37 results on '"Tsao, Yu‐Ching"'
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2. Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection
3. Vertical Electric Field-Induced Abnormal Capacitance–Voltage Electrical Characteristics in a-InGaZnO TFTs
4. An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors
5. Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors
6. On the Optimization of Performance and Reliability in a-InGaZnO Thin-Film Transistors by Versatile Light Shielding Design
7. A Novel Ultrawideband Absorptive Common-Mode Filter Design Using a Miniaturized and Resistive Defected Ground Structure
8. Dynamic switching-induced back-carrier-injection in a-InGaZnO thin film transistors
9. Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors
10. Modified Conductance Method for The Extraction of Interface Traps in GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors
11. Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors
12. Formation of Hump Effect Due to Top-Gate Bias Stress in Organic Thin-Film Transistors
13. Abnormal ${C}$ –${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs
14. Analysis of Negative Bias Temperature Instability Degradation in p-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistors of Different Grain Sizes
15. Abnormal Back Channel Leakage Under Large Drain Voltage in Short Channel Organic Thin-Film Transistors
16. Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment
17. Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors
18. A Novel Heat Dissipation Structure for Inhibiting Hydrogen Diffusion in Top-Gate a-InGaZnO TFTs
19. Improving Reliability of High-Performance Ultraviolet Sensor in a-InGaZnO Thin-Film Transistors
20. Abnormal Unsaturated Output Characteristics In a-InGaZnO TFTs With Light Shielding Layer
21. Hydrogen as a Cause of Abnormal Subchannel Formation Under Positive Bias Temperature Stress in a-InGaZnO Thin-Film Transistors
22. Reliability Test Integrating Electrical and Mechanical Stress at High Temperature for a-InGaZnO Thin Film Transistors
23. Enhancing Repetitive Uniaxial Mechanical Bending Endurance at ${R} = 2$ mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors
24. A Dual‐Gate InGaZnO 4 ‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection
25. Effect of Different a-InGaZnO TFTs' Channel Thickness upon Self-Heating Stress
26. Effects of Ultraviolet Light on the Dual-Sweep$I$– $V$Curve of a-InGaZnO4 Thin-Film Transistor
27. Contradiction Behaviors between I-V and C-V Curves after Self-Heating Stress in a-IGZO TFT with Triple-Stacked Channel Layers
28. Enhancing Repetitive Uniaxial Mechanical Bending Endurance at R=2mm Using an Organic Trench Structure in Foldable Low Temperature Poly-Si Thin-Film Transistors
29. Effect of a-InGaZnO TFT Channel Thickness under Self-Heating Stress
30. Dynamic switching-induced back-carrier-injection in a-InGaZnO thin film transistors.
31. Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations
32. Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
33. Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide
34. Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
35. Abnormal hump in capacitance–voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors
36. Effects of Ultraviolet Light on the Dual-Sweep $I$ – $V$ Curve of a-InGaZnO4 Thin-Film Transistor.
37. A Dual‐Gate InGaZnO4‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection.
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