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Semiconductor quantum dots, as promising solid-state platform, have exhibited deterministic photon pair generation with high polarization entanglement f\textcompwordmark idelity for quantum information applications. However, due to temporal correlation from inherently cascaded emission, photon indistinguishability is limited, which restricts their potential scalability to multi-photon experiments. Here, by utilizing quantum interferences to decouple polarization entanglement from temporal correlation, we improve multi-photon entanglement f\textcompwordmark idelity from $(58.7\pm 2.2)\%$ to $(75.5\pm 2.0)\%$. Our work paves the way to realize scalable and high-quality multi-photon states from quantum dots.

Quantum error correction is a critical technique for transitioning from noisy intermediate-scale quantum (NISQ) devices to fully fledged quantum computers. The surface code, which has a high threshold error rate, is the leading quantum error correction code for two-dimensional grid architecture. So far, the repeated error correction capability of the surface code has not been realized experimentally. Here, we experimentally implement an error-correcting surface code, the distance-3 surface code which consists of 17 qubits, on the \textit{Zuchongzhi} 2.1 superconducting quantum processor. By executing several consecutive error correction cycles, the logical error can be significantly reduced after applying corrections, achieving the repeated error correction of surface code for the first time. This experiment represents a fully functional instance of an error-correcting surface code, providing a key step on the path towards scalable fault-tolerant quantum computing.

In the quest to realize a scalable quantum network, semiconductor quantum dots (QDs) offer distinct advantages including high single-photon efficiency and indistinguishability, high repetition rate (tens of GHz with Purcell enhancement), interconnectivity with spin qubits, and a scalable on-chip platform. However, in the past two decades, the visibility of quantum interference between independent QDs rarely went beyond the classical limit of 50$\%$ and the distances were limited from a few meters to kilometers. Here, we report quantum interference between two single photons from independent QDs separated by 302 km optical fiber. The single photons are generated from resonantly driven single QDs deterministically coupled to microcavities. Quantum frequency conversions are used to eliminate the QD inhomogeneity and shift the emission wavelength to the telecommunication band. The observed interference visibility is 0.67$\pm$0.02 (0.93$\pm$0.04) without (with) temporal filtering. Feasible improvements can further extend the distance to 600 km. Our work represents a key step to long-distance solid-state quantum networks., 14 pages, 5 figures

Scaling up to a large number of qubits with high-precision control is essential in the demonstrations of quantum computational advantage to exponentially outpace the classical hardware and algorithmic improvements. Here, we develop a two-dimensional programmable superconducting quantum processor, Zuchongzhi, which is composed of 66 functional qubits in a tunable coupling architecture. To characterize the performance of the whole system, we perform random quantum circuits sampling for benchmarking, up to a system size of 56 qubits and 20 cycles. The computational cost of the classical simulation of this task is estimated to be 2-3 orders of magnitude higher than the previous work on 53-qubit Sycamore processor [Nature 574, 505 (2019)NATUAS0028-083610.1038/s41586-019-1666-5. We estimate that the sampling task finished by Zuchongzhi in about 1.2 h will take the most powerful supercomputer at least 8 yr. Our work establishes an unambiguous quantum computational advantage that is infeasible for classical computation in a reasonable amount of time. The high-precision and programmable quantum computing platform opens a new door to explore novel many-body phenomena and implement complex quantum algorithms.

An optimal single-photon source should deterministically deliver one and only one photon at a time, with no trade-off between the source's efficiency and the photon indistinguishability. However, all reported solid-state sources of indistinguishable single photons had to rely on polarization filtering which reduced the efficiency by 50%, which fundamentally limited the scaling of photonic quantum technologies. Here, we overcome this final long-standing challenge by coherently driving quantum dots deterministically coupled to polarization-selective Purcell microcavities--two examples are narrowband, elliptical micropillars and broadband, elliptical Bragg gratings. A polarization-orthogonal excitation-collection scheme is designed to minimize the polarization-filtering loss under resonant excitation. We demonstrate a polarized single-photon efficiency of 0.60+/-0.02 (0.56+/-0.02), a single-photon purity of 0.975+/-0.005 (0.991+/-0.003), and an indistinguishability of 0.975+/-0.006 (0.951+/-0.005) for the micropillar (Bragg grating) device. Our work provides promising solutions for truly optimal single-photon sources combining near-unity indistinguishability and near-unity system efficiency simultaneously., 28 pages, 16 figures. partial overlap with arXiv:1809.10992 which was unpublished

An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two-photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bullseye cavity with broadband high Purcell factor up to 11.3, we generate entangled photon pairs with a state fidelity of 0.90(1), pair generation rate of 0.59(1), pair extraction efficiency of 0.62(6), and photon indistinguishability of 0.90(1) simultaneously. Our work will open up many applications in high-efficiency multi-photon experiments and solid-state quantum repeaters., 7 pages, 7 figures, PRL to appear

In this report, we demonstrate for the first time, a platform to generate polarization-entangled photons, based on highly symmetric pyramidal quantum dots, achieving both site-controlled and electrically-injected capabilities at the same time. Combining with time gating techniques, our triggered light sources were proven for the first time to violate Bell's inequalities, an even more stringent examination for applications to future quantum information technologies.

In this work we present the modeling of Metal Organic Vapour-Phase Epitaxy (MOVPE) of InGaAs nanostructures in non-planar V-grooves and pyramidal recesses. Our well-established growth model has been first employed to find a set of optimized kinetic parameters for InGaAs epitaxy by fitting the morphological and compositional evolution during the growth of In 0.12 Ga 0.88 As V-groove quantum wires. These parameters allowed also reproducing the growth of In 0.25 Ga 0.75 As nanostructures formed in pyramidal site-controlled quantum dot systems. Finally, the temperature dependence of the structures resulting from our simulation has been compared to the optical properties previously reported in our studies.

An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 μm in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at - 10 V gate bias.

This study explores the growth and effects of a ten-period InAs∕GaAs quantum-dot infrared photodetector (QDIP). With a uniform quantum-dot (QD) size distribution and a QD density of 2.8×1010cm−2, this 10K photoluminescence spectrum shows a peak energy at 1.07eV and a narrow full width at half maximum of 31.7meV. The QDIP exhibits an asymmetric response under different voltage polarities and a high responsivity of 1.7A∕W at −1.1V. Another noticeable observation in the spectral response of the device is the 6μm peak detection wavelength with a high spectral broadening Δλ∕λ of 0.67. By analyses of the photoluminescence excitation spectrum and the temperature dependence of spectral response, the wide spectral response of the QDIP is attributed to the summation of transitions between QD excited states and the wetting layer states, instead of transitions between QD ground state and higher excited states.

Ten-period InAs-GaAs quantum-dot (QD) infrared photodetectors grown under different In adatom supply procedures are investigated. Two In adatom supply procedures of In shutter 1) always opened and 2) periodically opened/closed are adopted in this letter. Larger QD sizes in both height and diameter and more uniform size distribution are observed for samples grown under an In shutter periodically opened/closed condition. The device with QDs grown under the In shutter always opened condition has revealed shorter detection wavelengths and enhanced normal incident absorption. The phenomenon shows that beside the increase of energy difference between confinement states, smaller QD sizes would also enhance the normal incident absorption predicted for the theoretically zero-dimensional QD structures.

An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the electrical terminals of the device. Without exposing the channel region to the atmosphere, the device has exhibited standard transistor current-voltage characteristics in the 0-5 V range at room temperature, which may be advantageous for the future high-speed application of the device.

Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).

In this article, the authors investigate the influences of different InAs coverages on the photoluminescence excitation (PLE) spectra and spectral responses of InAs/GaAs quantum-dot infrared photodetectors (QDIPs). An increase in InAs coverage would lead to an increase in energy separation between heavy-hole state and light-hole state in the wetting layer (WL) region in the QD PLE spectra. The results suggest that most of the strain resulted from the InAs/GaAs lattice mismatch may be accumulated in the WL instead of the QD region. Also observed are the similar energy separations of energy levels responsible for the intraband absorption in the PLE spectra of the QDIPs such that similar detection wavelengths are observed for the devices.

In this article, we report the growth of InAs∕GaAs quantum dots (QDs) grown under different As4-supply procedures. The growth of the investigated samples carried out by the three procedures of As shutter always opened, As shutter initially opened, and As shutter initially closed. The samples grown by the former two approaches show a uniform QD distribution and the multiple-peak luminescence, which correspond to ground-state, first-excited-state, and second-excited-state luminescence, while that grown by the latter only shows large InAs islands. The results suggest that the As-stabilized condition at the initial stage of QD growth is very critical for the high-quality QD formation.