1. Pore formation on p-type InP(100)
- Author
-
U. Schlierf, David J. Lockwood, M. J. Graham, and Patrik Schmuki
- Subjects
Materials science ,Anodizing ,Inorganic chemistry ,Surfaces and Interfaces ,Electrolyte ,Condensed Matter Physics ,Microstructure ,Electrochemistry ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Electropolishing ,Surface coating ,chemistry.chemical_compound ,chemistry ,Materials Chemistry ,Hydrobromic acid ,Electrical and Electronic Engineering ,Porous medium - Abstract
The present work deals with anodization processes of p-type InP(100) in different halogenic acids. The morphology of the attack depends strongly on the electrochemical conditions and the type of anion present in the electrolyte. Only electropolishing was observed in HCl while the formation of a porous oxide layer was obtained in HF. In HBr, however, pore growth into the bulk material can be achieved.
- Published
- 2005