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Alkali halide postdeposition treatments (PDTs) have become a key tool to maximize efficiency in Cu(InxGa1−x)Se2 (CIGS) photovoltaics. RbF PDTs have emerged as an alternative to the more common Na‐ and K‐based techniques. This study utilizes temperature‐dependent current–voltage (JVT) measurements to study a unique RbF PDT performed in a S atmosphere. The samples are measured before and after 6 months in a desiccator to study device stability. Both samples contain Na and K which diffuse from the soda–lime glass substrate. A reference sample and a RbF + S PDT sample both show the development of a rear contact barrier after aging. The contact barrier is higher for the RbF + S PDT sample, leading to decreased current in forward bias. Series resistance is also higher in the RbF + S PDT device which leads to lower fill factor. However, after aging the reference sample has a larger decrease in open‐circuit voltage (VOC). Ideality factor measurements suggest Shockley–Read–Hall recombination dominates both samples. VOC versus temperature and a temperature‐dependent activation energy model are used to calculate diode activation energies for each sample condition. Both techniques produce similar values that indicate recombination primarily occurs within the bulk absorber. [ABSTRACT FROM AUTHOR]

Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se2. Herein, voltage loss analysis of Cu(In,Ga)Se2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells. [ABSTRACT FROM AUTHOR]

Up to now, what we know about the impact of alkali post‐deposition treatment (PDT) on Cu(In,Ga)Se2 (CIGSe) absorber thin films is largely based on treatments performed in selenium atmosphere and only few studies have addressed the critical role of the chalcogen atmosphere during the PDT. The present study deals with an innovative process of alkali fluoride PDT under elemental sulfur atmosphere on co‐evaporated Cu(In,Ga)Se2 absorbers. With the aim to understand the effects of different the incorporated alkali element incorporated during the PDT, we investigate four different PDTs: CsF, NaF/RbF, RbF, and In + RbF—all under sulfur atmosphere. The treated absorbers are characterized by scanning electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. Our results show that for CIGSe compositions close to stoichiometry, forming a slightly Cu‐poor CIGSe at the surface during the PDT is beneficial. Cu(In,Ga)Se2/RbF(S) and Cu(In,Ga)Se2/In + RbF(S) exhibit the higher photoluminescence response probably due to decreased surface recombination. The quasi‐Fermi‐level splitting is in good agreement with the observed Voc difference between the treated and reference samples. The electronic properties of the Cu(In,Ga)Se2/In + RbF(S)‐based solar cells show a significantly improved performance with high Voc and FF. [ABSTRACT FROM AUTHOR]