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We report on a double moir\'e system consisting of four graphene layers, where the top and bottom pairs form small-twist-angle bilayer graphene, and the middle interface has a large rotational mismatch. This system shows clear signatures of two sets of spatially separated flat bands associated with the top and bottom twisted bilayer graphene (TBG) subsystems, each independently tunable. Thermodynamic analysis reveals weak correlations between layers that allow the chemical potential to be measured as a function of carrier density for each constituent TBG. We find that correlated insulating states at integer number of electrons per moir\'e unit cell are most robust near magic angle, whereas gapped states at neutrality are more robust at larger twist angles., Comment: 6 pages, 4 figures, includes supplemental material

When mobile impurities are introduced and coupled to a Fermi sea, new quasiparticles known as Fermi polarons are formed. There are two interesting, yet drastically different regimes of the Fermi polaron problem: (I) the attractive polaron (AP) branch, connected to pairing phenomena spanning the crossover from BCS superfluidity to the Bose-Einstein condensation of molecules; and (II) the repulsive branch (RP), which underlies the physics responsible for Stoner's itinerant ferromagnetism. Here, we study Fermi polarons in two dimensional systems, where many questions and debates regarding their nature persist. The model system we investigate is a doped MoSe$_2$ monolayer. We find the observed AP-RP energy splitting and the quantum dynamics of attractive polarons agree with the predictions of polaron theory. As the doping density increases, the quantum dephasing of the attractive polarons remains constant, indicative of stable quasiparticles, while the repulsive polaron dephasing rate increases nearly quadratically. The dynamics of Fermi polarons are of critical importance for understanding the pairing and magnetic instabilities that lead to the formation of rich quantum phases found in a wide range of physical systems including nuclei, cold atomic gases, and solids., Comment: 7 pages, 4 figures

We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($\nu_{\mathrm{T}}$) and bottom ($\nu_{\mathrm{B}}$) layer filling factors are near $\nu_{\mathrm{T}}=\pm1/2, \pm3/2$ and $\nu_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $\nu = \pm1$ or $\pm3$. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute in revealing interlayer coherence using tunneling., Comment: 5 pages, 4 figures, includes supplementary material

Recently, alternating twist multilayer graphene (ATMG) has emerged as a family of moir\'e systems that share several fundamental properties with twisted bilayer graphene, and are expected to host similarly strong electron-electron interactions near the magic angle. Here, we study alternating twist quadrilayer graphene (ATQG) samples with twist angles of 1.96{\deg} and 1.52{\deg}, which are slightly removed from the magic angle of 1.68{\deg}. At the larger angle, we find signatures of correlated insulators only when the ATQG is hole doped, and no signatures of superconductivity, and for the smaller angle we find evidence of superconductivity, while signs of the correlated insulators weaken. Our results provide insight into the twist angle dependence of correlated phases in ATMG and shed light on the nature of correlations in the intermediate coupling regime at the edge of the magic angle range where dispersion and interaction are of the same order.

We describe a tunneling spectroscopy technique in a double bilayer graphene heterostructure where momentum-conserving tunneling between different energy bands serves as an energy filter for the tunneling carriers, and allows a measurement of the quasi-particle state broadening at well defined energies. The broadening increases linearly with the excited state energy with respect to the Fermi level, and is weakly dependent on temperature. In-plane magnetotunneling reveals a high degree of rotational alignment between the graphene bilayers, and an absence of momentum randomizing processes., Comment: 5 pages, 5 figures

The emergence of controlled, two-dimensional moir\'e materials has uncovered a new platform for investigating topological physics. Twisted double bilayer graphene (TDBG) has been predicted to host a topologically non-trivial gapped phase with Chern number equal to two at charge neutrality, when half the flat bands are filled. However, it can be difficult to diagnose topological states using a single measurement because it is ideal to probe the bulk and edge properties at the same time. Here, we report a combination of chemical potential measurements, transport measurements, and theoretical calculations that show that twisted double bilayer graphene can host metallic edge transport while simultaneously being insulating in the bulk. A Landauer-Buttiker analysis of measurements on multi-terminal samples allows us to quantitatively assess edge state scattering. We interpret these results as signatures of the predicted topological phase at charge neutrality.

Theoretical calculations show that twisted double bilayer graphene (TDBG) under a transverse electric field develops a valley Chern number 2 at charge neutrality. Using thermodynamic and thermal activation measurements we report the experimental observation of a universal closing of the charge neutrality gap in the Hofstadter spectrum of TDBG at 1/2 magnetic flux per unit cell, in agreement with theoretical predictions for a valley Chern number 2 gap. Our theoretical analysis of the experimental data shows that the interaction energy, while larger than the flat-band bandwidth in TDBG near 1\deg does not alter the emergent valley symmetry or the single-particle band topology., Comment: 6 pages, 4 figures, includes supplemental material

The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of flat bands with localized states and enhanced electronic correlations. In transition metal dichalcogenides, flat bands have been theoretically predicted to occur for long moir\'e wavelengths over a range of twist angles around 0 and 60 degrees giving much wider versatility than magic angle twisted bilayer graphene. Here we show the existence of a flat band in the electronic structure of 3{\deg} and 57.5{\deg} twisted bilayer WSe2 samples using scanning tunneling spectroscopy. Direct spatial mapping of wavefunctions at the flat band energy have shown that the flat bands are localized differently for 3{\deg} and 57.5{\deg}, in excellent agreement with first-principle density functional theory calculations., Comment: 15 pages, 4 figures. Added data for 57 degree twist angle sample

We present a combined experimental and theoretical study of twisted double bilayer graphene with twist angles between 1{\deg} and 1.35{\deg}. Consistent with moir\'e band structure calculations, we observe insulators at integer moir\'e band fillings one and three, but not two. An applied transverse electric field separates the first moir\'e conduction band from neighbouring bands, and favors the appearance of correlated insulators at 1/4, 1/2, and 3/4 band filling. Insulating states at 1/4 and 3/4 band filling emerge only in a parallel magnetic field (B_{||}), whereas the resistance at half band filling is weakly dependent on B_{||}. These findings suggest that correlated insulators are favored when a moir\'e flat band is spectrally isolated, with spin polarization at 1/4 and 3/4 band filling and valley polarization at 1/2 band filling., Comment: 5 pages, 4 figures, includes supplementary material

Josephson junction field effect transistors (JJ-FET) share design similarities with metal-oxide-semiconductor field effect transistors, except for the source/drain contacts being replaced by superconductors. Similarly, the super current due to proximity effect is tunable by the gate voltage. In this study, we examine the feasibility of JJ-FET-based Boolean logic and memory elements for cryogenic computing, in light of recent advances in novel materials and fabrication techniques. Using a two-dimensional ballistic transport JJ-FET model, we implement circuit level simulations for JJ-FET logic gates, and discuss criteria for realizing signal restoration, as well as fanout. We show that the JJ-FET is a promising candidate for very low power, clocked voltage-level dynamic logic at cryogenic temperatures., Comment: 7 pages, 9 figures

A strong low-temperature enhancement of the tunneling conductance between graphene bilayers has been reported recently, and interpreted as a signature of equilibrium electron-hole pairing, first predicted in bilayers more than forty years ago but previously unobserved. Here we provide a detailed theory of conductance enhanced by fluctuating electron-hole Cooper pairs, which are a precursor to equilibrium pairing, that accounts for specific details of the multi-band double graphene bilayer system which supports several different pairing channels. Above the equilibrium condensation temperature, pairs have finite temporal coherence and do not support dissipationless tunneling. Instead, they strongly boost the tunneling conductivity via a fluctuational internal Josephson effect. Our theory makes predictions for the dependence of the zero bias peak in the differential tunneling conductance on temperature and electron-hole density imbalance that capture important aspects of the experimental observations. In our interpretation of the observations, cleaner samples with longer disorder scattering times would condense at temperatures $T_c$ up to $\sim 50 {\rm K}$, compared to the record $T_c \sim 1.5 $K achieved to date in the experiment., Comment: 19 pages, 11 figures. Extended version accepted to Physical Review B

Two-dimensional semiconductors have emerged as a new class of materials for nanophotonics for their strong exciton-photon interaction and flexibility for engineering and integration. Taking advantage of these properties, we engineer an efficient lasing medium based on dipolar interlayer excitons, in rotationally aligned atomically thin heterostructures. Lasing is measured from a transition metal dichalcogenide hetero-bilayer integrated in a silicon nitride grating resonator. A sharp increase in the spatial coherence of the emission was observed across the lasing threshold. The work establishes interlayer excitons in two-dimensional heterostructures as a silicon-compatible coherent medium. With electrically tunable light-matter interaction strength and long-range dipolar interactions, these interlayer excitons promise both applications to low-power, ultrafast laser and modulators and rich many-body quantum phenomena.

Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley electron-hole exchange. Hetero-bilayer crystals have been shown to have a longer exciton lifetime and valley depolarization time. But the reported valley polarization was low; the valley selection rules and mechanisms of valley depolarization remains controversial. Here, we report singlet and brightened triplet interlayer excitons both with over 80% valley polarizations, cross- and co-polarized with the pump laser, respectively. This is achieved in WSe2/MoSe2 hetero-bilayers with precise momentum valley alignment and narrow emission linewidth. The high valley polarizations allow us to identify the band minima in a hetero-structure and con_rm unambiguously the direct band-gap exciton transition, ultrafast charge separation, strongly suppressed valley depolarization. Our results pave the way for using semiconductor heterobilayers to control valley selection rules for valleytronic applications.

We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias, which stem from energy- and momentum-conserving tunneling. Because the spin-orbit coupling leads to coupled spin-valley degrees of freedom, the twist between the two WSe2 monolayers allows us to probe the conservation of spin-valley degree of freedom in tunneling. In heterostructures where the two WSe2 monolayers have a 180{\deg} relative twist, such that the Brillouin zone of one layer is aligned with the time-reversed Brillouin zone of the opposite layer, the resonant tunneling between the layers is suppressed. These findings provide evidence that in addition to momentum, the spin-valley degree of freedom is also conserved in vertical transport., Comment: 5 figures, includes supporting information

In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moir\'e superlattice. While it is widely recognized that a moir\'e superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moir\'e potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moir\'e potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.

We show that moir\'e bands of twisted homobilayers can be topologically nontrivial, and illustrate the tendency by studying valence band states in $\pm K$ valleys of twisted bilayer transition metal dichalcogenides, in particular, bilayer MoTe$_2$. Because of the large spin-orbit splitting at the monolayer valence band maxima, the low energy valence states of the twisted bilayer MoTe$_2$ at $+K$ ($-K$) valley can be described using a two-band model with a layer-pseudospin magnetic field $\boldsymbol{\Delta}(\boldsymbol{r})$ that has the moir\'e period. We show that $\boldsymbol{\Delta}(\boldsymbol{r})$ has a topologically non-trivial skyrmion lattice texture in real space, and that the topmost moir\'e valence bands provide a realization of the Kane-Mele quantum spin-Hall model, i.e., the two-dimensional time-reversal-invariant topological insulator. Because the bands narrow at small twist angles, a rich set of broken symmetry insulating states can occur at integer numbers of electrons per moir\'e cell., Comment: 5+5 pages, 4+4 figures. Title has been modified. Accepted by Physical Review Letters on February 7, 2019

We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, consistent with an out-of-plane spin orientation of electrons at the $K$-point. We attribute the FFs parity transitions to an interaction enhancement of the Zeeman energy as the density is reduced, resulting in an increased Zeeman-to-cyclotron energy ratio., Comment: 5 pages, 5 figures; includes supplemental material

Flexible long period moir\' e superlattices form in two-dimensional van der Waals crystals containing layers that differ slightly in lattice constant or orientation. In this Letter we show theoretically that isolated flat moir\' e bands described by generalized triangular lattice Hubbard models are present in twisted transition metal dichalcogenide heterobilayers. The hopping and interaction strength parameters of the Hubbard model can be tuned by varying the twist angle and the three-dimensional dielectric environment. When the flat moir\'e bands are partially filled, candidate many-body ground states at some special filling factors include spin-liquid states, quantum anomalous Hall insulators and chiral $d$-wave superconductors., Comment: 5+2 pages, 4+1 figures

We report the experimental observation of strongly enhanced tunneling between graphene bilayers through a WSe$_2$ barrier when the graphene bilayers are populated with carriers of opposite polarity and equal density. The enhanced tunneling increases sharply in strength with decreasing temperature, and the tunneling current exhibits a vertical onset as a function of interlayer voltage at a temperature of 1.5 K. The strongly enhanced tunneling at overall neutrality departs markedly from single-particle model calculations that otherwise match the measured tunneling current-voltage characteristics well, and suggests the emergence of a many-body state with condensed interbilayer excitons when electrons and holes of equal densities populate the two layers., Comment: 5 pages, 5 figures, two supplementary figures

In minimally twisted bilayer graphene, a moir{\'e} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge states when the AB and BA regions are gapped. We fabricate designer moir{\'e} crystals with wavelengths longer than 50 nm and demonstrate the emergence of TPH states on the domain wall network by scanning tunneling spectroscopy measurements. We observe a double-line profile of the TPH states on the domain walls, only occurring when the AB and BA regions are gapped. Our results demonstrate a practical and flexible method for TPH state network construction., Comment: 12 pages, 4 figures

We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe$_2$. Shubnikov$-$de Haas oscillations show that trilayer holes populate two distinct subbands associated with the $K$ and $\Gamma$ valleys, with effective masses 0.5$m_e$ and $1.2m_e$, respectively; $m_e$ is the bare electron mass. At a fixed total hole density, an applied transverse electric field transfers holes from $\Gamma$ orbitals to $K$ orbitals. We are able to explain this behavior in terms of the larger layer polarizability of the $K$ orbital subband., Comment: 5 pages, 4 figures, includes supplementary material

Semiconductor microcavity polaritons, formed via strong exciton-photon coupling, provide a quantum many-body system on a chip, featuring rich physics phenomena for better photonic technology. However, conventional polariton cavities are bulky, difficult to integrate, and inflexible for mode control, especially for room temperature materials. Here we demonstrate sub-wavelength thick one-dimensional photonic crystals (PCs) as a designable, compact and practical platform for strong coupling with atomically thin van der Waals Crystals (vdWCs). Polariton dispersions and mode anti-crossings are measured up to room temperature. Non-radiative decay to dark excitons was suppressed due to polariton enhancement of the radiative decay. Unusual features, including highly anisotropic dispersions and adjustable Fano resonances in reflectance, may facilitate high temperature polariton condensation in variable dimensions. Combining slab PCs and vdWCs in the strong coupling regime allows unprecedented engineering flexibility for exploring novel polariton phenomena and device concepts.

We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 K and 300 K, respectively., Comment: 23 pages, 5 figures

We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films., Comment: To appear in Appl. Phys. Lett. 13 pages, 3 figures. Includes Supplementary Material

According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moir\'e patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized bilayer graphene moir\'e crystals with accurately controlled twist angles smaller than 1 degree and studied their properties using scanning probe microscopy and electron transport. We observe conductivity minima at charge neutrality, satellite gaps that appear at anomalous carrier densities for twist angles smaller than 1 degree, and tunneling densities-of-states that are strongly dependent on carrier density. These features are robust up to large transverse electric fields. In perpendicular magnetic fields, we observe the emergence of a Hofstadter butterfly in the energy spectrum, with four-fold degenerate Landau levels, and broken symmetry quantum Hall states at filling factors 1, 2, 3. These observations demonstrate that at small twist angles, the electronic properties of bilayer graphene moir\'e crystals are strongly altered by electron-electron interactions., Comment: 17 pages, 7 main figures; to appear in Proceedings of the National Academy of Sciences

We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe$_2$. The QHSs sequence transitions between predominantly even and predominantly odd filling factors as the hole density is tuned in the range $1.6 - 12\times10^{12}$ cm$^{-2}$. The QHSs sequence is insensitive to the transverse electric field, and tilted magnetic field measurements reveal an insensitivity of the QHSs sequence to the in-plane magnetic field, evincing that the hole spin is locked perpendicular to the WSe$_2$ plane. These observations imply that the QHSs sequence is controlled by the Zeeman-to-cyclotron energy ratio, which remains constant as a function of perpendicular magnetic field at a fixed carrier density, but changes as a function of density due to strong electron-electron interaction., Comment: 5 pages, 4 figures

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, we simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. We find that rotational misalignment between the channel layers and the tunnel barrier in this van der Waal's heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal's heterostructures., Comment: 12 pages, 7 figures

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using $high-\kappa$ oxides, respectively. The goal of this work is to demonstrate a $high-\kappa$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-\kappa$ dopant', we achieved a contact resistance of ~ $180$ ${\Omega}.{\mu}m$ which is the lowest reported value for ML $MoS_{2}$. An ON current as high as $240$ ${\mu}A/{\mu}m$ and field effect mobility as high as $83$ $cm^2/V-s$ were realized using this doping technique. Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$ $cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are among the highest mobility values reported on ML $MoS_{2}$. We also analyzed the doping effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent when stoichiometric $TiO_{2}$ is used, using ab initio density functional theory (DFT) calculations which shows excellent agreement with our experimental findings. Based on the interfacial-oxygen-vacancy mediated doping as seen in the case of $high-\kappa$ ATO - ML $MoS_{2}$, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a $high-\kappa$ dielectric environment., Comment: 31 pages, 6 figures, 5 supporting figures, Nano Letters 2015

We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature dependent electrical measurements show an insulating behavior which agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states., Comment: 11 pages, 5 figures + Supporting Information

We study the frictional drag between carriers in two bilayer graphene flakes separated by a 2 $-$ 5 nm thick hexagonal boron nitride dielectric. At temperatures ($T$) lower than $\sim$ 10 K, we observe a large anomalous negative drag emerging predominantly near the drag layer charge neutrality. The anomalous drag resistivity increases dramatically with reducing {\it T}, and becomes comparable to the layer resistivity at the lowest {\it T} = 1.5 K. At low $T$ the drag resistivity exhibits a breakdown of layer reciprocity. A comparison of the drag resistivity and the drag layer Peltier coefficient suggests a thermoelectric origin of this anomalous drag., Comment: 5 pages, 4 figures, supplementary material uploaded as an ancillary file

We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2$, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe$_2$ reveal the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of $0.45m_{0}$ for both mono and bilayer WSe$_2$., Comment: 5 pages, 4 figures

Plasmonic metasurfaces are able to modify the wavefront by altering the light intensity, phase and polarization state. Active plasmonic metasurfaces would allow dynamic modulation of the wavefront which give rise to interesting application such as beam-steering, holograms and tunable waveplates. Graphene is an interesting material with dynamic property which can be controlled by electrical gating at an ultra-fast speed. We use a graphene-integrated metasurface to induce a tunable phase change to the wavefront. The metasurface supports a Fano resonance which produces high-quality resonances around 7.7 microns. The phase change is measured using a Michleson interferometry setup. It is shown that the reflection phase can change up to 55 degrees. In particular the phase can change by 28 degrees while the amplitude is nearly constant. The anisotropic optical response of the metasurface is used to modulate the ellipticity of the reflected wave in response to an incident field at 45 degree. We show a proof of concept application of our system in potentially ultra-fast laser interferometry with sub-micron accuracy., Comment: 14 pages, 5 figures, references added, typo removed

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe$_2$ results in $p$-FETs with $I_{ON}$/$I_{OFF}$ ratios exceeding 10$^7$, and contacts that remain Ohmic down to cryogenic temperatures. The output characteristics show current saturation and gate tunable negative differential resistance. The devices show intrinsic hole mobilities around 140 cm$^2$/Vs at room temperature, and approaching 4,000 cm$^2$/Vs at 2 K. Temperature-dependent transport measurements show a metal-insulator transition, with an insulating phase at low densities, and a metallic phase at high densities. The mobility shows a strong temperature dependence consistent with phonon scattering, and saturates at low temperatures, possibly limited by Coulomb scattering, or defects., Comment: 18 pages, 5 figures, 7 supporting figures, ACS Nano 2015

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment., Comment: 26 pages, 6 figures; supporting information includes one figure

The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices., Comment: 18 pages, 7 figures

Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a non-linear carrier density dependence, and bears signatures of electron-electron interactions. The data allow a direct measurement of the electric field-induced bandgap at zero magnetic field, the orbital Landau level (LLs) energies, and the broken symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all half-filled LLs, as well as emerging phases at filling factors \nu = 0 and \nu = +-2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs., Comment: 21 pages, 4 figures; supplementary material includes four figures, and one table

Metamaterials and meta-surfaces represent a remarkably versatile platform for light manipulation, biological and chemical sensing, nonlinear optics, and even spaser lasing. Many of these applications rely on the resonant nature of metamaterials, which is the basis for extreme spectrally selective concentration of optical energy in the near field. The simplicity of free-space light coupling into sharply-resonant meta-surfaces with high resonance quality factors Q>>1 is a significant practical advantage over the extremely angle-sensitive diffractive structures or inherently inhomogeneous high-Q photonic structures such as toroid or photonic crystal microcavities. Such spectral selectivity is presently impossible for the overwhelming majority of metamaterials that are made of metals and suffer from high plasmonic losses. Here, we propose and demonstrate Fano-resonant all-semiconductor optical meta-surfaces supporting optical resonances with quality factors Q>100 that are almost an order of magnitude sharper than those supported by their plasmonic counterparts. These silicon-based structures are shown to be planar chiral, opening exciting possibilities for efficient ultra-thin circular polarizers and narrow-band thermal emitters of circularly polarized radiation., Comment: 16 pages, 4 figures, and 1 table

Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide (TMD) Molybdenum-disulfide (MoS2). We consider the 1st (Li, Na, K) and 7th (F, Cl, Br) column atoms and metals (Sc, Ti, Ta, Mo, Pd, Pt, Ag, Au). Three high symmetry sites for the adatom on the surface of monolayer MoS2 are examined as starting points to search for the most energetically stable configuration for each adatom-monolayer MoS2 system, as well as the type of associated bonding. For the most stable adatom positions, we characterize the emergence of adatom-induced electronic states including any dopant states., Comment: Accepted for publication in Applied Physics Letters

We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-aligned spin-on-doping is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications., Comment: 5 pages, 5 figures

We review the fabrication and key transport properties of graphene double layers, consisting of two graphene monolayers placed in close proximity, independently contacted, and separated by an ultra-thin dielectric. We outline a simple band structure model relating the layer densities to the applied gate and inter-layer biases, and show that calculations and experimental results are in excellent agreement both at zero and in high magnetic fields. Coulomb drag measurements, which probe the electron-electron scattering between the two layers reveal two distinct regime: (i) diffusive drag at elevated temperatures, and (ii) mesoscopic fluctuation-dominated drag at low temperatures. We discuss the Coulomb drag results within the framework of existing theories., Comment: 9 pages, 6 figures

We investigate the transverse electric field ($E$) dependence of the $\nu$=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ($\rho_{xx}$) measured at $\nu$=0 shows an insulating behavior which is strongest in the vicinity of $E$=0, and at large $E$-fields. At a fixed perpendicular magnetic field ($B$), the $\nu$=0 QHS undergoes a transition as a function of $E$, marked by a minimum, temperature-independent $\rho_{xx}$. This observation is explained by a transition from a spin polarized $\nu$=0 QHS at small $E$-fields, to a valley (layer) polarized $\nu$=0 QHS at large $E$-fields. The $E$-field value at which the transition occurs has a linear dependence on $B$, Comment: 5 pages, 5 figures

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation., Comment: 3 pages, 4 figures

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 samples, we map out the contact resistance window for which lateral spin transport is observed, manifestly showing the conductivity matching required for spin injection. Our analysis, based on the spin diffusion theory, indicates that the spin diffusion length is larger than 100 {\mu}m in germanium nanowires at 4.2 K.

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio., Comment: 5 pages, 4 figures. IEEE Transactions on Electron Devices (in press)

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature., Comment: 12 pages, 6 figures