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Femtosecond transient soft X-ray Absorption Spectroscopy (XAS) is a very promising technique that can be employed at X-ray Free Electron Lasers (FELs) to investigate out-of-equilibrium dynamics for material and energy research. Here we present a dedicated setup for soft X-rays available at the Spectroscopy & Coherent Scattering (SCS) instrument at the European X-ray Free Electron Laser (EuXFEL). It consists of a beam-splitting off-axis zone plate (BOZ) used in transmission to create three copies of the incoming beam, which are used to measure the transmitted intensity through the excited and unexcited sample, as well as to monitor the incoming intensity. Since these three intensity signals are detected shot-by-shot and simultaneously, this setup allows normalized shot-by-shot analysis of the transmission. For photon detection, the DSSC imaging detector, which is capable of recording up to 800 images at 4.5 MHz frame rate during the FEL burst, is employed and allows approaching the photon shot-noise limit. We review the setup and its capabilities, as well as the online and offline analysis tools provided to users., Comment: 11 figures

The complex electronic structure of metallic ferromagnets is determined by a balance between exchange interaction, electron hopping leading to band formation, and local Coulomb repulsion. The interplay between the respective terms of the Hamiltonian is of fundamental interest, since it produces most, if not all, of the exotic phenomena observed in the solid state. By combining high energy and temporal resolution in femtosecond time-resolved X-ray absorption spectroscopy with ab initio time-dependent density functional theory we analyze the electronic structure in fcc Ni on the time scale of these interactions in a pump-probe experiment. We distinguish transient broadening and energy shifts in the absorption spectra, which we demonstrate to be caused by electron repopulation and correlation-induced modifications of the electronic structure, respectively. Importantly, the theoretical description of this experimental result hence requires to take the local Coulomb interaction into account, revealing a temporal interplay between band formation, exchange interaction, and Coulomb repulsion.

Gotthard-II is a charge-integrating microstrip detector developed for experiments and diagnostics at free-electron lasers using hard X-rays of 5 keV - 20 keV. Thanks to its excellent single photon sensitivity, large dynamic range as well as high frame rate of 4.5 MHz in burst mode, its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), beam diagnostics, as well as veto signal generation for pixel detectors. The Gotthard-II ASIC has been designed and fabricated using UMC-110 nm technology. The final ASIC design and performance in terms of noise, linearity, dynamic range, coupling between channels and speed will be discussed in the paper. In addition, a first measurement of an X-ray absorption spectrum of a standard copper sample has been done. The performance of the Gotthard-II in an experiment using energy dispersive X-rays has been demonstrated., Comment: 25 pages, 16 figures

Gotthard-II is a silicon microstrip detector developed for the European X-ray Free-Electron Laser (XFEL.EU). Its potential scientific applications include X-ray absorption/emission spectroscopy, hard X-ray high resolution single-shot spectrometry (HiREX), energy dispersive experiments at 4.5 MHz frame rate, beam diagnostics, as well as veto signal generation for pixel detectors. Gotthard-II uses a silicon microstrip sensor with a pitch of 50 $\mu$m or 25 $\mu$m and with 1280 or 2560 channels wire-bonded to readout chips (ROCs). In the ROC, an adaptive gain switching pre-amplifier (PRE), a fully differential Correlated-Double-Sampling (CDS) stage, an Analog-to-Digital Converter (ADC) as well as a Static Random-Access Memory (SRAM) capable of storing all the 2700 images in an XFEL.EU bunch train will be implemented. Several prototypes with different designs of the analogue front-end (PRE and CDS) and ADC test structures have been fabricated in UMC-110 nm CMOS technology and their performance has been evaluated. In this paper, the performance of the analogue front-end and ADC will be summarized., Comment: 11 pages, 14 figures

Gotthard-II is a 1-D microstrip detector specifically developed for the European X-ray Free-Electron Laser. It will not only be used in energy dispersive experiments but also as a beam diagnostic tool with additional logic to generate veto signals for the other 2-D detectors. Gotthard-II makes use of a silicon microstrip sensor with a pitch of either 50 {\mu}m or 25 {\mu}m and with 1280 or 2560 channels wire-bonded to adaptive gain switching readout chips. Built-in analog-to-digital converters and digital memories will be implemented in the readout chip for a continuous conversion and storage of frames for all bunches in the bunch train. The performance of analogue front-end prototypes of Gotthard has been investigated in this work. The results in terms of noise, conversionngain, dynamic range, obtained by means of infrared laser and X-rays, will be shown. In particular, the effects of the strip-to-strip coupling are studied in detail and it is found that the reduction of the coupling effects is one of the key factors for the development of the analogue front-end of Gotthard-II., Comment: 22 pages, 26 figures

The European X-ray Free Electron Laser (XFEL.EU) will provide every 0.1 s a train of 2700 spatially coherent ultrashort X-ray pulses at 4.5 MHz repetition rate. The Small Quantum Systems (SQS) instrument and the Spectroscopy and Coherent Scattering instrument (SCS) operate with soft X-rays between 0.5 keV - 6keV. The DEPFET Sensor with Signal Compression (DSSC) detector is being developed to meet the requirements set by these two XFEL.EU instruments. The DSSC imager is a 1 mega-pixel camera able to store up to 800 single-pulse images per train. The so-called ladder is the basic unit of the DSSC detector. It is the single unit out of sixteen identical-units composing the DSSC-megapixel camera, containing all representative electronic components of the full-size system and allows testing the full electronic chain. Each DSSC ladder has a focal plane sensor with 128 x 512 pixels. The read-out ASIC provides full-parallel readout of the sensor pixels. Every read-out channel contains an amplifier and an analog filter, an up-to 9 bit ADC and the digital memory. The ASIC amplifier have a double front-end to allow one to use either DEPFET sensors or Mini-SDD sensors. In the first case, the signal compression is a characteristic intrinsic of the sensor; in the second case, the compression is implemented at the first amplification stage. The goal of signal compression is to meet the requirement of single-photon detection capability and wide dynamic range. We present the first results of measurements obtained using a 64 x 64 pixel DEPFET sensor attached to the full final electronic and data-acquisition chain., Comment: Preprint proceeding for IWORID 2016, 18th International Workshop on Radiation Imaging Detectors, 3rd-7th July 2016, Barcelona, Spain

In this paper, the DSSC safety-interlock system is introduced. It is designed to keep the DSSC mega-pixel camera in a safe-state. The system is composed of four inter-communicating sub-systems referred here as a master SIB (safety-interlock board) and three partner SIBs. Each SIB monitors and processes 75 temperature sensors mainly located in the focal plane and also distributed inside the camera-head electronics. It monitors the signals from two pressure sensors, one humidity sensor as well as the connectivity to sixteen low-voltage and two high-voltage cables. The master SIB supervises the signals to and from external equipments like the cooling system, pressure gauge, power crates and status information from experimental environment. SIB is an 8-layer printed-circuit board (PCB) with a micro-controller sitting on top as its central processing unit. A decision-matrix software reads the sensor status continuously and determines whether the camera is in a safe state or not. All error and warnings flags are sent to the detector control software framework and the end user directly. These flags are also stored every 100 ms together with the image data. The full SIB sensor data is sent to the back end for offline analysis. A shutdown sequence is initiated by SIB in case of a critical failure. The safety-interlock philosophy, hardware design, and software architecture along with test results will be presented., Comment: 2016 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)

The electron-proton collisions collected by the H1 and ZEUS experiments at HERA comprise a unique particle physics data set, and a comprehensive range of measurements has been performed to provide new insight into the structure of the proton. The high centre of mass energy at HERA has also allowed rare processes to be studied, including the production of W and Z bosons and events with multiple leptons in the final state. The data have also opened up a new domain to searches for physics beyond the Standard Model including contact interactions, leptoquarks, excited fermions and a number of supersymmetric models. This review presents a summary of such results, where the analyses reported correspond to an integrated luminosity of up to 1 fb^-1, representing the complete data set recorded by the H1 and ZEUS experiments., Comment: 75 pages, 64 figures, to be published in EPJC

A MHz frame rate X-ray area detector (LPD - Large Pixel Detector) is under development by the Rutherford Appleton Laboratory for the European XFEL. The detector will have 1 million pixels and allows analogue storage of 512 images taken at 4.5 MHz in the detector front end. The LPD detector has 500 mm thick silicon sensor tiles that are bump bonded to a readout ASIC. The ASICs preamplifier provides relatively low noise at high speed which results in a high dynamic range of 10^5 photons over an energy range of 5-20 keV. Small scale prototypes of 32x256 pixels (LPD 2-Tile detector) and 256x256 pixels (LPD supermodule detector) are now available for X-ray tests. The performance of prototypes of the detector is reported for first tests under synchrotron radiation (PETRA III at DESY) and Free-Electron-Laser radiation (LCLS at SLAC). The initial performance of the detector in terms of signal range and noise, radiation hardness and spatial and temporal response are reported. The main result is that the 4.5 MHz sampling detection chain is reliably working, including the analogue on-chip memory concept. The detector is at least radiation hard up to 5 MGy at 12 keV. In addition the multiple gain concept has been demonstrated over a dynamic range to 10^4 at 12 keV with a readout noise equivalent to <1 photon rms in its most sensitive mode.

The European X-ray Free Electron Laser (XFEL.EU) will provide as-yet-unrivaled peak brilliance and ultra-short pulses of spatially coherent X-rays with a pulse length of less than 100 fs in the energy range between 0.25 and 25 keV. The high radiation intensity and ultra-short pulse duration will open a window for novel scientific techniques and will allow to explore new phenomena in biology, chemistry, material science, as well as matter at high energy density, atomic, ion and molecular physics. The variety of scientific applications and especially the unique XFEL.EU time structure require adequate instrumentation to be developed in order to exploit the full potential of the light source. To make optimal use of the unprecedented capabilities of the European XFEL and master these vast technological challenges, the European XFEL GmbH has started a detector R&D program. The technology concepts of the detector system presently under development are complementary in their performance and will cover the requirements of a large fraction of the scientific applications envisaged for the XFEL.EU facility. The actual status of the detector development projects which includes ultra-fast 2D imaging detectors, low repetition rate 2D detectors as well as strip detectors for e.g. spectroscopy applications and the infrastructure for the detectors' calibration and tests will be presented. Furthermore, an overview of the forthcoming implementation phase of the European XFEL in terms of detector R&D will be given., Comment: Prepared for the Proccedings of SPIE Optics + Optoelectronics Conference, Prague, Czech Republic, 15th - 18th April 2013

The variety of applications and especially the unique European XFEL time structure will require adequate instrumentation to be developed to exploit the full potential of the light source. Two-dimensional integrating X-ray detectors with ultra-fast read out up to 4.5 MHz for 1024 x 1024 pixel images are under development for a variety of imaging applications. The actual status of the European XFEL detector development projects is presented. Furthermore, an outlook will be given with respect to detector research and development, performance optimization, integration, and commissioning., Comment: Journal of Physics: Conference Series, 2012

Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations <100> and <111> produced by two vendors, CiS and Hamamatsu, have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron light source. Using capacitance/conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the surface densities of oxide charges and interface traps at the Si-SiO2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the surface density of oxide charges and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the surface density of oxide charges and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO2 to the Si-SiO2 interface. Finally, annealing studies have been performed at 60 and 80 degree C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy and the annealing kinetics of oxide charges and surface current determined., Comment: 10 pages, 6 figures, 3 tables