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Both CuI and CuI:Zn semiconductor thin films, along with MSM-structured UV photodetectors, were prepared on flexible mica substrates at low temperature (150 °C) by a wet chemical method. The two CuI-based films exhibited a polycrystalline phase with an optical bandgap energy close to 3.0 eV. Hall effect measurements indicated that the CuI thin film sample had p-type conductivity, while the CuI:Zn thin film sample exhibited n-type conductivity, with the latter showing a higher carrier mobility of 14.78 cm2/Vs compared to 7.67 cm2/Vs for the former. The I-V curves of both types of photodetectors showed asymmetric rectification characteristics with rectification ratios at ±3 V of 5.23 and 14.3 for the CuI and CuI:Zn devices, respectively. Flexible CuI:Zn devices exhibited significantly better sensitivity, responsivity, and specific detectivity than CuI devices both before and after static bending tests. It was found that, while the optoelectronic performance of flexible CuI-based photodetectors degraded under tensile stress during static bending tests, they still exhibited good reproducibility and repeatability in their photoresponses. [ABSTRACT FROM AUTHOR]

The binary heterostructured semiconducting visible light photocatalyst of the iron-doped graphitic carbon nitride/bismuth molybdate (Fe-g-C3N4/Bi2MoO6) composite was prepared by coupling with Fe-doped g-C3N4 and Bi2MoO6 particles. In the present study, a comparison of structural characteristics, optical properties, and photocatalytic degradation efficiency and activity between Fe-doped g-C3N4 particles, Bi2MoO6 particles, and Fe-g-C3N4/Bi2MoO6 composite was investigated. The results of X-ray diffraction (XRD) examination indicate that the hydrothermal Bi2MoO6 particles have a single orthorhombic phase and Fourier transform infrared (FTIR) spectroscopy analysis confirms the formation of Fe-doped g-C3N4. The optical bandgaps of the Fe-doped g-C3N4 and Bi2MoO6 particles are 2.74 and 2.73 eV, respectively, as estimated from the Taut plots obtained from UV-Vis diffuse reflectance spectroscopy (DRS) spectra. This characteristic indicates that the two semiconductor materials are suitable for absorbing visible light. The transmission electron microscopy (TEM) micrograph reveals the formation of the heterojunction Fe-g-C3N4/Bi2MoO6 composite. The results of photocatalytic degradation revealed that the developed Fe-g-C3N4/Bi2MoO6 composite photocatalyst exhibited significantly better photodegradation performance than the other two single semiconductor photocatalysts. This property can be attributed to the heterostructured nanostructure, which could effectively prevent the recombination of photogenerated carriers (electron–hole pairs) and enhance photocatalytic activity. Furthermore, cycling test showed that the Fe-g-C3N4/Bi2MoO6 heterostructured photocatalyst exhibited good reproducibility and stability for organic dye photodegradation. [ABSTRACT FROM AUTHOR]

Bismuth vanadate (BiVO4), W-doped BiVO4 (BiVO4:W), and Mo-doped BiVO4 (BiVO4:Mo) nanoparticles were synthesized at pH = 4 using a green hydrothermal method. The effects of 2 at% W or Mo doping on the microstructural and optical characteristics of as-prepared BiVO4 nanoparticles and the effect of combining particle morphology modification and impurity dopant incorporation on the visible-light-derived photocatalytic degradation of dilute Rhodamine B (RhB) solution are studied. XRD examination revealed that these obtained BiVO4-based nanoparticles had a highly crystalline and single monoclinic phase. SEM and TEM observations showed that impurity doping could modify the surface morphology, change the particle shape, and reduce the particle diameter to enlarge their specific surface area, increasing the reactive sites of the photocatalytic process. XPS and FL measurements indicated that W- and Mo-doped nanoparticles possessed higher concentrations of oxygen vacancies, which could promote the n-type semiconductor property. It was found that the BiVO4:W and BiVO4:Mo powder samples exhibited better photocatalytic activity for efficient RhB removal than that shown by pristine BiVO4 powder samples under visible light illumination. That feature can be ascribed to the larger surface area and improved concentration of photogenerated charge carriers of the former. [ABSTRACT FROM AUTHOR]