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Transformers, due to their ability to learn long range dependencies, have overcome the shortcomings of convolutional neural networks (CNNs) for global perspective learning. Therefore, they have gained the focus of researchers for several vision related tasks including medical diagnosis. However, their multi-head attention module only captures global level feature representations, which is insufficient for medical images. To address this issue, we propose a Channel Boosted Hybrid Vision Transformer (CB HVT) that uses transfer learning to generate boosted channels and employs both transformers and CNNs to analyse lymphocytes in histopathological images. The proposed CB HVT comprises five modules, including a channel generation module, channel exploitation module, channel merging module, region-aware module, and a detection and segmentation head, which work together to effectively identify lymphocytes. The channel generation module uses the idea of channel boosting through transfer learning to extract diverse channels from different auxiliary learners. In the CB HVT, these boosted channels are first concatenated and ranked using an attention mechanism in the channel exploitation module. A fusion block is then utilized in the channel merging module for a gradual and systematic merging of the diverse boosted channels to improve the network's learning representations. The CB HVT also employs a proposal network in its region aware module and a head to effectively identify objects, even in overlapping regions and with artifacts. We evaluated the proposed CB HVT on two publicly available datasets for lymphocyte assessment in histopathological images. The results show that CB HVT outperformed other state of the art detection models, and has good generalization ability, demonstrating its value as a tool for pathologists., Comment: IEEE Access (2023)

A review of the present status, recent enhancements, and applicability of the SIESTA program is presented. Since its debut in the mid-nineties, SIESTA's flexibility, efficiency and free distribution has given advanced materials simulation capabilities to many groups worldwide. The core methodological scheme of SIESTA combines finite-support pseudo-atomic orbitals as basis sets, norm-conserving pseudopotentials, and a real-space grid for the representation of charge density and potentials and the computation of their associated matrix elements. Here we describe the more recent implementations on top of that core scheme, which include: full spin-orbit interaction, non-repeated and multiple-contact ballistic electron transport, DFT+U and hybrid functionals, time-dependent DFT, novel reduced-scaling solvers, density-functional perturbation theory, efficient Van der Waals non-local density functionals, and enhanced molecular-dynamics options. In addition, a substantial effort has been made in enhancing interoperability and interfacing with other codes and utilities, such as Wannier90 and the second-principles modelling it can be used for, an AiiDA plugin for workflow automatization, interface to Lua for steering SIESTA runs, and various postprocessing utilities. SIESTA has also been engaged in the Electronic Structure Library effort from its inception, which has allowed the sharing of various low level libraries, as well as data standards and support for them, in particular the PSML definition and library for transferable pseudopotentials, and the interface to the ELSI library of solvers. Code sharing is made easier by the new open-source licensing model of the program. This review also presents examples of application of the capabilities of the code, as well as a view of on-going and future developments., Comment: 29 pages, 23 figures

The electronic stopping power of nickel-based equiatomic solid solutions alloys NiCr, NiFe and NiCo for protons and alpha projectiles is investigated in detail using real-time time-dependent density functional theory over a wide range of velocities. Recently developed numerical electronic structure methods are used to probe fundamental aspects of electron-ion coupling non-perturbatively and in a fully atomistic context, capturing the effect of the atomic scale disorder. The effects of particular electronic band structures and density of states reflect in the low velocity limit behavior. We compare our results for the alloys with those of a pure nickel target to understand how alloying affects the electronic stopping. We discover that NiCo and NiFe have similar stopping behavior as Ni while NiCr has an asymptotic stopping power that is more than a factor of two larger than its counterparts for velocities below 0.1 a.u.. We show that the low-velocity limit of electronic stopping power can be manipulated by controlling the broadening of the d-band through the chemical disorder. In this regime, the Bragg's additive rule for the stopping of composite materials also fails for NiCr., Comment: 9 pages, 7 figures

Electronic stopping power in the \(\mathrm{keV/\AA}\) range is accurately calculated from first principles. The energy loss to electrons in self-irradiated nickel, a paradigmatic transition metal, using real-time time-dependent density functional theory is studied. Different core states are explicitly included in the simulations to understand their involvement in the dissipation mechanism. The experimental data are well reproduced in the projectile velocity range of \(1.0 - 12.0~\mathrm{atomic~units}\). The core electrons of the projectile are found to open additional dissipation channels as the projectile velocity increases. Almost all of the energy loss is accounted for, even for high projectile velocities, when core electrons as deep as \(2s\) are explicitly treated. In addition to their expected excitation at high velocities, a flapping dynamical response of the core electrons is observed at intermediate projectile speeds.

The direction and impact parameter dependence of electronic stopping power, along with its velocity threshold behavior, is investigated in a prototypical small band gap semiconductor. We calculate the electronic stopping power of H in Ge, a semiconductor with relatively low packing density, using time-evolving time-dependent density-functional theory. The calculations are carried out in channeling conditions with different impact parameters and in different crystal directions, for projectile velocities ranging from 0.05 to 0.6 atomic units. The satisfactory comparison with available experiments supports the results and conclusions beyond experimental reach. The calculated electronic stopping power is found to be different in different crystal directions; however, strong impact parameter dependence is observed only in one of these directions. The distinct velocity threshold observed in experiments is well reproduced, and its non-trivial relation with the band gap follows a perturbation theory argument surprisingly well. This simple model is also successful in explaining why different density functionals give the same threshold even with substantially different band gaps., Comment: additional references and figures