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In this study, copper indium gallium sulfide (CuIn1-xGaxS2) films was deposited on glass substrates using ultrasonic spray pyrolysis technique (USP). The Ga/(In+ Ga) molar ratio in the precursor solutions has been tailored to obtain the stoichiometric films. Chalcopyrite structure of the films was confirmed by XRD analysis. High absorption coefficient values have been obtained for all samples. It has been observed that the optimum Ga/(In+ Ga) ratio in precursor was 0.5 for the best-performed CuInGaS2 thin films., Int Journal Renewable Energy Res, Comillas Pontif Univ, IEEE, IEEE Power Elect Soc, IEEE Ind Applicat Soc, IBERDROLA, KBSoftware, Asociac Ingenieros ICAI, IEEE Secc Espana, IEEE Spanish Power Elect Ind Elect Joint Chapter, Univ Deusto, iMS, bime, Fraunhofer, INESCTEC, Aalborg Univ, CARTIF, EiC, European Commiss ; Inst Elect Informat ; Commun Engineers Japan, Natl Assoc Spanish ICAI Engineers

In this study, copper indium gallium sulfide (CuIn1-xGaxS2) films was deposited on glass substrates using ultrasonic spray pyrolysis technique (USP). The Ga/(In+ Ga) molar ratio in the precursor solutions has been tailored to obtain the stoichiometric films. Chalcopyrite structure of the films was confirmed by XRD analysis. High absorption coefficient values have been obtained for all samples. It has been observed that the optimum Ga/(In+ Ga) ratio in precursor was 0.5 for the best-performed CuInGaS2 thin films., Int Journal Renewable Energy Res, Comillas Pontif Univ, IEEE, IEEE Power Elect Soc, IEEE Ind Applicat Soc, IBERDROLA, KBSoftware, Asociac Ingenieros ICAI, IEEE Secc Espana, IEEE Spanish Power Elect Ind Elect Joint Chapter, Univ Deusto, iMS, bime, Fraunhofer, INESCTEC, Aalborg Univ, CARTIF, EiC, European Commiss ; Inst Elect Informat ; Commun Engineers Japan, Natl Assoc Spanish ICAI Engineers

[No abstract available]

This chapter focuses on the fundamentals of the spray pyrolysis (SP) technology, the formation of oxide nano powders, nano rods and nanocrystalline thin films, and the performance/manufacturing condition relationships of these materials. Specific application areas such as photovoltaic, energy storage, and sensors will also be given in a subsection of the chapter. Moreover, our approach to building nanocrystalline chalcopyrite semiconductor thin films for photovoltaic applications is given. Chalcopyrite semiconductors are good alternatives to silicon-based photovoltaic devices because of their appropriate band gap energy, high absorption coefficient, and stability. Although selenium-based chalcopyrite materials have very high energy conversion efficiencies in photovoltaics, sulfur-based semiconductors have been quickly replacing them due to the non-toxicity of the sulfur-containing materials. This chapter gives information on the nanocrystalline thin-film deposition of both selenium- and sulfur-based chalcopyrite semiconductors via SP. Applications of these materials in the photovoltaic area are also discussed. Furthermore, our very recent work on the SP of copper-based photovoltaic devices on flexible substrates is summarized. Usage of flexible substrates, polymers, and metal foils, which combine the advantages of being very lightweight with mechanical robustness, is discussed. Therefore, spray-pyrolyzed materials can be used in flexible electronic applications or in the areas where the weight/volume ratio is crucial like unmanned air vehicles.

In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS2/In2S3/ZnO/AZO-Ag-AZO was studied as a function of the In2S3 buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 10(6) times. Electrical measurements under illumination revealed that short circuit current density (J(sc)), open circuit voltage (V-oc), fill factor (FF) and efficiency (eta) of the Mo/CuInS2/In2S3/ZnO/AZO-Ag-AZO type solar cells increased with increasing the thickness of the In2S3 layer. The maximum J(sc) of 9.20 mA/cm(2), V-oc of 0.43 V, FF of 0.44 have been observed for the 0.94 mu m-thick In2S3 layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed thin film solar cells. (C) 2015 Elsevier B.V. All rights reserved., Republic of Turkey Ministry of Science, Industry and TechnologyMinistry of Science, Industry ; Technology - Turkey [01072.STZ.2011-2], This study was supported by Republic of Turkey Ministry of Science, Industry and Technology under the research Grant 01072.STZ.2011-2.

In this study, copper based thin film solar cells with substrate structure have been built via spray pyrolysis method. Toxic material usage was avoided during the material deposition and the post-treatment steps. Novel device configuration of Mo/CuInS2/In2S3/ZnO/AZO-Ag-AZO was studied as a function of the In2S3 buffer layer thickness. In order to utilize the zinc oxide (ZnO) and aluminum doped zinc oxide (AZO) transparent conductive layers, deposited by physical vapor deposition (PVD), on top of the spray pyrolyzed thin films, the RF power was lowered to 30 W. Although this minimized the unwanted penetration of the highly energetic particles, created during PVD process, sheet resistivity of the AZO films increased enormously. Hence very thin silver layer has been deposited between two AZO films. This resulted the decrease in the sheet resistivity more than 10(6) times. Electrical measurements under illumination revealed that short circuit current density (J(sc)), open circuit voltage (V-oc), fill factor (FF) and efficiency (eta) of the Mo/CuInS2/In2S3/ZnO/AZO-Ag-AZO type solar cells increased with increasing the thickness of the In2S3 layer. The maximum J(sc) of 9.20 mA/cm(2), V-oc of 0.43 V, FF of 0.44 have been observed for the 0.94 mu m-thick In2S3 layer. Extraordinarily thick buffer layer provided better diffusion barrier between the absorber and the TCO layers and also resulted better photosensitivity. These could be the key factors to produce substrate configuration of the spray pyrolyzed thin film solar cells. (C) 2015 Elsevier B.V. All rights reserved., Republic of Turkey Ministry of Science, Industry and TechnologyMinistry of Science, Industry ; Technology - Turkey [01072.STZ.2011-2], This study was supported by Republic of Turkey Ministry of Science, Industry and Technology under the research Grant 01072.STZ.2011-2.

Yüksek verimli bükülebilir ince film güneş pilleri düşük maliyetli ve uzun vadede istikrarlı olmaları ile fotovoltaik uygulamalarda öne çıkmaktadır. Sprey piroliz yöntemi ile Cu-tabanlı ince film güneş gözeleri cam alttaşlar üzerine üretilmektedir. Böylece atmosferik ortamda düşük maliyetli kaplama olanağı sağlanabilir. Bu tez kapsamında üretilen güneş gözelerinde CuInS2/In2S3 heteroeklemleri sprey piroliz yöntemiyle üretilmiştir. Upilex® ve paslanmaz çelik folyolar bükülebilir alttaşlar olarak seçilmiş ve arka kontak optimizasyonu yapılmıştır. Mo arka kontaklar mikrodalga ve atmosferik plazma yöntemleriyle yüzeyleri modifiye edilen Upilex® alttaşlara kaplanmıştır. Monolitik entegre güneş pillerinde akım kayıplarını azaltmak için P1, P2 ve P3 kazıma işlemleri uygulanmaktadır. Bu doğrultuda cam ve poliimit alttaşlar kullanılarak P1 kazıma işlemleri ns ve fs atımlı fiber lazerlerle çalışılmıştır. Paslanmaz çelik folyolar kullanıldığında proses veya tavlama/iyileştirme işlemleri sırasında alttaşlardan soğurucu tabakaya Fe ve/veya safsızlık atomlarının difüzyonunun olduğu bilinmektedir. Fe difüzyonunu engellemek/azaltmak için arka kontak ile çelik folyo arasına bariyer tabaka kaplanmalıdır. Seçilen alümina filmler 1010 ?.cm civarındaki dirençleri ve amorf yapılarıyla Fe difüzyonunu azaltmakla birlikte monolitik entegrasyonda gerekli olan P1 kazıma işlemi için yalıtkanlığı da sağlamış olmaktadır. Belirlenen alümina filmler için farklı tavlama işlemleri çalışılmıştır. Ayrıca geçirgen iletken oksitlerin sülfürizasyon/selenizasyon olmadan sprey piroliz yöntemiyle üretilen güneş gözeleri optimize edilmiştir. Düşük RF saçtırma güçleri ile üretilen AZO/metal/AZO yapılar farklı metal ara tabakalar ile birlikte çalışılmış ve yaklaşık 110nm kalınlığa sahip AZO/Ag/AZO yapılar yüksek performans göstermiştir. Sonuç olarak bükülebilir güneş gözeleri için arka kontaklar ve geçirgen elektrotlar bu çalışma kapsamında optimize edilmiştir., High conversion efficiency, long term stability, low production costs are among the critical issues in the photovoltaic technology. Spray pyrolyzed flexible Cu-based photovoltaics have great opportunities for fulfilling these requirements. In this thesis, CuInS2/In2S3 heterojunction thin film solar cells have been fabricated on flexible substrates -Upilex® and stainless steel foil substrates- by spray pyrolysis technique. MW and atmospheric plasma treatments have been studied systematically before deposition of Mo back contacts. In order to derive large area solar cells without heavy efficiency losses, critical P1, P2 and P3 scribing processes are essential for structuring the photovoltaic cells. With this motivation, P1 scribing processes have been studied systematically using ns and fs fiber lasers. In the case of stainless steel foils, the deposition of barrier layers is required in order to prevent diffusion of iron and other undesired metal atoms. Al2O3 is preferred as a barrier layer due to its unique properties among others. Effects of the barrier layer thickness and thermal annealing processes on the performance of solar devices have been studied. Moreover a novel structure very thin TCO layers -AZO/metal/AZO structure- has been designed for spray pyrolyzed CuInS2/In2S3 heterojunctions. Various types of metals have been studied in AZO/metal/AZO structure to investigate the effect of material selection on TCO quality and device performance. As a result, design and optimization of back contacts and transparent electrodes was performed and effect of processing conditions on both rigid on flexible substrates analyzed deeply.