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7. High electron mobility in AlN:Si by point and extended defect management.

11. High conductivity in Ge-doped AlN achieved by a non-equilibrium process

15. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

26. Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

27. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

29. The role of chemical potential in compensation control in Si:AlGaN.

30. Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

32. UVC optoelectronics based on AlGaN on AlN single crystal substrates

33. Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials

36. Design of AlGaN-based quantum structures for low threshold UVC lasers.

37. Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

38. Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates.

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