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This article analytically explores defect assisted spin injection in organic magnetic tunnel junctions (MTJs) [x/rubrene/Co, x = La 2 O 3 , LaMnO 3 , La 0.7 Ca 0.3 MnO 3 (LCMO), La 0.7 Sr 0.3 MnO 3 (LSMO)] employing nonequilibrium Green's function (NEGF). Spin precession at ferromagnet (FM)/organic semiconductor (OSC) interface defect states have been considered while modeling the MTJ devices. Variations in voltage dependent parallel (R P) and antiparallel (R A P ) resistances have been attributed to modified spin dependent scattering at modified spin resolved density of states of magnetic electrodes. Moreover, change in distribution of defect state depths at a spin injection interface has also been observed to modify R P /R A P , and hence, tunnel magnetoresistance (TMR) across the devices. Localization of defect state distribution due to a high spin split band may have resulted in large TMR for La 2 O 3 devices. Nonlinear spin transfer torque (STT) in devices other than LSMO indicates compensation of spin damping, resulting in a high TMR response across the devices. Hence, the localization of defect state distribution and the choice of magnetic electrodes with high spin split bands may be exercised to realize spintronic devices for low power spin memory applications. [ABSTRACT FROM AUTHOR]

In magnetic tunnel junctions (MTJs), an antiferromagnetic iridium manganese (IrMn) layer neighboring a ferromagnetic electrode is indispensable for pinning the magnetization of the ferromagnet. The effect of its antiferromagnetism on adjacent ferromagnet and, thus, the quantum transport is, nevertheless, scarcely studied. Here, we investigate the role of antiferromagnetically orientated Mn spins in IrMn on the spin-dependent tunneling transport in IrMn/FeCo/MgO/FeCo/IrMn MTJ by analyzing the tunneling magnetoresistance (TMR) effect. The opposite spin orientation of Mn induces the mixing of Bloch symmetries, Δ 1 and Δ 5 , irrespective of the spin alignment of the FeCo electrode. This auxiliary contribution from the Mn spins improves the tunneling in majority- and minority-spin channels in parallel configuration. In the antiparallel configuration, the tunneling in majority- and minority-spin channels is non-identical. The TMR as high as 8643% is obtained under equilibrium. In addition, the non-equilibrium behavior of TMR and the spin-filtering effect are examined in the voltage bias range of 10–50 mV. The TMR ratio of 3600% with the spin-filtering efficiency of ∼ 98% is maintained at 50 mV, presenting the MTJ as an effective spin-filtering device robust to the bias endurance. Finally, it is speculated that our device structure can be a potential spin–orbit torque-based MTJ that offers a giant TMR and promotes upscaling of the generation of multi-bit devices with a simplified design strategy. [ABSTRACT FROM AUTHOR]

Writing and reading of magnetization states via mechanical strain are crucial for the development of ultralow-power spintronic devices. In this study, a van der Waals magnetic tunnel junction (vdW MTJ) of Fe3GaTe2/h-BN/MnBi2Te4 is constructed to explore the magnetization reversal under in-plane biaxial strains. Interestingly, the interlayer magnetic coupling of devices can be tuned to ferromagnetic and antiferromagnetic states by tensile and compressive strains, respectively. The various magnetic couplings on applied strains are analyzed using the superexchange theory. Importantly, the interlayer coupling nearly vanishes after removing external strains, ensuring the nonvolatility of magnetization reversal, resulting in the nonvolatile writing of magnetization states in the present vdW MTJ. Moreover, the tunneling magnetoresistance ratio of the device is up to −5745%, which remains −1478% even with −2% strain, showing great potential for reading the magnetization states. Therefore, this work provides an alternate avenue to write and read magnetization states in one vdW MTJ under biaxial strains. [ABSTRACT FROM AUTHOR]

Atomic-scale spectroscopic imaging of sputtered magnetic tunnel junction structures with a thick oxygen-rich MgO barrier reveals the diffusion of iron and cobalt into the MgO barrier from CoFeB electrodes. First principles calculations are performed to (1) confirm that Fe diffusion through Mg vacancies is energetically favorable, (2) quantify the reduction of interfacial perpendicular magnetic anisotropy due to Fe diffusion into MgO, and (3) predict that the presence of Fe impurities in MgO causes an increased leakage and a tunneling magnetoresistance decrease. Through the chemical shift of the Fe L3 edge and the peak ratio Fe L3/Fe L2 measured by electron energy loss spectroscopy, we suggest that, within MgO, iron with mixed oxidation state Fe2+ and Fe3+ or higher is found in the as-grown structure, which is reduced by annealing to Fe2+. These results indicate that the stoichiometry of as-deposited MgO barrier layers plays an important role in controlling the microstructure and optimizing the performance of magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

Heusler alloy-based magnetic tunnel junctions have the potential to provide high spin polarization, small damping, and fast switching. In this study, junctions with a ferromagnetic electrode of Co2FeAl were fabricated via room-temperature sputtering on Si/SiO2 substrates. The effect of boron doping on Co2FeAl magnetic tunnel junctions was investigated for different boron concentrations. The surface roughness determined by atomic force microscope, and the analysis of x-ray diffraction measurement on the Co2FeAl thin film reveals critical information about the interface. The Co2FeAl layer was deposited on the bottom and on the top of the insulating MgO layer as two different sample structures to compare the impact of the boron doping on different layers through tunneling magnetoresistance measurements. The doping of boron in Co2FeAl had a large positive impact on the structural and magneto-transport properties of the junctions, with reduced interfacial roughness and substantial improvement in tunneling magnetoresistance. In samples annealed at low temperature, a two-level magnetoresistance was also observed. This is believed to be related to the memristive effect of the tunnel barrier. The findings of this study have practical uses for the design and fabrication of magnetic tunnel junctions with improved magneto-transport properties. [ABSTRACT FROM AUTHOR]

Suppression of 1/f noise in tunnel magnetoresistance (TMR) sensors is a central issue in the realization of magnetic field sensors with ultrafine magnetic field detectivity. Although AC modulation with an external magnetic field has been proposed as a method to shift the operating frequency of a sensor to a high frequency and substantially suppress 1/f noise, its effects on the two types of 1/f noise, that is, magnetic and electrical 1/f noise, are not well understood. In this study, we investigated the noise characteristics and signal detection performance of TMR sensors with an even-function resistance-magnetic field curve operated by the AC modulation method. For one TMR device in which the magnetic 1/f noise was dominant, AC modulation degraded the magnetic field detectivity owing to the additional noise induced by the AC modulation field. However, in another TMR device, in which the electrical 1/f noise was artificially enhanced by introducing lattice defects in the MgO tunnel barrier, AC modulation effectively suppressed the 1/f noise and improved the magnetic field detectivity by one order. This demonstrates that the AC modulation method using an external magnetic field is effective for magnetic field sensors in which electrical 1/f noise is dominant. [ABSTRACT FROM AUTHOR]

This article introduces an innovative non‐volatile associative memory (AM) that leverages spintronic synapses, employing magnetic tunnel junctions (MTJ) in conjunction with neurons constructed using carbon nanotube field‐effect transistors (CNTFETs). Our proposed design represents a significant advancement in area optimization and outperforms prior designs. We adopt MTJ‐based spintronic devices due to their remarkable attributes, including dependable reconfigurability and nonvolatility. Simultaneously, CNTFETs effectively address the longstanding limitations traditionally associated with MOSFETs. In this work, our proposed design undergoes rigorous simulations that account for process variations. The results demonstrate that our AM system closely approximates its ideal mathematical model, even with significant process variations. Furthermore, we investigate the impact of Tunnel Magnetoresistance (TMR) on the performance of our proposed AM system. Our investigations reveal that, even with a TMR as low as 100%, our design matches and often surpasses the performance of its counterparts operating with a TMR of 300%. This achievement holds profound significance from a fabrication standpoint, as fabricating MTJs with high TMR values can be intricate and costly. Overall, our novel AM system represents a significant breakthrough in emerging technologies, harnessing the unique strengths of spintronic synapses and advanced carbon nanotube transistors while robustly addressing challenges in performance and variability. [ABSTRACT FROM AUTHOR]

The sensitivity of Tunnel Magnetoresistance (TMR) sensors is characterized by significant temperature drift and poor sensitivity drift repeatability, which severely impairs measurement accuracy. Conventional temperature compensation techniques are often hindered by low compensation precision, inadequate real-time performance, and an inability to effectively address the issue of poor repeatability in temperature drift characteristics. To overcome these challenges, this paper introduces a novel method for suppressing temperature drift in TMR sensors. In this method, an alternating reference magnetic field is applied to TMR sensors, and the output amplitude at the frequency of the reference magnetic field is calculated to compensate the sensitivity temperature drift in real time. Temperature characteristic tests were conducted in a non-magnetic temperature test chamber, and the results revealed that the proposed method significantly reduced the TMR sensitivity drift coefficient from 985.39 ppm/°C to 59.08 ppm/°C. Additionally, the repeatability of sensitivity temperature characteristic curves was enhanced, with a reduction in root mean square error from 0.84 to 0.21. This approach effectively mitigates temperature-induced sensitivity drift without necessitating the use of a temperature sensor, and has the advantages of real-time performance and repeatability, providing a new approach for the high-precision temperature drift suppression of TMR. [ABSTRACT FROM AUTHOR]

In technology and industrial production, many applications require wide-bandwidth current measurements. In this paper, a signal fusion scheme for a current sensor comprising tunneling magnetoresistance and a current transformer is proposed, achieving a flat frequency response in the DC to MHz range. The measurement principles in different cases of the scheme are introduced, and the total transfer function of the entire scheme is derived by analyzing each section separately. Furthermore, the feasibility and selected parameters of the scheme are verified through a systematic simulation utilizing the MATLAB software. Based on the proposed scheme, a group of principal prototypes are built to experimentally evaluate the bandwidth, amplitude and phase flatness, accuracy, sensitivity, and impulse response. The relative amplitude variation in the passband of the fusion sensor is less than 4%, and the estimated bandwidth of the fusion sensor is close to 17 MHz. The accuracy is better than 0.6%, even when measuring the current at 1 MHz, and the relative standard deviation is 5% when measuring the impulse signal. The sensors developed using this scheme, with a low financial cost, have advantages in many wide-bandwidth current measuring scenarios. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junctions (MTJs) are widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) property of 2D magnets with atomically flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, primarily in ferromagnets. Here, A‐type antiferromagnetism in 2D vdW single‐crystal (Fe0.8Co0.2)3GaTe2 is reported with TN ≈ 203 K in bulk and ≈ 185 K in 9‐nm nanosheets. The metallic nature and out‐of‐plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature is obtained, with the TMR signal persisting at near‐room temperature 280 K. Furthermore, the TMR is tunable by the electric field, and the MTJ device operates stably with a low applied bias down to 1 mV (≈0.6 nA), highlighting its potential for energy‐efficient spintronic devices. This work opens up new opportunities for 2D antiferromagnetic spintronics and quantum devices. [ABSTRACT FROM AUTHOR]

Efficient detection of the magnetic state is a critical step towards useful antiferromagnet-based spintronic devices. Recently, finite tunneling magnetoresistance (TMR) has been demonstrated in tunnel junctions with antiferromagnetic electrodes, however, these studies have been mostly limited to junctions with two identical antiferromagnet (AFM) electrodes, where the matching of the spin-split Fermi surfaces played critical role. It remains unclear if AFMs can provide a finite net spin polarization, and hence be used as a spin polarizer or detector. In this work, we experimentally fabricate single-sided antiferromagnetic tunnel junctions consisting of one AFM electrode (Mn3Sn) and one ferromagnet (FM) electrode (CoFeB), where the spin polarized tunneling transport from AFM is detected by the FM layer. We observe a high TMR at cryogenic temperature (>100% at 10 K) in these asymmetric AFM tunnel junctions, suggesting a large effective spin polarization from Mn3Sn despite its nearly vanishing magnetization. The large TMR is consistent with recent theoretical studies where the broken symmetry in non-collinear AFMs is predicted to lift the spin degeneracy in the band structure. Our work provides strong evidence that spin polarized electrical transport can be achieved from AFMs. Antiferromagnets have both negligible stray fields, and fast dynamics, making them ideal for fast and densely packed spintronic devices. However, readout of the antiferromagnet state is challenging. Here, Chou et al detect the spin-polarized current emanating from a noncollinear AFM, Mn3Sn. [ABSTRACT FROM AUTHOR]

The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI2 using a combination of first-principles calculations and the non-equilibrium Green's function method. Multilayer graphene electrodes are employed to build a magnetic tunnel junction with bilayer LaI2 as ferromagnetic barrier. The magnetic tunnel junction turns out to be a perfect spin filter device with an outstanding tunneling magnetoresistance ratio of 653% under a bias of 0.1 V and a still excellent performance in a wide bias range. In combination with the obtained high spin injection efficiency this opens up great potential from the application point of view. [ABSTRACT FROM AUTHOR]

Herein, analytical modeling of Fe3O4/x(≈1.1 nm)/Co (x = rubrene, C60, and bathocuproine (BCP)) magnetic tunnel junctions (MTJs) has been performed using rubrene, C60, and BCP as organic spacer layers. The simulation is considered as nonequilibrium Green's function assuming spin precession at ferromagnet/organic semiconductor (FM/OSC) interface defect states. The voltage‐dependent resistances for both parallel (RP) and antiparallel (RAP) orientations have been observed to be dependent on spin injection from FM/OSC defect states. Pinning well‐dependent defect state depths have been associated with band misalignment‐induced lattice distortion at FM/OSC interface of the devices. The large tunnel magnetoresistance (TMR) response for rubrene‐based MTJ device has been attributed to a higher change of FM/OSC defect state depths with voltage. High TMR may have reduced spin torque‐dependent spin precession, leading to lower spin transfer torque for the rubrene device. Hence, engineering of defect states at the FM/OSC interface may lead to the successful realization of enhanced TMR in organic spacer MTJs for high‐performance spintronic memory applications. [ABSTRACT FROM AUTHOR]

This paper theoretically examines the impact of integrating 2D transition metal dichalcogenide (TMDCs) materials—MoS2, MoSe2, MoTe2, WS2, and WSe2—with a conventional MgO dielectric to fabricate double-barrier penta-layer (DBPL) magnetic tunnel junction (MTJ) structures. The MTJ device proposed herein is distinguished by a DBPL configuration which incorporates the composite tunnel barrier (CTB) of MgO-MX2-MgO sandwiched between the Fe ferromagnetic electrodes. Using density functional theory (DFT), we conducted a crystallographic analysis on all constituent materials to predict the properties necessary for device operation. Subsequent simulations leveraged an advanced nonequilibrium Green's function-based (NEGF) quantum transport simulator to quantify critical transport phenomena. Notable metrics such as tunneling magnetoresistance (TMR), differential TMR, and spin-transfer torque (STT), both in-plane and out-of-plane, were determined. Additionally, resistance and differential resistance profiles for parallel and antiparallel alignment states were thoroughly evaluated. Our findings elucidate the essential role of CTB composition in determining MTJ performance attributes, with particular dielectric pairings showing a significant enhancement in TMR ratios and an improved resistance differential without compromising the efficiency of STT. Interestingly, our proposed MTJ device shows a substantial increase in TMR values, ranging from 900% to 4300%, with very high sensitivity ranging from 7.33 × 106 T−1 to 3.36 × 107 T−1. [ABSTRACT FROM AUTHOR]

Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two‐dimensionality, enabling much smaller devices of novel concepts. One particular exciting direction lies in the current‐driven spin‐orbit torque (SOT). Here, for the first time, all vdW three‐terminal SOT memory is realized, employing the unique physics principle of gigantic intrinsic SOT of Fe3GeTe2 (FGT) and the well‐known industry‐adopted tunneling magnetoresistance (TMR) effect. The device operation procedure is designed and the FGT/h‐BN/FGT vdW heterostructure is fabricated as a proof of concept. This device exhibits a classical TMR effect and unambiguously demonstrates the conception by precise performance as expected: the magnetic information of the top‐FGT is written by current‐driven SOT and read out by TMR separately. The writing and reading current paths are physically decoupled, enhancing the design and optimization flexibility substantially and further strengthening the device's endurance naturally. The work will prompt more expansive use of vdW magnets for spintronic applications. [ABSTRACT FROM AUTHOR]

Aperiodic order is ubiquitous in nature and quite relevant in science and technology. There are extensive works in aperiodic structures studying fundamental characteristics in physical properties, such as fractality, self-similarity, and fragmentation. However, there are fewer reports in which aperiodicity signifies an improvement in physical quantities with practical applications. Here, we show that the aperiodicity of fractal or self-similar type optimizes the tunneling magnetoresistance and spin-valley polarization of magnetic silicene structures, raising the prospects of spin-valleytronics. We reach this conclusion by studying the spin-valley-dependent transport properties of complex (Cantor-like) magnetic silicene structures within the lines of the transfer matrix method and the Landauer–Büttiker formalism. We find that the self-similar arrangement of magnetic barriers in conjunction with structural asymmetry reduces the conductance oscillations typical of periodic magnetic silicene superlattices and more importantly makes the K ′ -spin-down conductance component dominant, resulting in nearly perfect positive and negative spin-valley polarization states accessible by simply reversing the magnetization direction. The tunneling magnetoresistance is not as prominent as in periodic magnetic silicene superlattices; however, it is better than in single magnetic junctions. Furthermore, the optimization of the spin-valley-dependent transport properties caused by the complex structure is superior than the corresponding one reported in typical aperiodic structures, such as Fibonacci and Thue–Morse magnetic silicene superlattices. [ABSTRACT FROM AUTHOR]

We have developed and optimized two categories of spin-ransfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance ratio, low critical current, high outputpower in the micro-watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magnetic memory, logic, and signal processing. The only distinguishing factor between the two categories, denoted as A-MTJs and B-MTJs, is the composition of their free layers, two CoFeB/0.21 Ta/6 CoFeSiB for A-MTJs and two CoFeB/0.21 Ta/7 NiFe for B-MTJs. Our study reveals that B-MTJs exhibit lower critical currents for auto-oscillation than A-MTJs. We found that both stacks have comparable saturation magnetization and anisotropy field, suggesting that the difference in auto-oscillation behavior is due to the higher damping of A-MTJs compared to B-MTJs. To verify this hypothesis, we employed the all-optical time-resolved magneto-optical Kerr effect technique, which confirmed that STT-MTJs with lower damping exhibited auto-oscillation at lower critical current values. Additionally, our study aimed to optimize the STT-MTJ performance by investigating the impact of the capping layer on the device's response to electronic and optical stimuli. [ABSTRACT FROM AUTHOR]

This work investigates the interplay between interfacial spin–orbit coupling (SOC) and magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions, which is crucial for advancing spintronic technologies. By employing systematic temperature-dependent transport measurements and inelastic electron tunneling spectroscopy, our study reveals that interfacial SOC at the Pt-terminated FePt/MgO interface significantly enhances magnon excitation during electron tunneling. This process results in a pronounced loss of spin memory in the spin-polarized current, diminishing the tunnel magnetoresistance ratio. Our findings provide critical insights into the mechanisms of spin memory loss, offering directions for optimizing spintronic device performance in the context of pronounced SOC environments. [ABSTRACT FROM AUTHOR]

In response to the zooming delay issue during the transition from a wide-area search to high-resolution target identification in high-magnification zoom lenses, we propose a drive technology based on voice coil motors. The linear motion of the motor is directly converted into the linear movement of the zoom lens group, significantly enhancing the zoom speed. Additionally, we introduce a high-precision closed-loop control technology utilizing a magnetic scale to achieve the rapid and precise positioning of the zoom lens group. The magnetic scale detection technology achieves precise positioning by detecting periodic changes in the magnetic field, working in conjunction with tunnel magnetoresistance sensors. Demonstrated with a 40× zoom lens example, this study elaborates on the motion trajectory planning and structural dimension design process of a voice coil motor, culminating in the assembly of a physical prototype. Practical validation experiments show that the full zoom time of the lens utilizing our technology is less than 0.3 s, where the full zoom time refers to the time required for the lens to zoom from the wide-angle end to the telephoto end. In positioning accuracy test experiments, lenses using our technology achieved a positioning deviation of less than 5 μm. [ABSTRACT FROM AUTHOR]

This study proposes a high-resolution rotation-measuring system for miniaturized MEMS ultrasonic motors using tunneling magnetoresistance (TMR) sensors for the first time. Initially, the architecture and principle of the rotation-measuring system are described in detail. Then, the finite element simulation is implemented to determine the miniaturized permanent magnet's residual magnetization, dimensions, and TMR sensor position. Finally, the experiments are implemented to evaluate the performance. Using calibration based on a high-precision servo motor, it is found that the relationship between the output and rotational angle is highly linear and immune to the rotor's out-of-plane movement. Meanwhile, the angle-detecting resolution is higher than 0.1°. After the calibration, the continuous rotation of the MEMS ultrasonic motor is tested. It is found that the angle testing result varies with a period close to 360°, which indicates that the rotation-measuring system has successfully detected the motor's rotation. [ABSTRACT FROM AUTHOR]

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Magnetic tunnel junction (MTJ) is one of the cornerstones of modern information technologies. Bringing MTJ's operation beyond the conventional binary regime, enabled by tunneling magnetoresistance (TMR) effect, is highly promising for prospective memory technologies and neuromorphic hardware development. In this paper, we demonstrate multilevel magnetoresistance states in an all-perovskite-oxide La0.7Sr0.3MnO3 (LSMO)/BaTiO3/LSMO heterostructure grown on MgO substrates. Unlike traditional TMR, we observe four distinct regions of increased magnetoresistance, which result in three magnetic field-induced resistance states in total. We show that the observed phenomenon arises from the low-field magnetoresistance effect, which occurs in the two epitaxial LSMO layers, independently and at different values of the magnetic field. The effect is well simulated by a model based on the presence of structural defects and non-uniform deformations in the LSMO layers, induced by the large lattice mismatch of the LSMO with the MgO substrate. We believe that our findings contribute to the understanding of complex magnetoresistance effects in MTJs and can be taken into consideration for the design of multi-bit memory cells or neuromorphic devices. [ABSTRACT FROM AUTHOR]

We study the electron tunneling (ET) and local Andreev reflection (AR) processes in a quantum dot (QD) coupled to the left and right ferromagnetic leads with noncollinear ferromagnetisms. In particular, we consider that the QD is also side-coupled to a nanowire hosting Majorana bound states (MBSs) at its ends. Our results show that when one mode of the MBSs is coupled simultaneously to both spin-up and spin-down electrons on the QD, the height of the central peak is different from that if the MBS is coupled to only one spin component electrons. The ET and AR conductances, which are mediated by the dot–MBS hybridization, strongly depend on the angle between the left and right magnetic moments in the leads. Interaction between the QD and the MBSs will result in sign change of the angle-dependent tunnel magnetoresistance. This is very different from the case when the QD is coupled to regular fermonic mode, and can be used for detecting the existence of MBSs, a current challenge in condensed matter physics under extensive investigations. [ABSTRACT FROM AUTHOR]

Spin-transfer torque magnetic random access memory (MRAM) devices have considerable potential for high-performance computing applications; however, progress in this field has been hindered by difficulties in etching the magnetic tunnel junction (MTJ). One notable issue is electrical shorting caused by the accumulation of etching by-products on MTJ surfaces. Attempts to resolve these issues led to the development of step-MTJs, in which etching does not proceed beyond the MgO barrier; however, the resulting devices suffer from poor scalability and unpredictable shunting paths due to asymmetric electrode structures. This paper outlines the fabrication of pillar-shaped MTJs via a four-step etching process involving reactive-ion etching, ion-beam etching, oxygen exposure, and ion-trimming. The respective steps can be cross-tuned to optimize the shape of the pillars, prevent sidewall redeposition, and remove undesired shunting paths in order to enhance MTJ performance. In experiments, the proposed pillar-MTJs outperformed step-MTJs in key metrics, including tunneling magnetoresistance, coercivity, and switching efficiency. The proposed pillar-MTJs also enable the fabrication of MRAM cells with smaller cell sizes than spin–orbit torque devices and require no external field differing from voltage-controlled magnetic anisotropy devices. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and efficient detection are the most critical aspects. Although the generation and manipulation of skyrmions have been extensively studied, efficient electrical detection of mobile skyrmions by using techniques that are compatible with modern magnetic memory technology, remains to be adequately addressed. Here, through integrating magnetic multilayers that host nanoscale skyrmions, together with the magnetic tunnel junctions (MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by recording the time-dependent TMR ratios. Along with many recent developments, our results could advance the development of skyrmionic memory and logic devices. [ABSTRACT FROM AUTHOR]

Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI3 due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moiré stacking—with potential spintronic applications even when the underlying material possesses a negligible Dzyaloshinskii–Moriya or dipole–dipole interaction. Recent measurements have shown evidence of coexisting FM and AFM layer order in small-twist-angle CrI3 bilayers and double bilayers. Yet, the nature of the magnetic textures remains unresolved and possibilities for their manipulation and electrical readout are unexplored. Here, we use tunneling magnetoresistance to investigate the collective spin states of twisted double-bilayer CrI3 under both out-of-plane and in-plane magnetic fields together with detailed micromagnetic simulations of domain dynamics based on magnetic circular dichroism. Our results capture hysteretic and anisotropic field evolutions of the magnetic states and we further uncover two distinct non-volatile spin textures (out-of-plane and in-plane domains) at ≈1° twist angle, with a different global tunneling resistance that can be switched by magnetic field. Twisted 2D magnets provide a rich playground for potential spintronic device architectures. Here, the authors use tunneling magnetoresistance measurements to investigate the collective spin states of twisted double bilayer CrI3 in various configurations, providing evidence of non-volatile spin textures. [ABSTRACT FROM AUTHOR]

In this work, we focus on a detailed study of the role of each component layer in the multilayer structure of a magnetic tunnel junction (MTJ) as well as the analysis of the effects that the deposition parameters of the thin films have on the performance of the structure. Various techniques including atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were used to investigate the effects of deposition parameters on the surface roughness and thickness of individual layers within the MTJ structure. Furthermore, this study investigates the influence of thin films thickness on the magnetoresistive properties of the MTJ structure, focusing on the free ferromagnetic layer and the barrier layer (MgO). Through systematic analysis and optimization of the deposition parameters, this study demonstrates a significant improvement in the tunnel magnetoresistance (TMR) of the MTJ structure of 10% on average, highlighting the importance of precise control over thin films properties for enhancing device performance. [ABSTRACT FROM AUTHOR]

Magnetic micro and nano sensors can be used in a broad variety of applications, e.g., for navigation, automotives, smartphones and also for health monitoring. Based on physical effects such as the well-known magnetic induction, the Hall effect, tunnel magnetoresistance and giant magnetoresistance, they can be used to measure positions, flow, pressure and other physical properties. In biomedicine and healthcare, these miniaturized sensors can be either integrated into garments and other wearables, be directed through the body by passive capsules or active micro-robots or be implanted, which usually necessitates bio-functionalization and avoiding cell-toxic materials. This review describes the physical effects that can be applied in these sensors and discusses the most recent micro and nano sensors developed for healthcare applications. [ABSTRACT FROM AUTHOR]

The exceptional properties of two‐dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application of 2D materials in magnetic sensing and data storage. Here, we report the observation of highly tunable room‐temperature tunneling magnetoresistance through electronic means in a full vdW Fe3GaTe2/WSe2/Fe3GaTe2 MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 K and 50% at 300 K, respectively. Importantly, the magnitude and sign of TMR can be modulated by a DC bias current, even at room temperature, a capability that was previously unrealized in full vdW MTJs. This tunable TMR arises from the contribution of energy‐dependent localized spin states in the metallic ferromagnet Fe3GaTe2 during tunnel transport when a finite electrical bias is applied. Our work offers a new perspective for designing and exploring room‐temperature tunable spintronic devices based on vdW magnet heterostructures. [ABSTRACT FROM AUTHOR]

This paper shows how double perovskites affect the operation of magnetic tunnel junction (MTJ) memory devices. Spin-polarized MTJs may provide a viable alternative to charge-based storage devices. The proposed MTJ memory device uses Cs AgBiCl , Cs AgBiBr , and Cs CuBiBr for the dielectric layer. A composite dielectric layer (CDL) formed by MgO–Cs AgBiCl /Cs AgBiBr /Cs CuBiBr –MgO is presented in this paper and compared. The CDL has introduced ferromagnetic layers between CoFeB and Fe in a penta-layer MTJ device. MTJ devices with Fe–CDL–Fe and CoFeB–CDL–CoFeB have higher switching currents and TMR ratios than those with Fe–MgO–Fe. The antiparallel resistance, parallel resistance, spin transfer torque (STT), tunnel magnetoresistance (TMR), and differential TMR of the proposed MTJ are calculated using a nonequilibrium Green's function simulator. The power consumption of Fe–MgO–Cs AgBiBr –MgO–Fe based MTJ devices is 14.25 nW. The Fe–MgO–Cs AgBiBr –MgO–Fe showed the highest TMR ratio (1137 ) among all the MTJ models studied. [ABSTRACT FROM AUTHOR]

This document is an editorial for a special issue of the journal Micromachines on the topic of micro and nanosensors. The editorial highlights the growing interest in making electrochemical sensors smaller while maintaining their sensitivity and selectivity. It explains that micro and nanosensors are used for highly sensitive measurements of various parameters such as pressure, humidity, concentration, and temperature, and have wide applications in fields like electronics, medicine, automotive, and industry. The special issue includes eight papers that cover topics such as laser-inscribed graphene electrodes, glucose sensors, tunnel magnetoresistance current sensors, quartz resonant pressure sensors, MEMS fluxgate sensors, metamaterial structures, micro 4D imaging sensors, and the electrochemical usage of microscale sensors for the determination of antidiabetic drugs. The editorial expresses gratitude to the authors and reviewers for their contributions to the special issue. [Extracted from the article]

We report on tunnel magnetoresistance (TMR) sensors with two ferromagnetic free layers (FLs) on both sides of a MgO tunnel barrier. The magnetizations of these FLs are weakly (softly) pinned in an anti-parallel configuration by the exchange bias of IrMn antiferromagnetic layers through ferromagnetic and/or antiferromagnetic interlayer couplings of non-magnetic spacer layers. These dual soft-pinned FL (SPFL) sensors show a symmetric resistance (R) change with respect to the polarity of the external magnetic field (H) applied to the hard axis (HA) of the SPFLs and TMR ratios of over 200%, which is much higher than those of the single-SPFL sensors, where one side of the ferromagnetic layers is an SPFL and the other side is a strongly pinned reference layer. When the applied H exhibits an angular misalignment from the HA, dual-SPFL sensors show much-reduced asymmetry in the R–H curves than single-SPFL sensors. Macrospin simulations of the magnetization behavior and R–H curve for both dual- and single-SPFL sensors revealed that the small asymmetry in the R–H curves of dual-SPFL sensors was owing to their significantly smaller dependence of relative magnetization angle between the SPFLs on the magnetic field misalignment from the HA. These results suggest that dual-SPFL TMR sensors are promising for use in magnetic sensors such as encoder sensors for position and rotation detections. [ABSTRACT FROM AUTHOR]

We investigated the effect of interfacial nitrogen (N) defects on tunnel magnetoresistance (TMR) in Fe/MgO/Fe magnetic tunnel junctions (MTJs) which are the basic building block of magnetoresistive random access memory. The N atoms are predicted to originate from the SiN covering for antioxidation. It was found from first-principles quantum-transport calculations that the N defects significantly worsen the TMR. This is particularly evident in the MTJ models with an additional N atom at the MgO/Fe interface, because a conduction channel appears in the antiparallel magnetization configuration due to the N defects. The TMR is directly related to the read error rate of data and the scaling of the memory cell. Therefore, the prevention of nitrogen contamination during the manufacturing processes is a prerequisite for maintaining high performance. [ABSTRACT FROM AUTHOR]

Magnetic micro and nano sensors can be used in a broad variety of applications, e.g., for navigation, automotives, smartphones and also for health monitoring. Based on physical effects such as the well-known magnetic induction, the Hall effect, tunnel magnetoresistance and giant magnetoresistance, they can be used to measure positions, flow, pressure and other physical properties. In biomedicine and healthcare, these miniaturized sensors can be either integrated into garments and other wearables, be directed through the body by passive capsules or active micro-robots or be implanted, which usually necessitates bio-functionalization and avoiding cell-toxic materials. This review describes the physical effects that can be applied in these sensors and discusses the most recent micro and nano sensors developed for healthcare applications.

The potential for amplifying tunnel magnetoresistance and magnetoimpedance in island nanofilms without energy consumption or the use of amplifying devices was studied. Such amplification was observed for the films deposited on a Gd2O3 layer instead of a glass substrate. The enhancement is due to the f–d exchange interaction established between atoms with unfilled f- and d-electron shells, present in both Fe and Gd2O3. The f–d exchange interaction enhances the ordering of the magnetic structure within the Fe ferromagnetic layer, increases its magnetization, and subsequently improves the properties that depend on this magnetization. Iron and Gd2O3 were selected because the magnetic moments of Fe in the iron group and Gd in the lanthanide series are among the highest effective ones: μFe = 7.13 μB and μGd = 7.95 μB. This, according to theory, determines the high energy of the f–d exchange interaction. The island morphology of Fe films deposited on a Gd2O3 layer enabled electron tunneling under the influence of the f–d exchange interaction. This allowed the study of tunnel magnetoresistance under direct current and magnetoimpedance under alternating current influenced by the f–d exchange interaction. The frequency dependence of the active component Z', the reactive component Z'', and the total impedance Z of Fe films on glass and Gd2O3 substrates, without and under a constant magnetic field of 7500 Oe, was analyzed. These characteristics are used to determine the frequency dependence of tunnel magnetoimpedance and estimate tunnel magnetoresistance for Fe island films on glass and Gd2O3 substrates. These characteristics were found to be 55 % higher, on average, for Fe deposited on Gd2O3 than for Fe on glass, both at a low frequency of 0.1 Hz for tunnel magnetoresistance and at higher frequencies of 1–105 Hz for tunnel magnetoimpedance. This results from the influence of f–d exchange interaction on electron tunneling between the iron islands. [ABSTRACT FROM AUTHOR]

Exploring the spin transport characteristics of magnetic tunnel junctions based on half-metallic Heusler holds significance, not only in unraveling the fundamental physics at play but also in advancing applications of spintronic devices. Here, density functional theory in conjunction with non-equilibrium Green's functions has been systematically employed to investigate two prominent Heusler alloys, Co2CrAl and CoFeCrAl, which are of direct interest to the candidates of magnetic tunnel junction. The electronic structures of two Hesler alloys reveal that both exhibit characteristics of half-metallic ferromagnets, featuring a substantial spin-down bandgap and achieving 100% spin polarization. The tunneling magnetoresistance ratios obtained for Co2CrAl/AlP/Co2CrAl and CoFeCrAl/AlP/CoFeCrAl magnetic tunnel junctions are determined to be 173% and 59%, respectively, with the former exhibiting superior device characteristics. Therefore, the Co2CrAl/AlP-based magnetic tunnel junction demonstrates ideal performance, providing new opportunities for two-dimensional spintronics. [ABSTRACT FROM AUTHOR]

There are not many high-precision, portable digital compass solutions available right now that can enhance combined navigation systems' overall functionality. Additionally, there is a dearth of writing about these products. This is why a tunnel magnetoresistance (TMR) sensor-based high-precision portable digital compass system is designed. First, the least-squares method is used to compensate for compass inaccuracy once the ellipsoid fitting method has corrected manufacturing and installation errors in the digital compass system. Second, the digital compass's direction angle data is utilized to offset the combined navigation system's mistake. The final objective is to create a high-performing portable TMR digital compass system that will enhance the accuracy and stability of the combined navigation system (abbreviated as CNS). According to the experimental results, the digital compass's azimuth accuracy was 4.1824° before error compensation and 0.4580° after it was applied. The combined navigation system's path is now more accurate overall and is closer to the reference route than it was before the digital compass was added. Furthermore, compared to the combined navigation route without the digital compass, the combined navigation route with the digital compass included is more stable while traveling through the tunnel. It is evident that the digital compass system's design can raise the integrated navigation system's accuracy and stability. The integrated navigation system's overall performance may be somewhat enhanced by this approach. [ABSTRACT FROM AUTHOR]

For the application of high-frequency current detection in power systems, such as very fast transient current, lightning current, partial discharge pulse current, etc., current sensors with a quick response are indispensable. Here, we propose a high-frequency magnetoelectric current sensor, which consists of a PZT piezoelectric ceramic and Metglas amorphous alloy. The proposed sensor is designed to work under d15 thickness-shear mode, with the resonant frequency around 1.029 MHz. Furthermore, the proposed sensor is fabricated as a high-frequency magnetoelectric current sensor. A comparative experiment is carried out between the tunnel magnetoresistance sensor and the magnetoelectric sensor, in the aspect of high-frequency current detection up to 3 MHz. Our experimental results demonstrate that the d15 thickness-shear mode magnetoelectric sensor has great potential for high-frequency current detection in smart grids. [ABSTRACT FROM AUTHOR]

Spintronics devices have been a research hotspot due to their rich theoretical and application value. The widebandgap semiconductor β-Ga2O3 has excellent application potential in spintronics due to the controllability of its electron behavior via ultraviolet light. This paper employs first-principles calculations and the Wenzel–Kramers–Brillouin (WKB) approximation to comprehensively investigate spin transport based on magnetic tunnel junctions (MTJs) comprising β-Ga2O3 nanosheets. The magnetic moment of the ferromagnetic layer in β-Ga2O3 MTJs is found to be positively correlated with tunnel magnetoresistance (TMR). Interestingly, layer-number parity-dependent oscillation of TMR in β-Ga2O3 MTJs is observed, which is explained by the non-equilibrium Green function and the WKB approximation. TMR reaches a maximum of 1077% at five layers, and bias-dependent stability is observed in the monolayer model under biases of 0–20 mV. This study not only expands the application potential of β-Ga2O3 and predicts its superiority in spintronics but also enriches the related condensed matter theory. [ABSTRACT FROM AUTHOR]

It is still a challenging problem to detect small defects for eddy current array probes, which requires the probes to possess excellent sensitivity, as well as high spatial resolution. This paper presents a novel high-resolution magnetic field imaging probe with two rows of tunneling magnetoresistance (TMR) array sensors. The bare die sensors are integrated on a printed circuit board by golden wire bonding technology. The two rows of sensors are placed staggered with each other. The data of the two arrays are merged into a matrix, in which way the image pixel pitch is increased to 0.25 mm. The probe employs a differential scheme to suppress the noise, so as to detect the weak signal of small defects. To highlight the weak defect indications, feature extraction and segmentation algorithms are developed. The experimental results confirm that the proposed method can inspect a small defect with dimensions 1 mm (length) × 0.1 mm (width) × 0.1 mm (depth) on a stainless-steel sample. [ABSTRACT FROM AUTHOR]

The online detection of small defects within thin steel holds significant importance in the field of steel manufacturing. This paper presents a high-precision flux leakage measurement system based on tunneling magnetoresistance sensors for detecting small defects in thin steel. We optimized the probe size and magnetic circuit design through numerical simulations and used the developed instrument to detect a standard mimicking through-hole defect plate, achieving a high signal-to-noise ratio and successfully detecting artificial defects small to a diameter of 50 μm. Additionally, we detected an actual internal defect in thin steel provided by the steel plant, meeting the required industrial accuracy. The data acquisition process in this study has been optimized to achieve real-time display and defect localization. The measurement scheme proposed in this paper has great potential for online monitoring of the thin steel production process. [ABSTRACT FROM AUTHOR]

A new nondestructive inspection method, the magnetic hammer test (MHT), which uses a compact and highly sensitive tunnel magnetoresistance (TMR) sensor, is proposed. This method complements the magnetic flux leakage method and eliminates the issues of the hammer test. It can therefore detect weak magnetic fields generated by the natural vibration of a pipe with a high signal-to-noise ratio. In this study, several steel pipes with different wall thicknesses were measured using a TMR sensor to demonstrate the superiority of MHT. The results of the measurement show that wall thickness can be evaluated with the accuracy of several tens of microns from the change in the natural vibration frequency of the specimen pipe. The pipes were also inspected underwater using a waterproofed TMR sensor, which demonstrated an accuracy of less than 100 μm. The validity of these results was by simulating the shielding of magnetic fields and vibration of the pipes with the finite element method (FEM) analysis. The proposed noncontact, fast, and accurate method for thickness testing of long-distance pipes will contribute to unmanned, manpower-saving nondestructive testing (NDT) in the future. [ABSTRACT FROM AUTHOR]

Purpose: Gesture recognition plays an important role in many fields such as human–computer interaction, medical rehabilitation, virtual and augmented reality. Gesture recognition using wearable devices is a common and effective recognition method. This study aims to combine the inverse magnetostrictive effect and tunneling magnetoresistance effect and proposes a novel wearable sensing glove applied in the field of gesture recognition. Design/methodology/approach: A magnetostrictive sensing glove with function of gesture recognition is proposed based on Fe-Ni alloy, tunneling magnetoresistive elements, Agilus30 base and square permanent magnets. The sensing glove consists of five sensing units to measure the bending angle of each finger joint. The optimal structure of the sensing units is determined through experimentation and simulation. The output voltage model of the sensing units is established, and the output characteristics of the sensing units are tested by the experimental platform. Fifteen gestures are selected for recognition, and the corresponding output voltages are collected to construct the data set and the data is processed using Back Propagation Neural Network. Findings: The sensing units can detect the change in the bending angle of finger joints from 0 to 105 degrees and a maximum error of 4.69% between the experimental and theoretical values. The average recognition accuracy of Back Propagation Neural Network is 97.53% for 15 gestures. Research limitations/implications: The sensing glove can only recognize static gestures at present, and further research is still needed to recognize dynamic gestures. Practical implications: A new approach to gesture recognition using wearable devices. Social implications: This study has a broad application prospect in the field of human–computer interaction. Originality/value: The sensing glove can collect voltage signals under different gestures to realize the recognition of different gestures with good repeatability, which has a broad application prospect in the field of human–computer interaction. [ABSTRACT FROM AUTHOR]

Current transformers (CTs) are the most widely used measurement instrumentation in power grids. Nevertheless, CT saturation gives rise to large measurement errors, which may have bad repercussions for the power system. In order to deal with the problem of CT saturation, a novel dual-core current transformer based on tunnel magnetoresistance sensor (DTCT) is proposed. Theoretical analyses, finite element method (FEM) simulations and accuracy tests are carried out to validate the practicability and effectiveness of the proposed DTCT. The simulation and experimental results manifest that the steady-state and transient characteristics of the DTCT are outstanding. [ABSTRACT FROM AUTHOR]

To mitigate the impact of low-frequency noise from the tunnel magnetoresistance (TMR) current sensor and ambient stray magnetic fields on weak current detection accuracy, we propose a high-resolution modulation-demodulation test method. This method modulates and demodulates the measurement signal, shifting low-frequency noise to the high-frequency band for effective filtering, thereby isolating the target signal from the noise. In this study, we developed a Simulink model for the TMR current sensor modulation-demodulation test method. Practical time-domain and frequency-domain tests of the developed high-resolution modulation-demodulation method revealed that the TMR current sensor exhibits a nonlinearity as low as 0.045%, an enhanced signal-to-noise ratio (SNR) of 77 dB, and a heightened resolution of 100 nA. The findings indicate that this modulation-demodulation test method effectively reduces the impact of low-frequency noise on TMR current sensors and can be extended to other types of resistive devices. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature coefficient of the tunnel magnetoresistance. The tunnel magnetoresistance of nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics was modeled, yielding values suitable for magnetoresistive sensor applications. Such structures possess a narrow peak of magnetic flux sensibility located at about 80 mT. For magnetic flux measurement, single-domain granules with superparamagnetic behavior should be applied. The predicted TMR magnetic flux sensitivities for granules with superparamagnetic behavior amount to about 7.7% T−1 and 1.5% T−1 for granule sizes of 3 nm and 5 nm, respectively. A drawback of the tunnel magnetoresistance of such nanogranular core-shell ceramics is the unacceptably large value of the temperature coefficient. Acceptable values, lower than 2% K−1, are obtained only at low temperatures (less than 100 K) or large magnetic flux densities (exceeding 6 T). Therefore, a Wheatstone bridge configuration should be adopted for magnetoresistive sensor design to compensate for the effect of temperature. [ABSTRACT FROM AUTHOR]

In this work, we demonstrate the preparation of easy-to-fabricate nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics and examine their properties, including tunnel magnetoresistance, magnetic field sensitivity, and temperature coefficient of the tunnel magnetoresistance. The tunnel magnetoresistance of nanogranular strontium ferromolybdate/strontium molybdate core-shell ceramics was modeled, yielding values suitable for magnetoresistive sensor applications. Such structures possess a narrow peak of magnetic flux sensibility located at about 80 mT. For magnetic flux measurement, single-domain granules with superparamagnetic behavior should be applied. The predicted TMR magnetic flux sensitivities for granules with superparamagnetic behavior amount to about 7.7% T−1 and 1.5% T−1 for granule sizes of 3 nm and 5 nm, respectively. A drawback of the tunnel magnetoresistance of such nanogranular core-shell ceramics is the unacceptably large value of the temperature coefficient. Acceptable values, lower than 2% K−1, are obtained only at low temperatures (less than 100 K) or large magnetic flux densities (exceeding 6 T). Therefore, a Wheatstone bridge configuration should be adopted for magnetoresistive sensor design to compensate for the effect of temperature.

In technology and industrial production, many applications require wide-bandwidth current measurements. In this paper, a signal fusion scheme for a current sensor comprising tunneling magnetoresistance and a current transformer is proposed, achieving a flat frequency response in the DC to MHz range. The measurement principles in different cases of the scheme are introduced, and the total transfer function of the entire scheme is derived by analyzing each section separately. Furthermore, the feasibility and selected parameters of the scheme are verified through a systematic simulation utilizing the MATLAB software. Based on the proposed scheme, a group of principal prototypes are built to experimentally evaluate the bandwidth, amplitude and phase flatness, accuracy, sensitivity, and impulse response. The relative amplitude variation in the passband of the fusion sensor is less than 4%, and the estimated bandwidth of the fusion sensor is close to 17 MHz. The accuracy is better than 0.6%, even when measuring the current at 1 MHz, and the relative standard deviation is 5% when measuring the impulse signal. The sensors developed using this scheme, with a low financial cost, have advantages in many wide-bandwidth current measuring scenarios.

A highly lattice-matched all-Heusler-alloy magnetic tunnel junction (MTJ) is proposed by associating half metallic CoFeTiSi electrode and non-magnetic semiconductor Fe2TiSi barrier. Based on the non-equilibrium Green's function combined with first-principles calculations, spin transport mechanism is studied by analyzing the transmission coefficient, local density of states, and scattering states. The calculated equilibrium tunnel magnetoresistance (TMR) ratio in CoFeTiSi/Fe2TiSi/CoFeTiSi reaches up to about 3.30 × 108%, which is much higher than in CoFeTiSi/MgO/CoFeTiSi. The calculated scattering states reveal that CoFeTiSi/Fe2TiSi/CoFeTiSi MTJ possesses two transport channels, and the contribution of channel I to the total transport is about 80%, which plays a dominate role. The analyses on non-equilibrium spin transport properties reveal that CoFeTiSi/MgO/CoFeTiSi MTJ can output a high intensity transport current with complete spin polarization, and it can output a stable and highly efficient signal. The TMR ratio possesses an extremely large value of about 2.4 × 108% and even the bias voltage increases to 0.2 V, exhibiting a robust current-driven stability. [ABSTRACT FROM AUTHOR]