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Quantum circuits interact with the environment via several temperature-dependent degrees of freedom. Yet, multiple experiments to-date have shown that most properties of superconducting devices appear to plateau out at $T\approx 50$ mK -- far above the refrigerator base temperature. This is for example reflected in the thermal state population of qubits, in excess numbers of quasiparticles, and polarisation of surface spins -- factors contributing to reduced coherence. We demonstrate how to remove this thermal constraint by operating a circuit immersed in liquid $^3$He. This allows to efficiently cool the decohering environment of a superconducting resonator, and we see a continuous change in measured physical quantities down to previously unexplored sub-mK temperatures. The $^3$He acts as a heat sink which increases the energy relaxation rate of the quantum bath coupled to the circuit a thousand times, yet the suppressed bath does not introduce additional circuit losses or noise. Such quantum bath suppression can reduce decoherence in quantum circuits and opens a route for both thermal and coherence management in quantum processors.

A major issue for the implementation of large scale superconducting quantum circuits is the interaction with interfacial two-level system defects (TLS) that leads to qubit relaxation and impedes qubit operation in certain frequency ranges that also drift in time. Another major challenge comes from non-equilibrium quasiparticles (QPs) that result in qubit dephasing and relaxation. In this work we show that such QPs can also serve as a source of TLS. Using spectral and temporal mapping of TLS-induced fluctuations in frequency tunable resonators, we identify a subset of the general TLS population that are highly coherent TLS with a low reconfiguration temperature $\sim$ 300 mK, and a non-uniform density of states. These properties can be understood if these TLS are formed by QPs trapped in shallow subgap states formed by spatial fluctutations of the superconducting order parameter $\Delta$. Magnetic field measurements of one such TLS reveals a link to superconductivity. Our results imply that trapped QPs can induce qubit relaxation., Comment: 7 pages, 4 figures, plus 18 pages, 13 figures supplemental

We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 {\deg}C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate tunable ambipolar transport across the Dirac point, and n- or p-type doping depending on the Au content.

Graphene has shown great potential for modulating infrared (IR) light in devices as small as 350 nm. At these length scales, nanoscale features of devices, and their interaction with light, can be expected to play a significant role in device performance. Bubbles in van der Waals heterostructures are one such feature, which have recently attracted considerable attention thanks to their ability to modify the optoelectronic properties of 2D materials through strain. Here we use scattering-type scanning near-field optical microscopy (sSNOM) to measure the nanoscale IR response from a network of variously shaped bubbles in hexagonal boron nitride (hBN)-encapsulated graphene. We show that within individual bubbles there are distinct domains with strongly enhanced IR absorption. We correlate this with strain in the graphene, found with confocal Raman microscopy and vector decomposition analysis. This reveals intricate and varied strain configurations, in which bubbles of different shape induce more bi- or uniaxial strain configurations. Ridges in the bubbles, seen by atomic force microscopy (AFM), coincide with the domain boundaries, which leads us to attribute the domains to nanoscale strain differences in the graphene. This reveals pathways towards future strain-based graphene IR devices.

Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene., Comment: 4 Figures, 1 Table

Noise and decoherence due to spurious two-level systems (TLS) located at material interfaces is a long-standing issue in solid state quantum technologies. Efforts to mitigate the effects of TLS have been hampered by a lack of surface analysis tools sensitive enough to identify their chemical and physical nature. Here we measure the dielectric loss, frequency noise and electron spin resonance (ESR) spectrum in superconducting resonators and demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the frequency noise. We provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and demonstrates their coupling via the electric-field degree of freedom to the resonator, causing dielectric (charge) noise in solid state quantum devices., Comment: 13 pages, 11 figures

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder.

It is universally accepted that noise and decoherence affecting the performance of superconducting quantum circuits are consistent with the presence of spurious two-level systems (TLS). In recent years bulk defects have been generally ruled out as the dominant source, and the search has focused on surfaces and interfaces. Despite a wide range of theoretical models and experimental efforts, the origin of these surface TLS still remains largely unknown, making further mitigation of TLS induced decoherence extremely challenging. Here we use a recently developed on-chip electron spin resonance (ESR) technique that allows us to detect spins with a very low surface coverage. We combine this technique with various surface treatments specifically to reveal the nature of native surface spins on Al$_2$O$_3$ -- the mainstay of almost all solid state quantum devices. On a large number of samples we resolve three ESR peaks with the measured total paramagnetic spin density $n=2.2\times 10^{17}$m$^{-2}$, which matches the density inferred from the flux noise in SQUIDs. We show that two of these peaks originate from physisorbed atomic hydrogen which appears on the surface as a by-product of water dissociation. We suggest that the third peak is due to molecular oxygen on the Al$_2$O$_3$ surface captured at strong Lewis base defect sites, producing charged O$_2^-$. These results provide important information towards the origin of charge and flux noise in quantum circuits. Our findings open up a whole new approach to identification and controlled reduction of paramagnetic sources of noise in solid state quantum devices., Comment: 6 pages, 2 figures (supplementary material 6 pages, 6 figures)

Interfacing rare-earth doped crystals with superconducting circuit architectures provides an attractive platform for quantum memory and transducer devices. Here we present the detailed characterization of such a hybrid system: a locally implanted rare-earth Gd$^{3+}$ in Al$_2$O$_3$ spin system coupled to a superconducting micro-resonator. We investigate the properties of the implanted spin system through angular dependent micro-resonator electron spin resonance (micro-ESR) spectroscopy. We find, despite the high energy near-surface implantation, the resulting micro-ESR spectra to be in excellent agreement with the modelled Hamiltonian, supporting the integration of dopant ions into their relevant lattice sites whilst maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our micro-resonator, emphasising the need for controllable local implantation., Comment: 6 pages, 3 figures

We demonstrate quantum Hall resistance measurements with metrological accuracy in a small cryogen-free system operating at a temperature of around 3.8K and magnetic fields below 5T. Operating this system requires little experimental knowledge or laboratory infrastructure, thereby greatly advancing the proliferation of primary quantum standards for precision electrical metrology. This significant advance in technology has come about as a result of the unique properties of epitaxial graphene on SiC., Comment: 15 pages, 9 figures

Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localisation analysis, is suppressed by an in-plane magnetic field, $B_{\parallel}$, and thereby proving that it is caused at least in part by spinful scatterers. A non-monotonic dependence of effective decoherence rate on $B_{\parallel}$ reveals the intricate role of scatterers' spin dynamics in forming the interference correction to conductivity, an effect that has gone unnoticed in earlier weak localisation studies

We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magneto-transport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2 $\sim$ 31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be $3.0 \sim 9.1 \times 10^{10}$ cm$^{-2}$ for our samples. An asymmetry in the electron/hole scattering is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder potential, in good agreement with quantum-mechanical numerical calculations., Comment: 6 pages, 3 figures

Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Gr\"uneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence $n_e^{-1.5}$ in the scaling of the $T^4$ power law is observed in bilayer graphene, in contrast to the $n_e^{-0.5}$ dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems., Comment: 9 pages, 8 figures

We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above $10^{5}$. Using microwave absorption spectroscopy we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of $1$ MHz and spin linewidths of $50 - 65$ MHz., Comment: 4 pages, 2 Figures

We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe., Comment: 5 pages, 5 figures

Here we find the increase in 1/f noise of superconducting resonators at low temperatures to be completely incompatible with the standard tunneling model (STM) of Two Level Systems (TLS), which has been used to describe low-frequency noise for over three decades. We revise the STM to include a significant TLS - TLS interaction. The new model is able to explain the temperature and power dependence of noise in our measurements, as well as recent studies of individual TLS lifetimes using superconducting qubits. The measurements were made possible by implementing an ultra-stable frequency-tracking technique used in atomic clocks and by producing a superconducting resonator insensitive to temperature fluctuations. The latter required an epitaxially grown Nb film with a Pt capping layer to minimize detrimental oxides at all interfaces., Comment: 7 pages, 3 figures

Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyse the dependence of the scattering lengths L$_\varphi$, L$_i$, and L$_*$ on carrier density. We find no significant carrier dependence for L$_\varphi$, a weak decrease for L$_i$ with increasing carrier density just beyond a large standard error, and a n$^{-\frac{1}{4}}$ dependence for L$_*$. We demonstrate that currents as low as 0.01\,nA are required in smaller devices to avoid hot-electron artefacts in measurements of the quantum corrections to conductivity.

We compare the three most commonly used scanning probe techniques to obtain a reliable value of the work function in graphene domains of different thickness. The surface potential (SP) of graphene is directly measured in Hall bar geometry via a combination of electrical functional microscopy and spectroscopy techniques, which enables calibrated work function measurements of graphene domains with values ~4.55+/-0.02 eV and ~4.44+/-0.02eV for single- and bi-layer, respectively. We demonstrate that frequency-modulated Kelvin probe force microscopy (FM-KPFM) provides more accurate measurement of the SP than amplitude-modulated (AM)-KPFM. The discrepancy between experimental results obtained by different techniques is discussed. In addition, we use FM-KPFM for contactless measurements of the specific components of the device resistance. We show a strong non-Ohmic behavior of the electrode-graphene contact resistance and extract the graphene channel resistivity.

We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($\rho_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $\nu=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density.

In this paper we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also brie y discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally we discuss other possible applications of graphene in metrology., Comment: arXiv admin note: substantial text overlap with arXiv:1202.2985

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples., Comment: 8 figs PRB in press

Slow noise processes, with characteristic timescales ~1s, have been studied in planar superconducting resonators. A frequency locked loop is employed to track deviations of the resonator centre frequency with high precision and bandwidth. Comparative measurements are made in varying microwave drive, temperature and between bare resonators and those with an additional dielectric layer. All resonators are found to exhibit flicker frequency noise which increases with decreasing microwave drive. We also show that an increase in temperature results in a saturation of flicker noise in resonators with an additional dielectric layer, while bare resonators stop exhibiting flicker noise instead showing a random frequency walk process., Comment: 4 pages, 2 figures, version 4 http://prb.aps.org/abstract/PRB/v87/i14/e140501

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.

We present a new application and implementation of the so-called Pound locking technique for the interrogation of superconducting microresonators. We discuss how by comparing against stable frequency sources this technique can be used to characterize properties of resonators that can not be accessed using traditional methods. Specifically, by analyzing the noise spectra and the Allan deviation we obtain valuable information about the nature of the noise in superconducting planar resonators. This technique also greatly improves the read-out accuracy and measurement throughput compared to conventional methods., Comment: 5 pages

The Syst\`eme Internationale d'unit\'es (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference of the quantized resistance value within the relative standard uncertainty of our measurement of 8.6\times10-11, being the most stringent test of the universality of the quantum Hall effect in terms of material independence.

Electronic devices using epitaxial graphene on Silicon Carbide require encapsulation to avoid uncontrolled doping by impurities deposited in ambient conditions. Additionally, interaction of the graphene monolayer with the substrate causes relatively high level of electron doping in this material, which is rather difficult to change by electrostatic gating alone. Here we describe one solution to these problems, allowing both encapsulation and control of the carrier concentration in a wide range. We describe a novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers: a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. Unexposed, the same double layer of polymers works well as capping material, improving the temporal stability and uniformity of the doping level of the sample. By UV exposure of this heterostructure we controlled electrical parameters of graphene in a non-invasive, non-volatile, and reversible way, changing the carrier concentration by a factor of 50. The electronic properties of the exposed SiC/ graphene/polymer heterostructures remained stable over many days at room temperature, but heating the polymers above the glass transition reversed the effect of light. The newly developed photochemical gating has already helped us to improve the robustness (large range of quantizing magnetic field, substantially higher opera- tion temperature and significantly enhanced signal-to-noise ratio due to significantly increased breakdown current) of a graphene resistance standard to such a level that it starts to compete favorably with mature semiconductor heterostructure standards. [2,3], Comment: Published online in "Advanced Materials", 7 Jan 2011. Category cond-mat.mes-hall

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements.

We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyse the responsivity of graphene to the density variation by means of electrostatic gates., Comment: 3 pages; submitted to APL

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics., Comment: Submitted

Planar superconducting resonators are now being increasingly used at mK temperatures in a number of novel applications. They are also interesting devices in their own right since they allow us to probe the properties of both the superconductor and its environment. We have experimentally investigated three types of niobium resonators - including a lumped element design - fabricated on sapphire and SiO_2/Si substrates. They all exhibit a non-trivial temperature dependence of their centre frequency and quality factor. Our results shed new light on the interaction between the electromagnetic waves in the resonator and two-level fluctuators in the substrate., Comment: V2 includes some minor corrections/changes. Submitted to PRB

We describe measurements on microwave coplanar resonators designed for quantum bit experiments. Resonators have been patterned onto sapphire and silicon substrates, and quality factors in excess of a million have been observed. The resonant frequency shows a high sensitivity to magnetic field applied perpendicular to the plane of the film, with a quadratic dependence for the fundamental, second and third harmonics. Frequency shift of hundreds of linewidths can be obtained., Comment: Accepted for publication in APL

We propose a scheme for circuit quantum electrodynamics with a superconducting flux-qubit coupled to a high-Q coplanar resonator. Assuming realistic circuit parameters we predict that it is possible to reach the strong coupling regime. Routes to metrological applications, such as single photon generation and quantum non-demolition measurements are discussed., Comment: 8 pages, 5 figures

The effect of thermal coupling on spin avalanches in Mn12-acetate has been probed using a single crystal assembly. Time-resolved, synchronized measurements of magnetization and temperature are reported. Unusually low avalanche trigger fields occur when thermal coupling to the bath is weak. A temperature rise observed at zero magnetic field is attributed to a change in magnetostatic energy., Comment: 5 pages, 3 figures; v2 shortened for publication

We report measurements of the flux hysteresis curves and trapped flux distribution in an YBa2Cu3O7 r.f. SQUID containing two closely spaced grain boundary Josephson junctions in parallel. Broadening of the flux distribution from T = 15 K to 30 K is followed by a bifurcation at T = 35 K which corresponds to a degenerate ground state. Above T ~ 40 K the bifurcation disappears, the flux distribution narrows significantly and small secondary loops appear in the hysteresis curves. This behaviour can be modelled qualitatively if we assume a temperature dependent second harmonic term in the current-phase relationship of the junctions., Comment: 10 pages, 7 figures

We report on design and fabrication of a new type of flux qubit that capitalizes on intrinsic properties of submicron YBCO grain boundary junctions. The operating point is protected from the fluctuations of the external fields, already on the classical level; the effects of external perturbations are absent, to the second or third order, depending on the character of the coupling. We propose an experiment to observe quantum tunneling and Rabi oscillations in the qubit. Estimate of the decoherence due to fluctuations of the external flux is presented., Comment: 3 pages, 3 figures

The predominant d-wave pairing symmetry in high temperature superconductors allows for a variety of current-phase relations in Josephson junctions, which is to a certain degree fabrication controlled. In this letter we report on direct experimental observations of the effects of a non-sinusoidal current-phase dependence in YBCO dc-SQUIDs, which agree with the theoretical description of the system., Comment: 4 pages, 4 ps figures, to apprear in Phys. Rev. Lett