pantano, Devis, Rando, Riccardo, Bilei, Gian Mario, Passeri, Daniele, Petasecca, Marco, Pignatel, Giorgio Umberto, Borrello, Laura, Dutta, Suchandra, Messineo, Alberto, Segneri, Gabriele, Popule, Jiri, Sicho, Petr, Tomasek, Michal, Vrba, Vaclav, Broz, Jan, Dolezal, Zdenek, Kodys, Peter, Tsvetkov, Alexej, Wilhelm, Ivan, Chren, Dominik, Horazdovsky, Tomas, Kohout, Zdenek, Linhart, Vladimir, Pospisil, Stanislav, Solar, Michael, Sopko, Vit, Sopko, Bruno, Uher, Josef, Horisberger, Roland, Rohe, Tilman, Bolla, Gino, Bortoletto, Daniela, Giolo, Kim, Miyamoto, Jun, Rott, Carsten, Roy, Amitava, Shipsey, Ian, Son, Seunghee, Boisvert, Veronique, Demina, Regina, Korjenevski, Sergey, Tipton, Paul, Grillo, Alexander, Sadrozinski, Hartmut, Schumm, Bruce, Seiden, Abraham, Spencer, Ned, Dawson, Ian, Dervan, Paul, Hansen, Thor-Erik, Artuso, Marina, Guskov, J., Marunko, Sergey, Ruzin, Arie, Tylchin, Tamir, Fizzotti, Franco, Garino, Yiuri, Lo Giudice, Alessandro, Manfredotti, Claudio, Boscardin, Maurizio, Dalla Betta, Gian Franco, Gregori, Paolo, Piemonte, Claudio, Pozza, Alberto, Ronchin, Sabina, Zen, Mario, Zorzi, Nicola, Garcia, Carmen, Gonzalez-Sevilla, Sergio, Lacasta, Carlos, Marti I Garcia, Salvador, Minano, Mercedes, Gaubas, Eugenijus, Kadys, Arunas, Kazukauskas, Vaidotas, Sakalauskas, Stanislavas, Storasta, Jurgis, and Vaitkus, Juozas Vidmantis

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