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21 results on '"Turkmen, Esref"'

2. A 223–276-GHz Cascadable FMCW Transceiver in 130-nm SiGe BiCMOS for Scalable MIMO Radar Arrays

Author

Turkmen, Esref, Aksoyak, Ibrahim Kagan, Djondovic, Pavle, Yilmaz, Selahattin Berk, Debski, Wojciech, Winkler, Wolfgang, and Ulusoy, Ahmet Cagri

Abstract

This article reports a 223–276-GHz monostatic frequency-modulated continuous-wave (FMCW) radar transceiver (TRX) chip. The TRX is suitable for building massive multiple-input multiple-output (MIMO) radar arrays in the daisy-chain topology because of its cascadable feature based on the injection-locking feedthrough technique. The TRX is based on $18\times $ frequency multiplication chain that can be fed by either an external signal generator (SG) or its internal voltage-controlled oscillator (VCO). The modulation bandwidth (BW) is about 53 GHz when the internal VCO is activated, resulting in a range resolution of better than 3 mm. The peak output power is 3.1 dBm at 240 GHz with a 3-dB BW of 41 GHz. Its receiver (RX) channel is based on the in-phase/quadrature architecture enabling complex signal sampling. The minimum single-sideband (SSB) noise figure (NF) is 18.7 dB at 255 GHz, and the average value is 20.7 dB. The TRX chip includes an on-chip antenna coupled with a silicon lens, offering a peak effective isotropic radiated power (EIRP) of 27 dBm at 240 GHz. The TRX consumes a dc current of 234 and 270.1 mA from a single supply voltage of 3.3 V for external and internal VCO operations, respectively. The chip occupies a total area of 2.7 mm 2 ( $2.16\times1.26$ mm).

Published
2023
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3. Car Interior Radar for Advanced Life-Signs Detection

Author

Turkmen, Esref, primary, Zerna, Conrad, additional, Kandis, Hamza, additional, Hotopan, Ramona, additional, Debski, Wojciech, additional, Scherbaum, Sabine, additional, Ott, Arndt, additional, Govoni, Leonardo, additional, Drost, Andreas, additional, Dupont, Roger Frederick, additional, and Balbach-Sobkowicz, Johann Josef, additional

Published
2022
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13. High Responsivity Power Detectors For W/D-Bands Passive Imaging Systems In 0.13 Mu M Sige Bicmos Technology

Author

Ustundag, Berktug, Turkmen, Esref, Cetindogan, Barbaros, Kaynak, Mehrnet, and Gurbuz, Yasar

Abstract

This paper presents the design, implementation and measurement results of power detectors (PDs) operating at W-band and D-band. Two detectors are designed and fabricated in 0.13 mu m SiGe BiCMOS technology. The measured minimum NEPs are 0.43 and 4.2 pW/Hz(1/2), and the peak responsivities are 772 and 132 kV/W for the W-band and D-band power detectors, respectively. Both the PDs have wideband input matching to improve the performance over the entire bandwidth and occupy less than 0.37 mm(2) of area. The fabricated chips demonstrate the state-of-the-art responsivity performance to be utilized in W/D-bands radiometer systems.

Published
2018

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