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3. Mechanism responsible for initiating room temperature ferromagnetism and spin polarized current in diluted magnetic oxides

7. Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel

8. Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing.

9. First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

10. Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors

14. Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V)

21. Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films

23. Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics

35. The thermal stability improvement of spin-orbit-torque (SOT) devices with a thin PtMn insertion

42. An Effective Charge Neutralization Enabled by Graphene Overlayer in Ambient Pressure XPS Measurements of Insulators.

49. Biological sensing using anomalous hall effect devices.

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