143 results on '"Tsubouchi, Nobuteru"'
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2. Microstructures of dome-shaped hillocks formed on B doped CVD homoepitaxial diamond films
3. Growth and characterization of freestanding p+ diamond (100) substrates prepared by hot-filament chemical vapor deposition
4. Microstructures of threading dislocation bundles included in CVD homoepitaxial diamond plates
5. Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond
6. Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment
7. Recent progresses in R&D of methods to fabricate inch-sized diamond wafers
8. List of Contributors
9. Structure, radiation damage and annealing effects in diamond implanted with a high fluence of a few MeV carbons
10. Uniform growth and repeatable fabrication of inch-sized wafers of a single-crystal diamond
11. Evaluation of Local Stress Distributions and Dislocations Around Petal Patterns Observed in CVD Single Crystal Diamond Plates.
12. Change of structural and electrical properties of diamond with high-dose ion implantation at elevated temperatures: Dependences on donor/acceptor impurity species
13. Freestanding single crystal chemical vapor deposited diamond films produced using a lift-off method: Response to α-particles from 241Am and crystallinity
14. Growth and evaluation of self-standing CVD diamond single crystals on off-axis (001) surface of HP/HT type IIa substrates
15. Lattice structure of a freestanding nitrogen doped large single crystal diamond plate fabricated using the lift-off process: X-ray diffraction studies
16. Characterization of a sandwich-type large CVD single crystal diamond particle detector fabricated using a lift-off method
17. Fabrication and fundamental characterizations of tiled clones of single-crystal diamond with 1-inch size
18. Developments of elemental technologies to produce inch-size single-crystal diamond wafers
19. Crystallinity of freestanding large undoped single crystal diamond plates produced using pre-ion-implanted substrates and lift-off processes
20. Electrical properties of a B doped layer in diamond formed by hot B implantation and high-temperature annealing
21. Characterization of crystallinity of a large self-standing homoepitaxial diamond film
22. Formation of a heavily B doped diamond layer using an ion implantation technique
23. p-type doping by B ion implantation into diamond at elevated temperatures
24. Conversions of a stacking fault to threading dislocations in homoepitaxial diamond growth studied by transmission electron microscopy
25. Effect of laser irradiation during B ion implantation into diamond
26. Nitrogen diffusion in stainless steel during irradiation with mass-selected low-energy N + ion beams
27. Ni silicide layer formation using low-energy ion beams
28. 3C-SiC thin epilayer formation at low temperature using ion beams
29. Simultaneous mass-analyzed positive and negative low-energy ion beam deposition apparatus
30. Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination
31. Nano-indentation testing for plasma-based ion-implanted surface of plastics
32. Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries
33. Large reduction of threading dislocations in diamond by hot-filament chemical vapor deposition accompanying W incorporations
34. Low-temperature epitaxial Ni silicidation: The role of hyperthermal species.
35. High Impact Resistance Plastic Hard Disk Using Plasma-Based Ion-Implantation
36. A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process
37. Evaluation method for grown-in dislocations in CVD single crystal diamond using plasma surface treatment
38. Development of single-crystalline diamond wafers
39. Large Single Crystal Diamond Plates Produced by Microwave Plasma CVD
40. Enhancement of Dopant Activation in B-Implanted Diamond by High-Temperature Annealing
41. Diamond Doped by Hot Ion Implantation
42. Low-resistance p+ layer formation into diamond using heavily B ion implantation
43. Nitrogen diffusion in stainless steel during irradiation with mass-selected low-energy N+ ion beams
44. Ion-Beam 3C–SiC Heteroepitaxy on Si
45. Reaction Mechanism of the Carbonization Process by Low-Energy Ion Subplantation
46. Epitaxial Growth of Pure 28Si Thin Films Using Isotopically Purified Ion Beams
47. Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C–SiC heteroepitaxial growth on Si (100)
48. Linewidth Study of Electric Dipole induced Spin Resonance in Uniaxially Stressed n-InSb for Far-Infrared Region: Theoretical
49. Initial growth of heteroepitaxial 3C–SiC on Si using energetic species
50. Linewidth Study of Electric Dipole Induced Spin Resonance in Uniaxially Stressed n-InSb in Far Infrared Regions: Experimental
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