Search

Fourfold anisotropic magnetoresistance (AMR) have been widely observed in quantum materials, but the underlying mechanisms remain poorly understood. Here we find, in a variety of three-dimensional Dirac materials that can be unifiedly described by the massive Dirac equation, the intrinsic orbital magnetic moment of electrons vary synchronously with the magnetic field and give rise to a {\pi} periodic correction to its velocity, further leading to unusual fourfold AMR, dubbed intrinsic orbital fourfold AMR. Our theory not only explains the observation of fourfold AMR in bismuth but also uncovers the nature of the dominant fourfold AMR in thin films of antiferromagnetic topological insulator MnBi2Te4, which arises from the near cancellation of the twofold AMR from the surface states and bulk states due to distinct spin-momentum lockings. Our work provides a new mechanism for creation and manipulation of intrinsic fourfold AMR in both conventional conductors and various topological insulators., Comment: 6 pages and 2 figures. Comments are welcome

Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration between the electric field, magnetization and the Hall current. Here, based on the symmetry analysis, we find an unconventional AHE induced by the in-plane magnetic field (IPAHE) via spin-canting effect in $\mathcal{PT}$ symmetric antiferromagnetic (AFM) systems, featuring a linear dependence of magnetic field and 2$\pi$ angle periodicity with a comparable magnitude as conventional AHE. We demonstrate the key findings in the known AFM Dirac semimetal CuMnAs and a new kind of AFM heterodimensional VS$_2$-VS superlattice with a nodal-line Fermi surface and also briefly discuss the experimental detection. Our work provides an efficient pathway to search and/or design realistic materials for novel IPAHE that could greatly facilitate their application in AFM spintronic devices., Comment: 6 pages, 4 figures, 1 table